Electron spectroscopy measurements on hydrogen implanted graphite and comparison to amorphous hydrogenated carbon films (a-C:H)

Highly oriented pyrolytic graphite (HOPG) as well as polycrystalline graphite (pc-graphite) were bombarded with 3.5 keV H⁺ ions by means of a Penning ion source. The implanted graphite was characterized by in situ electron spectroscopy techniques such as UPS, XPS and EELS. Our UPS valence band measurements of the hydrogen saturated graphite reveal it to be an insulating phase, and XPS measurements show a shift of the C1s core level to higher binding energy with respect to pristine graphite. This behavior is explained by a Fermi energy shift upon hydrogen bombardment of graphite.In addition, a close resemblance in the electronic structure of hydrogen bombarded graphite and amorphous hydrogenated carbon films (a-C:H) is shown which suggests the modification of pristine graphite to an amorphous network [1] of mostly tetrahedrally bonded carbon atoms by hydrogen implantation.     

Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to the bulk value of 23 eV is explained by a thin low density overlayer on the surface of the sample produced by the ion bombardment.     

Coupling between adsorbate vibrations and an electronic surface state

We report direct angle-resolved photoemission measurements of the coupling between the symmetric stretch vibrational mode of adsorbed hydrogen and a surface band on W(110). This coupling is manifested by the surface band being split into two branches at a binding energy comparable to the vibrational mode energy, as confirmed by observation of a dramatic hydrogen/deuterium isotope effect. The electron-phonon coupling parameter lambda is found to be significantly larger than that for bulk W, and to be closely related to the degree of surface localization of the surface state wave function.     

Ripening of subsurface amorphous C clusters formed by low energy He ion bombardment of graphite

Surfaces of highly oriented pyrolytic graphite (HOPG) were bombarded with 100 eV and 500 eV He ions at ion doses of a few 10¹⁵ cm² and temperatures ranging from 300 K to 800 K. AFM images were recorded to investigate the topography of the surfaces after ion bombardment. Supplementary electron energy loss (EEL) and thermal desorption (TD) spectra were measured to determine the C sp² fraction of the bombarded surfaces and the amount of trapped He. The temperature at which He ion bombardment was performed had a drastic effect on the surface structure and topography of the targets on the angstrom-scale and micrometer-scale as well. At 300 K, limited defect atom transport revealed an amorphous but relatively flat HOPG surface. Bombardment at 400 K leads to a granular structure of small protrusions in micrometer-scale AFM images, however, without crystalline order on the surface. The protrusions are due to the formation of subsurface clusters of carbon formed by atoms displaced by ion irradiation. Towards higher temperatures during bombardment the clusters agglomerate and cause the surface layers to bend upwards in dome-like shapes. Simultaneously, the microscopic order of the graphite lattice recovers. At 800 K large areas of the top layer retain their order during bombardment, however, a small number of domes indicate that there still exist some subsurface C clusters. The cluster–cluster distance deduced from the dome distribution indicates that the clusters grow through a ripening process. Annealing of graphite at high temperatures subsequent to ion bombardment at low temperatures is much less effective for recovering the surface crystallinity than ion bombardment at high temperature.     

The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films

The quality of co-sputtering derived Zn-In-Sn-O (ZITO) film was adjusted by different gas (oxygen and argon) induced plasma ions bombarding (PIB) treatment. The result showed that the film conductivity could be improved after plasma bombardment. The increment of oxygen vacancies and plasma bombard-induced thermal energy were main reasons. Notably, the efficiency of Ar plasma bombarded for improved conductivity not only was better but also had a smoother surface morphology. Due to Ar ions will not react with metal atoms to form oxide and possessed a higher momentum. In addition, the O-rich layer on the ultra-surface not only was removed but also enhanced film reliability by plasma bombarded that could enhance the performance of optoelectronic devices.     

Mechanisms of oxidation-reduction processes on metal and oxide surfaces under ion bombardment

Surface oxidation occurs if metals are bombarded with low-energy (1–5 keV) ions of a chemically active gas (oxygen) in vacuum. It is ascertained that ion bombardment leads to the generation of lower, intermediate, and higher oxides. The composition and thickness of an oxidized layer depend on the metal reactivity and the dose and energy of oxygen ions. The mechanism underlying the ion-beam oxidation of metal surfaces is proposed. Surface reduction is observed if higher oxides are bombarded with low-energy (1–5 keV) ions of inert gases (argon and helium) in vacuum. It is revealed that ion bombardment not only generates intermediate and higher oxides but sometimes gives rise to surface metallization. The composition and thickness of the reduced layer are determined by the oxide type, the kind of inert gases, and the dose and energy of bombardment. The mechanism describing the ion-beam reduction of higher metal oxide surfaces is proposed.     

Ar+8轰击石墨表面损伤的扫描隧道显微镜观测研究

报道了用10—112MeV能量的Ar+8离子轰击高定向石墨造成损伤的原子水平观测结果,给出了损伤形貌、损伤大小和损伤数密度.讨论了损伤与表面核能损的关系及损伤过程的可能机制.     

Effect of temperature on the sputtering yield of copper

The effect of temperature on the sputtering yield of copper for low energy argon ion bombardment is investigated. Experimentally, a phase sensitive technique utilizing the spectroscopic emission of sputtered particles is discussed. Analytically, the Langberg model for the sputtering yield is expanded to include the effect of temperature. Atoms of the bombarded surface attain a steady state distribution in the number of their bonds. Changes in either the temperature or the bombardment parameters result in changes in the distribution leading to variations in the sputtering yield. (111) and (110) single crystal and poly crystalline copper surfaces are investigated. Reasonable agreement is obtained between experimental and analytic yield values. The (111) surface shows the largest decrease in yield with an increase in temperature.     

Observation of the Damage on HOPG Surface Induced by Ar+8 Ions

Highly oriented pyrolytic graphite (HOPG) samples were bombarded by Ar+8 ions with energy range from 10.1 to 112MeV. After bombardment the sample surfaces were observed using a STM and NanoScope. The resultS show that the energetic ion could cause observable praotrusionlike damage on the HOPG surface.The relationship betWeen damage and energy loss, and the possible mechanism of damage process are discussed.     

The influence of argon ion bombardment on the electrical and optical properties of clean silicon surfaces

The effect of low energy noble gas ion bombardment on the electrical and optical properties of Si(211) surfaces has been investigated by surface conductivity and field effect measurements, ellipsometry and AES. With this combination of techniques, information is obtained concerning the electrical properties, the chemical composition and the damage of the surface layer. Upon ion bombardment in the energy range of 500–2000 eV, ellipsometry shows the formation of a damaged surface layer with optical properties close to those of an evaporated amorphous silicon film. In order to measure the conductivity changes as sensitive as possible, nearly intrinsic silicon crystals were used. For the clean, 5200 Ω cm Si(211) surface, bombarded only with a mass-analyzed argon ion beam, a small increase in conductivity is found to occur after a small ion dose (saturation after 5 × 10¹⁴ ions cm^?2 while after 5 × 10¹³ ions cm^?2 already half of the increase has occurred). The effect was found to be independent of ion energy between 500 and 2000 eV. As the field effect signal did not change after this treatment, it is concluded that the surface state density in the neighbourhood of the Fermi level shows a slight decrease.     

Effect of bombardment with iron ions on the evolution of helium,hydrogen, and deuterium blisters in silicon

The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 10¹⁷ cm^–2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe¹⁰⁺ ions with energy of 150 keV in a dose of 5.9 × 10¹⁴ cm^–2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250–900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required.     

Photoemission from multiply excited surface plasmons in Ag nanoparticles

Two-photon photoemission spectroscopy using femtosecond laser pulses is used to investigate the excitation and decay mechanisms of the surface plasmon resonance in Ag nanoparticles grown on graphite. The resonant excitation of this collective excitation leads to a two-orders-of-magnitude-enhanced two-photon photoemission yield from a graphite surface with Ag nanoparticles compared to the yield from pure graphite. From the shape of the photoemission spectra, the polarization dependence of the photoemission yield and the excitation probabilities for different excitation pathways we conclude that excitation with 400-nm femtosecond laser pulses leads to the coherent multiple excitation of the surface plasmon in the Ag nanoparticles. This multiply excited plasmon mode can decay via the coupling to a single-particle excitation leading to the emission of an electron if its final state is located in the continuum. The surface plasmon in metallic nanoparticles is a model system to investigate collective excitations in multiphoton processes. Received: 26 June 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

高能氮离子轰击对四面体非晶碳膜的表面改性和摩擦系数影响的研究

利用过滤阴极真空电弧技术制备了sp³键含量不小于80%的四面体非晶碳(ta-C)膜.利用冷阴极潘宁离子源产生不同能量的氮离子对制备的ta-C薄膜进行轰击,通过X射线光电子能谱和原子力显微镜对薄膜表面结构与形貌进行分析研究.研究表明,随着氮离子的轰击能量的增大,薄膜中的CN键结构略有增大,形成了轻N掺杂;同时,在薄膜表层发生了sp³键结构向sp²键结构的转化;薄膜的表面粗糙度在经过氮离子轰击后从0.2 nm减小至0.18 nm,然后随着轰击能 关键词： 四面体非晶碳 X射线光电子能谱 摩擦系数     

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis

The thickness of the altered layer created by ion bombardment of the 6H–SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis. After pre-bombardment of the surface by argon ions with energies 1, 2 and 4 keV until the steady state, the depth profiles of the induced altered layers were recorded by sputtering with low energy argon ions of 300 eV. Since the position and shape of the carbon Auger peak depend on the perfection of the crystalline structure, they were used for depth profile evaluation by factor analysis. In this way the depth profiles of the damaged surface region could be estimated in dependence on the ion energy. As a result, the thickness of the altered layer of SiC bombarded with 1, 2 and 4 keV Ar ions using an incident angle of 80° as well as the corresponding argon implantation profile could be measured.     

Nonlinear resonance-enhanced excitation of surface plasmon polaritons

We theoretically investigate nonlinear resonance-enhanced excitation of surface plasmon polaritons in a metal coated by a one-dimensional photonic crystal. Tunneling modes above the air-light line can be directly excited in this structure. Then, with suitable parameters, photon energy and momentum conservation between the tunneling mode and the surface plasmon polaritons can be realized by means of nonlinear four-wave mixing. Compared with the nonlinear excitation of surface plasmon polaritons in a bulk metal [Phys. Rev. Lett. 103, 266802 (2009)], the conversion efficiency in our structure is noticeably enhanced.     

银纳米线表面等离激元波导的能量损耗

金属纳米结构的表面等离激元可以突破光学衍射极限,为光子器件的微型化和集成光学芯片的实现奠定基础.基于表面等离激元的各种基本光学元件已经研制出来.然而,由于金属结构的固有欧姆损耗以及向衬底的辐射损耗等,表面等离激元的传输能量损耗较大,极大地制约了其在纳米光子器件和回路中的应用.研究能量损耗的影响因素以及如何有效降低能量损耗对未来光子器件的实际应用具有重要意义.本文从纳米线表面等离激元的基本模式出发,介绍了它在不同条件下的场分布和传输特性,在此基础上着重讨论纳米线表面等离激元传输损耗的影响因素和测量方法以及目前常用的降低传输损耗的思路.最后给出总结以及如何进一步降低能量损耗方法的展望.表面等离激元能量损耗的相关研究对于纳米光子器件的设计和集成光子回路的构建有着重要作用.     

Bombardment-induced segregation of Cu in Pt-Cu alloy observed using different energy Auger line combinations

Pt_0.19Cu_0.81 alloy scraped in situ was bombarded by energetic (0.2–2 keV) argon ions and the surface compositions under steady-state bombardment were determined with different energy Auger line combinations. It is found that the outermost surface is enriched in Cu, but that its concentration rapidly decreases to a minimum at the second layer then increases slowly to the bulk value. This fact strongly suggests the existence of a bombardment-induced Gibbsian segregation even at room temperature.The project was supported by the National Natural Science Foundation of China     

载能氢同位素原子与石墨(001)面碰撞的分子动力学研究

采用分子动力学方法研究了载能H同位素原子与石墨晶体碰撞的同位素效应. 碳氢系统的强共价键作用和石墨层间的弱van der Waals力分别用REBO和Ito半经验势函数来描述. 研究发现: 随着入射原子质量的增加, 上表面吸附几率和反射几率的峰值都会向高能区移动; 相比于H, ²H入射原子, ³H入射原子具有较高的吸附几率——包括上表面吸附和内部吸附; 穿透石墨晶体, ²H, ³H原子所需的能量较高; 原子质量和原子入射能量都会影响入射粒子与不同石墨层之间的能量传递过程. 这些结果对理解碳基材料的³H滞留机制有重要意义.     

用并行扫描方法开展的表面等离激元电子能谱成像

本文报道了高定向热解石墨上银纳米结构表面等离激元的电子能谱成像研究. 本文利用现有扫描探针电子能谱仪的角度色散特性,发展了一种多道测量模式. 通过沿一个方向扫描,可以并行获得银纳米结构表面等离激元电子能谱的二维分布. 实验确定的能谱成像空间分辨为80 nm左右.     

Sxaps spectra of pyrolytic graphite as a function of the angle of incidence of the incoming electrons

Soft X-ray appearance potential (SXAPS) spectra of pyrolytic graphite as a function of the angle of incidence of the incoming electrons have been measured to obtain information about surface plasmon excitation. Plasmons can be coupled with a core hole and two slow electrons above the Fermi level or with a fast incoming electron. In the last case angular dependent plasmon excitation can be observed. Coupling with the fast incoming electron is observed, but band structure effects cannot be neglected to explain the observed structure. Measurements were performed on clean and hydrogen-contaminated pyrolytic graphite. A signal increase over the whole spectrum was observed after hydrogen contamination, probably due to a rearrangement of the surface lattice structure. Bombardment of the surface with electrons of 2 keV gave a decrease in spectral intensity probably due to surface damage.