Shallow acceptor bound exciton and free exciton states in high-purity zinc telluride

We investigated excitons bound to shallow acceptors in high-purity ZnTe and measured excitation spectra of two-hole luminescence lines at 1.6 K using a tunable dye-laser. The electron-hole coupling in the bound exciton (BE) states appears to be very different for the various acceptors even for almost identical exciton localisation energies. Three different types of BE are reported. For the Li-acceptor BE we observe three sub-components separated by 0.22 and 0.17 meV and interpreted as J = $\text{1}\text{2}$, $\text{3}\text{2}$, $\text{5}\text{2}$ states. The Ag-acceptor BE exhibits a strong ground state and a weak excited state at 1.3 meV higher energy. For the as yet unidentified k-acceptor we observe a single BE level, degenerate with the Ag-acceptor BE ground state. Dips in the excitation spectra due to absorption into free exciton 1S, 2S, and 3S states yield an exciton Rydberg R₀ = 12.8±0.3 meV and a free exciton binding energy FE(1S) = 13.2±0.3 meV.     

Multiplicities in lepton-hadron processes

The average multiplicity in deep inelastic electro- and neutrinoproduction at large ω(ω～s/Q² + 1) is related in Feynman's version of the parton model to the average multiplicities in high-energy electron-positron annihilation and hadron-hadron scattering. The relation is: , where C_e⁺e^? and C_h are, respectively, the coefficients of ln(s/M_1⊥²) in the multiplicities from e⁺-e^? and P-P in to hadrons, and M_1⊥ is an average transverse mass.     

Fine structure of neutral-acceptor bound excitons in direct gap semiconductors with zinc blende structure

We study the influence of the short-range electron-hole exchange interaction (EHEI) on the (A°, X)-bound exciton ground state, for direct gap semiconductors with positive spin-orbit coupling at $\text{k}\text{= 0}$. The envelope contribution to the EHEI is computed using our previously obtained 35-term Page and Fraser-type wave function, showing that the EHEI are comparable in the cases of excitons and bound excitons. The crystalline part of the EHEI lifts the degeneracy between the states $\text{J =}\text{5}\text{2}$, (Γ₇ + Γ₈) and $\text{J =}\text{3}\text{2}\text{(Γ}{}_8\text{)}$, the former being lower in energy. In the case of GaAs, the EHEI is smaller than the j?j coupling of the two holes, so that the states $\text{J =}\text{1}\text{2}\text{(Γ}{}_6\text{)}$ are the highest in energy in agreement with the experimental data, relative to shallow impurities.     

Event shapes in e+e− annihilation

We present a complete set of rotationally invariant observables (H_l) which characterizes the ‘shapes’ of final states in e⁺e^? annihilation. They are infrared stable when calculated in QCD perturbation theory. We compare the ‘shapes’ of final states from the processes $\text{e}{}^{\mathrm{+}}\text{e}{}^{\mathrm{?}}\text{→}\text{q}\text{q}\text{,}\text{e}{}^{\mathrm{+}}\text{e}{}^{\mathrm{?}}\text{→}\text{q}\text{q}\text{(}\text{G}\text{)}$ and from the three-gluon decays of heavy vector mesons. We also consider the production and decay of heavy quarks and leptons. Using a realistic model for the development of hadron jets, we find that for c.m. energies above about 10 GeV, these processes may be clearly distinguished by their distributions in the H_l. We indicate how our analysis may be extended to deep inelastic lepton-hadron interactions and hadron-hadron collisions involving large transverse momenta.     

Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement

Magneto-optical absorption spectra due to exciton states and Landau-levels were measured in GaAs/AlAs multi-quantum-wells. By extrapolating the photon energies of the absorption peaks to zero magnetic field, the lowest state (1S) heavy hole exciton binding energy, E^B_$\text{h}$(1S), was obtained as a function of well size L_z in the range $\text{58}\text{A}\text{?}\text{?}\text{L}{}_{\mathrm{z}}\text{?252}\text{A}\text{?}$. The L_z dependence of E^B_h showed the change of the exciton character from three-dimensional to two-dimensional with decreasing L_z. The diamagnetic shift observed for the heavy hole exciton peak was larger than that for the light hole exciton peak, showing the anisotropic nature of the Luttinger-Kohn Hamiltonian. The diamagnetic shift of the heavy hole exciton peak became smaller as L_z was decreased, suggesting the enhancement of the two-dimensional exciton character.     

A monte-carlo/molecular dynamics study of the diffusional recombination kinetics of C(a) + O(a) → CO(g) on Pt(111)

The diffusion constants for C and O adsorbates on Pt(111) surfaces have been calculated with Monte-Carlo/Molecular Dynamics techniques. The diffusion constants are determined to be D_C(T)=(3.4 × 10^?3e^{$\text{?13156}\text{T}$})cm²s^?1 for carbon and D_O(T) = (1.5×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1 for oxygen. Using a recently developed diffusion model for surface recombination kinetics an approximate upper bound to the recombination rate constant of C and O on Pt(111) to produce CO_(g) is found to be (9.4×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1.     

Scaling of the “superstable” fraction of the 2D period-doubling interval

The scaling properties of a “superstable” parameter interval, $\text{C}$, where the eigenvalues about a period-2n orbit are complex, are derived for 2D period-doubling maps. The ratio of $\text{C}$ to the whole parameter interval, between the nth and the (n+1)st bifurcation, is shown to be a universal function of the effective jacobian, B_e, only (B_e≡B²ⁿ, B is thejacobian of th e map). Unlike the whole period-2ⁿ interval, $\text{C}$ has a convergence rate that behaves as $\text{4.6692016×B}{}^{\mathrm{<mtext>-1</mtext><mtext>4</mtext>}}{}_{\mathrm{e}}$ as B_e↓), wh ile its complement has a convergence rate 8.7210972/4 as B_e↑1.     

Spotting glueballs in collinear gluon jets

We suggest looking for pure gluon hadronic states (glueballs) in ?→ 3g → low spherically final state (collinear gluon jets). In these events one gluon has the maximum energy, $\text{M?}\text{2}$, favouring fragmentation into a glueball. The signature for a true C = G + glueball is its prominence at the ? resonance in e⁺e^? →? → (glueball → four charged pions) + … and its absence in q$\text{q}$ jets off (we do not expect significant quark fragmentation into glueballs).     

The elastic behaviour of the ternary zincblende structure semiconductor CuGe2P3

A single crystal has been grown of CuGe₂P₃, a ternary semiconductor with a zincblende structure in which the copper and germanium atoms are randomly distributed on the cation sites. The second order elastic constants measured by the ultrasonic pulse echo overlap technique (C₁₁ = 13.66, C₁₂ = 6.17, C₄₄ = 6.66 and bulk modulus B = 8.67 in units of 10¹⁰Nm^?2 at 291 K) are closely similar to those of GaP and conform well to Keyes' correlation for zincblende structure crystals. The hydrostatic pressure derivatives of the second order elastic constants ($\text{?C}{}_{11}\text{?P}\text{= 4.40}$, $\text{?C}{}_{12}\text{?P}\text{= 3.9}$, $\text{?C}{}_{44}\text{?P}\text{= 0.93}$ and $\text{?B}\text{?P}\text{= 4.07}$) and the third order elastic constants (C₁₁₁ = ? 8.45, C₁₁₂ = ? 3.49, C₁₂₃ = ? 1.13, C₁₄₄ = ? 2.82, C₁₅₅ = ? 1.44 and C₄₅₆ = ? 0.69 in units of 10¹¹Nm^?2) also resemble those of GaP: even the anharmonicity of the long wavelength acoustic modes of this ternary semiconductor resembles that of its binary “parent” compound. The positive signs of the hydrostatic pressure derivatives and the negative signs of the third order elastic constants show that the acoustic modes at the long wavelength limit stiffen under pressure, an effect which is quantified here by computation of the mode Grüneisen parameters, which are all positive. The harmonic and anharmonic force constants, obtained in the valence force field model, fit well into the pattern shown by related zincblende structure compounds: the ratio ($\text{β}\text{α}$) for bond bending (β) to stretching (α) force constants is greater than 4:1; the dominating anharmonic force constant is γ: most of the anharmonicity is associated with nearest neighbour atoms. Analysis of the temperature dependence of the elastic constants on the basis of a simple anharmonic model again emphasises the similarity between the elastic behaviour of CuGe₂P₃ and GaP. The thermal expansion of CuGe₂P₃ varies almost linearly with temperature between 291 K and 1000 K, the linear coefficient of thermal expansion α being 8.21 ± 0.02 × 10^?6 °C^?1. The similar lattice parameters and elastic behaviour of CuGe₂P₃ and GaP indicate that semiconducting devices made of epitaxial deposits of CuGe₂P₃ on a GaP substrate should prove to be almost strain-free.     

Electron-hole interaction in the presence of excitons

We calculate the effective electron-hole interaction V_re in the presence of an exciton gas, which reads in real space:

$\text{V}{}_{\mathrm{re}}\text{(r)=}\text{?e}{}^2\text{r}\text{{1+}\text{∑}\text{i=1}\text{4}\text{(?1)}{}^{\mathrm{i}}\text{C}{}_{\mathrm{i}}\text{exp}\text{(?Z}{}_{\mathrm{i}}\text{r}\text{a}\text{}}$

The parameters C_i and Z_i are given explicitly for GaAs. For this material, we show the binding energy of the exciton is weakly modified so long as $\text{8πR}{}_0\text{?}{}_{\mathrm{ex}}\text{a}{}_0{}^3\text{kT?1}$. (R₀, exciton Rydberg, a₀ exciyon radius, ?_ex exciton density, T temperature).     

The D′ → A′ transition in Br2

A vibrational and rotational analysis is presented for the D′ → A′ transition (2800–2950 Å) of Br₂. The analysis includes 11 rotationally analyzed bands for ⁷⁹Br₂ and 3 for ⁸¹Br₂, plus bandheads for 70 additional v′-v″ bands of ⁷⁹Br₂, ⁸¹Br₂, and ⁷⁹Br⁸¹Br. The latter include some violet-degraded and spikelike features at the long-wavelength end of the spectrum, which are interpreted and assigned with the aid of band profile simulations. The assigned features are fitted directly to 14 vibrational and rotational expansion parameters for the two electronic states, from which the following spectroscopic constants are obtained: ΔT_e = 35706 cm^?1, ω′_e = 150.86 cm^?1, ω″_e = 165.2 cm^?1, B′_e = 0.042515 cm^?1, B″_e = 0.05944 cm^?1, $\text{R′}{}_{\mathrm{e}}\text{= 3.170}\text{A}\text{?}$, $\text{R″}{}_{\mathrm{e}}\text{= 2.681}\text{A}\text{?}$. The spectroscopic parameters are used to calculate RKR potentials and Franck-Condon factors for the transition.     

Analysis of the 2770-Å emission system in I2

A weak emission spectrum of I₂ near 2770 Å is reanalyzed and found to to minate on the A(1u³Π) state. The assigned bands span v″ levels 5–19 and v′ levels 0–8. The new assignment is corroborated by isotope shifts, band profile simulations, and Franck-Condon calculations. The excited state is an ion-pair state, probably the 1g state which tends toward $\text{I}{}^{\mathrm{?}}\text{(}{}^1\text{S) +}\text{I}{}^{\mathrm{+}}\text{(}{}^3\text{P}{}_1\text{)}$. In combination with other results for the A state, the analysis yields the following spectroscopic constants: T″_e = 10 907 cm^?1, $\text{D}$″_e = 1640 cm^?1, ω″_e = 95 cm^?1, $\text{R″}{}_{\mathrm{e}}\text{= 3.06}\text{A}\text{?}$; T′_e = 47 559.1 cm^?1, ω′_e = 106.60 cm^?1, $\text{R′}{}_{\mathrm{e}}\text{= 3.53}\text{A}\text{?}$.     

Exciton-exciton elastic scattering cross sections for different semiconductors

The exciton-exciton elastic scattering cross sections for the different semiconductors ZnO, CdS, CdSe and Si have been calculated in the central field approximation with and without the symmetry effect in the collision of the two identical excitons. The calculations are carried out as function of the different available values of $\text{σ =}\text{m}{}_{\mathrm{e}}{}^1\text{m}{}_{\mathrm{h}}{}^1$, where m¹_e, and m¹_h are, respectively, the electron and t semiconductors.     

A study of the rotational side-bands in 162Dy

Rotational side-bands in ¹⁶²Dy have been studied using the ¹⁶⁰Gd(α, 2nγ)¹⁶²Dy reaction. Seven side-bands are observed, with K^π = 2⁺, 2^?, (0)^?, 0⁺, 5^?, 4⁺ and (6^?). Four of these bands have collective structure at low spin: the K^π = 2⁺γ-vibrational band, the K^π = 0⁺β-vibrational band, and the K^π = 2^? and (0)^? octupole vibrational bands. Of the remaining bands, the 4⁺ band is deformation coupled while the 5^? and (6^?) bands are rotation-aligned. Several bandcrossings are observed in this nucleus. The β and γ-bands are crossed at $\text{I = 6}\text{h}\text{?}\text{and}\text{12}\text{h}\text{?}$, respectively, by a highly aligned ($\text{i}{}_{\mathrm{<mtext>13</mtext><mtext>2</mtext>}}$)² S-band; extrapolation of this S-band to higher spin suggests that it crosses the g.s.b. between $\text{I = 18}\text{h}\text{?}\text{and}\text{20}\text{h}\text{?}$. The 2^? octupole band is crossed by the 5^? band at $\text{I = 9}\text{h}\text{?}$ and again by the (6^?) band at $\text{I = 12}\text{h}\text{?}$. The latter bandcrossings are discussed in terms of two-quasiparticle plus rotor calculations.     

First determination of the proton electromagnetic form factors at the threshold of the time-like region

From the measurement of $\text{B}\text{e}{}^{\mathrm{+}}\text{e}{}^{\mathrm{?}}\text{=}\text{Γ(}\text{p}\text{p}\text{→}\text{e}{}^{\mathrm{+}}\text{e}{}^{\mathrm{?}}\text{)}\text{Γ}\text{p}\text{p}\text{→total}\text{= (3.2 ± 10}{}^{\mathrm{?7}}\text{)}$, obtained in an experiment at CERN with antiprotons at rest, a value of the proton electromagnetic form factors at the threshold of the time-like region is derived: |G_E| = |G_M| = 0.51 ± 0.08 at q² = -3.52 (GeV/c)².     

Conductivity of a quasi-one-dimensional metal at finite temperatures

The longitudinal conductivity of a quasi-one-dimensional metal is calculated for the case T?ω_D (ω_D being the limiting phonon frequency) and ω_Dl¹/v?1 where l¹ is the effective mean free path determined by impurity and phonon scattering: $\text{l}{}^1\text{= (l}{}^{\mathrm{?1}}{}_{\mathrm{ph}}\text{+ l}{}^{\mathrm{?1}}{}_{\mathrm{i}}\text{)}{}^{\mathrm{?1}}\text{, l}{}_{\mathrm{ph}}\text{= v/λT, l}{}_{\mathrm{i}}$ is the impurity mean free path. The conductivity is σ = (c₁e²/πS)l³_iv^?2ω_DλT for l_i?l_ph, σ = (c₂e²/πS)vω_D(λT)^?2 for l_i?l_ph, λ being the dimensionless electron-phonon interaction constant, c₁, c₂ ～ 1, S = a_xa_y is the (xy) area per one chain.     

The hopping motion of the self-trapped exciton in NaCl

The decay kinetics and the yield of the π luminescence from the lowest triplet state of the self-trapped exciton have been studied in NaCl containing Li⁺ ions. It is found that the π luminescence band which is observed at 6K is replaced by a luminescence band peaked at 3.34 eV above 77K. The 3.34 eV luminescence band is ascribed to the recombination of the relaxed exciton trapped by a Li⁺ ion, (V_ke)_Li. The decay of the π luminescence induced by an electron pulse and the time change of the luminescence from (V_ke)_Li are explained in terms of the characteristic equation of the diffusion-limited reaction of the lowest triplet self-trapped excitons with the Li⁺ ions. From the analysis of the dependence of the decay rate of the π luminescence on temperature and on the Li⁺ concentration, we found the diffusion constant D of the lowest triplet self-trapped exciton in NaCl to be given by with $\text{D}{}_0\text{= 2.13 × 10}{}^{\mathrm{?3}}\text{cm}{}^2\text{s}$ and E₀ = 0.13 eV. The present result can be regarded as the first clear experimental evidence for the hopping diffusion of the self-trapped exciton in alkali halides. The obtained values of E_a and D₀ are discussed using the small polaron theory. The effect of the anharmonicity on the hopping of the self-trapped excitons is suggested to be significant.     

Optical absorption by neutral bound excitons

In this note we determine the oscillator strengths for the dipole absorption of neutral bound excitons in direct gap semiconductors, using our previously obtained 35-term Page and Fraser type wave function, and taking into account the detailed electronic structure as well as the electron-hole exchange interaction.The envelope part of the oscillator strengths varies considerably with the electron-hole mass ratio $\text{σ =}\text{m}{}^1{}_{\mathrm{e}}\text{m}{}^1{}_{\mathrm{h}}$, and is maximum for the (D⁰, X)- complex when σ = 0.4. For typical σ-values (σ? 0.1–0.2), . But when σ approaches zero, the overlapping of the electron and the hole envelope wave functions of the (A⁰,X)-complex decreases progressively so that the oscillator strength also decreases and tends to zero.In the case of zinc-blende materials (T_d) and positive spin-orbit coupling at $\text{k}\text{= 0}$, we confirm that the line strength for transitions to or from $\text{J =}\text{1}\text{2}\text{(Γ}{}_6\text{)}$ or $\text{J =}\text{5}\text{2}\text{(Γ}{}_7\text{+ Γ}{}_8\text{)}$ level of the (A⁰, X)-complex is equal to one quarter of the line strength to or from the $\text{J =}\text{3}\text{2}\text{(Γ}{}_8\text{)}$ level.In the case of CdS, where our computed values are only in qualitative agreement with the experimental values, we discuss the use of the phenomenological result of Rashba.     

Ambipolar drift and breakdown of oscillistor effect in strong magnetic fields

The drift mechanism of helical instability suppression (oscillistor) in electron-hole plasma Ge was, for the first time, investigated. It was found that in strong magnetic fields ($\text{γ}{}_{\mathrm{i=e,h}}\text{= μ}{}_{\mathrm{i}}\text{H/c}\text{a}\text{?}\text{1}$) due to anisotropy of mobility (μ_i ≠ μ_i⊥) the ambipolar drift of helical disturbances of density along the electric field occurs even in quasineutral plasma (n = p), provided μ_e ≠ μ_h. To corroborate the drift mechanism of oscillistor effect breakdown in strong fields the experiments were carried out under the conditions of uniaxial crystal deformation oriented towards 〈111〉 (H, E  〈111〉) resulting in the intervalley redistribution of electrons and additional anisotropy of mobility. Variation in the ambipolar drift velocity connected with the deformation influences essentially the conditions of the helical instability breakdown in strong fields.     

The D′ → A′ transition in I2

A detailed vibrational analysis is given for the D′(2g) → A′(2u³Π) transition (3300–3460 Å) in I₂. The assignments include ～ 150 v′-v″ bands in ¹²⁷I₂ and ～100 in ¹²⁹I₂, spanning v′ levels 0–15 and v″ levels 4–30. These bands are mainly red-degraded but include some violet-degraded and line-like features. The analysis is corroborated by Franck-Condon and band profile calculations. The least-squares fit yields the following constants (cm^?1); ΔT_c = 30 340.8, ω′_e = 103.95, ω_eχ′_e = 0.206, ω″_e = 106.1, ω_eχ″_e = 0.81. Anomalous behavior in the vibrational level structure above v″ = 23 makes the extrapolation to the A′ dissociation limit uncertain, so the absolute energies of both states remain ill-defined. However there is a possibility that the D′ state is the state labeled α by King et al. [Chem. Phys. 56, 145–156 (1981)], in which case the energies are known precisely. There is evidence of weak emission from at least two other electronic transitions in this spectral region, probably $\text{D(0}{}^{\mathrm{+}}\text{u) → X(}{}^1\text{Σ}{}_{\mathrm{g}}{}^{\mathrm{+}}\text{)}$ ($\text{λ}\text{< 3300}\text{A}\text{?}$) and β → A(1u³Π) ($\text{λ}\text{> 3300}\text{A}\text{?}$).