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1.
We report on the resonant excitation of electronic surface subbands at far-infrared energies. Distinct lines for transitions from the lowest-lying n = 0 subband to the n = 1 and 2 states are observed. The transition energies are compared to a subband calculation. Typical linewidths are of order 2 meV and indicate an intersubband relaxation rate which is ~ 110 of the scattering rate derived from the surface mobility. The 0→ 1 transition shows additional structure on the low energy side.  相似文献   

2.
Strong resonant enhancements of inelastic light scattering from the long wavelength inter-Landau level magnetoplasmon and the intra-Landau level spin wave excitations are seen for the fractional quantum Hall state at ν=1/3. The energies of the sharp peaks (FWHM 0.2 meV) in the profiles of resonant enhancement of inelastic light scattering intensities coincide with the energies of photoluminescence bands assigned to negatively charged exciton recombination. To interpret the observed enhancement profiles, we propose three-step light scattering mechanisms in which the intermediate resonant transitions are to states with charged excitonic excitations.  相似文献   

3.
We report on X-ray magnetic diffraction studies of the spin density wave antiferromagnetism formed in the conduction electron band of chromium. Non-resonant X-ray magnetic scattering was used to directly determine that chromium has zero orbital magnetisation. Furthermore, the azimuthal dependence of this scattering provides unique evidence that chromium forms a linearly polarised wave. In the vicinity of the K absorption edge, resonant X-ray magnetic scattering was observed. A consistent model of the magnetic scattering has been derived from the resonant and non-resonant magnetic amplitudes. The enhancement of the magnetic intensity arises primarily from dipole transitions from the core 1s level to 4p states. Quadrupole transitions to the magnetic 3d states are essentially non-existent due to their sensitivity to (and the absence of) orbital moment. This effect is predicted from atomic considerations of the 3d5 ( = 0) transition metal ions. Received 22 September 2000  相似文献   

4.
5.
《Physics letters. A》2014,378(30-31):2206-2210
We present a simple model for the resonant feature designated as the π plasmon in single-layer graphene supported by a metal substrate, which is excited via high-resolution electron energy loss spectroscopy (HREELS) in the off-specular scattering geometry. Using a two-dimensional, two-fluid hydrodynamic model for interband transitions of graphene's π and σ electrons and an empirical Drude–Lorentz model for the metal in the local approximation enables us to reproduce, at the qualitative and semi-quantitative levels, the typical experimental features of the HREEL spectra in the visible to the ultraviolet frequency range.  相似文献   

6.
We present a discussion of resonant Raman scattering by optical phonons at the E1 energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap.  相似文献   

7.
We report an experimental study of time characteristics of secondary emission in CdxZn1-xTe mixed crystals (x = 0.32) under resonant excitation with a picosecond dye laser. When the incident laser frequency is tuned on to the luminescence maximum of localized excitons, the decay curve of the intensity of “Raman-like” lines exhibits a single exponential decay. Off resonance, however, a short-lived component corresponding to Raman scattering appears in addition to the long-lived component. The intensity of the Raman component relative to that of the luminescence component increases with increase of the off-resonance frequency. From these temporal behaviors, we have found, for the first time, the transformation of resonant Raman scattering into luminescence in mixed crystals as a function of incident frequencies.  相似文献   

8.
We present recent studies of electronic excitations in nanofabricated AlGaAs/GaAs semiconductor quantum dots (QDs) by resonant inelastic light scattering. The resonant light scattering spectra are dominated by excitations from parity-allowed inter-shell transitions between Fock–Darwin levels. In QDs with very few electrons the resonant spectra are characterized by distinct charge and spin excitations that reveal the strong impact of both exchange and correlation effects. A sharp inter-shell spin excitation of the triplet spin QD state with four electrons is identified.  相似文献   

9.
We present an X-ray resonant magnetic scattering study at the Fe-K absorption edge of the BaFe2As2 compound. The energy spectrum of the resonant scattering, together with our calculation using the full-potential linear-augmented plane wave method with a local density functional suggests that the observed resonant scattering arises from electric dipole (E1) transitions. We discuss the role of Fe K-edge X-ray resonant magnetic scattering in understanding the relationship between the structure and the antiferromagnetic transition in the doped Ba(Fe1−x Co x )2As2 superconductors.  相似文献   

10.
We perform polarized Raman spectroscopy on aligned single-walled carbon nanotubes. This test system allows us to empirically address if resonant Raman scattering from on-axis dipole transitions follows a cos2 or a cos4 mosaic spread. We observe in the polar plots a clear cos4 dependence, in agreement with the equivalency of incoming and outgoing dipole transitions.  相似文献   

11.
We have made a direct determination of resonant screening (the depolarization field effect) in the collective intersubband excitations of a dense two dimensional electron gas. The effect was observed, for both odd and even parity transitions, in polarized inelastic light scattering spectra of a modulation-doped GaAs-AlGaAs superlattice. We offer a quantitative interpretation in terms of the Coulomb matrix elements for the transitions. Final state, or exciton-like, many-body effects are considered briefly.  相似文献   

12.
We report the investigation of electronic excitations in InGaAs self-assembled quantum dots using resonant inelastic light scattering. The dots can be charged via a gate by N=1, em leader,6 electrons. We observe excitations, which are identified as transitions of electrons, predominantly from the s to the p shell (s-p transitions) of the quasiatoms. We find that the s-p transition energy decreases and the observed band broadens, when the p shell is filled with 1 to 4 electrons. By a theoretical model, which takes into account the full Coulomb interaction in the few-electron artificial atom, we can confirm the experimental results to be an effect of the Coulomb interaction in the quantum dot.  相似文献   

13.
Intrinsic luminescence and Raman scattering in 4HCdI2 have been investigated at 2 K. Weak emission bands observed near the absorption edge are attributed to the phonon-assistes indirect exciton luminescence. Several new Raman lines are observed under resonant excitation in addition to known lines. The symmetry of the phonon modes associated with the indirect transitions as well as with Raman scattering is discussed.  相似文献   

14.
Hole-accumulation layers on silicon (100) are studied using resonant inelastic light scattering techniques. The observed intersubband transitions are in good agreement with Hartree calculations of Bangert and with recent infrared absorption experiments. The width of the spectra can be explained qualitatively using the nonparabolic k| dispersion of the individual subbands.  相似文献   

15.
We obtained new analytic closed form solutions for distortionless propagation of ultra-short optical pulses through a resonant medium with overlapping Q(j) transitions for j=2. The steady-state pulse shape of this solution has only one peak. Both 2π and 0π solutions are obtained.  相似文献   

16.
Raman scattering by optical phonons in InxGa1 ? x As/AlAs nanostructures with quantum dots has been studied experimentally for compositions corresponding to x = 0.3?1 under out-resonance conditions. Features due to scattering by GaAs-and InAs-like optical phonons in quantum dots have been detected, and the phonon frequencies have been determined as a function of the dot composition. With increasing excitation energy, a red shift is observed in the frequency of the GaAs-like phonon in quantum dots, which testifies to Raman scattering selective by the size of quantum dots. Under resonant conditions, multiphonon light scattering by optical and interface phonons is observed up to the third order, including overtones of the first-order phonons of InGaAs and AlAs materials and their combinations.  相似文献   

17.
We performed soft X-ray resonant scattering at the MnL 2,3- and OK edges of YMn2O5. While the resonant intensity at the Mn L 2,3 edges reflects the magnetic order parameter, the resonant scattering at the O K edge is found to be directly related to the macroscopic ferroelectric polarization. The latter observation reveals the important role of the spin-dependent Mn-O hybridization for the multiferroicity of YMn2O5. We present details about how to obtain correct energy dependent lineshapes and discuss the origin of the resonant intensity at the O K edge.  相似文献   

18.
The results of a theoretical and experimental investigation of resonant Mandelstam-Brillouin light scattering by thermal acoustic phonons with k=0 near the direct absorption edge (in the case of ZnSe crystals) are analyzed. The appearance of a new type of resonant increase in the intensity of Raman scattering by optical phonons with k≠0, which corresponds to resonance with the scattered light in the output channel, near the indirect absorption edge (in the case of semi-insulating GaP:N crystals) is also reported. The resonant gain reaches ∼4×103 at frequencies corresponding to overtone scattering assisted by LO(X) and LO(L) phonons. Exciton states belonging to both discrete exciton bands and to the continuous spectrum are considered as the intermediate states involved in the scattering processes in calculations of the resonant scattering tensors. In addition, all the intraband transitions, as well as the interband transitions between the conduction band, the valence bands, and the spin-orbit split-off band are taken into account, and good agreement with the experimental results is obtained. Fiz. Tverd. Tela (St. Petersburg) 40, 938–940 (May 1998)  相似文献   

19.
Motion of 57Fe can be observed on a scale of nsec to μsec through nuclear resonant forward scattering of synchrotron radiation. Additional information is obtained by measuring simultaneously incoherent nuclear resonant scattering at nonzero angles. In a glass, one measures the Lamb-Mößbauer factor; in the viscous phase, structural relaxation is observed directly. We apply the method to ferrocene / dibutylphthalate between 140 and 205 K. The mean relaxation times do not follow the observed temperature dependence of other, macroscopic relaxation measurements. We attribute this to a strong wavenumber dependence of the relaxation time. The prospects of nuclear resonant scattering for studying the dynamics of viscous liquids are discussed.  相似文献   

20.
The vibrational structure of the F2+ emission in LiF was investigated, together with the resonant Raman scattering from the first excited electronic state. The one phonon sideband of the emission and the resonant Raman spectrum were found to be very similar, as expected for transitions involving non degenerate electronic states.  相似文献   

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