Low energy electron attenuation length studies in thin amorphous carbon films

The results of experiments on low energy electrons passing through thin amorphous carbon films are reported. For electron energies between 50 and 3000 eV, electron attenuation lengths were determined by electron transmission measurements through carbon films of thicknesses between 81 and 210 Å. The density of these amorphous carbon films was also obtained by a sink—float method and found to be 1.90 ± 0.05 g cm^?3. The electron attenuation length for inelastic scattering was found to increase monotonically from approximately 10 to 55 Å over the 50 to 3000 eV range. Over the 500–3000 eV energy region, the results are in good agreement with mean free paths calculated using optically measured dielectric functions.     

Photoelectron mean free paths in barium stearate layers

Barium stearate monolayers were deposited on polished clean germanium and copper substrates using the Blodget technique. Film thicknesses were determined by ellipsometry by assuming the films were optically isotropic with a refractive index of 1.5 and an absorption coefficient of zero. X-ray photoelectron spectroscopy intensity ratios, obtained at 223 K to minimize vaporization, were used to determine electron inelastic mean free paths (IMFP) in the barium stearate layers. The substrate photoelectron lines cover a binding energy range of 1200 eV. IMFP values range from approximately 27 ± 5 Å at about 230 eV to 65 ± 12 Å at about 1480 eV kinetic energy. The approximately linear shape of this function, together with the throughput function of the instrument, suggests that over the binding energy range of 0–600 eV, the photoelectron mean free paths and throughput effects in the Hewlett-Packard instrument approximately cancel.     

Ab initio all-electron fully relativistic Dirac—Fock self-consistent field calculations for UCI6

Ab initio all-electron fully relativistic Dirac-Fock and non-relativistic Hartree-Fock self-consistent field (SCF) calculations are reported at four UCl bond distances, assuming octahedral UCl₆. The results are fitted to a polynomial, obtaining thereby the optimized values of the bond distance and the corresponding total electronic energy for the UCl₆. The nonrelativistic Hartree-Fock (HF) and Dirac-Fock (DF) SCF calculations predict UCl₆ to be bound, with a predicted dissociation (atomization) energy D _e of 11.88 eV and 17.89 eV, respectively. Relativistic effects lead to ~51% increment in the predicted atomization energy of UCl₆. The UCl bond lengths predicted for UCl₆ with the relativistic DF and non-relativistic HF wave-functions are 2.46 Å and 2.58 Å, respectively. Complete neglect in the SCF step of the two-electron [SS|SS] integrals involving the small components of the spinors (NOSS) in the DF SCF calculation for UCl₆ predicts a D _e of 18.25 eV and essentially the same bond length (2.48 Å) as that predicted with the full SCF procedure. Thus the small components contribute an antibinding relativistic effect of ~0.4 eV to the D _e of UCl₆ and have a negligible effect on the bond length. The calculations show that relativistic effects are significant for the bonding and the dissociation (atomization) energy of UCl₆, and that these may be treated accurately using Dirac's fully relativistic equation for an electron.     

An Auger and X-ray photoelectron spectroscopic study of sodium metal and sodium oxide

Photoelectron and Auger electron measurements have been made on polycrystalline films of sodium metal evaporated in ultra high vacuum, and on Na₂O produced by in-situ oxidation by dry oxygen. Most of the spectra were recorded using Mg Kα (1254 eV) radiation but excitation by 5 keV electrons or monochromatized Al Kα (1487 eV) X-rays was used for specific purposes. Core and valence electron binding energies, photoionization cross-sections relative to Na 1s, KLL and KLV Auger energies and transition probabilities are reported. Energy losses in the metal and oxide are discussed and the relative intensities of surface and bulk plasmon losses have been used to calculate mean electron escape depths in the metal. When corrections were made for experimental geometry, escape depths of 10 Å at 180 eV and 31 Å at 1200 eV were obtained. An escape depth of 23 Å at 980 eV was obtained by Na 1s-Na K-Auger intensity correlation and this is consistent with the plasmon data. Data on Auger satellite lines are presented and, in particular, evidence has been obtained which indicates that a high energy satellite should not be attributed to a plasmon gain mechanism. Valence band influences on the KLV Auger spectra are discussed with reference to the XPS spectrum and other sources of valence band information. Unexpected structure was found in the KLV spectra of the metal which, pending thorough interpretation, offsets the sensitivity and resolution advantages which these spectra otherwise offer for valence band studies.     

The spectrum of SiO in the vacuum ultraviolet region

The absorption spectrum of SiO has been photographed at high resolution in the region 1200–1500 Å. Several new electronic states have been observed, valence states as well as Rydberg states. Tables of the molecular constants of all the known states of SiO are given. Due to interactions between the electronic states, the constants of all states analyzed vary irregularly. From the Rydberg series a value of the ionization potential has been derived. It agrees with the value earlier reported, 11.6 ± 0.2 eV.     

Decay times of the intrinsic luminescence band (1750 Å) of solid Xe

Thin films of solid xenon have been excited by a pulsed electron beam with electron energies of 300 eV and pulse lengths down to 5 nsec at low current. For the main luminescence band of solid xenon (λ ≈ 1750 Å) two decay times have been observed. The short decay time (3 ± 1 nsec) is independent of temperature between 4 K and 30 K, whereas the long decay time decreases from 900 ± 50 nsec at 4 K to 150 ± 50 nsec at 30 K.     

The Absorption Spectrum of UF6, from 2000 to 4200 Å

The absorption spectrum of UF₆ between 3400 and 4200 Å, is well-documented,^(1–3) but the region below 3400 Å has not been studied in any detail. We present here a spectrum of UF₆ between 2000 and 4200 Å that shows significant structure below 3400 Å. The absorption in this region must be observed at very low pressures and relatively short path lengths.     

碳硅二炔结构及性质分子动力学模拟研究

采用基于量子力学的半经验哈密顿量的计算方法,即SCED-LCAO方法,模拟研究了碳硅二炔的稳定性结构、成键特点、电子结构等性质. 得出其最稳定的结构是单层平面结构,晶格常数为12.251 Å. 它通过 含有两个Si-C三键的链连接六元环构成. 这种平面结构在很大高温范围内都可以保持其稳定特性,直到1520 K时,该基本结构才被破坏,且结构中出现四元环. 体系温度低于1520 K时,均可通过降温,恢复其零温时的结构. 研究还发现这种共轭结构中Si,C 原子间存在稳定的sp杂化形式,对分布函数得出其键长为1.58 Å左右. 高温时sp杂化逐渐转变成其他杂化形式. 计算结果表明,在零温下,该电中性系统中存在离域π键,使得系统中的Si-C键长呈现平均化趋势. 研究表明,碳硅二炔的能隙为1.416 eV,LUMO,HOMO能级分别是0.386 eV和–1.03 eV表明了其n型半导体特性. 关键词： 碳硅二炔 分子动力学模拟 sp杂化 稳定性     

Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method

Full-scale atomistic simulations by the nudged elastic band method are performed to determine the energetics and core structures of dislocations in a Ni lattice using an embedded-atom method potential. We find that for an edge dislocation, the potential yields very weak coupling between the partials which move almost individually. For a screw dislocation, the coupling between the partials is somewhat stronger and the partials move with some dependence. As expected, the results indicate that stacking fault energy has a controlling influence on the coupling behaviour of the partials. The effective Peierls energies and stresses are 1.30?×?10^?6?eV/Å and 2.79?×?10^?6?μ for the edge dislocation, and 1.62?×?10^?4?eV/Å and 2.02?×?10^?4?μ for the screw dislocation.     

Temperature dependence of the carbon dioxide photoabsorption cross section between 1200 and 1970 Å

Photoabsorption cross sections have been measured for carbon dioxide at 0.5Å intervals between 1200 and 1970Å. The instrumental resolution was about 0.05Å and measurements were performed using relatively low pressures at temperatures near 200, 300, and 370 K. The room temperature cross sections are found to be in good agreement with previous measurements and a temperature effect is found which is small at the shorter wavelengths, passing through a minimum near 1400Å. At longer wavelengths the temperature effect increases steadily until at some fixed wavelengths above 1900 A the cross section increases by a factor of about 20 as the temperature is increased from 200 to 370 K. This behaviour is of particular significance to calculations of carbon dioxide photodissociation rates at low altitudes in the Martian atmosphere.     

Photoconductivity of potassium colloids in KCl single crystals

Detailed photoconductivity spectra of potassium colloids in KCl single crystals are presented. A broad band peaked at ～2 eV, together with a small shoulder at ～1.3 eV are observed for crystals containing colloids with radii in the 20–500 Å range.The spectrum shape is essentially independent of temperature and colloid radius. On the other hand, the maximum photoconductivity yield depends on the colloid radius reaching a maximum value at about 60 Å.     

Giant Rashba spin splitting in Bi2Se3:Tl

First‐principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi₂Se₃:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of α_R = 1.57 eV Å at the bottom of the conduction band (electrons) and α_R = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to α_R = 1.83 eV Å and α_R = 3.64 eV Å, respectively, by 2% tensile strain. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Pressure dependence of orthopositronium lifetime and bubble parameters in liquid helium

Orthopositronium lifetime in liquid He-4 at 4.2 K is found to decrease from 100 nsec to 50 nsec under pressures 1–60 atm. The radius and potential well-depth of the positronium bubble are estimated to vary from 14 Å to 7 Å and from 0.25 eV to 0.55 eV.     

On the crystallography of the TTF-TCNQ salt at reduced temperatures

A structure determination of the one-dimensionally conducting salt tetrathiofulvalinium-tetracyanoquinodimethanide (TTF-TCNQ) at 100°K, and additional measurements at lower temperatures, show that no major change in crystal structure occurs between room temperature and 40°K. At 100°K the interplanar spacings are reduced from 3.47 to 3.43 and from 3.17 to 3.11 Å for the TTF and TCNQ stacks, respectively. The bond lengths at 100°K agree better with the values listed for salts of TCNQ^-0.5, than with those for TCNQ^-1. On cooling a broadening of the b1 axis reflections is observed, which would be compatible with one-dimensional distortions of the crystal lattice.     

ΔT-window neutron spectrometer

A high resolution neutron spectrometer making use of a ΔT-window filter for the analyser and time-of-flight technique for analysing incident neutron energy has been designed. The spectrometer will provide a continuously variable energy resolution ΔE from 40–50μeV at ∼ 5230μeV. The range of energy transfer allowed is −1450μeV to +2950μeV and the range of wavevector transferQ allowed is 0·82–3·06 ?⁻¹. Depending on the resolution used, the counting rates are expected to vary from 28–60 × 10³ counts/hr if one assumes 10% isotropic elastic scattering from the sample.     

Optische Messung der Elektronenstoß-Anregung von Xenon und molekularem Stickstoff im Schwellenbereich mit hoher Energieauflösung

Relative optical excitation functions of Xe and N₂ have been measured in the threshold region. The inciting electron beam had a FWHM of 50 meV. The threshold behaviour of the excitation functions ofp-levels of Xenon is strongly influenced by resonances. The onset is step-like, in some cases resonance structure is to be seen just above threshold. In some excitation functions resonance structure is found immediatly above the ionization limit. This is believed to be caused by two compound states the parent states of which could be the 6d′ and the 8s′ autoionizing state of Xenon. In nitrogen, the excitation functions of two bands of the second positive group have been measured (3371 and 3755 Å), the upper levels of which are thev=0 and thev=1 levels of theC ³Π _u state. The excitation raises linear from threshold. In the 3371 Å excitation function a resonance maximum at 11.50 eV is observed, where the cross section is increased due to resonance population by about 100%, as measured with a FWHM of 50meV of the electron beam. The broad absolute maximums of the excitation functions are found to lie at 14.0±0.1 eV in the case of the 3371 Å- and at 14.3±0.1 eV in the 3755 Å-band.     

Change of phonon dispersion curves due to interstitials in Al

An experimental investigation of the profiles of the 4471 Å and 4922 Å lines in the afterglow of an high density plasma of helium produced by laser is reported. The measured profiles of these two neutral helium lines and their forbidden components are given at electron densities between 5 · 10¹⁶ cm^?3 and 2 · 10¹⁷ cm^?3 and for electron temperature between 3 and 4 eV.     

Elastische Streuung langsamer Elektronen an einem Bi-Atomstrahl

The angular distribution of electrons elastically scattered by bismuth atoms has been investigated in the angular range from 30 to 155° and with electron energies between 5 and 1200 eV. Theoretical data, which are available for energies above 100 eV, are in good agreement with experiment.     

Observation of interface plasmon excitation in photoemission spectroscopy from the heterostructures Cu/RbF/GaAs(100) and Cu/RbF/Ge(100)

Synchrotron radiation photoelectron spectra taken at 100 eV photon energy have been measured to characterize the interface reactions of the metal-insulator-semiconductor systems Cu/RbF/GaAs(100) and Cu/RbF/Ge(100). In comparision, similar sequences are studied on the Cu/GaAs(100) and Cu/Ge(100) interfaces without the RbF interlayer. After Cu-deposition of 1–4 Å on RbF-covered (10–14 Å) GaAs and Ge surfaces, shoulder peaks appear on both the Ga 3d and Ge 3d core levels. The shoulder peaks are shifted 1.1 and 1.4 eV to higher binding energy for the Ga 3d and Ge 3d levels, respectively. The Rb 4p and F 2p peak positions are slightly shifted between 0.25 and 0.5 eV. The broad second Ga 3d and Ge 3d peaks can be correlated to plasmon loss of electrons from these levels in a two-dimensional Rb metal-like layer formed at the Cu/RbF interface. The excitation energy of a Rb surface plasmon in a Cu-Rb-RbF system is calculated to be 1.3 eV.     

Relative escape depth of Auger and photoelectrons from a solid surface

A new method of determining the escape depth of electrons in the energy range 0–1000 eV is described. Values obtained were 6.1 Å and 6.8 Å at 234 and 266 eV, respectively, in GeO₂.