Giant magnetoresistance in Co–Al2O3 granular films prepared by self-organized growth

Co–Al₂O₃ granular films with a narrow distribution in cluster size of Co clusters embedded in Al₂O₃ matrix were prepared by sequential deposition based on self-organized growth. Resistivity dependence of giant magnetoresistance (GMR) was studied. The GMR takes a maximum of 5.2% at room temperature and 9.4% at 13 K and 5700 Gs when the resistivity of the sample is 4×10⁵–7×10⁵ μΩ cm. The temperature dependence of resistivities and GMR were discussed especially. A temperature dependence of conductance ρ∼exp[T₁/(T+T₀)] was found, which indicates the dominant conduction mechanism is fluctuation-induced tunneling. A linear relationship of GMR versus T was observed, GMR=a–kT, in applied magnetic field 5700 Gs. The remarkable character of temperature dependence of GMR should be due to the special microstructure that the clusters are monodispersed in the films.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

1D-3D crossover in hopping conduction of carbynes

D.C. and A.C. conductivities of carbyne samples were studied over the temperature range 1.8–300 K at frequencies 10 MHz–1 GHz. It was established that a variation in the fraction of sp ² bonds in carbynes induces transition from one-to two-and then to three-dimensional conduction. In the one-dimensional hopping conduction regime, the resistivity of carbynes depends on temperature as ρ=ρ₀exp[(T ₀/T)^1/2], whereas Coulomb correlations are insignificant. The Hunt model of one-dimensional A.C. conductivity is experimentally confirmed.     

Electric resistivity of multi-walled carbon nanotubes at high temperatures

The electric resistivity of a clean multi-walled carbon nanotube (MWNT) mat sample was studied at temperatures T between 300 and 1900 K. We found that the resistivity ρ decreases monotonously with increasing temperature without showing any sign of turn up. Our results can be well fitted with a power law of T^−α within the framework of one dimensional Luttinger liquid theory with α = 0.13 or with a simple thermally activated inter shell hopping model.     

Interpretation of temperature dependence of the in-plane electrical resistivity in YBa2Cu4O8: Electron–phonon approach

In this paper, we undertake a quantitative analysis of observed temperature-dependent in-plane normal state electrical resistivity of single crystal YBa₂Cu₄O₈. The analysis is within the framework of classical electron–phonon i.e., Bloch-Gruneisen model of resistivity. It is based on the inherent acoustic (low frequency) phonons (ω_ac) as well as high frequency optical phonons (ω_op), the contributions to the phonon resistivity were first estimated. The optical phonons of the oxygen breathing mode yields a relatively larger contribution to the resistivity compared to the contribution of acoustic phonons. Estimated contribution to in-plane electrical resistivity by considering both phonons i.e., ω_ac and ω_op, along with the zero-limited resistivity, when subtracted from single crystal data infers a quadratic temperature dependence over most of the temperature range [80 ? T ? 300]. Quadratic temperature dependence of ρ_diff. = [ρ_exp − {ρ₀ + ρ_e−ph (=ρ_ac + ρ_op)}] is understood in terms of electron–electron inelastic scattering. The relevant energy gap expressions within the Nambu-Eliashberg approach are solved imposing experimental constraints on their solution (critical temperature T_c). It is found that the indirect-exchange formalism provides a unique set of electronic parameters [electron–phonon (λ_ph), electron-charge fluctuations (λ_pl), electron–electron (μ) and Coulomb screening parameter (μ^*)] which, in particular, reproduce the reported value of T_c.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Effects of Cr doping in bilayered manganite LaSr2Mn2O7: Resistivity, thermoelectric power, and thermal conductivity

Systematic studies of resistivity, thermoelectric power, and thermal conductivity have been performed on polycrystalline bilayered manganites LaSr₂Mn_2−xCr_xO₇ (0≤x≤0.2). It is found that the temperature dependence of both Seebeck coefficient S(T) and resistivity ρ(T) in the high temperature region follows the small polaron transport mechanism for all the samples. But in the low temperature region, variable-range-hopping (VRH) model matches the experimental data better. In addition, the maximum of absolute S(T) at low temperatures is gradually suppressed for the sample with Cr-doping level of x>0.04, implying that a new FM order probably arises. With decreasing the temperatures further, S(T) has a sign change and becomes positive for the sample with Cr-doping level of x>0.04, indicating that there may occur a variation of the type of charge carrier. As to thermal conduction κ(T), the low-temperature peak is suppressed due to Cr-doping. The variation of κ(T) is analyzed based on the combined effect due to the suppression of local Mn³⁺O₆ Jahn-Teller (JT) lattice distortion because of the substitution of Cr³⁺ ions for Mn³⁺ ions, which results in the increase in thermal conduction, and the introduction of the disorder due to Cr-doping, which contributes to the decrease in thermal conduction.     

Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region

A method for analyzing data on Mott hopping conduction in a magnetic field, ρ ～ exp[(T ₀/T)^α], based on scaling relation ln[ρ(H)/ρ(0)] = (T ₀/T)^α F(H/T) for the spin-polarized contribution to the magnetore-sistance is proposed. This general approach is tested for a carbon nanomaterial synthesized from single-wall carbon nanotubes under high pressure (up to 7 GPa). The experiments confirmed the theoretical predictions over the temperature range 1.8–12.0 K in a magnetic field of up to 70 kOe and made it possible to correctly determine all parameters of the localized states involved in the model. The experimental data obtained for carbon nanomaterials synthesized from single-wall carbon nanotubes and a mixture of C_2N fullerenes indicate the possible renormalization of the magnetic moment of electrons involved in hopping transport.     

Spin-state transition, magnetic, electrical and thermal transport properties of the perovskite cobalt oxide Gd0.7Sr0.3CoO3

The magnetization, resistivity ρ, thermoelectric power (TEP) S, and thermal conductivity κ in perovskite cobalt oxide Gd_0.7Sr_0.3CoO₃ have been investigated systematically. Based on the temperature dependence of susceptibility χ_g(T) and Seebeck coefficient S(T), a combination of the intermediate-spin (IS) state for Co³⁺ and the low-spin (LS) state for Co⁴⁺ can be suggested. A metal-insulator transition (MIT) caused by the hopping of σ* electrons (localized or delocalized e_g electrons) from the IS Co³⁺ to the LS Co⁴⁺ is observed. Meanwhile, S(T) curve also displays an obvious phonon drag effect. In addition, based on the analysis of the temperature dependence of S(T) and ρ(T), the high-temperature small polaron conduction and the low-temperature variable-range-hopping conduction are suggested, respectively. As to thermal conduction κ(T), rather low κ values in the whole measured temperature range is attributed to unusually large local Jahn-Teller (JT) distortion of Co³⁺O₆ octahedra with IS state.     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

Influence of carbon concentration on structural, magnetic and electrical transport properties for antiperovskite compounds AlCxMn3

The structural, magnetic and transport properties of the antiperovskite AlC_xMn₃ (1.0≤x≤1.4) are investigated. It is found that the lattice parameter a increases monotonously with nominal carbon concentration x. The Curie temperature T_C increases with increasing x from 1.0 to 1.1 and then decreases with further increasing x. The highest T_C value is 364 K, about 70 K higher than that of stoichiometric AlCMn₃ reported previously. This may be attributed to a competition between the lattice expansion and the strong Mn 3d-C 2p hybridization. Below 100 K, the resistivity can be well described as ρ(T)=ρ₀+AT², corresponding to the electron-electron scattering. A increases with x, suggesting certain changes in the electronic structure, e.g. carrier density. Above 250 K, all ρ(T) curves depart from the linear dependence on temperature and seem to take on a tendency towards saturation.     

Transport properties and magnetoresistance in CoNb1−xMnxSb half-Heusler alloys with a low temperature localization

The transport properties and magnetoresistance of half-Heusler CoNb_1−xMn_xSb (x=0.0-1.0) alloys have been investigated between 2 and 300 K. In this temperature range, a metallic conductivity has been observed for the alloys with higher (x=1.0) and lower (x=0.0-0.2) Mn contents. However, the middle Mn content alloys (x=0.4-0.8) exhibit non-metallic conductive behavior. Their temperature dependence of resistivity undergoes a Mott localization law ρ=ρ₀exp(T₀/T)^p (p=1/4) rather than a thermal excitation regime ρ=ρ₀exp(E_a/kT) at low temperature (). The localization can be attributed to atomic and magnetic disorder. Resistivity peaks from 25 to 300 K were also observed for these alloys. Magnetotransport investigation reveals that these resistivity peaks result from localization effect as well as spin-disorder scattering.     

New insights in the T dependence of the electrical resistivity in size-effect dominated pure metal foils from measurements on high-purity Au at low T

Analysis of Soffer's size-effect theory for electrical resistivity shows, for measurements in such a T range for which the temperature dependent portion of the resistivity, ρ_i, is always much smaller than the residual bulk resistivity ρ_∞(0) of the metal studied, that while size-effects leave the essential T dependence of ρ_i unchanged, it may increase its absolute value and the observed residual resistivity ρ(0), thus explaining recent results of Caplin et al. This also corrects the general conclusion arrived at by the latter authors, i.e. that the T dependence of ρ of a metal foil of given residual resistivity is the same as that of a bulk sample of the same residual resistivity provided that the latter is governed by impurity scattering, as being true for a narrow T range only, i.e. for which ρ_i(T) ? ρ_∞(0). However, for this T range a procedure is outlined which allows one to extract values of the surface specularity parameter p_S and also ρ_∞ of the metal foils studied.     

Electrical behavior of some silver-doped lanthanum-based CMR materials

With a view to understand the structural, magnetic and electrical properties of La_1−xAg_xMnO₃ (x=0.05-0.3), a series of samples were prepared by polyvinyl alcohol (PVA) gel route. It has been found that both the metal-insulator and ferro- to paramagnetic transition temperatures after increasing up to the composition x=0.20, are found to remain constant thereafter. The electrical resistivity vs. temperature plot of the sample x=0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x=0.20 exhibits two peaks, and the observed behavior is explained on the basis of the phase separation model. The low-temperature (T<T_P), electrical resistivity data were analyzed by a theoretical model, ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects, electron-electron and two-magnon scattering processes. The low-temperature resistivity data (T<50 K) were fitted to an equation, which is based on the combined effect of weak localization, electron-electron and electron-phonon scattering.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

Magnetic and electrical behavior of La1−xAxMnO3 (A=Li, Na, K and Rb) manganites

With a view to understand the magnetic and electrical behavior of monovalent substituted lanthanum manganites, a series of materials were prepared by sol-gel route by sintering at 1200 °C. The X-ray diffraction data were analyzed using Rietveld refinement technique and it has been found that all the samples were found to crystallize into rhombohedral structure with R3¯c space group. The values of ferro to paramagnetic (T_C) and metal-insulator transition (T_P) temperatures were obtained using ac susceptibility and electrical resistivity data, respectively. It has been found that sodium-, potassium- and rubidium-doped samples exhibit two peaks in the electrical resistivity vs. temperature plots. The observed behavior has been explained on the basis of oxygen deficiency present in the samples. The electrical resistivity data were analyzed using various theoretical models and it has been concluded that the electrical resistivity data in the low-temperature regime (T<T_P) can be explained using the equation ρ_(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, signifying the importance of the grain/domain boundary, electron-electron and two magnon scattering processes. On the other hand, the high-temperature resisitivity data (T>T_P) were explained using variable range and small polaron hopping mechanisms.     

Pressure cycle of superconducting Cs0.8Fe2Se2 : A transport study

We report measurements of the temperature and pressure dependence of the electrical resistivity (ρ) of single-crystalline iron-based chalcogenide Cs_0.8Fe₂Se₂. In this material, superconductivity with a transition temperature develops from a normal state with extremely large resistivity. At ambient pressure, a large “hump” in the resistivity is observed around 200 K. Under pressure, the resistivity decreases by two orders of magnitude, concomitant with a sudden T_c suppression around . Even at 9 GPa a metallic resistivity state is not recovered, and the ρ(T) “hump” is still detected. A comparison of the data measured upon increasing and decreasing the external pressure leads us to suggest that the superconductivity is not related to this hump.     

由观测无胁强作用下的热膨胀和电阻研究金属玻璃(Fe0.85Ni0.15)84B16的结构弛豫

本文通过长度、电阻和热膨胀系数的测量研究了(Fe_0.85Ni_0.15)₈₄B₁₆金属玻璃结构弛豫和退火温度T_a的关系。基于上述物理量对结构弛豫的关系,对曲线作了分析和讨论。在退火温度为175℃至250℃之间结构弛豫随T_a的变化率最大。 关键词：     

多晶La0.7Sr0.3MnO3的低温输运性质和磁电阻效应

详细研究了由纳米晶粒组成的块体多晶La_0.7Sr_0.3MnO₃(LSM)的电阻率和磁电阻效应,以及它们的温度依赖性.随着温度从室温降低,电阻率(ρ)在250K附近存在一最大值,低于该温度后,样品表现为金属导电特性,随后在50K附近存在一极小值.也就是说在低于50K的温度范围内,随着温度降低ρ反而升高,表现为绝缘体性的导电特性.经研究发现,这种随温度降低ρ反而增加的现象与隧穿效应的理论模型(lnρ∝T^-1/2)符合得很好 关键词： 0.7Sr_0.3MnO₃')" href="#">多晶La_0.7Sr_0.3MnO₃ 隧道效应 隧道磁电阻效应     

Fe掺杂对自旋梯状化合物Sr14(Cu1－yFey)24O41的结构和电输运性质的影响

采用常规的固相合成法分别制备了Fe³⁺掺杂和2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂的两组Sr₁₄(Cu_1-yFe_y)₂₄O₄₁系列样品.X射线衍射分析显示，当Fe³⁺离子的掺杂量y≤0.03以及2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂量y≤0.02时，样 关键词： 强关联电子系统 自旋梯状结构化合物 晶体结构 电输运性质