Coherent Stokes and anti-Stokes Raman spectra of the ν1 (A1) and ν2 (E) bands of SF6 and UF6

Coherent Stokes and anti-Stokes Raman scattering are used to study the ν₁ and ν₂ spectral band profiles of UF₆ and SF₆. Most of the observed SF₆ “hot” bands are assigned, leading to evaluations of the anharmonicity constants X_ij: X₁₂ = ?(2.80 ± 0.30) cm^?1, X₁₄ = ?(1.00 ± 0.15) cm^?1, X₁₅ = ?(1.00 ± 0.15) cm^?1. For UF₆, a tentative assignment of the “hot” bands is made: X₁₂ = ?(1.80 ± 0.30) cm^?1, X₁₃ = ?(1.60 ± 0.30) cm^?1, X₁₄ = ?(0.20 ± 0.10) cm^?1, X₁₅ = ?(0.25 ± 0.10) cm^?1, and X₁₆ = ?(0.10 ± 0.05) cm^?1. Parameters such as the vibration-rotation coupling constants are determined. For SF₆: α = (7 ± 2) × 10^?5 cm^?1 for the ν₂ band and α = ?(1.02 ± 0.01) 10^?4 cm^?1 for the ν₁ band. The calculated spectral profiles of the coherent Stokes or anti-Stokes spectra, which are in good agreement with experimental results, give values for the resonant and nonresonant parts of the susceptibility in both molecules. They also show, in some cases, the influence of neighboring combination bands.     

Hartree calculations for n-inversion layers on stressed silicon surfaces

The energy splittings and occupation number densities in n-type inversion layers are estimated in a Hartree calculation with a parametrized exponential potential. Good agreement with experiment is obtained for low temperatures and for electron concentrations 1×10¹²cm^?2 ?N_s?1×10¹³cm^?2. On the basis of these calculations the influence of uniaxial stress is considered.For a 001-stress along a (100)-surface one finds that (i) the stress induced subband splitting is a function of the electron density, and (ii) the splitting E₁-E₀ within a subband system depends on the applied stress.     

Absolute intensity measurements of the CO2 bands 401III←000 and 411III←010

The absolute intensities of the transitions 401_III←000 and 411_III←010 of CO₂ have been measured from spectra obtained under high resolution. Both the vibration-rotation line intensities and the integrated band intensities are reported. The rotationless transition moment of 401_III←000 is deduced and a vibration-rotation interaction factor F(m) = 1+(4.92×10^?4)m+(4.4×10^?7)m² is determined. The values obtained are: S_Band(401_III←000) = (25.54±0.22)×10^?5 cm^?2atm_{(293 K)}^?1, |R₀₀₀^401_III| = (1.87±0.02)×10^?4D, and S_Band(411_III←010) = (1.83±0.13)×10^?5 cm^?2atm_{(293 K)}^?1.     

Elastic constants of solid krypton at T = 77 K determined by inelastic neutron scattering

Long-wavelength acoustic phonons have been studied for each of the [ζ00]T, [ζ00]L, [ζζ0]L and [ζζ0]T₁ branches in solid Kr at T = 77 K by means of inelastic neutron scattering utilizing ‘cold neutrons’ as they are available in the long-wave length tail of the pile spectrum. The raw data have been corrected for resolution effects taking into account the curvature of the dispersion surface and variation of mode eigenvectors. It has turned out, that this yields appreciable shifts of the raw data. The results of our experiment give c₁₁ = 4·25 ± 0·10, c₄₄ = 2·04 ± 0·03, c₁₂ = 2·82 ± 0·12 and a value for B = (c₁₁ + 2c₁₂)/3 = 3·30 ± 0·09 × 10¹⁰ dyne/cm². Available thermodynamic data for Kr gives a derived value for B^ad = 2·58 ± 0·06 × 10¹⁰ dyne/cm² indicating a large difference between zero sound and first sound in solid Kr at high temperatures.     

Parameters of the cathode spot upon field emission

This work is devoted to studying the parameters of the cathode spot of a vacuum arc. According to calculations under conditions of autoelectronic emission, the temperature of the cathode spot is T _n = (1–2.5) × 10³ K, the electric-field strength is E = (1–6) × 10⁷ V cm^?1, and the current density in the spot is j _n = (0.15–3) × 10⁷ A cm^?2. The values of the cathode-spot parameters for cathodes of different materials are obtained and the type of electron emission is determined.     

Calculation of band structure in (101)-biaxially strained Si

The structure model used for calculation was defined according to Vegard’s rule and Hooke’s law. Calculations were performed on the electronic structures of (101)-biaxially strained Si on relaxed Si_1−X Ge _X alloy with Ge fraction ranging from X = 0 to 0.4 in steps of 0.1 by CASTEP approach. It was found that [±100] and [00±1] valleys (δ₄) splitting from the [0±10] valley (Δ₂) constitute the conduction band (CB) edge, that valence band (VB) edge degeneracy is partially lifted and that the electron mass is unaltered under strain while the hole mass decreases in the [100] and [010] directions. In addition, the fitted dependences of CB splitting energy, VB splitting energy and indirect bandgap on X are all linear. Supported by the National Pre-research Foundation of China (Grant Nos. 51308040203 and 51408061105DZ0171)     

Astrophysical S factor for dd interaction at ultralow energies

Experimental results are presented that were obtained by measuring the astrophysical S factor for dd interaction at very low deuteron collision energies by using the liner-plasma technique. The experiment was performed at the high-current generator of the High-Current Electronics Institute (Tomsk, Russia). The values found for the S factor at the deuteron collision energies of 1.80, 2.06, and 2.27 keV are S _dd=114±68, 64±30, and 53±16 keV b, respectively. The corresponding dd cross sections obtained as the product of the barrier factor and the measured astrophysical S factor are σ _dd ⁿ (E _col=1.80 keV)=(4.3±2.6)×10^?33cm², σ _dd ⁿ (E _col=2.06 keV)=(9.8±4.6)×10^?33cm², and σ _dd ⁿ (E _col=2.27 keV)=(2.1±0.6)×10^?32cm².     

Ethane spectrum between 1940 and 2152 cm−1: Ground state parameters

The absorption spectrum of ethane was recorded between 1940 and 2152 cm^?1 at a resolution of 0.025 cm^?1. Ground state parameters were determined from the principal band in this region, ν₉ + ν₁₂(E_u): B₀ = 0.6630353 cm^?1, D₀^J = 1.0406 × 10^?6 cm^?1, D₀^JK = 2.575 × 10^?6 cm^?1 (standard errors are 7, 8, and 13, respectively, in the last digits quoted). The quoted values are from the analyses of 269 ground state combination differences, the standard deviation of the least-squares analysis was 0.0032 cm^?1.     

Spin-spin interaction of Dy3+ ions in KY(WO4)2

The spin-spin interaction of Dy³⁺ ions in a KY(WO₄)₂ single crystal is investigated by electron paramagnetic resonance (EPR) spectroscopy at a temperature of 4.2 K and a frequency of 9.2 GHz. The EPR spectra of ion pairs located in different coordination shells are analyzed. It is revealed that the considerable contribution to the spin-spin interaction of the nearest neighbor ion pair nn is made not only by the magnetic dipole-dipole interaction but also by the isotropic exchange interaction with the parameter I _nn = (+601 ± 17) × 10^?4cm^?1. The exchange interaction in pairs of more widely spaced ions is substantially weaker: I _5n = (?38 ± 3) × 10^?4cm^?1 and I _9n = (+18 ± 4) × 10^?4cm^?1. For the other ion pairs, the magnetic dipole-dipole interaction dominates. It is found that the EPR spectra of single ions and ion pairs exhibit a superhyperfine structure associated with tungsten nuclei.     

The analysis of symmetric rotor Raman spectra: The pure rotational spectrum of 11BF3

The pure rotational Raman spectrum of ¹¹BF₃ has been photographed. Great care was taken in the analysis to consider all the unresolved components under each observed Raman line profile. If this is ignored, systematic errors result. The final set of molecular constants obtained was B₀ = 0.34502(±3 × 10^?5)cm^?1, D_J = 4.38(±0.10) × 10^?7cm^?1, and D_JK = ?9.1(±1.0) × 10^?7cm^?1.     

Spatial distribution of EAS radio emission at 32 MHz

The results of the reprocessing of the experimental data on radio emission from extensive air showers (EAS) earlier obtained at the EAS facility (Moscow State University) are reported. The maximum depth distribution of showers is found from analysis of the width of the spatial distribution of radio emission. The average maximum depth is X _max = 655 ± 8 g/cm² for the primary particle energy E ₀ ～ (3–4) × 10¹⁷ eV. The normalized field strength at E ₀ = 10¹⁷ eV is 3.2 ± 0.6 and 2.8 ± 0.4 μV/(m MHz) at distances of 50 and 100 m from the axis, respectively. The accuracy of E ₀ determination from the radio emission field strength at 50 m from the axis is about 20%.     

Influence of pressure on the relative population of the two lowest vibrational levels of the C <Superscript>3</Superscript> Π<Subscript>u</Subscript> state of nitrogen for electron beam excitation

Continuous and pulsed 12 keV electron beams were used to excite nitrogen within a gas cell at pressures ranging from 10 to 1400 hPa. The pressure dependence of the ratio of photon fluxes for emission from vibrational levels v'=0 and 1 of the C ³Π _u state has been studied. The results confirm the presence of a collisional excitation mechanism populating v'=0, 1 in addition to electron impact excitation. Rate constants of (1.27 ±0.04)×10^-11 cm³s^-1 [ v'=0] and (2.68 ±0.08)×10^-11 cm³s^-1 [ v'=1] were measured for C ³Π _u quenching by ground state nitrogen. For electron beam conditions relative excitation efficiencies of 1:0.59:0.22 for vibrational levels 0, 1 and 2 were calculated. The recorded flux ratios are compared with the predictions given by a vibrational relaxation model.     

Mixed conduction in Cr-doped GaAs

Hall-effect and magnetoresistance measurements have been carried out in GaAs : Cr as functions of magnetic field strength (B = 0–18kG) and temperature (T = 125–420°K). Independent solutions for the mobilities, μ_n and μ_p, and the carrier concentrations, n and p, are obtained from the basic mixed-conductivity equations. These quantities, as well as the intrinsic carrier concentration, n_i are then calculated as a function of temperature for one sample, and subsequent analysis yields the following values in the range T = 360–420°K: an acceptor (presumably Cr) energy E_A = 0.69±0.02eV (from the valence band); the bandgap energy E_g = E_g0 + αT, with E_go = 1.48±0.02eV, $\text{α ? 3.2 × 10}{}^{\mathrm{?4}}\text{eV}\text{°}\text{K}$; $\text{μ}{}_{\mathrm{n}}\text{= 2700± 100}\text{cm}{}^2\text{V}\text{sec}$, decreasing slightly with temperature; = 350± 50 $\text{cm}{}^2\text{V sec}$; and an acceptor-to-donor concentration ratio, itN_A/N_D?8. The electron mobility appears to be limited by neutral impurity scattering, with N_A ? 2 × 10¹⁶cm^?3. Several other samples were also investigated but as a function of temperature only (at B = 0). At room temperature both positive (p-type) and negative (n-type) Hall coefficients were observed.     

High resolution Raman spectroscopy of gases with laser sources. The rotational spectrum of cyanuric fluoride-C3N3F3

The pure rotational Raman spectrum of cyanuric fluoride vapor was photographed using a high resolution plane grating spectrograph. The spectrum was excited with the $\text{λ = 4880}\text{A}\text{?}$ radiation emitted by a single-mode argon-ion laser. Two sets of molecular constants were determined from the R and S branches. The preferred results are those determined from the S-branch data. These are: B₀ = 0.0655954 ± 14 × 10^?7 cm^?1, D_J = (2.52 ± 0.17) × 10^?9 cm^?1 and H_J = (?1.59 ± 0.59) × 10^?14 cm^?1, where the uncertainties are one standard deviation. Possible effects of line shifts due to unresolved K structure and the presence of hot bands on the accuracy of the values of the molecular constants are discussed. The B₀ value is compared to the rotation constant computed with the structural parameters determined with the electron diffraction technique; the agreement between these two rotation constants is only fair.     

Intensities and half-widths at different temperatures for the 201III←000 band of CO2 at 4854 cm−1

Measurements made at temperatures of 197, 233, and 294°K of the absolute intensities and self-broadening coefficients for the vibration-rotation lines of the 201_III←000 band of the ¹²C¹⁶O₂ molecule, are reported. From these measurements, values have been derived for the vibration-rotation interaction factor (F_VR), the purely vibrational transition moment (|R(O)|), and the intensity (S_Band). The results are: E_VR(m) = 1+(2.2±0.7)×10^?3m+(5.6±1.6)×10^×5m², |R(0)| = (2.064±0.017)×10^?3 debye, S_Band = 21,329±69 cm^?1km^?1atm^?1_STP. The results for the self-broadening coefficients are presented in the text.     

Line strengths,spin-splittings,and forbidden transitions in the (101) band of 14N16O2

Measurements of line strengths in the (101) and (111)-(010) bands of ¹⁴N¹⁶O₂ have been made at a resolution of 0.02 cm^?1 in the region 2863 to 2934 cm^?1. The strength data in the (101) band were analyzed to determine a vibrational band strength and coefficients of the F factor. Each subband for K_?1 ≤ 9 was analyzed separately and all the F-factor coefficients in terms of the rotational quantum number, N, were found to be too small to be of significance. However, F was found to be dependent on K_?1 and the experimentally determined subband strengths were least-squares fitted to the expression S_v⁰·F, where S_v⁰ = 68.3 cm^?2 atm^?1 at 296 K and F = 1 + (2.899 × 10^?3)K_?1 + (4.08 × 10^?3)K_?1² ? (2.34 × 10^?4)K_?1³. The integrated strengths for the (101) and (111)-(010) bands were found to be 70.9 ± 2.3 and 2.7 ± 0.3 cm^?2 atm^?1 at 296 K, respectively. Also included in this study are measurements of line center positions in the two bands and spin-splittings in the (101) band. Recent frequency measurements of lines with K_?1 ≤ 8 in the (101) band have been made at a resolution of 0.0033 cm^?1 by V. Dana and J. P. Maillard (J. Mol. Spectrosc.71, 1–4) (1978)) for the region above 2889 cm^?1 and our values are in excellent agreement with theirs. Separations of the split lines measured in this work (K_?1 ≤ 10) agree well with calculated values using expressions which include the η_aaaaK_?1⁴ term with η′_aaaa = ?1.70 ± 0.15 × 10^?4 cm^?1 as derived for the (101) state. Three forbidden (ΔN ≠ ΔJ, ΔK_?1 = 0) transitions in the (101) band were observed with their identifications based on the agreement between measured and calculated line positions and strengths.     

The average structure of 5.10-Dihydro-5.10-Diethylphenazinium-Iodide (E2P·I1.6): A new linear chain Polyiodide compound

Upon oxidation of 5.10-dihydro-5.10-diethylphenazine (E₂P) with iodine golden-green lustrous crystals of a compound with stoichiometry E₂P.I_1.6 were isolated. The compound crystallizes in the tetragonal space group D₄² with $\text{a = 12.321(2)}\text{A}\text{?}$ and $\text{c = 5.330(2)}\text{A}\text{?}$. The E₂P and I form interpenetrating incommensurate sublattices along c, with an iodine repeat distance of 9.7 Å. Static susceptibility measurements at room temperature give χ_g = + 0.994 × 10^?6g^?1 × cm³. This corresponds to one unpaired electron spin per two formular units. Single-crystal EPR indicates that the paramagnetism is associated with weakly interacting E₂P⁺ cation radicals. The 300K-d.c. conductivity of 3×10^?2Ω^?1cm^?1 and activation energy of 0.17±0.02eV for single crystals is consequently associated with the polyiodide chains, and not with the E₂P⁺ cation radicals.     

Remarks on the charged multiplicity of hadronic Z0(91) decays

The charged multiplicity distribution of hadronic decays of Z ⁰ from LEP and those of inclusive $e^{+}+e^{-}?ghtarrow h{?erline h} at E_{? cm}=14 {? to} 60 {? GeV}$ at E _cm = 14 to 61 GeV are analyzed using a Poisson-type distribution for photon statistics, due to Scully-Lamb. Its two parameters are expressed in terms of 〈n〉 and f ₂ = 〈n(n ? 1)〉 ? 〈n〉² of the data in order to perform no-free-parameter fits. It is found that f₂ behaves like $E_{? cm}^{a}$ with a = 2.01 ± 0.11, whereas C ₂ = 〈n ²〉/〈n〉² ～ E _cm with ΔC ₂/ΔE _cm = (1.81 ± 0.14)·10^?3.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Magneto-acoustic attenuation in AuSb2

Quantum oscillations in the ultrasonic attenuation in AuSb₂ were studied as a function of temperature, magnetic field and crystal orientation. The effective masses of the carriers associated with the F₅ and F₆ oscillations were measured in a (110) plane. For the F₅ oscillations, the Dingle temperature and apparent magnetic breakdown field appear to depend strongly upon orientation. For the F₆ oscillations, however, there were no signs of magnetic breakdown up to the highest magnetic fields available (70 kOe) and the Dingle temperature was roughly independent of orientation. From the acoustic velocities, the elastic constants were determined at 77 K: C₁₁ = (14·7 ± 0·9) × 10¹¹ dyne/cm², C₁₂ = (6·0 ± 0·9) × 10¹¹ dyne/cm², and C₄₄ = (2·59 ± 0·06) × 10¹¹ dyne/cm². These elastic constants give an adiabatic compressibility K_s = (1·13 ± 0·12) × 10^?12 cm²/dyne and a Debye temperature ?_D = (203 ± 15) K.