Development of a miniature STM holder for study of electronic conductance of metal nanowires in UHV-TEM

A new miniature scanning tunneling microscope (STM) holder was developed in order to simultaneously investigate electronic conductance and structure of nanowires in an ultra high-vacuum electron microscope (UHV-TEM). A thin gold wire held between the STM tip and substrate stage of the specimen holder was stretched to form a suspended gold nanowire. The new TEM-STM system allowed us to measure electronic conductance at intervals of 20 ms, and to record high-resolution TEM images on videotape at 30 fps. Suspended gold nanowires formed from [1 1 0] oriented electrodes were well-elongated. In contrast, [1 0 0] and [1 1 1] electrodes produced nanowires with short necks. Electronic conductance was found to change as nanowire structure changed, with conductance quantization in units of 2e²/h, where e is the electron charge and h is Planck’s constant, only being exhibited for well-elongated nanowires.     

Electric conductance of metal nanowires at mechanically controllable break junctions under electrochemical potential control

We have developed the mechanically controllable break junction setup with an electrochemical cell (EC-MCBJ) to measure the electric conductance of metal nanowires under electrochemical potential control. The electric conductance of Au nanowires was investigated in 0.1 M Na₂SO₄ solution using EC-MCBJ. The conductance of the Au nanowires was quantized in units of G₀ (=2e²/h), showing clear features in the conductance histogram. The atomic contact with a specific conductance value was kept for >5 s, indicating the relatively high stability of the present EC-MCBJ system.     

Quantum interference effects in a multi-driven transition Fg = 3 ↔ Fe = 2

We calculated and studied the quantum coherence effects of a degenerate transition F_g = 3 ↔ F_e = 2 system interacting with a weak linearly polarized (with σ_± components) probe light and a strong linearly polarized (with σ_± components) coupling field. Due to the competition between the drive Rabi frequency and the Zeeman splitting, electromagnetically induced transparency (EIT) and electromagnetically induced absorption (EIA) are appeared at the different values of applied magnetic field in both cases that the Zeeman splitting of excited state Δe is smaller than the Zeeman splitting of ground state Δg (i.e., Δe < Δg) and Δe > Δg. It is shown that the resonance is broader and contrasts are higher for Δe < Δg than that for Δe > Δg at the same Rabi frequencies of probe and coupling fields.     

Unified path integral treatment for generalized Hulthén and Woods-Saxon potentials

A rigorous path integral discussion of the s states for a diatomic molecule potential with varying shape, which generalizes the Hulthén and the Woods-Saxon potentials, is presented. A closed form of the Green’s function is obtained for different shapes of this potential. For λ ? 1 and (1/η)lnλ<r<∞, the energy spectrum and the normalized wave functions of the bound states are derived. When the deformation parameter λ is 0 < λ < 1 or λ < 0, it is found that the quantization conditions are transcendental equations that require numerical solutions. The special cases corresponding to a screened potential (λ = 1), the deformed Woods-Saxon potential (λ = q e^ηR), and the Morse potential (λ = 0) are likewise treated.     

Characteristics of quantum conductance in a quasi-one-dimension quantum wire containing cavity structures

Quantum-mechanical calculations of the conductance for model devices, consisting of dual semi-infinite quantum wires connected in series by a cavity, are carried out with use of the coupled-mode transfer method and mode matching technique. The effects of the mode-mode coupling and geometry-induced scattering on the quantum conductance are in detail studied by varying the geometric structure of the cavity. There are no traces of quantization conductance. The pattern of the conductance displays many peaks and dips. The threshold energy of the first onset of the conductance is lower than the normal value for opening the propagation channel of the lowest subband in the quantum wire. The overall character of the conductance exhibits heavy fluctuations around the classical conductance for the relevant point contact. The fluctuation amplitude is of order of 2e ²/h, similar to universal conductance fluctuations. The oscillatory structure becomes rich and dense as the scale of the cavity increases. There is a global trend for the conductance to rise as the cavity is compressed. The structures of resonant peaks and antiresonance dips in the conductance are originated from the mode coupling among the subbands in the cavity and quantum wires. The heavy conductance fluctuation may be caused by the quantum interference of the electron waves due to the multiple scattering (reflections) of electrons by the cavity boundaries.     

Electron spin resonance and Rashba field in GaN-based materials

We discuss problem of Rashba field in bulk GaN and in GaN/Al_xGa_1−xN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in the literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 G, α_BIA<4×10⁻¹³ eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/Al_xGa_1−xN heterostructures originates from properties of the interface.     

Semiconductor artificial graphene: Effects in weak magnetic fields

Two-dimensional quantum transport through the stripe of the hexagonal lattice of antidots built in the multimode channel in the GaAs/AlGaAs structure has been studied numerically. It has been found that the low perpendicular magnetic fields (～3 mT) suppress the bulk currents and cause the appearance of the edge Landau states and high positive magnetic resistance on both sides of the Dirac point. Tamm edge states are present in some energy intervals; as a result, the 4e ²/h-amplitude oscillations caused by the quantization of these states on the lattice length are added to the steps of the conductance quantization G _n = (2|n| + 1)2e ²/h.     

The influence of pre-adsorbed water on adsorption of methane on fumed and nanoporous silicas

Co-adsorption of water and methane onto fumed (A-300, A-380) and micro/mesoporous (Gasil 200DF) silicas was studied. FTIR and ¹H NMR spectroscopy with layer-by-layer freezing-out of bound water were used at different levels of hydration (h = 0.005-1.0 g of water per gram of silica). Methane adsorption was largest (1-2 wt% at T < 280 K) for nanosilica A-300 (S_BET = 337 m²/g) at hydration h = 0.1 g of water per gram of silica for a non-equilibrated system. This sample was characterised by a large amount of weakly associated water (δ_H ≈ 1 ppm), and maximal clustering of all bound water. These conditions provide the increased microporosity necessary for enhanced methane adsorption. Heating and subsequent wetting, or long equilibration of nanosilica, decreased the adsorption of methane. The adsorption of methane on silica 200DF decreased with increasing amounts of pre-adsorbed water, characterised by significant associativity (δ_H ≈ 5 ppm) at h ≥ 0.005 g/g.     

Mechanical fabrication of metal nano-contacts showing conductance quantization under electrochemical potential control

We have mechanically fabricated Ni and Cu nano-constrictions in solution to study their quantized conductance behavior under electrochemical potential control. Conductance quantization was observed at both metals in solution at room temperature for the first time. The conductance of Cu nano-constriction was quantized in units of G₀(=2e²/h). A sharp 1G₀ peak was observed in the conductance histogram. For Ni, a rather broad peak at 1–1.5G₀ was observed in the histogram. The conductance quantization behavior was discussed by comparing previously documented results of nano-constrictions fabricated in air or ultra-high vacuum conditions, with those fabricated in solution.     

Controlled Stark shifts in Er-doped crystalline and amorphous waveguides for quantum state storage

We present measurements of the linear Stark effect on the ⁴I_15/2 → ⁴I_13/2 transition in an Er³⁺-doped proton-exchanged LiNbO₃ crystalline waveguide and an Er³⁺-doped silicate fiber. The measurements were made using spectral hole burning techniques at temperatures below 4 K. We measured an effective Stark coefficient (Δμ_eχ)/(h) = 25 ± 1 kHz/V cm⁻¹ in the crystalline waveguide and  kHz/V cm⁻¹ in the silicate fiber. These results confirm the potential of erbium-doped waveguides for quantum state storage based on controlled reversible inhomogeneous broadening.     

Thermally stimulated current study of electron-irradiation induced defects in semi-insulating InP obtained by multiple-step wafer annealing

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5×10¹⁵ to 2.5×10¹⁵ cm⁻³, which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) method. New traps, e₁, e₂, e₃, e₄ and e₅, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46 eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e₁ and e₅ produced by the irradiation with electron doses above 1×10¹⁵ cm⁻² were linked to In_P and P_In antisite defects, respectively, that probably form complexes. Traps e₃ and e₄ produced by the irradiation with doses above 1×10¹⁴ cm⁻² were associated with In and P vacancy related defects, respectively.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Observation of nonstationary effects in saturation spectroscopy

We have studied the nonstationary effects in saturated absorption spectroscopy of the ⁸⁷Rb D₂ line. Varying the size of the σ⁺ polarized pump laser beam, we observed saturated absorption spectra for the σ^± polarized probe beam. For equal polarizations of the pump and probe beams, we found that the resonance signal for the F_g = 1 → F_e = 2 line, and the crossover lines between F_g = 1 → F_e = 2 and F_g = 1 → F_e = 1 (and 0) lines increased to a greater extent than the others. This observation can be understood from the calculated time evolution of the populations of the ground-state sublevels by means of a rate equation model. We also compared experimental data for other conditions with the calculated results. We found good agreement between the calculated results and the data.     

Single electron charging in parallel coupled quantum dots

We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. At low interdot tunnel coupling we find that the conductance measured through one dot is sensitive to the charge state of the neighboring dot. At larger interdot coupling the conductance data reflect the role of quantum charge fluctuations between the dots. As the interdot conductance approaches 2e²/h, the coupled dots behave as a single large dot.     

Magnetic-field-driven quantum critical behavior in graphite and bismuth

We study magnetotransport properties of graphite and rhombohedral bismuth samples and found that in both materials applied magnetic field induces the metal-insulator- (MIT) and reentrant insulator-metal-type (IMT) transformations. The corresponding transition boundaries plotted on the magnetic field-temperature (B − T) plane nearly coincide for these semimetals and can be best described by power laws T ∼ (B − B_c)^κ, where B_c is a critical field at T = 0 and κ = 0.45 ± 0.05. We show that insulator-metal-insulator (I-M-I) transformations take place in the Landau level quantization regime and illustrate how the IMT in quasi-3D graphite transforms into a cascade of I-M-I transitions, related to the quantum Hall effect in quasi-2D graphite samples. We discuss the possible coupling of superconducting and excitonic correlations with the observed phenomena, as well as signatures of quantum phase transitions associated with the M-I and I-M transformations.     

Quantitative relation between the thermionic contrast of metal surfaces and their degree of monocrystallization

For better understanding the peculiarities of work function, a simple model is devised to calculate the effective work functions (?⁺ and ?^e) for positive-ionic and electronic emissions from polycrystalline surfaces, which have a work function range from the maximum (?_max) to the minimum (?_min). Analysis of the theoretical results thus obtained and also of experimental data published to date enables us to find the quantitative relation between the thermionic contrast (Δ?^* ≡ ?⁺ − ?^e) and the degree of monocrystallization (δ_m), thereby yielding the three formulae of (1) Δ?^* = c for 0 < δ_m ? 1/2 (polycrystal), (2) Δ?^* = 4 cδ_m (1 − δ_m) for l/2 ? δ_m ? 1 (polycrystal), and (3) Δ?^* = 0 for δ_m = 1 (monocrystal). For a given surface consisting of a number of patchy faces (i), δ_m corresponds to the largest among its fractional surface areas (F_i) having different values of local work function (?_i). In a typical case of tungsten, the constant of c is evaluated theoretically to be 0.53 ± 0.09 eV, which well agrees with 0.59 ± 0.06 eV determined experimentally by many workers and also which satisfies the essential condition of Δ?^* ≦ c < ?_max − ?_min ≈ 0.8-1.0 eV. Our theoretical model is quite simple, but it is very useful for (1) evaluating both ?⁺ and ?^e with an uncertainty of less than ±0.1 eV, (2) finding the quantitative relation between Δ?^* and δ_m for actual surfaces of both poly- and monocrystals, and also (3) getting a substantial clue as to the problem how the effective work functions are governed by the surface characteristics of both F_i and ?_i.     

Effects of the intra-site Coulomb interaction on electron transport in an atom bridge

The effects of the intra-site Coulomb interaction on the electron transport in an atom-sized bridge (an atom bridge) between a metal surface and a tip of a scanning tunneling microscope are investigated with the aid of the Hubbard Hamiltonian. The second-order self-energy with respect to the Coulomb interaction in a single site approximation is taken into account in calculating for the conductance of the bridge. We examine the conductance variation as a function of the stretching length of the bridge in the case where an electron-hole symmetry is broken and two types of the conductance jumps roughly in units of 2e²/h and 4e²/h exist. Numerical results show that a valley structure and a quasi-plateau appear at the upper side of the conductance jumps roughly in units of 4e²/h at low temperatures and at high temperatures, respectively. On the other hand, the reduction of the conductance is small and monotonic at the conductance jumps roughly in units of 2e²/h.     

Orbital magnetization in semiconductors

This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2--10^-1 effective Bohr magneton and 10^-1--1 e²/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.     

Heat capacities of the electron acceptor 7,7,8,8-tetracyano- quinodimethane (TCNQ) and its radical-ion salt NH4(TCNQ) showing spin-Peierls transition

Heat capacities of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its radical-ion salt NH₄-TCNQ have been measured at temperatures in the 12-350 K range by adiabatic calorimetry. A λ-type heat capacity anomaly arising from a spin-Peierls (SP) transition was found at 301.3 K in NH₄-TCNQ. The enthalpy and entropy of transition are Δ_trsH=(667±7) J mol⁻¹ and Δ_trsS=(2.19±0.02) J K⁻¹ mol⁻¹, respectively. The SP transition is characterized by a cooperative coupling between the spin and the phonon systems. By assuming a uniform one-dimensional antiferromagnetic (AF) Heisenberg chains consisting of quantum spin (S=1/2) in the high-temperature phase and an alternating AF nonuniform chains in the low-temperature phase, we estimated the magnetic contribution to the entropy as Δ_trsS_mag=0.61 J K⁻¹ mol⁻¹ and the lattice contribution as Δ_trsS_lat=1.58 J K⁻¹ mol⁻¹. Although the total magnetic entropy expected for the present compound is R ln 2 (=5.76 J K⁻¹ mol⁻¹), a majority of the magnetic entropy (∼4.6 J K⁻¹ mol⁻¹) persists in the high-temperature phase as a short-range-order effect. The present thermodynamic investigation quantitatively revealed the roles played by the spin and the phonon at the SP transition. Standard thermodynamic functions of both compounds have also been determined.     

0.7 structure in long quantum wires

While quantized conductance steps in short quantum wires are understood through a single electron picture, additional structure often observed in high-quality one-dimensional systems near g=0.7×(2e²/h) is commonly interpreted as arising due to many-body interactions. Most studies of conductance structure below 2e²/h use short one-dimensional wires where transport is known to be ballistic. We report transport measurements for both short (0.5 μm) and long (5 μm) quantum wires, and use both conductance and nonlinear transport to explore the behavior of one-dimensional wires.