Shubnikov-de haas effect in kinetic approximation

The transverse and longitudinal magneto-conductivity of an electron-impurity system is calculated using a kinetic approximation based on the Mori formalism. The numerical results agree qualitatively with measurements on narrow gap semiconductors.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

Shubnikov-de Haas effect in p-type Sb2 Te3

From the Shubnikov—De Haas-effect in p-type Sb₂ Te₃-crystals with carrier concentrations between 8.3 x 10¹⁹/ cm³ and 1.2 x 10²⁰/ cm³ a two valence band model was deduced. For the lower band a twelve valley model is proposed, with the maxima located in the trigonal—binary planes. The energy difference between the two bands is derived as approximately 150 meV.     

Shubnikov-de haas effect and energy spectra of graphite-nitric acid intercalation compounds

Single crystals of first-to fourth-stage graphite-nitric acid intercalation compounds are synthesized. The Hall and Shubnikov-de Haas effects are investigated in magnetic fields up to 6 T at low temperatures (≈4.2 K). The temperature dependence of the resistance is measured in the basal plane. The parameters of the crystal structure and the characteristics of the energy spectra of charge carriers are determined for all the compounds prepared.     

Shubnikov-de Haas effect of n-inversion layers in InSb grain boundaries

Hall effect and Shubnikov-de Haas effect have been investigated in a n-inversion layer adjacent to the grain boundary in p-InSb bicrystals. The observed quantum oscillations of the magnetoconductivity result from a superposition of the Shubnikov-de Haas effect in two occupied subbands. The electron densities of the subbands n_si(n_s1=3.5 × 10¹¹cm^-2;n_s0= 1.1 × 10¹²cm^-2) and the effective cyclotron mass of the lower subband m_c0=(0.023 ± 0.002)m₀ have been evaluated.     

Optical switching and n2 measurements in CS2

Optical switching of picosecond pulses in CS₂ has been observed to occur at the second critical power for self-focusing. This has been confirmed in an independent direct measurement of the nonlinear refractive index at 1.06 μm and 0.53 μm. The measurement technique involves observations of far field spatial distortions of gaussian beams after passing through a nonlinear material.     

Shubnikov-de Haas oscillations in NbSe3

We have measured the resistivity of the linear transition metal trichalco-genide NbSe₃ in magnetic fields up to 180 kG. We observe large Shubnikov-de Haas oscillations. The measurements reveal a strong anisotropy in the a.c. plane perpendicular to the chain direction. A ratio of 3 in the cyclotron effective masses for the two orthogonal directions in this plane is determined. Spin splitting occurs for high magnetic field, and we obtain a Landé factor g of 2.45.     

NMR study of proton transport in the inorganic ion-exchange compounds SnO2·nH2O and TiO2·nH2O

Proton NMR relaxation times (T₂, T₁, T_1? and T₁D) are reported for hydrous tin oxide (SnO₂·nH₂O) and hydrous titania (TiO₂·nH₂O) in the temperature range 135 K<T<336 K at 60 and 20 MHz. The data show proton transport including exchange between three environments: (1) surface hydroxyl groups, (2) “acid solution” in micropores (diameter <100 Å) and (3) “acid solution” in macropores (diameter>1000 Å). The NMR behaviour has many features in common with that of adsorbed water systems. A consistent interpretation of both NMR and conductivity data is presented.     

Shubnikov-de haas type oscillations in the optical transmission of highly doped Cd3As2

It has been found that the Fermi energy of thin single crystals of Cd₃As₂ increases to 0.25 eV on annealing under vacuum at 425°C and then decreases to below any previously reported value. The magneto optical measurements which yielded oscillations independent of photon energy were analysed in terms of Shubnikov de Haas oscillations and were consistent with the Bodnar model for the conduction band of Cd₃As₂.     

Plasmon reflectivity of n-type ferromagnetic semiconductor HgCr2Se4

The reflectivity of n-type HgCr₂Se₄ was measured between 86 and 320 K for photon wavenumber from 250 to 1000 cm^?1. A critical behaviour of the plasmon parameters (plasmon enegy and plasmon scattering energy ) was observed at about 160 K but not in the vicinity of the Curie temperature T_c = 110 K. The effective mass and the optical mobility exhibit a rapid variation between 150 and 170 K.     

Fermi surface measurements of AuTe2I by the shubnikov—de haas effect

Fermi surface measurements of the layer-compound AuTe₂I have been performed by the Shubnikov—de Haas effect. One of the Fermi surfaces, which consists of a cylinder parallel to the b-axis or an ellipsoid with anisotropy of at least 10:1, reflects the layer structure of the material. We observe in addition two other Fermi surfaces of lower anisotropy     

HfO_2/SiO_2薄膜的激光预处理作用研究北大核心CSCD

激光预处理是提高激光薄膜抗激光损伤阈值的重要手段。对电子束蒸发方式镀制的HfO2/SiO2反射膜采用大口径激光进行了辐照,并采用激光量热计测量了激光辐射前后的弱吸收值。采用聚焦离子束(FIB)技术分析了激光辐照后薄膜的损伤形态并探究了损伤原因,首次采用扫描电镜拍摄到了节瘤部分喷发时的形貌图,并对其进行了FIB分析,为进一步了解节瘤的损伤过程提供了依据。实验发现,激光辐照过后的激光薄膜弱吸收明显降低,激光预处理有效减少了引起薄膜吸收的缺陷,存在明显的清洗效应;在本实验采用的HfO2/SiO2反射膜中,激光预处理技术对于祛除位于基底上种子形成的节瘤是有效的,原因是激光辐射过后该节瘤进行了预喷发并不会对后续激光产生影响;而激光预处理技术对位于膜层中间的可能是镀膜过程中材料飞溅引起的缺陷是无效的,需要通过其他手段对该类节瘤进行祛除。     

HfO2/SiO2薄膜的激光预处理作用研究

对电子束蒸发方式镀制的HfO2/SiO2反射膜采用大口径激光进行辐照,采用激光量热计测量了激光辐射前后的弱吸收值。实验发现HfO2/SiO2反射膜在分别采用1 064 nm和532 nm的激光辐照前后薄膜吸收分别从5.4%和1.7%降低到1.4和1.2%。采用聚焦离子束技术分析了激光辐照后薄膜的损伤形态并探究了损伤原因,发现：薄膜在激光辐照下存在节瘤的地方容易出现薄膜损伤,具体表现为熔融、部分喷发、完全脱落3种形态,节瘤缺陷种子来源的差异是导致其损伤机理也存在着巨大差异的主要原因。同时这些节瘤缺陷种子来源也影响着激光预处理作用效果,激光预处理技术对于祛除位于基底上种子形成的节瘤是有效的,原因是激光辐射过后该节瘤进行了预喷发而不会对后续激光产生影响;而激光预处理技术对位于膜层中间的可能是镀膜过程中材料飞溅引起的缺陷是无效的,需要通过飞秒激光手段对该类节瘤进行祛除。     

Investigation on the magnetocaloric effect in DyNi2, DyAl2 and Tb1−nGdnAl2 (n=0, 0.4, 0.6) compounds

The magnetocaloric effect (MCE) in the DyNi₂, DyAl₂ and Tb_1−nGd_nAl₂ (n=0, 0.4, 0.6) was theoretically investigated in this work. The DyNi₂ and DyAl₂ compounds are described considering a model Hamiltonian which includes the crystalline electrical field anisotropy. The anisotropic MCE was calculated changing the magnetic field direction from 〈1 1 1〉 to 〈0 0 1〉 in DyNi₂ and from 〈1 0 0〉 to 〈0 1 1〉 in DyAl₂. The influence of the second- and first-order spin-reorientation phase transitions on the MCE that occurs in these systems is discussed. For the calculations of the MCE thermodynamic quantities in the Tb_1−nGd_nAl₂ systems we take into account a two sites magnetic model, and good agreement with the available experimental data was obtained.     

Magnetocaloric effect in DyCu2

The magnetocaloric effect of the rare-earth intermetallic compound DyCu₂ is explored through magnetization measurements. DyCu₂ is paramagnetic at the room temperature but becomes antiferromagnetic below 27 K (Neel temperature). Strong temperature and field dependence of magnetization in DyCu₂ at and around the Neel temperature lead to a large magnetocaloric effect. An appreciable magnetocaloric effect persists well above the Neel temperature probably because of the presence of short-range ferromagnetic correlations in the paramagnetic state of DyCu₂. This along with the absence of magnetic hysteresis lead to a large effective refrigerant capacity of 194 J/kg below 44 K, which makes the material important as a potential magnetic refrigerant for the cryogenic liquefier cycles.     

Transport phenomena in low and high magnetic field (Shubnikov-de haas effect) in n-type Ga1−xAlxSb alloys

Galvanomagnetic measurements have been performed on n-type Ga_1?xAl_xSb with $\text{x ? 0.3}$. For the first time the Shubnikov-de Haas oscillations have been observed. The Г band contribution to the conductivity for x < 0.15 was clearly pointed out from the measurements of the periods of oscillations and Hall effect. The conduction effective mass at the Fermi level was deduced for several samples.     

Optical properties of natural quantum-well compounds (C6H5-CnH2n-NH3)2PbBr4 (n=1-4)

This paper describes the synthesis and characterization of self-assembled organic-inorganic layered perovskite compounds, (C₆H₅-C_nH_2n-NH₃)₂PbBr₄ (n=1-4). the effect of the number of carbon atoms of the alkyl chain length (n) on optical properties has been studied. (C₆H₅-C_nH_2n-NH₃)₂PbBr₄ films fabricated by spin-coating are microcrystalline form, single phase and oriented with the c-axis. Crystallinity, the maximum PL intensity and the lifetime of exciton emissions varied with the number of carbon atoms. the lowest-energy exciton splits into a few fine-structure levels at low temperatures. Time-resolved photoluminescence spectra reveal that (C₆H₅-C_nH_2n-NH₃)₂PbBr₄ shows both singlet and triplet excitons. with decreasing temperature, triplet exciton emissions become dominant for (C₆H₅-C_nH_2n-NH₃)₂PbBr₄ (n=1-3), while (C₆H₅-C₄H₈-NH₃)₂PbBr₄ shows mainly singlet exciton emissions. The intersystem crossing from excited singlet state to triplet state plays an important role in the relaxation process of excitons.     

Photo-lightening effect in crystalline As2S2 films

A photo-induced shift of the optical transmission edge to a shorter wave-length in crystalline As₂S₂ films has been studied at room temperature and liq. N₂ temperature. This effect has been investigated by X-ray diffraction and scanning electron micrograph observations.     

Shubnikov de haas oscillations in Cd3-xZnxAs2 alloys

These first measurements of the Shubnikov de Haas effect in Cd_3-xZn_xAs₂ alloys were performed with x values ≤0.6. The electron effective mass is shown to be anisotropic but much less than Cd₃As₂ samples of similar Fermi energies. Spin splitting was observed yielding g values of up to 43 for the purest sample.     

Electronic anomalous mass near the resonant acceptor level E2 from Shubnikov-de Haas measurement in Hg0.82Cd0.18Te

Shubnikov-de Haas measurements on Hg_0.82Cd_0.18Te samples at 1.8 and 4.2 K temperature are reported. The obtained effective mass is compared with the one calculated from the non-parabolic model. The discrepancy between the two values is attributed to the presence of the E₂ resonant acceptor level. The density of states induced by this virtual level in the conduction band, is strongly dependent on stoichiometry and can be adjusted by thermal annealing.     

Wing profile measurements of the Na-doublet lines in C2H2/O2/N2, H2/O2/N2 and H2/O2/Ar frames at 1 atm

Fluorescence-excitation (wing) profiles of the Na-D doublet lines were measured over a wavelength range extending from 0.3 to 200 Å from the line center for the red D₁ and blue D₂ wings and from 0.3 to 3 Å for the red D₂ and the blue D₁ wings, respectively. The line profiles were determined with the aid of a tunable CW dye-laser as a background source by measuring the total fluorescence intensity observed on detuning the laser wavelength. The flames were premixed, laminar, shielded flames at 1 atm, with temperatures ranging from 1860 to 2270 K; N₂ and Ar served as diluent gases. The line core and near-wing profiles (i.e. the region covering 0.3<Δλ<7 Å for the outer wings and 0.3<Δλ<3 Å for the inner ones) in all of the flames studied appeared to have the same frequency dependence, regardless of the nature and concentrations of the gases used. The blue D₂-line profile followed an unexpected (-2.2) law, while the other three profiles obeyed the theoretically expected (-2) law (the dispersion profile function). The line profile in the Δλ range between the impact and quasistatic regions was found to depend on the main perturbers involved. We found that the far blue D₂- and red D₁-wings in the Ar-diluted H₂/O₂ flame obeyed the (-$\text{5}\text{4}$) and (-$\text{3}\text{2}$) laws, respectively, as predicted by the quasi-static theory for the Lennard-Jones interaction. For the N₂-diluted C₂H₂/O₂ and H₂/O₂ flames, we did not find these wing dependences in the Δλ range investigated.