Electric field modulated Raman scattering in CdS

We have observed electric field modulated Raman scattering by A₁ LO phonons in CdS. The field induced scattering is observed with a geometry in which Raman scattering by A₁ LO phonons is normally allowed. The interference of the field induced and allowed terms in the transition susceptibility leads to a modulated Raman scattering intensity proportional to the applied field. This is contrasted with data previously reported on field induced Raman scattering by E₁ LO phonons in a configuration in which the Raman scattering is normally forbidden and in which there is no interference between linear wavevector dependent and field induced terms in the transition susceptibility. Electric field effects on Raman scattering by TO phonons and by 2 LO phonons is also discussed.     

Study of the heavy-fermion compound CeRu<Subscript>2</Subscript>Si<Subscript>2</Subscript> by the small-angle neutron scattering method

In order to directly observe neutron scattering by heavy fermion quasiparticles at low temperatures, a CeRu₂Si₂ single crystal has been studied by the small-angle neutron scattering method. In the experiment, neutron scattering is observed at T = 0.85 K for momentum transfers q ≤ 0.04 Å^?1, which is treated as the orbital component of magnetic scattering by heavy fermion quasiparticles. It has been found that the application of a magnetic field H = 1 T leads to both an increase in the observed scattering and its anisotropy with respect to the field direction. Moreover, measurements in the magnetic field reveal additional scattering for q > 0.04 Å^?1, which is well described by a Lorentzian and is interpreted as neutron magnetic scattering by spin-density fluctuations with a correlation radius R_c ≈ 30 Å.     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

微带阵列天线的时域散射特性

本文用时域有限差分方法(FDTD)研究了微带阵列天线的时域散射场,分析了入射脉冲极化方向不同以及入射方向不同时的散射场的分布情况;讨论了时域散射场的时域波形以及频谱与微带阵列天线结构的关系;用散射场分离算法讨论了地板对于微带贴片阵列散射场的影响.研究发现,有限大地板的微带阵列天线的散射场主要是由地板的边沿电流产生的,同时微带贴片阵列的谐振频率与入射脉冲的极化方向有关,因此不同的极化方向对应于不同的散射频谱. 关键词： 时域散射 微带天线 FDTD     

Upper critical field of a superconductor with arbitrary spin-orbit scattering: CeCu2Si2 and UBe13

The upper critical field is determined for an even-parity singlet pairing state in the presence of arbitrary spin-orbit scattering. Comparison with critical field experiments suggests that superconductivity in CeCu₂Si₂ is a singlet pairing state, and in UBe₁₃ is either a triplet pairing state or is a singlet state with restrictive conditions that the pair orbital be nearly isotropic and that strong spin-orbit scattering increase strongly as the field increases.     

Measuring magnetic fields in plasmas by means of light scattering

The theory of light scattering in plasmas containing a magnetic field yields the special case of modulated scattering spectra. The modulation frequency is governed by the field in the plasma and is equal to the electron cyclotron frequency. In this investigation magnetic fields in a plasma were determined by a laser scattering experiment. The experimental data were: electron densityn _e=10¹⁶cm^?3, electron temperatureT _e=3.2 eV, scattering angle θ=90 °, scattering parameter α=0.6, and a maximum field in the plasma of 125 kG. The spectrum measured at the maximum magnetic field was modulated with 3.6 × 10¹¹ Hz. In scattering experiments with a field reduced by about 20% the observed modulation frequency was 2.8 × 10¹¹ Hz. A thermal spectrum with a smooth profile was found when no field was present in the plasma. Applying the theory of cyclotron modulated spectra one obtains from the scattering experiment magnetic fields of 128, 100, and 0 kG. Within the experimental accuracy these values agree well with the fields determined by means of magnetic probes. Other possible interpretations of the measured deviations from thermal spectra (modulation with the plasma frequency or additional cold electron components in the plasma) are discussed, but they afford no explanation. This experiment has domonstrated that magnetic fields in plasmas can be measured locally and almost without disturbance by means of light scattering.     

强磁场中n型锗的横向磁阻

本文就声子散射与电离杂质散射的两种散射机构探讨了半导体n型锗的横向磁阻。在简并强磁场情况下,得出声子散射机构在〈111〉,〈110〉和〈100〉三个方向上锗的横向磁阻的表示式。磁阻的平均值的相对大小(ρ_t<111>)/ρ₀:(ρ_t<110>)/ρ₀:(ρ_t<100>)/ρ₀=1:1.7:1.1,并且磁阻具有振荡形式。在非简并量子极限情况下分别对声子散射和杂质散射得出锗的横向磁     

Theory of resonant forbidden Raman scattering in semiconductors

The Raman tensors for the electric field-induced and wavevector dependent scattering from LO phonons in semiconductors have been calculated near critical points using a perturbation treatment. The resulting expressions have analytic closed forms such that the dependence of the forbidden scattering intensity on the incident photon energy and the applied d.c. electric field can be evaluated from available energy band parameters. The forbidden LO scattering intensity of GaAs in the back scattering configuration has been numerically calculated near the e₁ and E₁ gaps as functions of the incident photon energy and the dc electric field. The result shows strong interference between the two scattering processes. The allowed TO and LO Raman scattering intensities of GaAs were also calculated at a wavelength of 1.06 μm from the SHG and Faust-Henry coefficients, and compared with the forbidden LO intensity.     

Free carrier absorption in quantizing magnetic fields: Nonpolar optical phonon scattering

A quantum theory of free carrier absorption in nondegenerate semiconductors and in strong magnetic fields which was previously developed to treat the case when acoustic phonon scattering dominates the free carrier absorption process [1] is extended to treat the case when nonpolar optical scattering is important. When the electromagnetic radiation field is polarized parallel to the direction of the applied magnetic field, results are obtained which are similar to those when acoustic phonon scattering is dominant. The free carrier absorption is an oscillatory function of the magnetic field which on the average increases in magnitude with the magnetic field. However, more structure in the free carrier absorption occurs when nonpolar optical phonon scattering dominates. This is due to the fact that there are two periods in the oscillatory magnetic field dependence associated with the emission or the absorption of optical phonons during the intraband transitions. When the cyclotron frequency exceeds the sum of the photon and optical phonon frequencies, i.e. ω_c > θ + ω_o, the free carrier absorption is predicted to increase linearly with magnetic field when ?ω_c? k_BT. The magnetic field dependence of the free carrier absorption can be explained in terms of phonon-assisted transitions between the various Landau levels in a band involving the emission and absorption of optical phonons.     

High temperature superconductivity in the mixed state and the dynamics of charge carriers

A model to calculate the temperature and magnetic field dependence of the scattering time τ_ν(H, T) of quasiparticles by bound electron states in a vortex in high-temperature superconductors is proposed. In this model, the hydrodynamic interaction of a moving gas of quasiparticles with the discrete states of the vortex velocity field is regarded as quasielastic scattering and the resulting scattering time of quasiparticles is different from scattering of individual vortices. The normalized scattering time was found to decrease exponentially with increasing temperature. This behavior is due to the suppression of the amplitude of the superconducting order parameter as the temperature increases. This model accounts for the observed temperature and field dependence of the scattering time particularly at low-field regime.     

Magnetic field dependence of the neutron scattering from ErRh4B4

Magnetism in the reentrant superconductor ErRh₄B₄ has been studied by neutron scattering as a function of an applied magnetic field. For a temperature of 1.69 K long-range ferromagnetism is found in fields higher than 1 kOe. Considerable hysteresis is found in the neutron scattering intensity vs magnetic field curve and long-range order with a small Er moment remains when the field is reduced to small values.     

First order spin flop transition in yttrium iron garnet (YIG)

We have studied the field dependence of the sublattice magnetization of ferrimagnetic yttrium iron garnet (YIG) using neutron scattering. In contrast to the macroscopic spontaneous magnetization that shows the normal field dependence of a soft ferromagnet (sudden saturation at the demagnetization field and no hysteresis) in neutron scattering a field induced first order spin flop transition with considerable hysteresis is observed at a critical field of H_c∼580 G (external field). Considering that with neutron scattering the antiferromagnetic component of ∼4/5 of the total moment is detected preferentially while in the macroscopic magnetization samples the ferromagnetic component of ∼1/5 exclusively it becomes clear that ferromagnetic and antiferromagnetic component have a completely independent field (and temperature) dependence. This indicates that the two magnetic structures have to be viewed as two weakly coupled order parameters. In the zero field ground state the moment orientations of the two ordering structures are orthogonal. Only for fields H₀>H_c a nearly collinear ferrimagnetic order is established by the field.     

Crystal field and magnetoelastic interactions in Tb2Ti2O7

In terms of a semiphenomenological exchange charge model, we have obtained estimates of parameters of the crystal field and parameters of the electron-deformation interaction in terbium titanate Tb₂Ti₂O₇ with a pyrochlore structure. The obtained set of parameters has been refined based on the analysis of spectra of neutron inelastic scattering and Raman light scattering, field dependences of the forced magnetostriction, and temperature dependences of elastic constants.     

The magnetic phase diagram of CsNiF3 as determined by neutron diffraction

By neutron diffraction we investigated the magnetic properties of CsNiF₃ around and below T_N with and without magnetic field. We measured the phase diagram for 1.9 K ≤ T ≤ T_N = 2.7 K in an external field. The phase transition in this temperature-range is always continuous. We were able to measure the critical scattering connected with the magnetic phase transition. This critical scattering is centered around the position of the magnetic Bragg reflections. The critical scattering was found to be similar everywhere on the phase-separation line (H ≠ )0 and at T_N(H = 0). When applying a small field only processes were found, which correspond to a growing or diminishing of certain domains.     

Magnetic small-angle scattering of neutrons in amorphous ferromagnets

In amorphous Fe₄₀Ni₄₀C₁₄P₆ alloys the field dependence of the magnetic scattering cross section and the analysis of the scattering profile indicate the presence of stress centres corresponding to quasidislocation dipoles.     

Kroll-Watson-type theorem for potential scattering in a bichromatic laser field

Summary We show that for potential scattering of electrons in a bichromatic laser field a Kroll-Watson type of theorem can be derived in which the scatteringT-matrix element is composed of a renormalized on-shell matrix element for scattering without a field times a generalized Bessel function factor. The radiation field has two components of frequency ω₁ and sω₁ (s=2,3,…) and both components are out of phase by an angle ϕ. Our paper is a generalization of earlier investigations which were performed in the first-order Born approximation.     

Magnetic-field dependent phonon states in paramagnetic CeF3

Raman scattering experiments in paramagnetic uniaxial CeF₃ at helium temperature demonstrate a splitting of some degenerate (E_g)-phonon states in an external magnetic field parallel to the crystal axis. A linear splitting is observed in low fields, followed by a field independent (saturation) splitting in high fields. In addition, changes in the Raman scattering efficiencies and a reduction of the line width of phonon transitions are observed with increasing magnetic fields. No such effects are observed for magnetic fields perpendicular to the crystal axis. The splittings of degenerate phonon modes are related to the paramagnetic saturation 〈S_z〉.     

Binary and multiparticle electron-electron interaction on the surface

It is shown for the first time that electron-electron scattering of slow electrons with an energy of 10–50 eV at the surface of some metals is mainly an event of binary scattering of particles with conserved total momentum and energy, while analogous scattering at the surface of a semiconductor (n-Si) and an insulator (MgO) is a multiparticle event. A model is proposed, in which the electron subsystem of a solid is characterized by short-range order. Each electron is at the center of a spherical cell and surrounded by nearest neighbors (electrons) with a coordination number of 12. The overlap of the fields of charges gives rise to a negative potential U _c (r) ≈ U _c , which is virtually constant along the coordinate and contains spherical cells with a central field U(r) of individual charges. The value of constant negative potential U _c depends on the extent of electron screening, which is high for metals and low for semiconductors and insulators. In metals, scattering governed by the binary mechanism may take place (i.e., scattering of a primary electron in the central field of an electron of the metal); this is ensured by a relatively small value of constant potential U _c . The electron subsystem of the metal behaves as a Fermi gas of weakly interacting quasiparticles. Electron screening in semiconductors and insulators is insignificant, and constant negative potential U _c is an order of magnitude higher than the analogous potential in metals. Slow primary electrons are scattered in the total field of many charges before they reach the central field of an individual electron. The electron subsystem of a semiconductor and an insulator in the excitation range studied here behaves as an ensemble of strongly interacting particles.     

Arrays of interacting ferromagnetic nanofilaments: Small-angle neutron diffraction study

Magnetic properties of spatially ordered arrays of interacting nanofilaments have been studied by means of small-angle diffraction of polarized neutrons. Several diffraction maxima or rings that correspond to the scattering of the highly ordered structure of pores/filaments with hexagonal packing have been observed in neutron scattering intensity maps. The interference (nuclear-magnetic) and pure magnetic contributions to the scattering have been analyzed during the magnetic reversal of the nanofilament array in a field applied perpendicular to the nanofilament axis. The average magnetization and the interference contribution proportional to it increase with the field and are saturated at H = H _S . The magnetic reversal process occurs almost without hysteresis. The intensity of the magnetic contribution has hysteresis behavior in the magnetic reversal process for both the positive and negative fields that form the field dependence of the intensity in a butterfly shape. It has been shown that this dependence is due to the magnetostatic interaction between the filaments in the field range of H ≤ H _S . A theory for describing the magnetic properties of the arrays of interacting ferromagnetic nanofilaments in the magnetic field has been proposed.     

Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field

Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D _⊥ on longitudinal electron energy ? due to scattering by short-range (neutral) impurities. The behavior of D _⊥(?) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.