飞秒激光烧蚀硅表面产生等离子体的发射光谱研究

对中心波长为800 nm,脉宽为100 fs的激光脉冲烧蚀空气中硅(111)产生的等离子体发射光谱进行了时间和空间分辨研究. 结果表明,在等离子体羽膨胀初期(小于50 ns时间范围内),等离子体发射光谱主要由连续光谱构成,此后连续光谱强度逐渐减弱,线状光谱开始占主导地位;在羽体膨胀过程中离子谱线的存在时间短于原子谱线的存在时间. 由时间分辨发射光谱发现在羽体膨胀过程中等离子体辐射波长存在红移现象,波长红移量随时间演化呈二次指数衰减. 最后给出等离子体发射光谱谱线强度的时空演化规律. 关键词： 飞秒激光 脉冲激光烧蚀 等离子体 发射光谱     

Optical analysis method for fast plasma characterization of high-speed miniaturized synthetic jet

In this paper, a new optical analysis method for plasma characterization is proposed. Plasma characteristics are obtained directly by measuring the plasma luminous color, rather than the complex spectral diagnosis method, which is difficult to obtain at high speed. By using the light transmittance curve of the human cornea, the RGB coordinates are calculated from the measured plasma spectrum data. Plasma characteristics are diagnosed using the Boltzmann plot method and the Stark broadening metho...     

Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

The temperature dependent electrical transport behavior of n–n InGaN/Si heterostructures grown by plasma-assisted MBE was studied. Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using standard Vegard's law. Current density–voltage plots (J–V–T) revealed that the ideality factor (η) and Schottky barrier height (SBH) (Φ_b) are temperature dependent and the incorrect values of the Richardson's constant (A⁷) produced, suggests an inhomogeneous barrier at the heterostructure interface. The higher value of the ideality factor compared to the ideal value and its temperature dependence suggest that the current transport is mainly dominated by thermionic field emission.     

Optical and transport studies in coupled InAs quantum dots embedded in GaAs

We studied optical and electron transport properties of coupled InAs quantum dots (QDs) embedded in GaAs. Photoluminescence (PL) from the high dot density samples indicated asymmetry in the PL spectra when the ambient temperature is lower than about 50 K. Comparing this result with theoretical calculations, it is shown that this phenomenon is explained by the inter-dot electronic coupling effect. In the photo-conductance measurement, resonance peaks in the current–voltage characteristics were observed in the low-temperature region. The dependence of the resonance voltage on the magnetic field intensity was studied to extract the g-factor. It is also shown that the resonances are attributed to the current corresponding to the electron transport through QDs. According to these results, it is concluded that the inter-dot electronic coupling in the self-assembled InAs/GaAs QD systems occurs when the inter-dot spacing is as low as several nanometers and the ambient temperature is less than about 50 K.     

Optical emission studies of sulphur plasma using laser induced breakdown spectroscopy

We present the optical emission studies of sulphur (S) plasma generated by the first (1064 nm) and second (532 nm) wavelengths of a Q-switched Nd:YAG laser. The target material was placed in front of laser beam in air at atmospheric pressure. The experimentally observed line profiles of neutral sulphur have been used to extract the electron temperature (T _e ) using the Boltzmann plot method, whereas the electron number density (N _e ) has been determined from the Stark broadening. The electron temperature is calculated by varying, distance from, the target surface along the line of propagation of plasma plume and also by varying the laser irradiance. Beside we have studied the variation of number density as a function of laser irradiance as well as its variation with distance from the target surface. It is observed that electron temperature and electron number density increases as laser irradiance is increased.     

Optical emission from excess Si defect centers in Si nanostructures

Four groups of Si nanostructures with and without beta-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.     

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT?=?0.2 and 1.4 at T?=?300?and 900?K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.     

Simulation of fast electron transport in silicon

A model for estimating the number of electrons produced as a result of the fast-ion-surface interaction is proposed. The dependence of the number of electrons emitted by the surface in collisions between fast protons and silicon as a function of the angle of incidence and as a function of the layer depth where the electron was produced is analyzed.     

Paramagnetic defects in BaTiO3 and their role in light-induced charge transport — Optical studies

On the basis of a previous identification of paramagnetic defects in nominally undoped as grown BaTiO₃ single crystals, we have investigated the changes of the concentrations of these centers and their optical absorptions under illumination with light of varying wavelengths. The most pronounced charge transfers occur by hole ionization of Fe⁴⁺ and — to a lesser extent — of Cr⁵⁺ and Cr⁴⁺. At low temperatures the created holes are trapped in the form of O^–-ions next to Al³⁺ or unknown acceptor defects. Corresponding Fe⁴⁺ and O^– absorptions have been identified.     

Optical gap of P-doped Si nanocrystals

The optical gap of Si nanocrystals strongly doped with phosphorus has been calculated. The energy levels of the electron and hole ground states in the Si nanocrystal were found as functions of the nanocrystal size and the P concentration in the framework of the envelope function approximation and under the assumption of uniform impurity distribution over the nanocrystal volume. It is shown that introducing phosphorus into the nanocrystal leads to a decrease in its optical gap. This decrease is related to a strong shift of the ground electron level produced by the short-range part of the Coulomb electron-P-ion interaction.     

Optical band gap of Si nanoclusters

We discuss the nature of the optical transitions in porous silicon and in Si nanoclusters in the light of recent theoretical calculations. The accuracy of the different techniques used to calculate the band gap of Si nanoclusters is analyzed. We calculate the electronic structure of crystallites in the Si-III (BC8) crystalline phase which is known to have a direct gap and we examine the effect of quantum confinement on clusters of SiGe alloy and amorphous silicon. The comparison with the experiments for all the systems suggests the possibility of different channels for the radiative recombination.     

Optical spectroscopic studies of titanium plasma produced by an Nd : YAG laser

We present optical emission characteristics of the titanium plasma produced by the fundamental (1064 nm) and second (532 nm) harmonics of a Q-switched Nd: YAG laser using laser induced breakdown spectroscopy (LIBS). The experimentally observed line profiles of neutral titanium (Ti I) have been used to extract the electron temperature (T _e ) using the Boltzmann plot method. The electron number density (N _e ) is calculated using the Stark broadening profile of 368.73 nm spectral line. Beside we have studied the spatial variation of electron temperature and number density as a function of laser energy for titanium plasma by placing the target material in air (at atmospheric pressure). We have determined the electron temperature and the electron number density along the axial position of the plasma plume.     

Optical properties of laser-induced heavily doped Si

An analysis of recently reported experimental studies⁽¹⁾ of the optical properties of laser-induced heavily doped Si layers is presented here. The analysis has been made on the basis of models like those of Penn⁽²⁾ and Breckenridge et al.⁽³⁾ Our calculations show that, in general, N_eff, the effective number of electrons contributing to optically induced electronic transitions, increases as does ε₂(E), the imaginary part of the complex dielectric constant. This reflects an increased absorption coefficient for these As-doped samples. These studies have been carried out on samples of Si heavily doped by ion-implantation followed by a laser-annealing process. The conclusions based on these studies are seen to be in accord with those of Aspnes et al.⁽⁴⁾ and Vina and Cardona.⁽⁵⁾     

Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure

The effect of pressure on the electrical resistivity of bulk Si₂₀Te₈₀ glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si₂₀Te₈₀ glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si₂₀Te₈₀ glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double T_g effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.     

Optical emission spectroscopic studies on laser ablated TiO2 plasma

Optical emission spectroscopic investigations of the plasma produced during Nd:YAG laser ablation of sintered TiO₂ targets, in oxygen and argon gas environments are reported. The spatial variations of electron temperature (T_e) and electron number density (N_e) are studied. The effect of oxygen/argon pressure on electron temperature (T_e) and electron number density (N_e) is presented. The kinematics of the emitted particles and expansion of plume edge are discussed. Spatio-temporal variations of various species in TiO₂ plasma were recorded and corresponding velocities were calculated. The effect of oxygen pressure on intensity of neutral/ion species and their corresponding velocities is also reported.