Comparison of electro-optical and acousto-optical Q-switched,high repetition rate Nd:GdVO<Subscript>4</Subscript> laser

The differences between the performances of electro-optical (EO) and acousto-optical (AO) Q-switched, diode pumped Nd:GdVO₄ laser at high repetition rates were detailed in this paper. The results revealed that EO Q-switch was more favorable to obtain short pulse width and high peak power laser than AO Q-switch under high repetition rate operation. The minimum pulse widths at 100 kHz were 20.2 ns under EO operation and 28.7 ns under AO operation, corresponding to peak powers of 3.1 kW and 2.2 kW, respectively. The corresponding values at 10 kHz were 5.3 ns, 9.0 ns and 77.4 kW, 45.6 kW, respectively.     

Cavity-dumped mode-locked Nd:GdVO<Subscript>4</Subscript> laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO₄ laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.     

Diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser

By using both an acoustooptical (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, a diode-pumped doubly Q-switched Nd:GdVO₄ laser, which can generate short pulses with high peak powers and symmetric temporal profiles, has been demonstrated. A peak power of 3.05 kW with a corresponding pulse width of 16 ns has been achieved at an incident pump power of 7.7 W. A reasonable analysis about the experimental results has been given by considering the ground-state absorption and excited-state absorption of a Cr⁴⁺:YAG crystal.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

A high beam quality laser-diode end-pumped Nd:GdVO<Subscript>4</Subscript> slab laser

An 83 W, near-diffraction-limited LD end-pumped Nd:GdVO₄ slab laser with hybrid resonator was presented with the pumping power of 238 W, the slope efficiency and optical-to-optical conversion efficiency were 39.4 and 34.9%, respectively. At the output power of 70 W, beam quality M² factors were 1.2 in stable direction and 1.3 in unstable direction.     

Cavity-dumped electro-optical Q-switched Nd:GdVO4 laser with high repetition rate

We reported a cavity-dumped operation of electro-optical Q-switched Nd:GdVO₄ laser at high repetition rates for the first time. A constant 5.5 ns pulse duration was realized. The maximum average output power was 5.1 W at the highest repetition rate of 50 kHz, corresponding to a peak power of 18.5 kW.     

Diode single-end-pumped AO Q-switched Nd:GdVO<Subscript>4</Subscript> 266 nm laser

By simple extra-cavity frequency conversion, the performance of a diode single-end-pumped AO Q-switched Nd:GdVO₄/KTP/BBO 266 nm laser was demonstrated. Under the incident pump power of 14.32 W, the maximum average output power at 266 nm was 374 mW at the repetition of 20 kHz; the opticaloptical conversion efficiency was 2.6%. The corresponding pulse width was 5 ns, with the single-pulse energy and peak power calculated to be 18.7 μJ and 3.74 kW, respectively. The dependence of the operational parameters on the pump power was also investigated experimentally.     

High-pulse-stability double-end continuous-grown YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> acousto-optically Q-switched laser at high repetition rates

High pulse amplitude stability of 0.62% (rms) is achieved at 60 kHz repetition rate in fundamental mode with double-end continuous-grown YVO₄/Nd:YVO₄/YVO₄ composite crystal. The average output power and pulse peak power are 32.9 W and 27.7 kW, respectively, with 19.8 ns pulse width and 548 μJ pulse energy. The pulse amplitude stability is investigated experimentally. The stability gets improved with the decrease of repetition rate and output transmission. From theoretical analysis, the reason of pulse instability at high repetition rates is that the initial population inversion doesn’t saturate and the final population inversion doesn’t approach zero. With the decrease of repetition rate and output transmission, the final population inversion decreases and the interaction between two adjacent pulse periods is weakened. Therefore, pulse stability improves.     

All solid-state CW Nd:GdVO<Subscript>4</Subscript>-GdCOB laser at 670 nm

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.32 W of continuous wave (CW) output power at 670 nm is achieved with 15-mm-long GdCOB. The optical-to-optical conversion efficiency is up to 7.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

Compact TEM<Subscript>00</Subscript> grazing-incidence Nd:GdVO<Subscript>4</Subscript> laser using a folded cavity

A compact diode-side-pumped Nd:GdVO₄ laser system using a folded cavity and grazing-incidence configuration is presented. The highest multimode output power obtained was 21.8 W at 36 W of effective diode pump power. Highest optical-to-optical conversion efficiency of 61.5% was achieved at 33 W of effective diode pump power with 20.3 W of multimode output power. For single-mode TEM₀₀ operation, an intracavity telescope was adopted for mode matching in the horizontal direction. Because of the folded cavity and the intracavity telescope, this laser head was the most compact to our knowledge of the TEM₀₀ grazing-incidence laser geometry. At last, an output power of 15 W was produced at 36 W of effective diode pump power. The stable Q-switching operation was also obtained. PACS 42.55.-f; 42.55.Xi; 42.60.Gd     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

High repetition rate passive Q-switching of diode-pumped Nd:GdVO<Subscript>4</Subscript> laser at 912 nm with V<Superscript>3+</Superscript>:YAG as the saturable absorber

The character of a diode-pumped passively Q-switched Nd:GdVO₄/V³⁺:YAG 912 nm laser was demonstrated for the first time to our knowledge. With an absorbed pump power of 7.4 W, an average output power of 360 mW with a Q-switched pulse width of 328 ns at a pulse repetition rate of 163 kHz was obtained. The Q-switching efficiency was found to be 32.7%. Our work further indicated V³⁺:YAG could be an effective fast passive Q-switch for 0.9 μm radiation.     

Compact efficient self-frequency Raman conversion in diode-pumped passively Q-switched Nd:GdVO<Subscript>4</Subscript> laser

I report the first demonstration of the generation of efficient sub-nanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:GdVO₄/Cr⁴⁺:YAG laser. The conversion efficiency for the average power is 7% from pump diode input to self-Raman output and the slope efficiency is up to 14%. At an incident pump power of 2.0 W, the pulse duration, pulse energy, and peak power for the Stokes wavelength of 1175.6 nm were found to be 750 ps, 6.3 J, and 8.4 kW, respectively, with a pulse-repetition rate of 22 kHz. PACS 42.55.Ye; 42.55.Xi; 42.60.Gd     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

High efficiency 1341 nm Nd:GdVO<Subscript>4</Subscript> laser in-band pumped at 912 nm

A high-efficiency 1341 nm Nd:GdVO₄ laser in-band pumped at 912 nm is demonstrated for the first time. Using an all-solid-state Nd:GdVO₄ laser operating at 912 nm as pump source, 542 mW output was obtained with 1.14 W absorbed pump power. The slope efficiency with respect to the absorbed pump power was 56.6%, and the fluctuation of the output power was better than 2.6% in the given 30 min. The beam quality factor M ₂ is 1.15.     

Fabrication of aligned single wall carbon nanotube absorbers for high power passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and 790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO₄ laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking.     

All-solid-state CW Nd:GdVO<Subscript>4</Subscript>-LBO red laser under direct 912 nm pumping

We report a red laser at 670.5 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1341 nm Nd:GdVO₄ laser under in-band diode pumping at 912 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic generation of the laser. At an incident pump power of 8.9 W, as high as 347 mW of CW output power at 670.5 nm is achieved. The fluctuation of the red output power was better than 3.7% in the given 30 min, and the beam quality factor M ² is 1.65.     

Nd:GdVO<Subscript>4</Subscript> slab laser with line-shaped end-pumping profile operating at 912 nm

A continuous-wave laser with line-shaped end-pumping profile operating at 912 nm is presented. The maximum output power of 7.82 W is obtained, with a slop efficiency of 24.7% and beam quality factors of M _x ² ∼ 20, M _y ² ∼ 1.3. To the best of our knowledge, this is the first laser diode bar directly pumped Nd:GdVO₄ slab laser based on the quasi-three-level ⁴ F _3/2 → ⁴ F _9/2 transition in neodymium. Furthermore, we disclose that the experimental setups can be improved by inserting a plano-concave cylindrical lens in the cavity to form a new quasi-concentric resonator to improve die mode-matching in x-direction.     

Experimental study on a diode-pumped passively mode-locking Nd:GdVO<Subscript>4</Subscript>/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO₄ laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO₄ laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.