Some thermomagnetic transport effects of Cd3P2

In this paper for the first time measurements are presented of the transverse Nernst effect, the Righi-Leduc effect and the Maggi-Righi-Leduc effect in cadmium phosphide. The measurements were performed on unoriented Cd₃P₂ single crystals, with electron concentrations in the range 0.05–1.7 × 10²⁴m^?, at 110 and 300 K in magnetic fields up to 1.8 $\text{Wb}\text{m}{}^2$. We also measured the room temperature dependence of the zero-field Seebeck coefficient on electron concentration of a large number of undoped and Cu-doped samples. A reversal of sign of the transverse Nernst effect was observed at an electron concentration of about 1.2?1.5 × 10²⁴ m^?3. This reversal of sign and the zero-field Seebeck coefficient vs electron concentration for undoped material can be quantitatively described by a Kane-type conduction band with ?_g = 0.50 eV, m¹_e = 0.040 m_o and a scattering parameter r = ?1. (Optical phonon scattering, if interpreted in a single mode.) This strongly confirms the results of Radautsan et al. that Cd₃P₂ has a non-parabolic Kane-type conduction band. The Righi-Leduc and Maggi-Righi-Leduc effect measurements at 110 K on samples with high electron concentrations, yielded Lorenz numbers only half their theoretical values, indicating that the electron scattering contains an inelastic contribution.     

Optical band-gap of Zn3As2

Absorption measurements of single Zn₃As₂ crystals were made at temperatures 5, 80 and 300 K. Free-carrier absorption is interpreted in the simple classical model. Interband absorption shows contributions from Urbach-like excitations. The direct optical gap has been estimated as 0.99 eV at 300 K, 1.09 eV at 80 K and 1.11 eV at 5 K. The linear dependence of band-gap on temperature was found in the range 80–300 K with dE_g/dT = ? 4.55 × 10^?4eVK^?1.     

Fundamental reflection spectrum and the electronic band structure of chlorine-doped CdTe

The effect of chlorine impurity on the fundamental reflection spectrum and the electronic band structure of cadmium telluride crystals has been studied. At the impurity concentration N _Cl>5.0×10¹⁹ cm^?3, a peak appears in the reflectance spectra. This peak is due to electron transitions at the X point of the Brillouin zone from the upper split valence band to Cl levels lying 0.05 eV above the Γ minimum of the conduction band. The other features in the reflectance spectra and band structure are explained as being due to the effect of spin-orbit splitting at the X point and to indirect electronic transitions from the Cl levels to the Γ minimum.     

Dark-current relaxation in EuGa2S4 single crystals

The results of the investigation of dark-current relaxation in EuGa₂S₄ single crystals are reported. The depth and concentration of the traps are found to be E_t = 0.79 eV and N_t = 1.64 × 10¹⁴ cm^?3, respectively.The charge accumulation region (d_c = 3.3 × 10^?5 cm) and contact capacitance (C_c = 1.23 × 10^?10 F) are also estimated.     

Conductivity enhancement in fluorite-structured Ba1−xLaxF2+x solid solutions

The ionic conductivity of single crystals of the fluorite-structured solid solutions Ba_1?xLa_xF_2+x(10^?3 <×<0.45) has been studied as a function of temperature and composition in the range 300–900 K. Three regions can be discerned in the concentration dependence of the ionic conductivity: a dilute concentration region (x<10^?3), where classic relations between solute content and ionic conductivity hold; an intermediate concentration region (10^?3<x?5×10^?2), where large changes occur in the conductivity activation enthalpy and the magnitude of the conductivity; and a concentrated solid solution region (x?5×10^?2) characterized by enhanced ionic motion. In the dilute region the migration enthalpy for interstitial fluoride ions is determined to be 0.714 eV, while a value of 0.39 eV is found for the (La_BaF_i)^X association enthalpy. The defect chemistry in the intermediate concentration region is shown to be controlled by a superlinear increase of the concentration of mobile defects, while in the concentrated solid solution region a composition-independent amount of ≈1 mole% of interstitial fluoride ions with enhanced mobility, carry the current.     

The average structure of 5.10-Dihydro-5.10-Diethylphenazinium-Iodide (E2P·I1.6): A new linear chain Polyiodide compound

Upon oxidation of 5.10-dihydro-5.10-diethylphenazine (E₂P) with iodine golden-green lustrous crystals of a compound with stoichiometry E₂P.I_1.6 were isolated. The compound crystallizes in the tetragonal space group D₄² with $\text{a = 12.321(2)}\text{A}\text{?}$ and $\text{c = 5.330(2)}\text{A}\text{?}$. The E₂P and I form interpenetrating incommensurate sublattices along c, with an iodine repeat distance of 9.7 Å. Static susceptibility measurements at room temperature give χ_g = + 0.994 × 10^?6g^?1 × cm³. This corresponds to one unpaired electron spin per two formular units. Single-crystal EPR indicates that the paramagnetism is associated with weakly interacting E₂P⁺ cation radicals. The 300K-d.c. conductivity of 3×10^?2Ω^?1cm^?1 and activation energy of 0.17±0.02eV for single crystals is consequently associated with the polyiodide chains, and not with the E₂P⁺ cation radicals.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method

The results of studying the physical properties of thin CdTe films obtained by the thermal evaporation method have been presented. The optical constants and the band gap of the films under study have been determined (E _g = 1.46 eV). It has been established based on the investigation of optical properties and the Raman spectrum of the films that they possess high structural quality. The activation energy of the electrical conductivity of CdTe films has been determined: E _a = 0.039 eV. The measured spectral dependences of the impedance of CdTe thin films are characteristic of the inhomogeneous medium with two time constants: τ_gb = R _gb C _gb = 1/ω_gb = 1.62 × 10^?3 s and τ_g = R _g C _g = 1/ω_g = 9.1 × 10^?7 s for grain boundaries and grains, respectively.     

Pressure dependent optical absorption edge shift and compressibility of CdCr2Se4 single crystals

The pressure shift of the optical absorption edge (dE_g/dp = (1.1 ± 0.1) × 10^?6 eV bar^?1) and the compressibility (κ = (1.3 ± 0.) × 10^?6 bar^?1) of single crystalline CdCr₂Se₄ have been measured at ambient temperature. These data suggest an interpretation of the fundamental absorption in terms of either p → p interband or p → localized d charge transfer transitions, but exclude excitations involving s-band states.     

Luminescence and decay times of CsI:In+

Luminescence spectra of single crystals of CsI:In⁺ excited in the A(304 nm), B(288 nm), C(268 nm) and D(257 nm) absorption bands have been studied in the temperature range 4.2–300 K. Excitation in the A band at 4.2 K gives rise to the principal emission at 2.22 eV accompanied by a partly-overlapping weak band at 2.49 eV. An additional emission band at about 2.96 eV is observed on excitation in the B, C or D bands. Yet another emission band located at 2.67 eV is excited only in the D band. The relative intensities of the bands are very sensitive to excitation wavelength as well as to temperature. The origin of all these bands is assigned in terms of a model for the relaxed excited states (RES). All the luminescence spectra were resolved into an appropriate number of skew-Gaussian components. Moments analysis leads to a value of (1.35 ± 0.02) × 10¹³ rad s^-1 for the effective frequency (ω_eff) of lattice vibrations coupled to the RES. At the lowest temperature, the radiative decay times of each of the intracenter emission bands (2.22, 2.49 and 2.96 eV) show a slow decay ( ～ 10–100 μs) and a fast decay ( ～ 10–100 ns). The 2.96 eV band, which is assigned to an emission process which is the inverse of the D-band absorption, exhibits a single decay mode ( ～ 10 μs). The intrinsic radiative decay rates (k₁, k₂), the one-phonon transition rate (K) and the second-order spin-orbit splitting (D) for the RES responsible for the principal emission are: k₁ = (6.0±-0.3)×10³ s^-1, k₂ = (1.33±-0.06)×10⁵ s^-1, K = (2.4±-0.4)×10⁷ s^-1 and D = (13.8±-0.5) cm^-1.     

Nuclear magnetic resonance of intermetallic compounds Gd2Ni17−xAlx

²⁷Al Knight shifts vs temperature and magnetic susceptibility for the intermetallic compounds Gd₂Ni_17?xAl_x (x = 17; 16.2; 16; 15) are presented. The results are discussed in terms of the uniform polarization model fo the conduction electrons by the 4f and 3d spins localized on the Gd and Ni ions. The phenomenological exchange constants J_sf and J_sd range between ?1.80×10^?3 and 1.19×10^?3 eV and ?0.63×10^?3 and ?0.52×10^?3 eV, respectively.     

Electrical conduction mechanism and carrier trapping in β-metal free phthalocyanine single crystals

The dark electrical conductivity of β-metal free phthalocyanine single crystals has been investigated over the temperature range 273–600°K, at a reduced pressure of 10^?7 torr. The results obtained are in accordance with the model proposed by Barbe and Westgate[5] for this material, in which the energy gap between the top of the valence band and the bottom of the conduction band is determined to be 2·00 eV. At temperatures below about 410°K, the conduction process is consistent with the presence of an electron trapping level located 0·32 eV below the conduction band edge, with a density of 7×10¹⁶ cm^?3, and a donor level of density 2×10⁷ cm^?3 at the same energy. Above about 410°K, there is evidence to suggest that the conduction process is intrinsic.     

Magnetic and ESR studies of Er3+ in lanthanum dihydride LaH2

Er³⁺ electron spin resonance ESR and magnetic susceptibility have been studied in metallic lanthanum dihydride host. The ESR spectrum contains a single asymmetrical line with g-factor g = 6.68 ± 0.05 close to that expected for Γ₇ as ground state. The experimental magnetic susceptibility was interpreted on the base of LLW cubic crystal field Hamiltonian. The best fit of the experimental data has been obtained for the following B₄ and B₆ crystal field parameters: B₄ = ?5.2 × 10^?3 K; B₆ = 3.8 × 10^?5 K which support the anionic-like character hydridic model of hydrogen atoms in this hydride.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics

The (NH₄)₂S treatment can reduce native oxides and passivate GaAs. Atomic layer-deposited Al₂O₃ can further remove the residue native oxides by self-cleaning. Stacked with high dielectric constant TiO₂ prepared by atomic layer deposition on Al₂O₃/(NH₄)₂S-treated GaAs MOS capacitor, the leakage current densities can reach 4.5 × 10^?8 and 3.4 × 10^?6 A/cm² at ±2 MV/cm. The net effective dielectric constant of the entire stack is 18 and the interface state density is about 4.2 × 10¹¹/cm²/eV. The fabricated enhancement-mode n-channel GaAs MOSFET exhibited good electrical characteristics with a maximum g _m of 122 mS/mm and electron mobility of 226 cm²/V s.     

Electron beam interactions with CO on W {100} studied by Auger electron spectroscopy

The interaction of 2500 eV electrons with carbon monoxide chemisorbed on tungsten {100} was investigated by rapid-scan Auger electron spectroscopy. When no α state was present the O and C signals from the β state of CO were invariant during electron bombardment, giving an upper limit estimate for the electron stimulated desorption cross section, Q_β of 2 × 10^?21 cm². With the crystal at room temperature and saturated with CO, however, electron-beam induced accumulation of carbon was observed and characterised, the rate of the process being independent of CO pressure at pressures above 2 × 10^?8 Torr. At 450 K the rate was found to be pressure dependent up to at least 6 × 10^?7 Torr. A model is proposed for the accumulation process, which is based on electron beam dissociation of α₂-CO to form adsorbed carbon and gaseous O and the creation of new sites for further α₂-CO adsorption; it is in quantitative agreement with the results and yields a cross section for ESD of α₂-CO (Q_α2 = 1.55×10^?18cm²) in close agreement with direct measurements.     

The exciton absorption in deformed germanium

Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as E_{g 0} = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as E_ex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of E_g for κ = 0 in the range 77 °–297 ° K is (dE_g/ /dT)_p =?3.50 · 10^?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dE_g/dT)_d = (?1.5±0.1) · 10^?4 eV/deg. The half-width σ ≈ 5 · 10^?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10^?12 sec.     

Electrical properties of narrow gap semiconductor PtSb2

Results of measurements of conductivity, Hall and Seebeck coefficients of tellurium doped n-type crystals of platinum antimonide are presented. The Hall coefficient and the Seebeck coefficient undergo sign inversion twice, below and above room temperature. The detailed analysis of the experimental results revealed that below 200 K PtSb₂ can be described by a simple conduction and valence band model. The energy gap E_g = (110?0.15 × T) (meV), the electron conductivity mass m_n^c/m₀ = 0.35, acoustic phonon limited electron mobility 〈μ_a〉_n = 3 × 10⁶ T^{?$\text{3}\text{2}$} ($\text{cm}{}^2\text{V · s}$) and mobility ratio 〈μ_a〉_n/〈μ_a〉_p = 0.4 are determined. However, at higher temperatures a more complicated valence band model is needed to account for the experimental results. The arguments for the existence of subsidiary valleys in the valence band are presented.     

Dipole reorientation from bound-polaron hopping in single crystal NiO

We report observation of a first order thermal depolarization peak at 190 K in NiO single crystals which we attribute to the reorientation of Ni³⁺Ni_V²⁺ dipoles. Analysis of the data in terms of these bound polarons, using a non-adiabatic hopping model, yields values of activation energy, E = 0.31eV and the polaron band width, J = 8.6 × 10^?6 eV.     

Intraband and interband optical transitions in Zn3AS2

Absorption measurements were made on single crystals and thin films of Zn₃As₂; within the photon energy range of 0.12–1.16 eV at temperatures of 300, 80 and 5 K and reflectivity was measured in the range of 1.0–5.5 eV at 300 K. Absorption below the fundamental edge has been interpreted as a process involving three mechanisms: (i) free-carrier absorption, (ii) intraband transitions between levels in the valence band, and (iii) direct transitions from valence levels to the acceptor level/band. The fundamental absorption edge has been ascribed to direct interband transitions from three valence levels to one conduction level. An isotropic three-level Kane band model has been used to interpret the experimental data, modified by introducing the light-hole level split from the heavy-hole level due to the tetragonal crystal field. A reasonable fit of the model to the experimental results has been obtained in the region of both intraband and interband absorption for the following set of parameters: E_g = 0.985 eV, Δ_SO = 0.30 eV, Δ_CF = 0.05 eV, m^*_hh = 0.36 m₀ and P = 4 × 10^?10eVm (at 300 K). A proposed Zn₃As₂ energy-band model near the Γ point is described to interpret the observed absorption.