Large Slip Length over a Nanopatterned Surface

A thermodynamic method is employed to analyse the slip length of hydrophobic nanopatterned surface. The maximal slip lengths with respect to the hydrophobicity of the nanopatterned surface are computed. It is found that the slip length reaches more than 50 μm if the nanopatterned surfaces have a contact angle larger than 160°. Such results are expected to find extensive applications in micro-channels and helpful to understand recent experimental observations of the slippage of nanopatterned surfaces.     

Synthesis and optical properties of silicon nanowires grown by different methods

We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 °C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed. PACS 81.15.Gh; 73.21.-b; 73.21.Hb; 71.20.Mq; 78.30.-j     

An investigation into the effects of oxygen plasma discharge on tin-doped indium oxide thin films

The surfaces of tin-doped indium oxide (ITO) thin films for polymer light-emitting electrochemical cells (LECs) were modified by oxygen plasma discharge. The properties of the ITO surfaces were evaluated by means of the measurements of X-ray photoelectron spectroscopy (XPS), contact angle, surface free energy and polarity. The influence of surface properties of the ITO thin films on the performance of polymer LECs was investigated in terms of the turn-on voltage, injection current and luminance. When oxygen plasma discharge was employed to modify the ITO surfaces, the surface properties of ITO are optimized due to the improvement of surface stoichiometry and the enhancement of wettability. And the improved surface properties benefited from the oxygen plasma discharge is observed to decay with the time after the plasma discharge. The difference in chemical composition, surface free energy and polarity between the non-treated and treated ITO surfaces appears to become smaller with the increase of the time after plasma discharge. In addition, the electrical and optical performance of the devices is found to become worse with the increasing time after plasma discharge on ITO substrates. The results demonstrate that the device performance strongly depends on the ITO surface properties and the ITO/organic interface characteristics.     

Effect of a plasma polymerised linalyl acetate dielectric on the optical and morphological properties of an n-type organic semiconductor

Thin films of the n-type, organic semiconductor PDI-8CN₂ were thermally evaporated on two different dielectric surfaces and their optical and morphological properties investigated using Variable Angle Spectroscopic Ellipsometry (VASE) and Atomic Force Microscopy (AFM), respectively. The two dielectric surfaces used were SiO₂ and a plasma polymer derived from the non-synthetic monomer linalyl acetate. The characterisations were performed in order to assess the viability of plasma polymerised linalyl acetate (PLA) thin films as dielectric layers in future Organic Field-Effect Transistor (OFET) devices. These studies resulted in determination of the optical profiles (refractive index and extinction coefficient) in the UV-Vis band of PDI-8CN₂ grown on SiO₂ and an observation of uniaxial anisotropy in the organic semiconductor. This information is useful for the design of opto-electronic devices using PDI-8CN₂ layers. Variations in morphological properties and small variations optical properties were found when the PDI-8CN₂ films were grown on PLA layers, and attributed to the change in surface chemistry between dielectrics.     

Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

Potential of O₂ remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O₂ remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er₂O₃ and ZnO films. Furthermore, post-growth room-temperature remote O₂ plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.     

Laser manipulation of the size and shape of supported nanoparticles

Laser manipulation of the size and shape of metal nanoparticles prepared by self assembly of atoms on dielectric surfaces is discussed. The technique relies on the optical properties of the aggregates and the ability to remove atoms from their surfaces by laser induced thermal evaporation. A theoretical model which allows one to understand the basic mechanisms of the process is presented. Furthermore, experiments are reviewed which demonstrate that laser irradiation can be exploited for strong narrowing of initially broad size distributions yielding almost monodispersed samples and generation of aggregates with predetermined shape irrespective of their size. This makes possible preparation of very special surfaces with novel physical and chemical properties. Optical spectroscopy of the supported particles is demonstrated to be a very sensitive tool for characterization of such adsorbate/substrate systems, in particular for detection of laser induced modifications of the nanostructured surfaces. Finally, prospects for future experiments in this field and possible applications of the monodispersed systems are outlined. Received: 31 March 2000 / Accepted: 21 June 2000 / Published online: 7 March 2001     

Amino functionalization of carbon nanotube surfaces with NH3 plasma treatment

NH₃ plasma treatment of carbon nanotube (CNT) surfaces was performed with the purpose of incorporating amino groups onto the surface. Amino groups incorporated onto the CNT surface were indentified and quantified using chemical derivatization with pentafluorobenzaldehyde and subsequent characterization with X-ray photoelectron spectroscopy (XPS). The amount of incorporated amino groups reached a maximum value with increasing plasma power. The incorporation of amino groups was seriously affected by the degradation of the CNT surface during the plasma treatment, which became very serious at high plasma power, as verified with optical emission spectroscopy (OES) and FT-IR analyses. The type of species present in the plasma discharge also seems to be important for amino group functionalization; partially decomposed ammonia species are considered to be more favorable than fully decomposed atomic species.     

Modification of surface properties of polypropylene (PP) film using DC glow discharge air plasma

The industrial use of polypropylene (PP) films is limited because of undesirable properties such as poor adhesion and printability. In the present study, a DC glow discharge plasma has been used to improve the surface properties of PP films and make it useful for technical applications. The change in hydrophilicity of modified PP film surface was investigated by contact angle (CA) and surface energy measurements as a function of exposure time. In addition, plasma-treated PP films have been subjected to an ageing process to determine the durability of the plasma treatment. Changes in morphological and chemical composition of PP films were analyzed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The improvement in adhesion was studied by measuring T-peel and lap shear strength. The results show that the surface hydrophilicity has been improved due to the increase in the roughness and the introduction of oxygen-containing polar groups. The AFM observation on PP film shows that the roughness of the surface increased due to plasma treatment. Analysis of chemical binding states and surface chemical composition by XPS showed an increase in the formation of polar functional groups and the concentration of oxygen content on the plasma-processed PP film surfaces. T-peel and lap shear test for adhesion strength measurement showed that the adhesion strength of the plasma-modified PP films increased compared with untreated films surface.     

Investigation on surface properties of TiO2 films modified by DC glow discharge plasma

In the present work, TiO₂ films deposited on polyethylene terephthalate substrates by dip coating technique were subsequently treated by DC glow discharge plasma as a function of discharge potential. Hydrophilicity of these TiO₂ film surfaces was analyzed by contact angle measurements. Atomic force microscopy (AFM) revealed changes in surface morphology of the plasma treated TiO₂ films. Modifications in structural and chemical composition of the TiO₂ films were detected by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The blood compatibility of TiO₂ films was studied by in vitro investigation which includes thrombus formation and whole blood clotting time analysis (WBCT). It was found that the plasma treatment results in blood compatibility enhancement attributed to the structural, chemical and morphological properties of the modified film surfaces.     

Structural and optical properties study of nanocrystalline Si (nc-Si) thin films deposited on porous aluminum by plasma enhanced chemical vapor deposition

In this paper we report detail investigation and correlation between micro-structural and optical properties of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure. The influence of the microstructure of the nc-Si thin films on their optical properties was investigated through an extensive characterization. The effect of anodisation currents on the microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). The optical constants (n and k as a function of wavelength) of the films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The silicon layer (SL) was modeled as a mixture of void, crystalline silicon and aluminum using the Bruggeman approximation. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties. A very bright photoluminescence (PL) was obtained and find to depend on anodisation current.     

用PAA模板法实现硅基纳米孔阵列结构

用二次阳极氧化方法制备出分立、双向贯通并且超薄（500—1000 nm）的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜（SEM）测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光（PL）测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用 关键词： 多孔阳极氧化铝模板 硅基纳米孔阵列结构 图形转移     

Investigation of the optical,photoluminescence, and dielectric properties of P-Toludinium picrate single crystals

The present work deals with the synthesis and characterization of p-Toluidinium picrate (PTP), an organic non-linear optical single crystal, produced by the solvent evaporation growth technique at room temperature condition. For the physical characterization, different instrumental techniques like powder XRD analysis for the crystallinity, FTIR, and laser Raman spectral analyses for the nature of chemical bonding and functionality, the ultraviolet spectrum for the optical absorption properties, etc. were employed. Following the instrumental analysis, on testing of the photoluminescence properties, we observed the first emission peak at 359 nm in the UV region, and two other emission peaks around 443 nm and 460 nm corresponding to the blue emission region. Also, we investigated PTP's dielectric behavior at different frequencies and room temperature, where the solid-state parameters such as plasma energy, Penn gap, Fermi energy, and polarizability were measured. Based on the overall analysis of optical, photoluminescence, and dielectric properties, it can be mentioned that the synthesized PTP crystals might have potential applications in the development of semiconducting, supercapacitor, and non-linear optical devices.     

Dual-shunt branch circuit and harmonic suppressed device application

The morphological manipulation, structural characterization, and optical properties of different CdSe nanocrystals were reported. Several different CdSe nanostructures, including nanowires, tetrapod crystals, and nanoparticles were grown by varying the volume ratio of triethylenetetraamine (TETA) and water (WA) in their mixed solution. By manipulating the growth driving force (i.e., the degree of supersaturation) and kinetics of the process (i.e., growth rate), the morphology and crystal structure of CdSe nanocrystals can be tailored. Growth driving force changed their morphology from nanowires to tetrapod structures and from the latter structure to nanoparticles. Moreover, kinetics of the process altered their crystal structure from wurtzite to zinc blende. The optical property of CdSe nanocrystals was investigated using UV-vis spectroscopy. The absorption edge of CdSe nanostructures showed a blue shift. CdSe nanocrystals prepared under optimized conditions showed good microstructural and optical properties for solar cell application.     

Characterization,optimization and surface physics aspects of in situ plasma mirror cleaning

Although the graphitic carbon contamination of synchrotron beamline optics has been an obvious problem for several decades, the basic mechanisms underlying the contamination process as well as the cleaning/remediation strategies are not understood and the corresponding cleaning procedures are still under development. In this study an analysis of remediation strategies all based on in situ low‐pressure RF plasma cleaning approaches is reported, including a quantitative determination of the optimum process parameters and their influence on the chemistry as well as the morphology of optical test surfaces. It appears that optimum results are obtained for a specific pressure range as well as for specific combinations of the plasma feedstock gases, the latter depending on the chemical aspects of the optical surfaces to be cleaned.     

Study of the morphological evolution of ZnO nanostructures on various sapphire substrates

Zinc oxide (ZnO) nanostructures were grown on A-, C- and R-plane sapphires by metal organic chemical vapor deposition (MOCVD) technique. The shape of nanostructures was greatly influenced by the underlying sapphire substrate. Vertical aligned nanowires were observed on A- and C-plane sapphires, whereas the nanopencils were grown on R-plane sapphire. A correlation between the morphological and optical properties of the nanostructures has been established, where the morphological and structural characteristics are responsible for the evolution of optical properties. The nanowires, grown on C-plane sapphires, have shown superior optical properties. Comparatively higher photo-induced wettability transition has also been observed for ZnO nanostructures on R-plane sapphire.     

等离子体光学加工关键技术研究现状

等离子体加工技术是近年来发展起来的先进光学制造技术,具有快速缓解或去除传统光学加工方法导致的表面/亚表面损伤,以及高效、高精度和高分辨率修整光学面形的优势。从等离子体光学加工基本原理出发,基于等离子体激发频率与特征对发生器进行了简要叙述;进一步对各研究机构在等离子体加工技术涉及的射流特性、界面物化反应、损伤去除机理、去除函数、加工热效应和工艺定位等关键技术研究内容及成果进行分析,并对等离子体的新型光学加工技术进行介绍。随着研究的不断深入,构建多物理场和化学反应综合作用下的等离子体加工模型,揭示表面等离子体特性分布与去除函数的内在联系,从而建立准确的去除函数模型,是提高修形精度的发展方向,研究热效应控制方法和补偿策略在降低由热效应带来的修形误差方面起到了重要作用。     

Chemical and structural modifications of laser treated iron surfaces: investigation of laser processing parameters

This study focuses on the chemical, morphological and structural characterization of iron surfaces treated by laser in ambient air. Incorporation of nitrogen over a 1–2 μm thickness (10–30 at.% at the profile maximum) and superficial oxidation on 200–400 nm depth have been evidenced by nuclear reaction analyses. X-ray diffraction at grazing incidence has shown the formation of FeO and Fe₃O₄ oxide phases as well as γ-Fe(N), and ε-Fe_xN for a sufficiently high amount of nitrogen incorporated. Treatments performed with different laser beams indicate that the parameter playing the major role in surface modification processes is the wavelength. Nitrogen incorporation has been found to occur via the interaction of reactive N, present in the laser-induced plasma, and the iron molten bath. The nitriding process is promoted in the IR wavelength range. Oxidation takes place by chemical reaction during the cooling step, and is furthered in the case of UV treatment.     

Room temperature synthesis and characterization of CdO nanowires by chemical bath deposition (CBD) method

A chemical synthesis process for the fabrication of CdO nanowires is described. In the present work, transparent and conductive CdO films were synthesized on the glass substrate using chemical bath deposition (CBD) at room temperature. These films were annealed in air at 623 K and characterized for the structural, morphological, optical and electrical properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical and electrical resistivity. The XRD analysis showed that the as-deposited amorphous can be converted in to polycrystalline after annealing. Annealed CdO nanowires are 60-65 nm in diameter and length ranges typically from 2.5 to 3 μm. The optical properties revealed the presence of direct and indirect band gaps with energies 2.42 and 2.04 eV, respectively. Electrical resistivity measurement showed semiconducting behavior and thermoemf measurement showed n-type electrical conductivity.     

Fabrication of CoPt magnetic nanodot arrays by electrodeposition process

We attempted to fabricate patterned media using the electrochemical deposition process along with nanopatterned substrates prepared by the electron beam lithography (EBL), UV nanoimprint lithography (UV-NIL), and spin-on-glass nanoimprint lithography (SOG-NIL) approaches. CoPt was electrodeposited into the nanopatterned substrates and chemical mechanical polishing was carried out to planarize the surface. It was clarified that CoPt nanodot arrays were successfully deposited into the patterned nanopores fabricated by UV-NIL and SOG-NIL as well as by EBL with high area selectivity and uniformity. The density of the CoPt nanodot arrays deposited into the nanopores fabricated by EBL was equal up to an areal recording density of 250 Gbit/in².     

On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures.The liquid chemical manner of formation SiO₂/a-Si:H structures uses 68 wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO₂/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328].Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.