Comparison of light rare earths N4,5-level soft X-ray and auger electron appearance-potential spectra

Appearance-potential Spectroscopy (APS) probes the binding energy of core levels and local conduction band states of atoms in the surface region. Soft X-ray APS (SXAPS) and Auger electron APS (AEAPS), respectively, measure the differential X-ray fluorescence and secondary electron yields as a function of incident electron energy. We have obtained the N_4,5-level SXAPS and AEAPS spectra of La, Ce, Pr, Nd and Sm metals. Both spectra exhibit multiplet structure below the expected 4d excitation threshold and a broad, 10–20 eV wide peak above the threshold followed by small peaks of decreasing intensity. The data are used to gain an understanding of the decay mechanism following the excitation of the core levels in these spectroscopies. The strong similarity observed between the SXAPS and AEAPS indicates that the characteristic emission and not the bremsstrahlung dominates the spectral lineshape in APS.     

Electron energy loss spectroscopy study of the initial stage of lanthanum oxidation

The electron energy loss spectra (EELS) of a pure metallic lanthanum surface and variations in these spectra at the initial stages of surface oxidation were studied. The measurements were performed at primary-electron beam energies E _p from 200 to 1000 eV. A very pronounced peak at a loss energy of about 7.5 eV arises due to transitions from the La4d electronic states of the valence band into the empty La4f electronic states of the conduction band at 5.0–5.5 eV above the Fermi level. Marked changes are observed in the EELS during the oxidation of lanthanum: the peak at an energy of 7.5 eV disappears, and the peak at 13.5 eV corresponding to bulk collective energy loss in lanthanum oxide becomes more pronounced. The results obtained are discussed in terms of the electronic structure of lanthanum and lanthanum oxide.     

Electronic properties of the NiO(100) surface after thermal cleaning in ultrahigh vacuum

Photoemission yield spectroscopy (PYS) together with Auger electron spectroscopy (AES) have been used in an investigation of the electronic properties of the NiO(100) surface, thermally cleaned in ultrahigh vacuum (UHV). The work function and ionization energy were determined. The origin of the filled electronic states band localized below the Fermi level, E_F, is briefly discussed.     

Many-body effects in l2mm auger electron spectra of Ge(CH3)4 excited by Mg Kα X-rays

The Ge:L₂MM Auger electron spectra excited by Mg Kα X-rays from Ge(CH₃)₄ free molecules have been compared with the corresponding spectra excited by Al Kα X-rays. The Al Kα excited spectra have characteristic features of the diagram Auger transitions, because the excitation energy is far above the L₂ ionization threshold. The energy of Mg Kα photons is 1.21 eV below the Ge:L₂ ionization threshold and thus the Mg Kα excited L₂MM Auger electron spectra indicate many-body effects, post collision interaction (PCI) effects and spectator Auger satellite structures. The L₂M_4,5M_4,5 type spectrum displays both these features but the L₂M_2,3M_4,5 type spectrum has only a spectator Auger satellite structure, because the (3p⁻¹3d⁻¹nl) final state interferes with the (3s) hole state.     

ESCA studies of Cu,Cu2O and CuO

Cu 2p, Cu 3d and O 1s electron spectra and Cu L₃M_4,5M_4,5 Auger electron spectra from Cu, Cu₂O and CuO have been studied at 25°C and at 400°C. The height of the Cu 2p satellite peaks from copper oxides was lowered when the temperature was raised. The intensity of the satellites also decreased if the sample stayed in vacuum for prolonged periods.Two commercial cuprous oxides were different with respect to the behaviour of the satellite peaks. One produced very weak satellites, while the other produced strong ones as previously reported in the literature for cuprous oxide. The colour of the oxides was slightly different, indicating that the stoichiometry was not the same.The change in satellite intensity is accompanied by changes in oxygen spectra, Cu L₃M_4,5 M_4,5 Auger spectra and valence band spectra.It is useful to study Auger electrons in addition to the direct electron spectrum, since Auger signals can be more sensitive to surface conditions than direct electron spectra.     

High resolution Auger electron spectroscopy of metallic copper

Part of the LMM Auger spectrum from metallic copper has been studied in a high resolution X-ray photoelectron spectrometer. Fine structure not earlier reported has been observed. The main L₃M_4,5M_4,5 peak is very narrow, 1.0 eV, although the valence band is involved in the transition. The agreement between experimental and calculated Auger electron energies is very good. Since fine structure is found to be an intrinsic property in Auger spectra the interpretation of “satellite” peaks as due to electron—plasmon interactions should be used with care. The L₃M_4,5M_4,5 peak is very sensitive to the copper surface conditions. Surface oxygen affects the peak in a characteristic way.     

Comparison of site-specific valence band densities of states determined from Auger spectra and XPS-determined valence band spectra in GeS (001) and GeSe (001)

Auger lineshapes of the Ge M₁M_4,5V and M₃M_4,5V and Se _M1M_4,5V transitions in GeS (001) and GeSe (001) are measured and compared to XPS valence band spectra. Distortions in both types of spectra due to inelastic scattering, analyzer and source broadening, and core level lifetime broadening are removed by deconvolution techniques. The valence band consists of three main peaks at ?2 eV, ?8 eV, and ?13 eV. There is excellent agreement of peak positions in AES and XPS spectra. The Auger lineshapes can be interpreted in terms of site-specific densities of states. They indicate that the states at ～?8 eV and at ～?13 eV are associated with the cation and anion sites respectively. The bonding p-like states at the top of the valence band have both cation and anion character. The Auger lineshapes indicate that the states closest to the valence band maximum are preferentially associated with Ge.     

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a $\text{3}\text{×}\text{3}$ R30° structure at $\text{1}\text{3}$ ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge E_vs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below E_vs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ～1 ML.     

Electronic structure of PdO studied by photoemission (XPS,UPS)

In this paper we present the results of photoemission studies (XPS and UPS) performed on a polycrystalline surface of PdO. The electron density of states (EDOS) deduced both from XPS and UPS (He_I and He_II) are very similar. The valence band of PdO, which differs significantly from the Pd one, can be built up by four structures located at 0.5 eV, 2.2eV, 4.5 eV and 6.5 eV below E_F. The various electronic contributions (p or d) in the band are considered and, in order to explain our spectra, we discuss several hypothesis taking into account the possible existence of satellite lines or crystal field effects. Our XPS and UPS spectra show that the energy bands of PdO are narrow (～ 2–3 eV), moreover the energy shift of the core levels (|ΔE^F_B| = 2 eV) is important : these results suggest that the correlations between the d electrons may be important in PdO.     

Thermopower of CeNi5 with strong f-electron instability: Band effects

Numerical calculations of the thermopower component S _d that is associated with the fine structure of the density of d states near the Fermi level are carried out for CeNi₅ and its La analog. The estimates, together with earlier experimental data on the transport coefficients in Ce(M _xNi_1?x )₅ solid solutions with M=Ga, Cu (0≤x≤0.4)), are used to analyze the behavior of the thermopower component S _f originating from the Ce valence instability. It is shown that as Ce crosses over from the state of its usual intermediate valence to the saturated-valence state, the feature near the Fermi energy, which represents a Lorentzian-shaped peak of the density of f states, transforms to a double-humped structure. The possibility of formation of a strongly correlated band of f states in Ce(M _xNi_1?x )₅ in the crossover to the Ce saturated-valence state, accompanied by the opening of a quasi-gap Δ ～ 400 K, is discussed.     

Many-electron effect in the Fe L3-M4,5M4,5 Auger electron spectrum of ultrathin Fe films grown on Cu(1 0 0)

D’Addato et al. [S. D’Addato, P. Luches, R. Gotter, L. Floreano, D. Cvetko, A. Morgante, A. Newton, D. Martin, P. Unsworth, P. Weightman, Surf. Rev. Lett. 9 (2002) 709] studied the variation with Fe coverages in the relative Fe L₃-M_4,5M_4,5 Auger electron spectroscopy (AES) spectral satellite intensity of ultrathin Fe films grown on Cu(1 0 0) by sweeping photon excitation energy through the Fe L₂-level ionization threshold. They interpreted that the M_4,5 hole in the L₃M_4,5 double-hole state created by the L₂-L₃M_4,5 Coster–Kronig (CK) decay remains localized for longer than the L₃-hole lifetime for the 0.3 and 10 ML coverages but has a lifetime comparable to the L₃-hole lifetime for the 1 ML coverages. The present many-body theory shows that when the M_4,5 hole created either by the CK decay or by the L₃M_4,5 shakeoff hops away from the ionized atomic site and becomes completely screened out prior to the L₃-hole decay, the Fe L₂-L₃M_4,5-L₃-M_4,5M_4,5 AES main line as well as the Fe L₃ M_4,5 (satellite)-L₃-M_4,5M_4,5 one, both of which are identical in line shape to the Fe L₃-M_4,5M_4,5 one, dominate in the Fe CK preceded AES spectrum. The present analysis shows that the delocalization time of the M_4,5 hole created in the 1 ML Fe/Cu(1 0 0) system by the L₂-L₃M_4,5 CK decay is much shorter than the L₃-hole lifetime so that the Fe L₃-M_4,5M_4,5 AES spectral line shape hardly changes, except for the presence of a very weak spectator L₂-L₃M_4,5-M_4,5M_4,5M_4,5 AES satellite, when the photon excitation energy is swept through the Fe L₂-level ionization threshold. For the 0.3 ML coverages the M_4,5-hole delocalization time is still shorter than the L₃-hole lifetime.     

Solid state effects in the Auger spectrum of zinc and oxidised zinc

Measurements of the zinc L_2,3M_4,5M_4,5 Auger spectra are reported. The line shapes in solid zinc are similar to those in zinc vapour but the Auger energies have increased by about 15 eV and the line breadths have broadened from 0.5 eV to 1.0 eV fwhm. The ratio of the L₂:L₃ groups differ from the vapour suggesting that L₂L₃M_4,5 Coster-Kronig transitions occur in the solid but not in the vapour. Changes in the spectra with oxidation have been observed. The Auger lines broaden on oxidation and a line breadth of 3.2 eV fwhm gives the best fit to the spectrum of almost fully oxidised zinc. The oxide L₃M_4,5M_4,5¹G₄ peak progressively shifts from 2.6 eV to 4.2 eV below the metal peak as the oxide thickness increases, the latter value being close to the measured shift in crystalline zinc oxide. Similar energy variation is reported for solid Argon condensed onto clean silver and the shifts are explained in terms of variation in “extra electron relaxation” with film thickness.     

Fast and efficient VUV/UV emissions from (Ba,La)F2:Er crystals

We report observation of fast and efficient VUV/UV luminescence from the mixed (Ba,La)F₂:Er crystals. The broad bands, peaking at 162.5, 181.9, 194.2, 202.8, 216.1, 233.5 and 281.5 nm and decaying, at 10 and 293 K, with time constants of 46 and 35 ns respectively, are due to spin-allowed transitions from the low-spin (LS) state of the 4f¹⁰5d configuration.We also observed a weak and slow broad band emission peaking at 170 nm due to the spin-forbidden transition from the high-spin (HS) state of the 4f¹⁰5d configuration.While at room temperature the excitation into any of the three identified LS bands (J=8, 7 and 6) dominating the excitation spectrum yields fast VUV and UV emissions, at 10 K the excitation into higher lying J=7 and 6 bands generates slow and sharp line emissions. The positions of these lines fit energies of transitions originating from the ²G_7/2 multiplet at 66140 cm⁻¹. The emission from the ²G_7/2 multiplet has been never, to the best of our knowledge, observed before.The efficient and fast VUV and UV emissions from the higher (LS, J=8) with almost no contribution from the lower (HS, J=8) level of the 4f¹⁰5d configuration are possible because the modified crystal field in (Ba,La)F₂ shifts the level of the (LS, J=8) state below the ²F_5/2 multiplet which, therefore, does not contribute to nonradiative relaxation between the LS and HS levels.We conclude that the ²G_7/2 and ²F_5/2 levels have major impact on VUV and UV emissions from the Er³⁺ ion in (Ba,La)F₂ contributing to complex emission pattern described in this report Their key role, elucidated by the VUV and UV luminescence spectroscopy, is consistent with predictions from a simple configuration coordinate model based on experimental results and calculations of the 4f¹¹ energy levels.     

Surface electronic structure of the organic superconductor κ-(ET)2Cu(NCS)2 studied via photoemission microscopy

The surface electronic structure of cleaved single crystals of the organic superconductor κ-(ET)₂Cu(NCS)₂ has been studied using photoemission microscopy. Two types of cleaved surfaces were observed, displaying different valence band photoemission spectra and different spectral behavior near the Fermi level, E_F. In particular, spectra from one surface type display relatively broad spectral features in the valence band and finite spectral intensity at E_F, while spectra from the other surface type show well-defined valence band emission features and zero photoemission intensity at E_F. We propose that the spectral differences are due to a very short electron mean free path in this material, and our results are used to explain the differences between previously published photoemission spectra from this superconductor. We also report the results of an investigation of the electronic structure of defects in this material.     

Electronic properties of orthorhombic LiGaS<Subscript>2</Subscript> and LiGaSe<Subscript>2</Subscript>

We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS₂ (LGS) and LiGaSe₂ (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) method within a framework of density functional theory. Our calculations show that these crystals have similar band structures. The valence band maximum (VBM) and the conduction band minimum (CBM) are located at Γ, resulting in a direct energy band gap. The VBM is dominated by S/Se-p and Li-p states, while the CBM is dominated by Ga-s, S/Se-p and small contributions of Li-p and Ga-p. From the partial density of states we find that Li-p hybridizes with Li-s below the Fermi energy (E _F), while Li-s/p hybridizes with Ga-p below and above E _F. Also, we note that S/Se-p hybridizes with Ga-s below and above E _F.     

Adsorbate enhanced Ti-3d photoemission from layered TiSe2 surfaces

Angle resolved photoelectron spectra of 1T-TiSe₂ single crystals $\text{(}\text{h}\text{?}\text{ω = 21.2}\text{eV}\text{)}$ have been investigated as a function of exposure to H₂O, CO, N₂ and O₂ at room temperature. A significant enhancement of the Ti-3d emission near the Fermi energy E_F is observed for H₂O and CO exposures of several kL. As compared to the clean surface this emission extends over the entire Brillouin zone. The results indicate that by H₂O and CO adsorption the lowest d-subband is pulled below E_F possibly by local band bending. Additional relaxation effects at the surface associated with changes in d-band matrix elements may occur. The intensity of the Se-4p derived valence band emission down to 7 eV below E_F remains essentially unchanged.     

Structural properties and band structure of heavy fermion systems: CeCu2Si2 and LaCu2Si2

The structure of CeCu₂Si₂, isotypic with ThCr₂Si₂, has been refined in a single-crystal study. The atomic parameters were used in self-consistent LMTO band structure calculations for CeCu₂Si₂ and isostructural LaCu₂Si₂. The results are analysed in terms of energy levels, charge distribution and in particular Fermi surface properties. The Ce-4f levels are situated mainly aboveE _F , except near the Γ-point. The density-of-states atE _F is large and heavily concentrated around the Ce-4f band. This makes local Ce 4f fluctuations possible, while interaction with the rest of the band structure is small. The comparison with LaCu₂Si₂ shows that the additional Cef electron is partly promoted into the non-f bands. Large enhancement factors are required to bring band results into agreement with observed specific heat and magnetic critical field. Strong Fermi surface anisotropies are pointed out for both compounds suggesting new experiments on single crystals.     

Valence band of molybdenum by photoelectron spectroscopy

Experimental photoelectron spectra of a clean polycrystalline Mo surface excited by monochromatized Al K _α X-rays are presented. The spectra are compared with valence bands obtained by UPS and by band structure calculations within the 5 eV region below the Mo Fermi level. All results mentioned above display peaks at 0.3, 1.7, 2.8 and 4 eV belowE _F. The energy distribution of the valence band does not vary with photon energy and electron emission angle for the four different polycrystalline Mo surfaces compared. It is concluded that the four peaks representing the Mo valence band are predominantly of bulk origin.     

Peculiarities of cascade photon emission and energy storage in M1−xPrxF2+x (M=Ca,Sr, Ba,x≈0.35) crystals

Peculiarities of cascade photon emission (CPE) and energy storage in M_1?xPr_xF_2+x (M=Ca, Sr, Ba, x≈0.35) crystals were studied. The investigation of lattice parameters revealed that these solid solutions belong to the fluorite structure type with the lattice constant noticeably different from that of MF₂ crystals. Absorption, emission and excitation spectra of M_0.65Pr_0.35F_2.35 were measured at LHeT and RT. As it turned out the typical for 4f²→4f² transition in Pr³⁺ emission lines are broadened as compared with the PrF₃ crystal. The analysis of the excitation spectra broadening does not allow bringing out the type of the superlattice, which is inherent to the material, but it indicates clearly the simultaneous presence of different types of the Pr centers in mixed crystals. Yet another specific feature is the higher radiation sensitivity of these fluorides relatively PrF₃, MF₂ and Pr-doped MF₂ crystals. Coloration efficiency enhances in direction Ca→Sr→Ba, and the positions of induced absorption band depend on composition of the solid solution. Colorization, thermo-stimulated luminescence and afterglow of the M_1?xPr_xF_2+x crystals denote high radiation sensitivity as compared with M_1?xCe_xF_2+x.     

Electronic structure of new multiple band Pt-pnictide superconductors APt3P

We report LDA calculated band structure, densities of states and Fermi surfaces for recently discovered Pt-pnictide superconductors APt₃P (A = Ca, Sr, La), confirming their multiple band nature. Electronic structure is essentially three dimensional, in contrast to Fe pnictides and chalcogenides. LDA calculated Sommerfeld coefficient agrees rather well with experimental data, leaving little space for very strong coupling super-conductivity, suggested by experimental data on specific heat of SrPt₃P. Elementary estimates show, that the values of critical temperature can be explained by rather weak or moderately strong coupling, while the decrease in superconducting transition temperature T _c from Sr to La compound can be explained by corresponding decrease in total density of states at the Fermi level N(E _F). The shape of the density of states near the Fermi level suggests that in SrPt₃P electron doping (such as replacement Sr by La) decreases N(E _F) and T _c , while hole doping (e.g., partial replacement of Sr with K, Rb or Cs, if possible) would increase N(E _F) and possibly T _c .