Structural evolution of sulfur overlayers on Pd(1 1 1)

Low energy ion scattering spectroscopy (LEISS) has been used to characterize the evolution of ordered structures of S on the Pd(1 1 1) surface during annealing. During exposure of the Pd(1 1 1) surface to 0.7 L H₂S at 300 K—conditions that produce the S(√3 × √3)R30 overlayer—the intensity of the Pd LEIS signal decreases and a feature assigned to adsorbed S appears as the adsorbed layer forms. When the surface is held at 300 K after exposure to H₂S is stopped, the LEIS Pd intensity partially recovers and the S signal weakens, presumably as surface S atoms assume their equilibrium positions in the S(√3 × √3)R30 overlayer. Subsequent annealing of the S(√3 × √3)R30 structure at 700 K causes it to convert into a S(√7 × √7)R19 overlayer, whose LEIS spectrum is identical to that of clean Pd(1 1 1). The absence of LEIS evidence for S atoms at the exposed surface of the S(√7 × √7)R19 overlayer is at odds with published models of a mixed Pd-S top layer. Despite the similarity of the LEIS spectra of Pd(1 1 1) and Pd(1 1 1)-S(√7 × √7)R19, their activities for dissociative hydrogen adsorption are very different—the former readily adsorbs hydrogen at 100 K, while the latter does not—suggesting that S exerts its influence on surface chemistry from subsurface locations.     

Deactivation of Pd particles supported on Nb2O5/Cu3Au(1 0 0): SFG and TPD studies from UHV to 100 mbar

Structural changes that occur on Pd-Nb₂O₅/Cu₃Au(1 0 0) model catalysts upon thermal annealing were followed by sum frequency generation (SFG) and temperature-programmed desorption (TPD) using CO as probe molecule. SFG experiments were performed both under ultrahigh vacuum and mbar pressure. Heating the catalyst to temperatures above 300 K lead to an irreversible 50% decrease in the CO adsorption capacity and modified the remaining adsorption sites. Alterations of the phase between resonant and non-resonant SFG signals upon annealing indicate a change in the electronic structure of the surface, which excludes Pd sintering or migration of Nb₂O₅ over Pd particles to cause the observed effect and rather suggests the formation of “mixed Pd-NbO_x” sites. The same changes in surface properties also occur during CO hydrogenation at 1 bar and high temperature, pointing to an involvement of “mixed Pd-NbO_x” sites in catalytic reactions.     

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Surface (electro-)chemistry on Pt(1 1 1) modified by a Pseudomorphic Pd monolayer

The formic acid and methanol oxidation reaction are studied on Pt(1 1 1) modified by a pseudomorphic Pd monolayer (denoted hereafter as the Pt(1 1 1)-Pd_1 ML system) in 0.1 M HClO₄ solution. The results are compared to the bare Pt(1 1 1) surface. The nature of adsorbed intermediates (CO_ad) and the electrocatalytic properties (the onset of CO₂ formation) were studied by FTIR spectroscopy. The results show that Pd has a unique catalytic activity for HCOOH oxidation, with Pd surface atoms being about four times more active than Pt surface atoms at 0.4 V. FTIR spectra reveal that on Pt atoms adsorbed CO is produced from dehydration of HCOOH, whereas no CO adsorbed on Pd can be detected although a high production rate of CO₂ is observed at low potentials. This indicates that the reaction can proceed on Pd at low potentials without the typical “poison” formation. In contrast to its high activity for formic acid oxidation, the Pd film is completely inactive for methanol oxidation. The FTIR spectra show that neither adsorbed CO is formed on the Pd sites nor significant amounts of CO₂ are produced during the electrooxidation of methanol.     

Oxygen-induced p(3 × 1) reconstruction of the W(1 0 0) surface

The oxidation of the W(1 0 0) surface at elevated temperatures has been studied using room temperature STM and LEED. High exposure of the clean surface to O₂ at 1500 K followed by flash-annealing to 2300 K in UHV results in the formation of a novel p(3 × 1) reconstruction, which is imaged by STM as a missing-row structure on the surface. Upon further annealing in UHV, this surface develops a floreted LEED pattern characteristic of twinned microdomains of monoclinic WO_x, while maintaining the p(3 × 1) missing-row structure. Atomically resolved STM images of this surface show a complex domain structure with single and double W〈0 1 0〉 rows coexisting on the surface in different domains.     

Photoemission study of cobalt interaction with the oxidized Si(1 0 0)2 × 1 surface

The interaction of cobalt atoms with an oxidized Si(1 0 0)2 × 1 surface was studied by photoelectron spectroscopy with synchrotron radiation at room and elevated temperatures. The SiO_x layer grown in situ on the crystal surface was ∼0.3 nm thick, and the amount of deposited cobalt was varied within eight atomic layers. It was found that Co atoms could penetrate under the SiO_x layer even at room temperature in the initial growth. As the Co amount increased, a ternary Co-O-Si phase was formed at the interface, followed by a Co-Si solid solution. Silicide synthesis associated with the decomposition of these phases started under the SiO_x layer at ∼250 °C, producing cobalt disilicide with a stable CaF₂-type of structure.     

RAIRS studies of CO adsorption on Pd/CeO2−x(1 1 1)/Pt(1 1 1)

Reflection absorption infrared spectroscopy (RAIRS) has been used to investigate the adsorption of CO on CeO_2−x-supported Pd nanoparticles at room temperature. The results show that when CeO_2−x is initially grown on Pt(1 1 1), a small proportion of the surface remains as bare Pt sites. However, when Pd is deposited onto CeO_2−x/Pt(1 1 1), most of the Pd grows directly on top of the CeO_2−x(1 1 1). RAIR spectra of CO adsorption on 1 ML Pd/CeO_2−x/Pt(1 1 1) show a broad CO-Pd band, which is inconsistent with a single crystal Pd surface. However, the 5 ML and 10 ML Pd/CeO_2−x/Pt(1 1 1) spectra show vibrational bands consistent with the presence of Pd(1 1 1) and (1 0 0) faces, suggesting the growth of Pd nanostructures with well defined facets.     

Surface structure of K/Pd(1 0 0) and the effect of H coadsorption: Density functional theory calculations

We have performed density-functional theory calculations to study the atomic structure of the K/Pd(1 0 0)-p(2 × 2) and -c(2 × 2) surfaces formed at 0.25 ML and 0.5 ML, respectively. We find that K atoms prefer the hollow site with the K adsorption height 2.44 Å for p(2 × 2) and 2.50 Å c(2 × 2). The first interlayer spacing (d₁₂) of the Pd(1 0 0) substrate appears slightly contracted from the bulk value as Δd₁₂ = −0.8% and −0.3% for p(2 × 2) and c(2 × 2), respectively. The calculated contraction Δd₁₂ = −0.3% for c(2 × 2) is not in accord with the expansion Δd₁₂ = +1.3% reported by a low-energy electron diffraction (LEED) study. As the origin of this difference, a possibility of hydrogen contamination of the surface sample used in the LEED study is suggested: Our calculations show that the d₁₂ of K/Pd(1 0 0)-c(2 × 2) increases linearly with the coverage of H coadsorption, which leads to an estimation for the H coverage of the surface sample as 0.1-0.4 ML.     

Surface electronic structure of α-Mo2C(0 0 0 1)

The electronic structure of α-Mo₂C(0 0 0 1) has been investigated by angle-resolved photoemission spectroscopy utilizing synchrotron radiation. A sharp peak is observed at 3.3 eV in normal-emission spectra. Since the peak shows no dispersion as a function of photon energy and is sensitively attenuated by oxygen adsorption, the initial state of the peak is attributed to a surface state. Resonant photoemission study shows that the state includes substantial contribution of 4d orbitals of the Mo atoms in the second layer. The emissions with constant kinetic energies of 22 and 31 eV above the Fermi level (E_F) are found in normal-emission spectra, and these emissions are interpreted as originating from the Mo N₁N₂₃V and N₂₃VV Auger transitions, respectively.     

Sum frequency generation and density functional studies of CO-H interaction and hydrogen bulk dissolution on Pd(1 1 1)

CO-H interaction and H bulk dissolution on Pd(1 1 1) were studied by sum frequency generation (SFG) vibrational spectroscopy and density functional theory (DFT). The theoretical findings are particularly important to rationalize the experimentally observed mutual site blocking of CO and H and the effect of H dissolution on coadsorbate structures. Dissociative hydrogen adsorption on CO-precovered Pd(1 1 1) is impeded due to an activation barrier of ∼2.5 eV for a CO coverage of 0.75 ML, an effect which is maintained down to 0.33 ML CO. Preadsorbed hydrogen prevented CO adsorption at 100 K, while hydrogen was replaced from the surface by CO above 125 K. The temperature-dependent site blocking of hydrogen originates from the onset of hydrogen diffusion into the Pd bulk around 125 K, as shown by SFG and theoretical calculations using various approaches. When Pd(1 1 1) was exposed to 1:1 CO/H₂ mixtures at 100 K, on-top CO was absent in the SFG spectra although hydrogen occupies only threefold hollow sites on Pd(1 1 1). DFT attributes the absence of on-top CO to H atoms diffusing between hollow sites via bridge sites, thereby destabilizing neighboring on-top CO molecules. According to the calculations, the stretching frequency of bridge-bonded CO with a neighboring bridge-bonded hydrogen atom is redshifted by 16 cm⁻¹ when compared to bridging CO on the clean surface. Implications of the observed effects on hydrogenation reactions are discussed and compared to the C₂H₄-H coadsorption system.     

Theoretical studies on the adsorption and decomposition of H2O on Pd(1 1 1) surface

To provide information about the chemistry of water on Pd surfaces, we performed density functional slab model studies on water adsorption and decomposition at Pd(1 1 1) surface. We located transition states of a series of elementary steps and calculated activation energies and rate constants with and without quantum tunneling effect included. Water was found to weakly bind to the Pd surface. Co-adsorbed species OH and O that are derivable from H₂O stabilize the adsorbed water molecules via formation of hydrogen bonds. On the clean surface, the favorable sites are top and bridge for H₂O and OH, respectively. Calculated kinetic parameters indicate that dehydrogenation of water is unlikely on the clean regular Pd(1 1 1) surface. The barrier for the hydrogen abstraction of H₂O at the OH covered surface is approximately 0.2-0.3 eV higher than the value at the clean surface. Similar trend is computed for the hydroxyl group dissociation at H₂O or O covered surfaces. In contrast, the O-H bond breaking of water on oxygen covered Pd surfaces, H₂O_ad + O_ad → 2OH_ad, is predicted to be likely with a barrier of ∼0.3 eV. The reverse reaction, 2OH_ad → H₂O_ad + O_ad, is also found to be very feasible with a barrier of ∼0.1 eV. These results show that on oxygen-covered surfaces production of hydroxyl species is highly likely, supporting previous experimental findings.     

Effect of hydrogenation on the electronic structure of the P/Si(0 0 1)-(1 × 2) surface

Ab initio calculations, based on pseudopotentials and density functional theory (DFT), have been performed to investigate the effect of hydrogenation on the electronic properties of P/Si(0 0 1)-(1 × 2) surface. In parallel with this, the electronic band structure of the hydrogenated and non-hydrogenated P/Si(0 0 1)-(1 × 2) surface have been calculated for half- and full-monolayer P. For the mixed Si-P dimer structure, we have identified two occupied and one unoccupied surface state, which correspond to 0.5 ML coverage of P. When this surface is terminated with H, we see that two occupied states completely disappeared and that one unoccupied state is shifted towards the conduction band. A similar calculations for the 1 ML coverage of P have been also carried out. It is seen that the unoccupied state C₁ appeared in the P/Si(0 0 1)-(1 × 2) surface is passivated when this surface is terminated with the H atoms. To explain the nature of the surface states, we have also plotted the total and partial charge densities at the point of the Surface Brillouin Zone (SBZ).     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen

The initial stages of oxidation of the In-rich InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen (O₂) were studied using scanning tunneling microscopy (STM) and density functional theory (DFT). It was shown that the O₂ dissociatively chemisorbs along the rows in the [1 1 0] direction on the InAs surface either by displacing the row-edge As atoms or by inserting between In atoms on the rows. The dissociative chemisorption is consistent with being autocatalytic: there is a high tendency to form oxygen chemisorption sites which grow in length along the rows in the [1 1 0] direction at preexisting oxygen chemisorption sites. The most common site size is about 21-24 Å in length at ∼25% ML coverage, representing 2-3 unit cell lengths in the [1 1 0] direction (the length of ∼5-6 In atoms on the row). The autocatalysis was confirmed by modeling the site distribution as non-Poisson. The autocatalysis and the low sticking probability (∼10⁻⁴) of O₂ on the InAs(0 0 1)-(4 × 2)/c(8 × 2) are consistent with activated dissociative chemisorption. The results show that is it critical to protect the InAs surface from oxygen during subsequent atomic layer deposition (ALD) or molecular beam epitaxy (MBE) oxide growth since oxygen will displace As atoms.     

The CuGaSe2(0 0 1) surface: A (4 × 1) reconstruction

We report on the formation of a stable (4 × 1) reconstruction of the chalcopyrite CuGaSe₂(0 0 1) surface. Using Ar⁺ ion-bombardment and annealing of epitaxial CuGaSe₂ films grown on GaAs(0 0 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 × 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0 0 1) surfaces of the Cu-III-VI₂(0 0 1) material can show stable, unfacetted surfaces.     

Interaction between chemisorbed N2 and Li promoter atoms: A comparison between the stepped Ru(1 0 9) and the atomically smooth Ru(0 0 1) surfaces

We present a direct side-by-side comparison of the interaction of Li atoms and N₂ molecules on the atomically stepped Ru(1 0 9) single crystal surface and on the atomically smooth Ru(0 0 1) single crystal surface using infrared reflection absorption spectroscopy (IRAS) and temperature programmed desorption (TPD). At low adsorbate coverages there is spectroscopic evidence for the formation of a Li_x(N₂)_y complex on the Ru(1 0 9) surface, whereas no such complex is observed on the Ru(0 0 1) surface. This complex is due to local interactions between an adsorbed Li atom and N₂ adsorbed on the atomic steps of Ru(1 0 9). The short range interaction near the atomic steps is characterized by the development of several highly red-shifted ν(N₂) modes in the region of ∼2130 cm⁻¹ in the IR spectra. Adsorbed N₂ molecules on both Ru(1 0 9) and Ru(0 0 1) also are influenced by the long range electrostatic field produced by Li adsorbate atoms, causing a red shift in the uncomplexed N₂ species, which monotonically increases as the Li coverage in increased. On the Ru(0 0 1) surface, small coverages of N₂ influenced by the long range effect of Li are initially chemisorbed parallel to the surface resulting in the absence of infrared activity. In addition we have also found that Li does not cause N-N bond scission on Ru(0 0 1) below 250 K.     

Molecular dynamics simulation of CH3 interaction with Si(1 0 0) surface

Molecular dynamics simulations of the CH₃ interaction with Si(1 0 0) were performed using the Tersoff-Brenner potential. The H/C ratio obtained from the simulations is in agreement with available experimental data. The results show that H atoms preferentially react with Si. SiH is the dominant form of SiH_x generated. The amount of hydrogen that reacts with silicon is essentially energy-independent. H atoms do not react with adsorbed carbon atoms. The presence of C-H bonds on the surface is due to molecular adsorption.     

Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface

The adsorption of S₂ on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S₂ at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms S_n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuS_x nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface.     

Formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys

The formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys were investigated by X-ray photoelectron spectroscopy (XPS) and by adsorption of CO probe molecules, which was characterized by temperature-programmed desorption (TPD) and high resolution electron energy loss spectroscopy (HREELS). The PdAg/Pd(1 1 1) surface alloys were prepared by annealing (partly) Ag film covered Pd(1 1 1) surfaces, where the Ag films were deposited at room temperature. Surface alloy formation leads to a modification of the electronic properties, evidenced by core-level shifts (CLSs) of both the Pd(3d) and Ag(3d) signal, with the extent of the CLSs depending on both initial Ag coverage and annealing temperature. The role of Ag pre-coverage and annealing temperature on surface alloy formation is elucidated. For a monolayer Ag covered Pd(1 1 1) surface, surface alloy formation starts at ∼450 K, and the resulting surface alloy is stable upon annealing at temperatures between 600 and 800 K. CO TPD and HREELS measurements demonstrate that at 120 K CO is exclusively adsorbed on Pd surface atoms/Pd sites of the bimetallic surfaces, and that the CO adsorption behavior is dominated by geometric ensemble effects, with adsorption on threefold hollow Pd₃ sites being more stable than on Pd₂ bridge sites and finally Pd₁ a-top sites.     

Effect of hydrogenation on B/Si(0 0 1)-(1 × 2)

Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the effect of hydrogenation on the atomic geometries and the energetics of substitutional boron on the generic Si(0 0 1)-(1 × 2) surface. For a single B atom substitution corresponding to 0.5 ML coverage, we have considered two different sites: (i) the mixed Si-B dimer structure and (ii) boron substituting for the second-layer Si to form Si-B back-bond structure, which is energetically more favorable than the mixed Si-B dimer by 0.1 eV/dimer. However, when both of these cases are passivated by hydrogen atoms, the situation is reversed and the Si-B back-bond case becomes 0.1 eV/dimer higher in energy than the mixed Si-B dimer case. For the B incorporation corresponding to 1 ML coverage, among the substitutional cases, 100% interdiffusion into the third layer of Si and 50% interdiffusion into the second layer of Si are energetically similar and more favorable than the other cases that are considered. However, when the surface is passivated with hydrogen, the B atoms energetically prefer to stay at the third layer of the Si substrate.