Infrared cyclotron resonance in InSb,GaAs and Ge in very high magnetic fields

Infrared cyclotron resonance was observed in n-type InSb, GaAs and Ge in very high magnetic fields up to 1.3 MOe at room temperature using a CO₂ laser. A large shift of the cyclotron mass due to the non-parabolicity of the energy band was found in each material. The band edge masses of electrons at room temperature were evaluated to be $\text{m}{}^1\text{= 0.0127 m}$ for InSb, $\text{m}{}^1\text{= 0.065}$m for GaAs and $\text{m}{}^1{}_{\mathrm{t}}\text{= 0.086}$m for Ge. The linewidth was measured in GaAs and Ge in the high fields.     

On the cyclotron resonance width of an electron impurity system in two dimensions

Using the proper connected diagram expansion which incorporates the quasi-particle effect naturally we calculated the cyclotron resonance width γ in the extreme quantum limit.(a) γ ∝n

$\text{1}\text{2}$

_s B

$\text{1}\text{2}$

for a short range interaction, and (b) γ = π

$\text{1}\text{2}$

ze² κ^-1 <?crossed h.c.h;^-1 n

$\text{1}\text{2}$

_s for Coulomb interaction, are obtained. The field (B) and concentration (n_s)-dependence is in satisfactory agreement with experimental data. The variation γ = (γ²₁ + γ²₂ + …)

$\text{1}\text{2}$

of Matthiessen's rule γ = γ₁ + γ₂ + …, holds when there exist scattering centers of different kinds in the system.     

Observation of cyclotron resonance halfwidth in pure n-CdTe

“Persistent” cyclotron resonance of electrons in pure n type CdTe has been used to measure the halfwidth of the resonance as a function of the concentration of electrons. Although considerable improvement of appropriate theories has recently been made, the agreement is not as good as in some other experiments.     

On the theory of cyclotron resonance linewidth

Using self-consistent perturbation theory a formula for the a.c. magneto-conductivity is derived. This formula takes account of both self-energy and vertex correction effects and can be used to calculate the cyclotron resonance linewidth. For realistic values of the strength and the range of the impurity potential good agreement with results of experiments on InSb is obtained.     

Theory of cyclotron resonance width for electrons inelastically scattered by phonons

The cyclotron resonance width for a semiconductor under extreme high fields is calculated with the assumptions that electrons are scattered by acoustic phonons inelastically. The numerical results are in very good agreement with the recent experiments on Ge by Miura et al. (T ～ 300 K, B ～ 97 tesla). The energy-dependent widths arising from the relaxation processes with absorption and emission of a phonon show quite distinctive behaviors at low electron energies. At extreme low temperatures when few phonons are present, the width arising from the zero-point motion of the lattice is finite but very small. The charged-impurity scattering with the density as low as 10¹² cm^?3 numerically dominate the width due to the electron-phonon interaction below 10 K. The present theory supplements the previous work by Suzuki et al. where the elastic-scattering and high-temperature approximation were used.     

Doppler-shifted cyclotron resonance in tungsten plates with atomic pure surface

The surface resistance of thin monocrystalline W plates as a function of the constant magnetic field H directed along the normal to the sample surface is studied in the r.f. spectrum region. The sample surface was cleaned in high vaccum (10^-11 torr) or coated with the monomolecular impurity film. The oscillating with the magnetic field part R_osc due to the Doppler-shifted cyclotron resonance is studied. The doppleron oscillation amplitude is found to depend on the surface state and increases with the crystal cleaning. The observed changes are caused by the increase of the specular reflection coefficient for resonance electrons. With the deviation of the magnetic field from the normal to the plate surface, the doppleron wave undergoes a collisionless magnetic Landau damping and the signal amplitude decreases down to values comparable with that of Gantmakher-Kaner oscillations. Cleaning of the surface (and related increase of specularity) gives rise to a further decrease of the doppleron amplitude and appearance of additional interference maxima induced by the Gantmakher-Kaner effect.     

On the theories of cyclotron resonance line shape

A recent claim by Choi and Chung that the Argyres-Sigel theory of cyclotron resonance line shape is invalid is shown to be erroneous.     

On the mobility of very pure semiconductors at very low temperatures

The mobility μ of a very pure semiconductor at very low temperatures is investigated in terms of a model where electrons are scattered by charged impurities distributed uniformly in space, and the electron-electron interaction is taken into account by the Debye-Hueckel screening in the interaction potential. The equation for the current relaxation rate Γ, derived previously by the proper connected diagram expansion, incorporates the quasi-particle effect in a self-consistent manner. The solution of this equation at high carrier concentrations n yields the so-called Brooks-Herring formula. At lower concentrations, the solution deviates significantly from the latter. The solution is in general smaller than the standard expression for the rate based on the Boltzmann equation; and this is consistent with the existing conductivity data available. At the very low concentrations e.g. n = n₃ = 10¹³cm^?3 or lower for Ge, the mobility calculated is inversely proportional to the square-root of the impurity concentration n_s, and has a $\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$-dependence (T: temperature).

$\text{μ = 0.3597\&z.xl;h}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{k(k}{}_{\mathrm{B}}\text{T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{(ze)}{}^{\mathrm{?1}}\text{n}{}_{\mathrm{s}}{}^{\mathrm{<mtext>?1</mtext><mtext>2</mtext>}}\text{m}{}^1{}^{\mathrm{<mtext>?3</mtext><mtext>4</mtext>}}$

, where k is the dielectric constant. The conductivity data directly comparable with this formula are not available at present. However, the quasi-particle effect which led to this peculiar concentration-dependence should also show itself in the cyclotron resonance width; there, experiment and theory both show the ${}_{\mathrm{n}}{}_{\mathrm{s}}$-dependence for very pure semiconductors.     

On the lineshape of cyclotron resonance in indium antimonide

A recent theory of the cyclotron resonance lineshape of weakly polar semiconductor is applied to the case of indium antimonide. Some features are emphasized, like the line broadening and phonon assisted transitions. These effects are easily described by this theory.     

Optically detected cyclotron resonance in Ge and Si exchange interaction in impact dissociation

We have investigated optically detected cyclotron resonance (ODCR) and ordinary cyclotron resonance (CR) under the same condition, in Ge and Si, which include both high-purity and doped samples. In impact dissociation processes, which are the origin of ODCR, donorbound excitons have larger cross section for impinging electrons than for holes, and conversely, acceptor- bound excitons have larger cross section for holes than for electrons. Moreover, the ratio of impact dissociation cross section for holes to that for electrons varies with the number of excitons bound to an impurity. These phenomena are understood primarily in terms of exchange interaction between impinging carriers and constituents of bound excitons. In addition, it is found that the relative intensity of hole cyclotron resonance against electron resonance is larger in ODCR than in CR. This is understood in terms of exchange interaction by taking the many valley nature of the conduction band into account.     

On the charged-impurity-limited mobility for a very pure semiconductor

The low temperature mobility μ limited by charged impurities in very pure semiconductors (Ge) is interpreted in terms of the Coulomb collision in medium. The theory yields a peculiar dependence in temperature T and charged impurity concentration $\text{n}{}_{\mathrm{s}}\text{: μ ∞n}{}_{\mathrm{s}}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>2</mtext>}}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$.     

Quantum cyclotron resonance of two-dimensional holes in the Ge layers of Ge-Ge1−x Six heterostructures

Quantum cyclotron resonance of two-dimensional holes in strained germanium layers of the periodic heterostructure Ge-Ge_1−x Si_x has been observed and investigated for the first time. The results are compared with the data of electrophysical measurements in strong magnetic fields. A clear dependence of the magnitude of the longitudinal effective mass of the holes on the absolute magnitude of the elastic deformation of the germanium layers (splitting energy of the hole subbands) is observed. Fiz. Tverd. Tela (St. Petersburg) 39, 2096–2100 (November 1997)     

On the cyclotron resonance at skipping orbits in electron liquid

The possibility of the surface cyclotron waves propagation in metals with noncylindrical Fermi surface, placed in a weak magnetic field, is shown in the degenerate electron liquid theory case. Connected with the Fermi liquid constantA the contribution of such waves in the surface impedance of metals is calculated.     

On a possibility of negative cyclotron resonance in semiconductors

A possibility of negative conductance at the cyclotron resonance frequency of hot carriers in crossed electric and magnetic fields is investigated. It relies on sufficiently strong carrier-optical phonon interaction compared with other scattering processes. The condition is examined numerically but seems to hardly be satisfied in presently available crystals.     

On the effect of trapped particles in the regime of cyclotron resonance

The motion of particles in a finite amplitude wave, propagating obliquely to the homogeneous magnetostatic field is discussed. As follows from simple integral properties, in the neighbourhood of Doppler-shifted cyclotron resonance similar trapping effects appear as in a plasma without magnetostatic field. Consequences of this trapping are discussed, in particular, the possibility of a strong absorption of the wave, and the origin of stochastic instabilities caused by the perturbation of an effective trapping potential and leading to the acceleration of particles.The author is indebted to Dr. R.Klíma, Dr. J.Lacina and Dr. P.unka for interesting discussions and to Dr. .Körbel, Mrs. P.Jaroová and Mrs. A.Harmáková for numerical calculations.     

On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si

Unlike the electron-impurity interaction, the electron-acoustic phonon interaction generates a temperature-dependent cyclotron resonance lineshape. The difference is due to the temperature-dependent phonon distribution and the quasi-inelastic nature of the electron-phonon scattering. Calculations based on the proper connected diagram expansion are in qualitative agreement with experiments on inversion-layer electrons in Si in the temperature range 8–65 K.     

Amplitude characteristic of cyclotron resonance

The motion of a charged particle under the combined action of a magnetostatic field and a circularly polarized electromagnetic wave of phase velocity u higher than c, the wave being aligned with the field, is studied theoretically. A nonlinear resonance curve is found. Certain integrals of motion are derived.