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1.
现有的HL-2A实时平衡重建系统采用的是网格尺寸为33×33,将无法满足HL-2M装置对控制精度和速度要求。为此开发了网格尺寸为129×129的重建系统,并通过GPU并行、算法重构等优化方法,使得新的重建系统在保证计算精度的情况下能够使得每一次平均重建计算维持在600μs内,可满足HL-2A和HL-2M中周期为1ms等离子体控制系统对重建系统精度和速度要求。  相似文献   

2.
现有的HL-2A实时平衡重建系统采用的是网格尺寸为33×33,将无法满足HL-2M装置对控制精度和速度要求.为此开发了网格尺寸为129×129的重建系统,并通过GPU并行、算法重构等优化方法,使得新的重建系统在保证计算精度的情况下能够使得每一次平均重建计算维持在600μs内,可满足HL-2A和HL-2M中周期为1ms等离子体控制系统对重建系统精度和速度要求.  相似文献   

3.
在电流丝模型对HL-2A装置等离子体边界重建取得满意结果[3]、[5]的基础上,本文用有限电流元模型对HL-2A等离子体边界进行了重建研究。计算和实验结果表明,在通常情况下,有限电流元模型比固定电流丝模型的重建误差稍小,前者误差小于3mm,后者误差小于6mm。当部分有限电流元分布在等离子体边界之外时,用有限电流元模型仍然可以成功重建边界。有限电流元的位置在一定范围内变化时,重建的误差都很小。用普通奔腾4 2.4GHz PC机计算一组等离子体放电边界的时间不超过1ms。有限电流元法能准确而快速地识别等离子体的偏滤器位形,这对于HL-2A装置的实时位形控制是基本和重要的。  相似文献   

4.
HL-2M 装置设计有 8 套固定极向限制器和 1 套活动极向限制器,其主要功能是进一步加强保护真空 室及其内部件,同时活动限制器还将提供不同孔栏位形用于等离子体物理实验。根据 HL-2M 装置总体运行需求, 活动限制器结构设计可移动有效距离为 120mm,活动限制器移动精度可控制在±0.1mm 以内。基于激光跟踪仪测 量方法对 HL-2M 装置限制器系统完成了高精度的安装,限制器的面向等离子体关键位置安装精度优于±0.5mm, 通过初始等离子体放电实验表明其运行状态均正常。   相似文献   

5.
基于 FPGA 和 IEEE1588PTPv2 协议设计了 HL-2M 装置时序控制系统,用于在精准时刻为测控系统 提供触发。数据采集系统采用客户端/服务端双模式管理。在 HL-2M 装置初始等离子体放电实验中测试结果表明, 时序控制和采集系统具有纳秒级精度触发,实时性强,数据传输速度快,稳定可靠,方便部署和管理的特点,满 足 HL-2M 等离子体放电实验的应用需求。  相似文献   

6.
根据基尔霍夫电律和牛顿力学,推导出了HL-2A等离子体平衡响应线性模型。基于matlab/simulink仿真平台并利用HL-2A装置历史实验数据,对等离子体响应模型进行了仿真分析。结果表明,此响应模型能够较好地反映极向场线圈电压与等离子体参数、磁通、磁场等物理量之间的关系,可以作 HL-2M装置位形控制器的研究设计基础。  相似文献   

7.
在Tokamak等离子体实验结果分析中实际的平衡磁面是极需要的。本文试探从电磁测量信号推得平衡磁面。 一、自由边界平衡程序 借助于自由边界平衡程序计算中等托卡马克装置HT-6M的平衡量。从MHD平衡方程出发,  相似文献   

8.
首次用三道光纤探测器,伸入HL-1装置内真空室,采集活动石墨孔栏处等离子体光信号,用22m石英长光纤传输光信号至控制室进行观测。通过边界等离子体H_α和杂质辐射的时空分布,初步探讨了HL-1装置的脱离等离子体。  相似文献   

9.
针对HL-2A装置改造中的HL-2M方案进行的一种数值模拟,模拟放电初始阶段零场区域的设计、等离子体平衡位形的演化和稳态阶段的单零偏滤器平衡位形、结果表明,该装置设计方案能够满足装置设计要求。  相似文献   

10.
2006年等离子体理论与模拟研究室主要围绕以下2个方向展开了研究活动。进行了HL-2A装置的升级改造和实验的数值模拟,例如:HL-2A装置弹丸注入实验模拟和HL-2M装置平衡位形设计;对一些热门的等离子体物理问题进行了研究,例如:Streamer与电子温度梯度湍流的相互作用,剪切流和输运垒的形成机制等。  相似文献   

11.
盛天爽  余邱昱 《大学物理》2021,40(3):66-68,78
针对气泡连通装置的平衡稳定性分析,引入"气泡坐标"概念,并采用最小能量法定量分析气泡初始状态对两连通气泡平衡稳定性的影响,准确解释了对此类问题的定性分析结果.同时,实验表明数值计算结果与实验测量结果之间误差极小,从而进一步验证了使用最小能量法分析气泡连通装置平衡稳定性的有效性与准确性.  相似文献   

12.
对托卡马克平衡反演数值计算代码EFIT进行了改进,使之适用于EAST装置的磁流体平衡研究.用改进后的平衡反演代码EFIT模拟了EAST装置稳态阶段的偏滤器平衡位形.提出极向场线圈电流作为线性方程组主约束条件,期望位形作为从约束条件,求解非对称电流条件下自由边界平衡问题的方法.结果表明,该方法能较为容易地得到非对称电流条件产生的平衡位形,在非对称电流条件下自由边界平衡计算是收敛的.  相似文献   

13.

The conditions providing the equilibrium stationary state of high-density solid and annular electron beams, transported in cylindrical drift tubes and focused by a homogeneous magnetic field, have been investigated. An efficient numerical model is proposed to determine the distributions of the electrostatic potential, charge density, and electron velocities in the stationary state of these beams, with allowance for the space-charge forces. The results of the numerical calculations for the limiting currents, determined by the longitudinal deceleration (caused by space-charge forces) and conditions for equilibrium transverse magnetic focusing for transported beams of different configurations on the length of a klystrontype vacuum electronic device, are presented. The limitations on the device working length, related to the excitation of diocotron instability, are estimated. The calculation results are compared with the data obtained using the quasi-three-dimensional program “Arsenal-MSU” and analytical formulas suggested by other researchers.

  相似文献   

14.
本文叙述了用“点线圈感应法”测量“预试环”装置的纵向场、平衡场以及几种杂散场的方法,并给出相应的结果。  相似文献   

15.
托卡马克等离子体的三角形变和拉长比对约束和磁流体稳定性有很强的影响,因此在托卡马克装置极向场设计中,在基于物理和工程考虑所预先选定的等离子体平衡位形几何参数下,如何优化确定外部极向场线圈位置和电流,是一个具有重要实际意义的研究课题.为优化确定托卡马克极向场线圈,给出了一个有效的多变量平衡优化方法,能以事先规定的等离子体平衡位形的一些几何参数为目标函数,优化确定极向场线圈位置和电流.并应用它于HT-7U平衡位形计算,得到了所需的结果. 关键词: 等离子体平衡 极向场线圈 优化  相似文献   

16.
It is very important to calculate the equilibrium magnetic field configuration exactly and to estimate the parameters of the device needed for the equilibrium and stability in the design and operate the low-aspect-ratio tokamak, one of the axis-symmetrical torus devices which is widely used in the research of nuclear fusion using plasma. In the previous researches, there were the theoretical and numerical interpretation methods for the high-aspect-ratio tokamak plasma. But for the low-aspect-ratio tokamak plasma, numerical methods such as the finite element method and iteration method are usually used. In this research, we interpreted and examined the features of magnetohydrodynamic equilibrium of the low-aspect-ratio tokamak plasma in combination with the Green function method and finite element method which has high numerical value accuracy.  相似文献   

17.
This paper presents a small-signal model for graphene barristor, a promising device for the future nanoelectronics industry. Because of the functional similarities to the conventional FET transistors, the same configuration and parameters, as those of FETs, are assumed for the model. Transconductance, output resistance, and parasitic capacitances are the main parameters of the small signal equivalent circuit modeled in this work. Recognizing the importance of physical modeling of novel semiconductor devices, we develop physical compact expressions for the device radio-frequency characteristics. Furthermore, we clarify the physics behind the variation of the characteristics as the device parameters change. We also validate our model results with available simulation results. Impact of equilibrium Schottky barrier height of the graphene–silicon junction on the radio frequency performance of barristor is investigated, too.  相似文献   

18.
Spontaneous current jump resulting in the formation of closed field equilibrium has been observed in electron-cyclotron-heated toroidal plasmas under steady external fields composed of a toroidal field and a relatively weak vertical field in the low aspect ratio torus experiment device. This bridges the gap between the open field equilibrium maintained by a pressure-driven current in the external field and the closed field equilibrium at a larger current. Experimental results and theoretical analyses suggest a current jump model that is based on the asymmetric electron confinement along the field line appearing upon simultaneous transitions of field topology and equilibrium.  相似文献   

19.
The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.  相似文献   

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