Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface

The conduction band electronic structure and the electron dynamics of the clean InSb(111)2×2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, τ∼12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism. Received: 9 May 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +46-0824/913-1, E-mail: gm@matphys.kth.se     

Magnetic properties of Ni:SiO<Subscript>2</Subscript> nanocomposites synthesized by a modified sol–gel method

Ni nanoparticles embedded in an amorphous SiO₂ matrix were produced by a modified sol–gel method. This method resulted in nanocomposites with a controlled size distribution and good dispersion of the metallic particles. The particle-size distributions were found to have an average radius of ∼3 nm, as inferred from transmission electron microscopy, X-ray-diffraction analysis, and magnetic measurements. Magnetic characterizations revealed that samples exhibit superparamagnetic behavior above the blocking temperature T_B, 20 K≤T_B≤40 K, and absence of a shift along the field axis on hysteresis loops measured at T≤T_B, indicating that the metallic nanoparticles are also free from an oxide layer. Received: 7 October 2002 / Accepted: 9 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +55-11/3091-6984, E-mail: rjardim@if.usp.br     

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode. Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn     

Investigation of size-driven phase transition in bismuth titanate nanocrystals by Raman spectroscopy

Raman spectroscopy was used to investigate the lattice dynamics and structural transformations in bismuth titanate (Bi₄Ti₃O₁₂) nanocrystals prepared by a chemical coprecipitation technique. The crystal structure of the samples of different grain sizes was determined by X-ray-diffraction analysis. The evolution of the Raman spectrum with grain size was characterized by an intensity decrease, a broadening of the line width, a frequency shift, and the disappearance of the Raman mode. The results revealed the appearance of a size-driven phase transition from orthorhombic to tetragonal phases at a critical size of 44 nm. This result is quite consistent with the X-ray-diffraction measurement and differential thermal analysis. The origin was attributed to the grain-size effect and explained by the surface-energy mechanism. Received: 26 June 2002 / Accepted: 18 August 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-25/3595535, E-mail: msz@nju.edu.cn     

Filling boron nitride nanotubes with metals

The authors’ endeavors over the last few years with respect to boron nitride (BN) nanotube metal filling are reviewed. Mo clusters of 1–2 nm in size and FeNi Invar alloy (Fe ∼60 at. %; Ni ∼40 at. %) or Co nanorods of 20–70 nm in diameter were embedded into BN nanotube channels via a newly developed two-stage process, in which multi-walled C nanotubes served as templates for the BN multi-walled nanotube synthesis. During cluster filling, low-surface-tension and melting-point Mo oxide first filled a C nanotube through the open tube ends, followed by fragmentation of this filling into discrete clusters via O₂ outflow and C→BN conversion within tubular shells at high temperature. During nanorod filling, C nanotubes containing FeNi or Co nanoparticles at the tube tips were first synthesized by plasma-assisted chemical vapor deposition on FeNi Invar alloy or Co substrates, respectively, and, then, the nanomaterial was heated to the melting points of the corresponding metals in a flow of B₂O₃ and N₂ gases. During this second stage, simultaneous filling of nanotubes with a FeNi or Co melt through capillarity and chemical modification of C tubular shells to form BN nanotubes occurred. The synthesized nanocomposites were analyzed by scanning and high-resolution transmission electron microscopy, electron diffraction, electron-energy-loss spectroscopy and energy-dispersive X-ray spectroscopy. The nanostructures are presumed to function as ‘nanocables’ having conducting metallic cores (FeNi, Co, Mo) and insulating nanotubular shields (BN) with the additional benefit of excellent environmental stability. Received: 10 October 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

High-repetition-rate eye-safe optical parametric oscillator intracavity pumped by a diode-pumped Q-switched Nd:YVO<Subscript>4</Subscript> laser

A high-repetition-rate eye-safe optical parametric oscillator (OPO), using a non-critically phase-matched KTP crystal intracavity pumped by an acousto-optically (AO) Q-switchedNd:YVO₄ laser, is experimentally demonstrated. It is found that the average OPO signal power at 1573 nm can be efficiently increased by increasing the pulse repetition rate. Moreover, the intracavity OPO process effectively shortens the pulse width so that it is in the range 5∼8 ns for pulse repetition rates of 10 to 80 kHz. As a result of the relatively short pulse, the peak power at 1573 nm is higher than 2 kW at a pulse repetition rate of 80 kHz. Received: 10 July 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +886-35/729-134, E-mail: yfchen@cc.nctu.edu.tw     

Germania/ormosil hybrid materials derived at low temperature for photonic applications

We report on germania/organically modified silane (ormosil) hybrid materials produced by the sol–gel technique for photonic applications. Acid-catalyzed solutions of γ-glycidoxypropyltrimethoxysilane mixed with germanium isopropoxide have been used as precursors for the hybrid materials. Planar waveguide films with a thickness of about 2 μm have been prepared by a single spin-coating process and low-temperature heat treatment from these high germanium content hybrid materials. Atomic force microscopy, thermal gravimetric analysis, UV–visible spectroscopy, and Fourier-transform infrared spectroscopy have been used to investigate the optical and structural properties of the films. The results have indicated that a dense, low absorption, and high transparency (in the visible range) waveguide film could be achieved at a low temperature. A strong UV-absorption region at short wavelengths ∼200 nm, accompanied by a shoulder peaked at ∼240 nm, has been noticed due to the neutral oxygen monovacancy defects. The propagation mode and loss properties of the planar waveguide films have also been investigated by using a prism-coupling technique. Received: 5 November 2002 / Revised version: 27 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +65-67909081, E-mail: ewxque@ntu.edu.sg     

Tunable ultraviolet optical parametric oscillator for differential absorption lidar measurements of tropospheric ozone

A pulsed optical parametric oscillator (OPO) with intracavity sum frequency mixing was developed generating energies of up to 16 mJ in the 281–293 nm wavelength range. Both OPO process and sum frequency mixing are pumped by the harmonics of a single, medium-sized Nd:YAG laser. The system is characterized by a high overall efficiency (∼4% conversion from 1064 nm to the UV), a very compact set-up and stable and reliable operation. This system was successfully employed to measure tropospheric ozone using the differential absorption lidar (DIAL) technique and shows much promise as a lidar transmitter in airborne case studies as well as in unattended lidar systems for long-term monitoring. An unattended ozone profiling system could already be successfully realized. Received: 1 April 2002 / Revised version: 30 May 2002 / Published online: 2 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-8153/28-1271, E-mail: Andreas.Fix@dlr.de     

Surface nanostructuring of silicon

Irradiation with polarized laser light of 248-nm wavelength induces the formation of periodic undulations ∼10-nm-highon flat silicon substrates. The wavelength of these periodic structures is a function of the light wavelength and the angle of incidence of the laser beam. Linear arrays of silicon nanoparticles with fairly uniform size that extended up to a millimeter were formed if the irradiation was performed using polarized light. When non-polarized laser light with the same fluence was used to illuminate an initially flat surface, non-aligned nanoparticle strings were obtained. However, if part of the irradiated area was microstructured, nanoparticle linear arrays resulted in the vicinity of the microstructured region. An analysis on the evolution of these nanostructures is presented. Nanocolumns could be grown on top of every cone of a microstructured surface upon cumulative laser irradiation with non-polarized light, reaching a height of ∼3 μm and a diameter of 100–200 nm. The mechanisms of nanocolumn origin and growth are analyzed. Received: 16 December 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-865/974-4115, E-mail: apedraza@utk.edu     

Excitation of Tm<Superscript>+3</Superscript> at a wavelength of 1064 nm

We report on the experimental study of the excitation mechanism of fluorescence in a 10000-ppm wt. Tm⁺³-doped ZBLAN fiber. Visible (at 453 nm and 480 nm) and near-infrared (∼800 nm) radiations were studied under excitation at 1.064 μm. The up-conversion mechanisms responsible are investigated, based on experimental data. The results show that the³ H ₄ and the ¹ D ₂ levels are predominantly excited by ion-ion cross-relaxation processes. Received: 19 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +41/31-631-3765, E-mail: Reda.El-Agmy@iap.unibe.ch     

Properties of an ultrashort-pumped near-IR high gain dye amplifier

An ultra-short-pumped optical dye amplifier operating in the near-IR (720 nm) has been developed. We present an experimental study of the input–output characteristics of this simple device in a traveling wave collinear configuration. In essence, the combined effects of the ultrafast nature of the anisotropy induced by the exciting laser pulse along with the short transit time across the length of the cell allow for optimal output conditions given the number of molecules in the active volume. Two distinct amplifying regimes have been observed depending on photon density. Typical gain values of 10⁴ of the narrow bandwidth (∼9 nm) subpicosecond output signal were measured. The 8-mm² beam cross section enables this photon amplifier to be utilized in time-gated imaging applications. Received: 12 December 2001 / Revised version: 13 May 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-819/564-5442, E-mail: Daniel.Houde@Usherbrooke.ca     

In situ observation of dynamics of plasma self-channeling and bulk modification in silica glasses induced by a high-intensity femtosecond laser

The time-resolved dynamics of plasma self-channeling and refractive index bulk modification in silica glasses were first observed in situ using a high-intensity femtosecond (110 fs) Ti:sapphire laser (λ_p=790 nm). Plasma channeling is induced in silica glass at an irradiation higher than an input intensity of 1.5×10¹² W/cm² and photoinduces either the refractive-index modification or optical crack modification. In the domain of refractive-index modification, the lifetime of induced plasma self-channeling was 20 ps and the structural transition time for forming the refractive-index change was 10 ps. In the domain of optical cracks, however, the lifetime of induced plasma formation was 30 ps and the structural transition time for forming the optical cracks was 40 ps. According to electron spin resonance spectroscopic (ESP) measurement, it was found that the defect concentration of the SiE^′ center increased significantly in the refractive index modification region. A maximum value of the refractive-index change Δn was measured to be 1.6×10^-2. The intensity profile of the output beam transmitted through the refractive-index modification showed that the bulk modification produced a permanent optical waveguide. Received: 8 April 2002 / Accepted: 12 April 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +81-48/462-4682, E-mail: shcho@riken.go.jp     

Growth of a textured quasicrystalline phase in Ti-Ni-Zr films prepared by pulsed laser deposition

The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by pulsed laser deposition on sapphire substrates at temperatures ranging from room temperature to 350 °C. Morphological and structural modifications have been followed by grazing-incidence and θ–2θ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analyzed by electron probe microanalysis. The in-depth variation of composition has been studied by secondary neutral mass spectroscopy. We show that pulsed laser deposition at 275 °C makes the formation of a 1-μm-thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible. Received: 7 June 2001 / Accepted: 18 February 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +33-3/8357-6300, E-mail: brien@mines.u-nancy.fr     

Electronic properties of Gd@C<Subscript>82</Subscript> metallofullerene peapods: (Gd@C<Subscript>82</Subscript>)<Subscript>n</Subscript>@SWNTs

Electronic properties of Gd@C₈₂ metallofullerene peapods, (Gd@C₈₂)_n@SWNTs, were investigated by electron energy-loss spectroscopy (EELS), scanning tunneling microscopy and spectroscopy (STM/STS), and field-effect transistor (FET) transport measurements. The results indicate that the electronic structure of Gd@C₈₂ metallofullerene peapods is completely different from that of intact single-walled nanotubes (SWNTs). For example, Gd@C₈₂-peapod-FETs show ambipolar behavior which is not observed in the empty SWNT-FETs under our experimental conditions. Furthermore, in semiconducting nanotubes the band gap can be varied from ∼0.5 to ∼0.1 eV using inserted Gd@C₈₂ endohedral metallofullerenes with a spatial periodicity of 1.1 to 8.0 nm, depending on the density of the fullerenes. The present findings suggest that metallofullerene peapods may point the way toward novel electronic devices. Received: 6 September 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-52/789-1169, E-mail: noris@cc.nagoya-u.ac.jp     

Catalysed growth of novel aluminium oxide nanorods

Micron-scale coral-like aluminium oxide structures have been generated by heating a mixture of AlB₂ and Co powders in a quartz boat at ca. 1050 °C under N₂. Upon sonication in acetone, the structures break down into elongated single-crystal aluminium oxide nanorods ranging from 20 to 200 nm in diameter and up to 5 μm in length. Single Co particles are often found attached to nanorod tips. A vapour–liquid–solid (V–L–S) mechanism appears to be responsible for the aluminium oxide nanorod growth. Received: 21 January 2003 / Accepted: 22 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. E-mail: d.walton@sussex.ac.uk     

Phase-stabilized 4-fs pulses at the full oscillator repetition rate for a photoemission experiment

Compressing pulses of a mode-locked extended-cavity Ti:sapphire laser using a standard single-mode fiber and tilted-front-interface chirped mirrors yields phase-stabilized 4-fs, 3-nJ light pulses at the full, 24-MHz, repetition rate. The demonstrated source paves the way towards exploring interactions sensitive to the carrier-envelope-offset phase, such as, for example, photoemission from solid targets at moderate intensities (∼10¹² W/cm²). Received: 13 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-38799, E-mail: apolonski@tuwien.ac.at     

GaN nanotweezers

A new form of GaN nanomaterial (nanotweezers) has been obtained by chemical vapor deposition on an etched cubic MgO (100) plane. The nanotweezers consist of a bottom rod and two arms. The bottom rods have diameters of about 100–150 nm and lengths of about 200–500 nm, on which two arms grow out. The bottoms of the arms are about 40–70 nm and the tops are about 15–30 nm in diameter, and 0.8–1.5 μm in length. X-ray and electron diffractions indicate the nanotweezers are zinc blende gallium nitride. We infer that the fabrication of the GaN nanotweezers is associated with small convex hillocks on the surface of the etched cubic MgO (100) single-crystal substrates and that the nanotweezers grow by a growth mechanism that is similar to vapor-phase heteroepitaxy. Received: 23 April 2002 / Accepted: 25 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/8264-9531, E-mail: xlchen@aphy.iphy.ac.cn     

VUV F<Subscript>2</Subscript> laser ablation of sodium chloride

We report an investigation of the ablation of NaCl crystals at the 157-nm wavelength of the F₂ laser where there is very strong excitonic absorption. Probe-beam deflection and etch-rate measurements show that the interaction is characterised by a low ablation threshold (∼80 mJ cm^-2) and a capability for controllable material removal at the nanometer level. Scanning electron microscopy of the exposed surfaces show this to be microscopically smooth but with fine cracks present. It is demonstrated that micron-scale features can be formed in NaCl using 157-nm laser ablation, a result attributed to the strongly localised optical and thermal nature of the interaction. The results are discussed within the framework of a thermal vaporisation model. Received: 29 May 2002 / Accepted: 17 July 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1482/465606, E-mail: p.e.dyer@hull.ac.uk     

Stoichiometric and structural alterations in GaN thin films during annealling

Annealling experiments were performed on GaN layers, grown on sapphire, over a wide range of temperatures (500–1100 °C). Rutherford Backscattering Spectrometry (RBS) was performed in random and 〈0001〉 channelling geometries using 2 MeV protons and helium ions to determine the stoichiometric and structural alterations produced during annealling. We present here, for the first time, a comprehensive and quantitative analysis of the depth distribution of both stoichiometric and structural changes in the near-surface region (∼750 nm) with a resolution of 50 nm for stoichiometric and 20 nm for structural changes. No decomposition was measured for temperatures up to 800 °C. Decomposition in the near-surface region increased rapidly with further increases in temperature, resulting in a near-amorphous region (500 nm) for annealling at 1100 °C. We describe the range of annealling conditions under which negligible stoichiometric and structural changes are observed. Our nanoscale resolution results are useful for the fabrication and operation of conventional and nanoscale optoelectronic and high-temperature devices. Received: 23 December 2002 / Accepted: 16 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. Fax: +65-6777/6126, E-mail: scip0229@nus.edu.sg     

Generation of 100 μJ pulses at 82.8 nm by frequency tripling of sub-picosecond KrF laser radiation

. Investigations of the efficient generation of powerful coherent radiation at 82.8 nm by frequency tripling of short-pulse KrF laser radiation are presented. Argon gas is selected as nonlinear medium due to the resonantly enhanced 3rd-order susceptibility χ⁽³⁾(-3ω,ω,ω,ω). Pulse energies of 100 μJ at 82.8 nm have been measured for a pump pulse energy of 14 mJ. An upscaling to more than 500 μJ is expected with available more powerful pump lasers. Features of this XUV source and possible applications are discussed. Received: 26 July 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-511/7622211, E-mail: reinhardt@iqo.uni-hannover.de