Der Zerfall des Ag106g und Ag106m

The decays of the 25 min-Ag^106g and 8.3 d-Ag^106m have been investigated using Ge(Li)- and Si(Li)-counters. Theγ-rays of 17 transitions in the Ag^106g -decay and of 42 transitions in the Ag^106m -decay have been observed and their energies and relative intensities have been determined. The intensities of theseγ-rays and the intensities of conversion-electrons known from earlier measurements allow the determination ofK-conversion-coefficients for 23 transitions. The present data are consistent with a level-scheme of Pd¹⁰⁶ having states at 0, 0⁺; 511.8, 2⁺; 1127.8, 2⁺; 1133.1, 0⁺; 1228.8, 4⁺; 1557.4, 3⁺; 1562, 2⁺; 1702.8, 4⁺; 1931.7, 3, 4⁺; 2002, 0⁺; 2040.4, 3, 4⁺; 2076.8, 3, 4⁺; 2084.2, 3^?; 2305.7, 4^?; 2324, 1, 2⁺; 2350.4, 3, 4⁺; 2365.3, 3, 4⁺; 2529, 1, 2⁺; 2756.3, 5⁺; 2951.3 keV, 5⁺. The level-scheme of Pd¹⁰⁶ is compared with the predictions of the vibrational model for spherical nuclei.     

Epitaxial periodic p-n structures in PbS

The electrical and photoelectrical properites of periodic p-n structures in an epitaxial film of PbS are studied. The plane of the junctions is perpendicular to the plane of the film. The possibility of using such structures in the photodiode mode as low inertia detectors of IR radiation is shown. Qualitative agreement of the dark characteristics (volt-ampere curve, temperature dependence of resistance) of the p-n structure and photosensitive polycrystalline films was noted. This confirms the hypothesis that in sensitization of polycrystalline films, barriers of the p-n junction type are formed.     

Low-lying excited states of106Ag studied with the103Rh (α,nγ)106Ag and104Pd (α,pnγ)106Ag Reactions

The level scheme of¹⁰⁶Ag has been studied using the¹⁰³Rh(α,nγ)¹⁰⁶Ag and¹⁰⁴Pd(α,pnγ)¹⁰⁶Ag Reactions. The experimental information is taken fromγ-ray coincidence data using Ge(Li)-Ge(Li) and HPGe-planar Ge(Li) configurations andγ-ray angular distributions. With these measurements 126 γ rays have been assigned to¹⁰⁶Ag with 116 deexciting 78 states below 2.26 MeV in excitation. The location of the 8.4-day 6⁺ isomer is established at 89.63±0.09 keV. Many of the low-lying states are interpreted in terms of a slightly deformed rotor model.     

106Ag高自旋态结构

利用能量为60MeV的¹¹B束流, 通过¹⁰⁰Mo(¹¹B,5n)¹⁰⁶Ag熔合蒸发反应布居¹⁰⁶Ag的高自旋态, 用15台带BGO反康的HPGe探测器进行在束γ谱学测量. 通过γ-γ符合矩阵开窗分析和DCO比值分析, 建立了¹⁰⁶Ag新的能级纲图, 增加了26条新的γ跃迁和10条新能级. 通过与其相邻同位素奇奇核的系统比较, 对¹⁰⁶Ag的4条转动带的组态及结构性质进行了初步讨论.     

Dramatic transition between electric and magnetic rotations in 106Ag

The lifetimes for the states of magnetic dipole band in106Ag have been measured using the Doppler-shift attenuation method via the reaction of100Mo(11B,5n)106Ag at a beam energy of 60 MeV.The reduced transition strengths of the magnetic dipole band,the B(M1)/B(E2)ratios together with the signature of the level energy as a function of angular momentum for the positive parity states of106Ag show that a drastic change of excitation mode,that is,from electric rotation to magnetic rotation,occurs within one unit of spin at around Iπ=12+.Theoretical calculations based on the triaxial projected shell model consistently reproduce the experimental data and provide an explanation on the nature of observed phenomena such that the dynamical drift of the rotational axis suddenly from the principal axis to the tilted one,along the positive parity bands of106Ag.     

Kinetics of breakdown electroluminescence in silicon carbide p-n structures

Using a single photon statistics method providing time resolution of 0.25 ns, the effect on the breakdown electroluminescence kinetics in light-emitting diodes based on silicon carbide of particular features of the p-n junction structure was studied. Conditions were identified under which the relaxation times did not exceed a few tenths of a nanosecond and were outside the resolution range of the registration system.     

Radiative recombination of Al+-implanted alpha-sic p-n structures

It has been shown that the radiation spectrum of implanted α-SiC p-n structures depends on the heat treatment temperature. The radiative intensity of green and IR peaks varies with the increase of the heat treatment temperature: at the minimum temperature the IR peak is dominating, while at the maximum temperature the green line is dominant. In this case the IR line disappears practically completely. The presence of green luminescence seems to be attributed to radiative recombination at donor-acceptor pairs. The IR luminescence line should be ascribed to the radiative recombination at deep (～1.5 eV) levels produced during ion implantation.     

Electromagnetic Transition Strengths and New Insight into the Chirality in ^106Ag

Excited states in ^106Ag are populated through the heavy-ion fusion evaporation reaction ^100Mo（ll B,5n）^106Ag at a beam energy of 60MeV. Lifetimes are measured for transitions of the two negative-parity rotational bands in the nucleus ^106Ag. The reduced transition probabilities show a great difference between the two bands. The staggering of the B（M1） and B（M1）/B（E2） values with spin are not observed. The bands are identified to be built on two distinct quasiparticle configurations. These results are contrary to an earlier suggestion that the pair of bands in ^106Ag are chiral doublet bands.     

Graphene/Ag2ZnSnSe4诱导p-n结薄膜太阳电池数值模拟

银锌锡硒(Ag2ZnSnSe4)是一种禁带宽度为1.4 eV的n型半导体材料.本文提出一种由n型Ag2ZnSnSe4与石墨烯(Graphene)组成的Graphene/Ag2ZnSnSe4诱导p-n结薄膜太阳电池,并借助wxAMPS软件对电池的物理机理和性能影响因素进行模拟研究.模拟结果表明,高功函数的石墨烯与n型Ag2ZnSnSe4半导体接触时,Ag2ZnSnSe4吸收层的前端能带向上弯曲,在n型Ag2ZnSnSe4吸收层表面诱导形成p型Ag2ZnSnSe4反型层,p型Ag2ZnSnSe4和n型Ag2ZnSnSe4组成p-n同质结.模拟发现石墨烯和背接触的功函数会影响载流子的分离、输运和收集,严重影响器件性能,石墨烯功函数达到5.5 eV,背接触功函数不高于4.4 eV,都有利于提高器件性能.Ag2ZnSnSe4吸收层的掺杂浓度主要影响器件的短路电流,而Ag2ZnSnSe4吸收层的体内缺陷对器件整体性能产生影响.在石墨烯和背接触功函数分别为5.5和3.8 eV,Ag2ZnSnSe4吸收层的掺杂浓度和缺陷密度分别为1016和1014 cm–3时,Graphene/Ag2ZnSnSe4诱导p-n结薄膜太阳电池能够取得高达23.42%的效率.这些模拟结果为设计新型高效低成本太阳电池提供了思路和物理阐释.     

Preparation and study of p-n junction structures based on solid solutions AlxGa1-xSb

Layers of the solid solutions Al_xGa_1-xSb and p-n junctions based on these materials are prepared on gallium antimonide substrates by liquid epitaxy methods. Electrical characteristics of structures with AlSb content in the junction region up to 57 mol. % are evaluated. It is shown that reverse current in such structures decreases with increase in AlSb content. Photosensitivity spectra for p-n junctions with various Al_xGa_1-xSb compositions are presented.     

New band structures in ~（107）Ag

High spin states in ¹⁰⁷Ag are studied via the ¹⁰⁰Mo(¹¹B, 4n)¹⁰⁷Ag reaction at an incident beam energy of 60 MeV. Prompt γ-γ coincidence and DCO ratios are measured by the detector arrays in CIAE. The level scheme has been updated and a new negative band belonging to ¹⁰⁷Ag is identified. The new negative side band has been constructed and its configuration is tentatively assigned to πg_9/2 νh_11/2(g_7/2/d_5/2).     

Angle-resolved photoemission study for double Ag nanofilm structures

We have carried out an angle-resolved photoemission study for Ag/Cu/Ag/Cu(1 1 1) system in order to investigate the electronic coupling between the two quantum-well (QW) states in the double Ag nanofilm structures. It is found that the outer nanofilm thickness dependence of QW state in double Ag nanofilm structures can be explained as the electronic coupling through the thin Cu barrier layer between the QW states in the inner and outer Ag nanofilms. It is also found that the coupling strength depends on the Cu barrier thickness. From these results, we discuss the electronic coupling between the two QW states in the double Ag nanofilm structures.     

Comparison of electronic structures of mass-selected Ag clusters and thermally grown Ag islands on sputter-damaged graphite surfaces

Ag cluster anions consisting of 3–16 atoms were deposited on sputter-damaged HOPG surfaces using a soft-landing technique (mean deposition energy less than 0.2 eV/atom) at room temperature. For investigations of the structures of deposited clusters, X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used. In addition, the chemical properties of deposited clusters were studied using atomic oxygen and CO. Comparison of the properties of deposited Ag clusters and Ag islands with similar sizes grown by evaporating Ag atoms on the same substrate shows different results, implying that two different preparation methods give either different shapes of Ag clusters and islands, or dissimilar metal–support interactions. PACS 73.22.-f     

Effect of fast electron irradiation on the electroluminescence spectrum of GaP:N p-n structures

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 49, No. 5, pp. 785–789, November, 1988.     

High sum-frequency generation in dielectric/antiferromagnet/Ag sandwich structures

We present a method to increase the sum-frequency(SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.     

Effect of gamma softness on the stability of chiral geometry: spectroscopy of 106Ag

A study of the nucleus 106Ag has revealed the presence of two strongly coupled negative-parity rotational bands up to the 19- and 20- states, respectively, which cross each other at spin I approximately 14. The data suggest that near the crossover point the bands correspond to different shapes, which is different to the behavior expected from a pair of chiral bands. Inspection of the properties of these bands indicates a triaxial and a planar nature of rotation for the two structures. Possible causes for this may be understood in terms of a shape transformation resulting from the large degree of gamma softness of 106Ag. These data, along with the systematics of the odd-odd structures in the mass 100 region, suggest that gamma softness has marked implications for the phenomenon of nuclear chirality.