Facet formation in strained Si1−x Gex films

The surface morphology of epitaxial (001) Si_1−x Ge_x films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.     

High-temperature background of internal friction in (Co45Fe45Zr10) x (Al2O3)100 − x , Co x (CaF2)100 − x , and Co x (PZT)100 − x nanocomposites

The elastic (G) and inelastic (Q ^?1) properties of (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 ? x} , Co _x (CaF₂)_{100 ? x} , and Co _x (PZT)_{100 ? x} (x = 23–76 at %) nanocomposites obtained by ion-beam sputtering are studied in the temperature range 300–900 K. A significant rise in the Q Q ^?1 (T) curve is observed at temperatures above 650 K, which is attributed to thermally activated migration of point defects under the conditions of confined geometry.     

Crystal structure and photoluminescence of (Ba1−x−ySryEux)9Sc2Si6O24

Divalent europium-doped alkaline earth metal silicate phosphors, (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (x=0.005–0.1, y=0–0.95), have been successfully prepared by solid-state reaction at 1350 °C. The analysis of X-ray diffraction shows that the compounds are in a single phase at the proper concentration of Sr²⁺. At room temperature, the Eu²⁺-activated Ba₉Sc₂Si₆O₂₄ phosphor exhibits a single emission band peaking at about 506 nm. With the increasing content of Sr²⁺, the luminescent intensity of (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ weakens, and the emission peak shifts towards red. Luminescence concentration quenching occurs when Eu²⁺ content x is more than 1 mol% in (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (y=0/0.2). At low temperatures (Ba_0.9?ySr_yEu_0.1)₉Sc₂Si₆O₂₄ (y=0/0.2) phosphors have two emission bands corresponding to different Eu²⁺ crystallographic sites. The high energy peak (P₁) is quenched at room temperature, while the low energy peak (P₂) weakens much more slowly owing to the energy transfer from P₁ to P₂.     

High-Moment-Low-Moment Description of Magnetovolume Effects in Y(Mn x Al 1− x ) 2 and Y x Sc 1− x Mn 2

Based on the assumption of a high-moment-low-moment instability of the Mn atom, we construct a simple spin model with coupled magnetic and spatial degrees of freedom to describe the Laves phase systems Y(Mn x Al 1 m x ) 2 and Y x Sc 1 m x Mn 2 . Monte Carlo simulations of this model qualitatively reproduce anomalies observed in these materials like a discontinuous giant volume change and anomalous thermal expansion behavior.     

Valence change of europium in the Eu(Ir1−x Pd x )2Si2 silicides

Eu(Ir_1–x Pd _x )₂Si₂ solid solutions which exist only for 0x0.125 and 0.75x1 crystallize in the tetragonal ThCr₂Si₂-type structure. X-ray diffraction data, magnetic susceptibility and¹⁵¹Eu Mössbauer measurements suggest that these compounds can be characterized as homogeneous mixed valence systems. At room temperature and for 0x0.125, the europium valence decreases asx increases. For 0.75x1, a sharp continuous valence transition from Eu²⁺ to Eu³⁺ occurs near 48 K, 54 K and 78 K forx=0.75, 0.81 and 0.94 respectively. These valence changes are discussed in relation with the Eu–(Ir, Pd) interatomic distance.     

Magnetic properties of U (Fe x Al1−x )2 and U(Fe y Ni1−y )2 compounds

The results of magnetic measurements and ferromagnetic resonance studies performed on U(Fe _x Al_1–x )₂ and U(Fe _y Ni_1–y )₂ compounds over a large temperature range are reported. The saturation magnetization decreases nearly linearly when substituting Fe by Al or Ni. In the composition range x<0.84 and y<0.81, the compounds are Pauli paramagnets, except in the region with y0.10. For UNi₂ two types of magnetic behaviours are shown. This compound can be both a ferromagnet withT _c =23.5 K and a Pauli paramagnet, depending on the crystal structure. Above the Curie temperatures, the reciprocal susceptibility for the compounds with x>0.84 and y>0.81 obeys a temperature dependence of the formX=X _o+C(T-) ^–1. The effective iron moments decrease when substituting iron by nickel or aluminium. The ferromagnetic resonance measurements show that theg values are not composition-dependent. A linear variation of the mean iron magnetization with the exchange field is observed. Finally, the magnetic behaviour of iron in these compounds is analysed.     

Thermoelectric power of Ba(Fe1−x Co x )2As2 (0 ≤ x ≤ 0.05) and Ba(Fe1−x Rh x )2As2 (0 ≤ x ≤ 0.171)

Temperature-dependent, in-plane, thermoelectric power data are presented for single crystals of Ba(Fe_1?x Co _x )₂As₂ (0?≤?x?≤?0.05) and Ba(Fe_1?x Rh _x )₂As₂ (0?≤?x?≤?0.171). Given that previous thermoelectric power and angle resolved photoemission spectroscopy studies of Ba(Fe_1?x Co _x )₂As₂ delineated a rather large Co-concentration range for Lifshitz transitions to occur, and the underdoped side of the phase diagram is poorly explored, new measurements of thermoelectric power on tightly spaced concentrations of Co, 0?≤?x?≤?0.05, were carried out. The data suggest evidence of a Lifshitz transition, but instead of a discontinuous jump in thermoelectric power in the range 0?≤?x?≤?0.05, a more gradual evolution in the S(T) plots as x is increased was observed. The thermoelectric power data of Ba(Fe_1?x Rh _x )₂As₂ show very similar behavior to that of Co substituted BaFe₂As₂. The previously outlined T–x phase diagrams for both systems are further confirmed by these thermoelectric power data.     

Valence state and magnetic interactions in magnetically ordered Eu(Pd1−x Au x )2Si2

X-ray diffraction,¹⁵¹Eu Mössbauer effect (ME) and magnetic susceptibility measurements have been performed to investigate the valence behavior and the magnetic interactions of the Eu ions in the intermetallic series Eu(Pd_1–x Au _x )₂Si₂ (0x1) as a Forx>0.4 all experimental techniques are in agreement with each other and suggest a divalent 4f ⁷ ground state of the Eu ion. Belowx=0.4 the different methods lead to different results: while the lattice parameters and the ME isomer shift suggest an instable behavior of the valence the magnetic susceptibility proves a pure divalent 4f ⁷ ground state. These differences can be explained by assuming a partial extension of the 4f-shell radius such that the localized character of the 4f-electrons is preserved.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

Mössbauer study of mixed valent silicides Eu(Ir1−x Pd x )2Si2

The solid solutions Eu(Ir_1–x Pd _x )₂Si₂, which exist for 0x0.125 and 0.75x1. cristallize with the tetragonal ThCr₂Si₂-type structure. The variation of the europium valence with composition has been thoroughly studied at temperatures 4.2T293 K by¹⁵¹Eu Mössbauer resonance. For 0x0.125 the europium valence at room temperature decreases asx increases. For 0.75x1 the valence transition temperature Eu³⁺Eu²⁺ increases asx increases.     

Single crystal growth and superconductivity of Ca(Fe1−x Co x )2As2

We report the single crystal growth of Ca(Fe_1?x Co _x )₂As₂ (0?≤?x?≤?0.082) from Sn flux. The temperature–composition phase diagram is mapped out based on the magnetic susceptibility and electrical transport measurements. The phase diagram of Ca(Fe_1?x Co _x )₂As₂ is qualitatively different from those of Sr and Ba; this could be due to both the charge doping and structural tuning effects associated with Co substitution.     

Preparation and characterization of Al and La co-doped (Ce1−x−y Al x LayO2-(x+y)/2) ceria

Effect of co-doping of lanthanum and aluminum on ionic conductivity of CeO₂ for its use as a solid electrolyte in intermediate temperature solid oxide fuel cells has been studied. A few compositions in the system Ce_1???x???y Al _x La_yO_{2???(x?+?y)/2} (CAL) with x?=?0.05, 0.025, and 0.00 and y?=?0.00, 0.025, and 0.05 such that x?+?y?=?0.05 are prepared by auto-combustion method. X-ray diffraction patterns show that all the synthesized samples are ceria-based solid solutions. Microstructures of thermally etched samples have been studied by scanning electron microscope. To determine the contribution of grains, σ _g and grain boundaries, σ _gb to the total conductivity, σ _t impedance is measured in the frequency range 1–1 MHz at different steady temperatures in the range 250–500 °C. It has been found that conductivity of the co-doped composition is more than singly doped with Al but less than singly doped lanthanum composition.     

Oxidation of Si(1 1 1) promoted by K multilayers: K and SiO2 islands

In the context of the alkali-metal promotion of Si oxidation, high-pressure oxidation of potassium multilayers on cooled Si(111) has been investigated using SEM, micro-AES and AFM. The oxidation process at high pressure turns the potassium islands observed at high coverage into potassium oxides islands. A subsequent potassium desorption at moderate temperature (900 K) yields SiO₂ islands (height of 20 nm and lateral dimensions of 10 m) surrounded by a thin continuous SiO₂ overlayer. Other conditions such as potassium multilayer coverage exposed to a low O₂ pressure, potassium monolayer or simultaneous potassium/oxygen adsorption yield a uniform SiO₂ overlayer.     

Influence of C on Ge incorporation in the growth of Ge-rich Ge1−x−ySixCy alloys on Si (100)

Amorphous carbon nitride powders are successfully produced by ammonothermal synthetic routes. The existence of the chemical bonding of C≡N in the powders is confirmed by Raman and infrared spectra. Raman spectra of various samples show that the G-band frequency shifts to higher energies, and the intensity ratio I_D/I_G decreases as the N content increases. The Knoop hardness of the sintering sample is up to 1200 kgf/mm². The hardness of the sample increases with increasing of the N content. Received: 24 May 2000 / Accepted: 26 May 2000 / Published online: 2 August 2000     

Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

Films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage characteristics and the spectral dependence of the photocurrent for the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have been analyzed. The grown epitaxial films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have a perfect single-crystal structure with a (111) orientation and a subgrain size of 60 nm. In the epitaxial films at the Si-SiO₂ interfaces between silicon subgrains and SiO₂ nanocrystals, where there are many sites with a high potential, the Sn ions with a high probability substitute for the Si ions and encourage the formation of Sn nanocrystals with different orientations and, as follows from the analysis of the X-ray diffraction patterns, with different sizes: 8 nm (for the (101) orientation) and 12 nm (for the (200) orientation). The current-voltage characteristics of the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) are described by the exponential law J = J ₀exp(qV/ckT) at low voltages (V < 0.2 V) and the square law J = (9qμ _p τ _p μ _n N _d /8d ³)V ² at high voltages (V > 1 V). These results have been explained by the drift mechanism of charge carrier transport in the electrical resistance relaxation mode.     

Synthesis,microstructure and dielectric properties of (1−x)PSN−xPLuN

Ceramic lead niobates and their solid solutions PSN–PLuN (pure lutecium niobate) were synthesized by solid state reactions. The sequence of phases formed at PSN–PLuN synthesis has been studied by X-ray analysis. Their symmetry changed from rhombohedral for PSN to pseudo-monoclinic for the 0.75PSN–0.25PLuN compositions. The performed EDS investigations revealed that the samples PSN–PLuN are perfectly sintered. They contain a little glassy phase and their grains are well shaped. The increase of lutecium content in the examined solid solution caused downward shift of the temperature of the phase transition. The decrease of the achieved permittivity values ? was observed as well.     

Magnetic behaviour of U(MnxAl1−x)2 compounds

The results of magnetic measurements performed on U(Mn_xAl_1−x)₂ compounds in the temperature range 4.2K < T < 800K are reported. In the low temperature range (T < 200K), UMn₂ shows a Pauli-type paramagnetism. Above 420K a Curie-Weiss behaviour is evidenced. The magnetic properties of U(Mn_xAl_1−x)₂ compounds were analysed assuming a superposition of a temperature dependent term on a Pauli-type contribution, χ_O. The effective moments as well as the χ_O values were determined both in the low (T < 200K) and high (T > 420K) temperature range. The experimental data were discussed considering changes in the band structure and/or quenching of spin fluctuations.     

Subsurface localization of charge carriers in Si/SiO2/Si x Ge1 − x nanostructures

Analysis of the capacitance-voltage (C-V) characteristics reveals an elevated concentration of charge carriers under the surface of a silicon substrate due to the formation of elastically stressed regions induced in the substrate by Si _x Ge_{1 ? x} nanoislands grown on the preliminarily oxidized Si surface. The C-V characteristics exhibit charge density peaks at a depth from 700 to 1000 nm for Si/SiO₂/Si _x Ge_{1 ? x} structures with various thicknesses of the SiO₂ layer. The results of theoretical calculations of the electron density distribution in the bulk of the silicon substrate correspond on the whole to the C-V characteristics. The state of the interfaces in the structures with different thicknesses of the oxide layer, which determines the effects of surface and interfacial recombination as well as charge carrier scattering, is studied by analyzing the kinetics of decay of a photo-emf signal and the photo-emf distribution over the surface of the structure. The results can be used in the development of various devices based on SiGe with inclusions of oxide layers.     

Effect of surface segregation on the sharpness of heteroboundaries in multilayered Si(Ge)/Si1−x Gex structures grown from atomic beams in vacuum

The main reasons for composition intermixing in the vicinity of heteroboundaries in an Si(Ge)/Si_1?x Ge_x heterosystem grown by the molecular beam epitaxy method are considered. The proposed model explains all the experimentally observed peculiarities, such as the clearly manifested asymmetry of the solid solution profile in layers, and demonstrates the noticeable erosion of the composition profile at the boundaries even in the absence of the surface segregation effect. It is shown that the surface segregation in the Ge/Si_1?x Ge_x system may play a positive role, leading to an increase in the profile steepness of the Si_1?x Ge_x layer near the boundaries.