Micro-photoluminescence study of electron-spin injection in self-assembled semiconductor quantum dots

We present a micro-photoluminescence (m-PL) study of electron-spin injection under magnetic fields in self-assembled semiconductor quantum dots (QDs) of CdSe. A characteristic band line-up of the CdSe QDs coupled with a diluted magnetic semiconductor quantum well (DMS-QW) of ZnCdMnSe through a ZnSe barrier layer enabled us to inject the electron spins from the DMS-QW into QDs. An experimental evidence of the electron-spin injection was provided by observations of circularly polarized m-PL spectra from individual QDs in this coupled QD structure. We find anti-correlation of PL intensity in between the DMS-QW (spin injector) and the individual QDs (spin receiver).     

Growth and characterization of ZnSe/CdSe/ZnSe quantum dots fabricated by using an alternate molecular beam supplying method

ZnSe/CdSe/ZnSe structures inserted CdSe thin layer are fabricated using an alternate molecular beam supply (ALS). Examining the PL peak energy dependence on beam irradiation time in ALS cycle, we studied the initial stage of CdSe growth. When CdSe below the critical thickness is supplied on ZnSe grown on GaAs (1 0 0), two kinds of 2D islands (platelets) appear. We confirmed the alloying of 2D-CdSe islands and 3D-CdSe islands (dots) is prominent under Cd beam irradiation in ALS growth.     

pH-dependent aggregation and photoluminescence behavior of thiol-capped CdTe quantum dots in aqueous solutions

pH-dependent aggregation of thiol-capped CdTe quantum dots (QDs) in solutions was observed with a confocal microscope. The average size of the QD aggregates increased from 28 nm to 1.4 μm as the pH decreased from 12 to 3. The basic condition improved the dispersion of QDs while the acidic condition caused the detachment of surface ligands, leading to the aggregation of QDs. A PL lifetime of 80 ns was detected for QDs at pH from 12 to 7, while it was shortened to 57 and 34 ns at pH 5 and 3, respectively, due to the formation of surface defects.     

Zeeman mapping of exciton localization in self-assembled CdSe quantum dots using diluted magnetic semiconductors

Localization of exciton wavefunctions in self-assembled quantum dots (QDs) has been investigated using CdSe QDs embedded in ZnMnSe. This system was chosen so as to make use of the giant Zeeman splitting in the diluted magnetic semiconductor (DMS) ZnMnSe, which enables one to map how the exciton wavefunction is distributed between the QDs and the surrounding matrix. Two series of CdSe QDs in ZnMnSe were prepared for this investigation by molecular beam epitaxy (MBE), either by varying the CdSe coverage while keeping a constant Mn concentration in ZnMnSe; or by varying the Mn concentration in the matrix while maintaining a constant CdSe coverage. Photoluminescence (PL) experiments show a systematic evolution of the CdSe QDs with increasing CdSe coverage; and also reveal the role of Mn in nucleating (“seeding”) the self-assembly of the QDs. By simultaneously measuring the Zeeman shifts of the PL peaks from both the CdSe QDs and their ZnMnSe matrix, we are able to extract information on exciton localization in the QDs and its dependence on the degree of development of the self-assembled CdSe QDs with increasing CdSe coverage.     

One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.     

Photoluminescence spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532-nm laser radiation and gamma-rays

We have investigated temporal behavior of the photoluminescence (PL) spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532 nm laser radiation and gamma-rays. Under ∼100 W/cm² laser radiation, the PL intensity (I_PL) increases with irradiation time upto about 500 s and thereafter declines linearly. The wavelength of the PL emission (λ_peak) exhibits a blue-shift with exposure time. Upon simultaneous irradiation by 100 W/cm² 532-nm laser, as well as 0.57 and 1.06 MeV gamma-rays, the temporal behaviors of both I_PL and λ_peak are significantly different; I_PL increases to a saturation level, and the magnitude of the blue-shift in λ_peak is reduced. We discuss possible mechanisms underlying these results.     

Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots

We identify fundamental mechanisms of electron and hole dynamics in self-organized InAs/GaAs quantum dots (QDs) subject to vertical electric fields by photocurrent investigations. We propose a spin–flip mechanism involving a spin exchange between neighboring QDs. The spin–flip process is revealed in the photocurrent dynamics when the exciton population increases unexpectedly with reverse bias.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.     

Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states.     

Growth and optical characterization of single quantum well structure of submonolayer ZnS/ZnTe

Single quantum wells of submonolayer ZnS/ZnTe were grown between ZnTe layers using hot wall epitaxy method with fast-movable substrate configuration. As ZnS well widths decrease from 1 to 0.15 monolayer, the photoluminescence peaks shift to higher energies from 2.049 to 2.306 eV, and the photoluminescence intensities increase. As ZnS well width decrease, the PL spectra show the lower-energy tails and consequently the increased PL FWHMs. This is a result of a convolution of two PL peaks from two-dimensional and zero-dimensional quantum islands, supported by a still lived lower-energy peaks of zero-dimensional quantum islands above 50 K. The energy shift in the power dependence of photoluminescence spectra is proportional to the third root of the excitation density. These behaviors can be described by the formation of submonolayer type-II ZnS/ZnTe quantum well structure, and the coexistence of two-dimensional and one-dimensional islands in ZnS layers.     

The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots

In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116 W cm⁻² to 9 W cm⁻².     

Effect of ZnS shell on the Raman spectra from CdSe nanorods

We investigated the influence of an epitaxially grown ZnS shell on the phonon spectra of CdSe nanorods of different sizes. The CdSe related Raman peaks shift with addition of a ZnS shell. The longitudinal optical phonon shifts slightly due to strain and the low‐energy shoulder shifts stronger, which can be explained within a model for surface optical phonons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures

The transparency, reflection and luminescence spectra of In_0.3Ga_0.7As structures with 8 nm thickness and quantum wells limited by the barrier layer GaAs of a 9 nm (upper layer) and 100 nm (bottom layer) thickness had been studied in the region of photon energy 0.5–1.6 eV. Lines associated with the transitions hh,lh1-e1(1s,2s,3s), hh2,lh2-e2(1s,2s,3s), hh1,lh1-e2(1s) and hh3,lh3-e3(1s) had been revealed in reflection spectra. The shapes of the reflection and transparency lines had been calculated using a single oscillator model of dispersion relations and the Kramers–Kronig integrals. The binding energy of hh,lh1-e1 excitons, the effective mass m_hh^∗ and m_lh^∗ and the damping factor for the optical transitions to QW and QD had been determined. The lifetime of charge carriers on quantum dots varies in the range of 0.04–0.1 ps, while the radiative lifetime of excitons in quantum wells in the considered structure is around 2 ps.     

Chemical role of amines in the colloidal synthesis of CdSe quantum dots and their luminescence properties

The role of organic amines in the colloidal synthesis of CdSe quantum dots (QDs) has been studied. CdSe QDs were synthesized from the source solutions containing 5 vol% of amines having various alkyl chain lengths, stereochemical sizes and electron donation abilities. The role of the additional amines was evaluated on the basis of the photoluminescence (PL) properties such as PL wavelength and intensity of the obtained CdSe QDs. The observed PL spectra were explained by the fact that the amines behaved as capping ligands on the surface of the QDs in the product colloidal solution and complex ligands for cadmium in the source solutions. It was shown that the particle size was controlled by the diffusion process depending on the mass and stereochemical shape of the amines, and the luminescence intensity increased with the increasing electron donation ability and capping density of the amines.     

Temperature-induced line broadening, line narrowing and line shift in the luminescence of nanocrystalline ZnS:Mn

Emission spectra of nanocrystalline ZnS:Mn²⁺ have been recorded as a function of temperature between 4 and . For the two emission bands observed (a defect-related emission band around and a Mn²⁺-related emission band around ), the temperature dependence of the width and the position of the emission bands has been analyzed. The shift and the broadening of the Mn²⁺ emission can be satisfactorily explained by theoretical models and parameters for electron-phonon coupling that are similar to those for bulk ZnS. For the defect-related emission, the shift to lower energies follows the decrease in bandgap of bulk ZnS with increasing temperature. The width of the defect-related emission decreases as the temperature is raised. This anomalous behavior is explained by inhomogeneous broadening at low temperatures.     

Giant optical anisotropy in M-plane GaN/AlGaN quantum wells due to crystal-field effect

The optical polarization of GaN/AlGaN wurtzite quantum wells in various orientations is studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e., the -oriented layer plane) GaN/Al_0.2Ga_0.8N quantum well, due to the positive crystal-field split energy effect (ΔCR>0). The present theoretical results are consistent with the photoluminescence measurements presented in the literature [B. Rau, et al., Appl. Phys. Lett. 77 (2000) 3343].     

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

This study investigates the optical anisotropy spectrum in the R-plane (i.e., the -oriented layer plane) of GaN/Al_0.2Ga_0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in -oriented GaN/Al_0.2Ga_0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x^′-polarization to y^′-polarization as the well width increases.     

Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

Self-assembled InAs quantum dots (QDs) with high-density were grown on GaAs(0 0 1) substrates by antimony (Sb)-mediated molecular beam epitaxy technique using GaAsSb/GaAs buffer layer and InAsSb wetting layer (WL). In this Sb-mediated growth, many two-dimensional (2D) small islands were formed on those WL surfaces. These 2D islands provide high step density and suppress surface migration. As the results, high-density InAs QDs were achieved, and photoluminescence (PL) intensity increased. Furthermore, by introducing GaAsSb capping layer (CL), higher PL intensity at room temperature was obtained as compared with that InGaAs CL.