Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Surface alloying and anomalous diffusion of Bi on Cu(1 1 1)

We have used Low-Energy Electron Microscopy (LEEM) to study the formation and structure of the surface alloy of Bi on the Cu(1 1 1) surface. As a function of Bi coverage we find a progression from a dilute surface alloy to a structure, which coexists with a Bi overlayer when the Bi coverage exceeds 1/3 ML. At a temperature of 401 K, an unusual formation of alloy domains is observed. The origin of this effect is traced down to the mobility of Bi adatoms, which is found to strongly depend on the Bi coverage of the surface alloy on which they reside.     

Photoelectron spectroscopy study of Pb/Ag(1 1 1) in the submonolayer range

The vacuum deposition of Pb onto Ag(1 1 1) gives rise to two different surface structures depending on coverage and deposition temperature. At room temperature (RT), low energy electron diffraction (LEED) reveals a sharp reconstruction completed at 1/3 Pb monolayer (ML). Beyond, a close-packed Pb(1 1 1) incommensurate overlayer develops. At low temperature (LT, ∼100 K) the incommensurate structure is directly observed whatever the coverage, corresponding to the growth of close-packed two-dimensional Pb(1 1 1) islands. Synchrotron radiation Pb 5d core-level spectra clearly demonstrate that in each surface structure all Pb atoms have essentially a unique, but different, environment. This reflects the surface alloy formation between the two immiscible metals in the reconstruction and a clear signature of the de-alloying process at RT beyond 1/3 ML coverage.     

Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface

The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along is larger than along . The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along and are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.     

Aromatic interactions in the close packing of phenyl-imides at Cu(1 1 0) surfaces

The oxidation of aniline at Cu(1 1 0) surfaces at 290 K has been studied by XPS and STM. A single chemisorbed product, assigned to a phenyl imide (C₆H₅N(a)), is formed together with water which desorbs. Reaction with preadsorbed oxygen results in a maximum surface concentration of phenyl imide of 2.8 × 10¹⁴ mol cm⁻² and a surface dominated by domains of three structures described by , and unit meshes. However, concentrations of phenyl imide of up to 3.3 × 10¹⁴ mol cm⁻² were obtained from the coadsorption of aniline and dioxygen (300:1 mixture) resulting in a highly ordered biphasic structure with and domains. Comparison of the STM and XPS data shows that only half the phenyl imides at the surface are imaged. Pi-stacking of the phenyl rings is proposed to account for this observation.     

Growth of well-aligned Bi nanowire on Ag(1 1 1)

We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along direction and align with the directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy.     

Au-induced nanofaceting and the stoichiometry of the Si(7 7 5)-Au surface

The Au-induced changes in the surface morphology of a Si(1 1 1) sample miscut 8° towards have been measured using room temperature scanning tunneling microscopy and low energy electron diffraction. Au coverages of less than 0.06 ML up to 0.43 ML have been investigated. In all cases Au adsorption produces dramatic changes in surface morphology. The Au-induced surface exhibits nanofacets with orientations that depend critically on the amount of Au deposited. Below 0.32 ML, the restructured surface always includes (7 7 5)-Au nanofacets suggesting that the (7 7 5)-Au facet is energetically preferred on this surface. The (7 7 5)-Au facet is oriented 8.5° from [1 1 1] towards and is characterized by 1-d chains spaced 21.3 Å apart that run along the direction. By maximizing the surface area of the (7 7 5) facets and optimizing the associated diffraction pattern we determine that the (7 7 5)-Au reconstruction is optimized at 0.24 ML and corresponds to a stoichiometry of 1.5 Au atoms per 1 × 1 unit cell. We believe that the local Au coverage on the (7 7 5) facet is 0.24 ML, and that the deficit/extra of Au at any particular coverage is accommodated by non-(7 7 5) facets. For example at 0.06 ML the regions of step bunching observed on the clean surface are eliminated and Au-induced (7 7 5) and Au-free (1 1 1)7 × 7 facets are already visible. Up to 0.18 ML the non-(7 7 5) facet is Au free. Beyond 0.32 ML, the (7 7 5)-Au reconstruction is no longer stable and the extra Au is accommodated by the formation of higher angle facets with smaller chain spacings.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

STM study of l-serine adsorption on Cu(0 0 1)

The adsorption of l-serine on Cu(0 0 1) surface at 310 K was studied by scanning tunneling microscope (STM). l-serine molecules on the Cu(0 0 1) initially formed a domain of thick lines with a order structure along the direction on the terraces regardless of the coverage of serine. The thick lines were partly replaced by thin line along the direction, and completely disappeared in 2 h. It is considered that in these structures hydrogen bonds involved in hydroxymethyl group between adsorbates play some role in addition to intermolecular hydrogen bond between a hydrogen atom of amino group and an oxygen atom of carboxy group for alanine adsorption.     

Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

Modelling of phase transitions and reaction at CO adsorption on oxygen precovered Pd(1 1 1)

Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO₂ reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)_O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)_O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.     

The local adsorption geometry and electronic structure of alanine on Cu{1 1 0}

The adsorption of alanine on Cu{1 1 0} was studied by a combination of near edge X-ray absorption fine structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT). Large chemical shifts in the C 1s, N 1s, and O 1s XP spectra were found between the alanine multilayer and the chemisorbed and pseudo-(3 × 2) alaninate layers. From C, N, and O K-shell NEXAFS spectra the tilt angles of the carboxylate group (≈26° in plane with respect to and ≈45° out of plane) and the C-N bond angle with respect to could be determined for the pseudo-(3 × 2) overlayer. Using this information three adsorption geometries could be eliminated from five p(3 × 2) structures which lead to almost identical heats of adsorption in the DFT calculations between 1.40 and 1.47 eV/molecule. Due to the small energy difference between the remaining two structures it is not unlikely that these coexist on the surface at room temperature.     

Ge adsorption on SiC(0 0 0 1): An ab initio study

In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.     

Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

One-dimensional defects in iodine adlayers on Pt(1 0 0)

One-dimensional defect structures of closed-packed adlayers of iodine on Pt(1 0 0) were studied with scanning tunneling microscopy (STM). On the terraces of the Pt(1 0 0) surface we observed rotational domains with line defects running in [0 1 0] directions, in coexistence with nearly defect-free domains. In addition to these prevailing line defects (A-defects) with a local coverage lower than that of a defect-free surface, we report on much less frequently observed line defects with higher local coverages (B- and C-defects). The strong dependence of the concentration of these defects on the adsorption temperature is governed by the decrease of the overall iodine coverage with increasing temperature. Iodine adsorption at ∼1100 K leads to self-organization of A-defects in quasi-periodic arrangements. The relevance of these defects as important structural elements of commensurate superstructures of iodine on Pt(1 0 0) is stressed.