Spectroscopy of silver complexes in solutions of inorganic compounds

The absorption, photoluminescence, and photoexcitation spectra of a number of inorganic solid solutions with a silver ion impurity have been examined. The influence of the temperature on the spectral characteristics of haloid and oxygen-containing solutions activated with Ag⁺ ions has been investigated. The temperature dependences of the luminescence quantum yield of solid solutions with Ag⁺ impurity in the temperature range 77-150 K have been studied. It is shown that the spectra under observation are conditioned by electron transition between energetic levels of Ag⁺ ion which are deformed because of the interaction with environment.     

Low-temperature photoluminescence spectra of highly excited quantum wires

Optical spectra of highly excited quantum wires at low temperatures have been studied within the dynamical screening approximation. We found a strong Fermi-edge singularity (FES) in the photoluminescence spectra. The spectral shape and FES intensity strongly depend on temperature in agreement with recent experimental results.     

Synthesis and photoluminescence of CeO2:Eu phosphor powders

The crystalline structure and photoluminescence (PL) properties of europium-doped cerium dioxide synthesized by the solid-state reaction method were analyzed. CeO₂:Eu³⁺ phosphor powders exhibit the pure cubic fluorite phase up to 10 mol% doping concentration of Eu³⁺. With indirect excitation of CeO₂ host at 373 nm, the PL intensity quickly increases with increasing Eu³⁺ concentration, up to about 1 mol%, and then decreases indicating the concentration quenching. While with direct excitation (467 nm), much more stronger PL emissions, especially the electric dipole emission ⁵D₀-⁷F₂ at 612 nm, are observed and no concentration quenching occurs up to 10 mol% doping concentration of Eu³⁺. The nature of this behavior and the cause of the concentration quenching were discussed.     

Room temperature photoluminescence from Zr-doped sol-gel silica

Intense room-temperature photoluminescence (PL) from the UV to the green region was observed from Zr⁴⁺-doped silica synthesized by a sol-gel process using tetraethoxysilane as the precursor, followed by thermal treatment at 500 °C in air. The wide PL band can be resolved into three components centered at 3.70, 3.25, and 2.65 eV, respectively. The intensity of the 3.25 and 2.65 eV PL bands was greatly enhanced compared with pure sol-gel silica. The 3.70 eV emission was assigned to non-bridging oxygen hole centers, while the 2.65 eV one originated from neutral oxygen vacancies (V_O). The 3.25 eV PL band was most likely associated with E′ centers, as supported by electron spin resonance measurement. It was proposed that the Zr⁴⁺-doping leads to oxygen deficiency in the silica, thus resulting in enhancement of the density of V_O and E′ center defects.     

Dominant ultraviolet-blue photoluminescence of ZnO embedded into synthetic opal

The temperature-dependent photoluminescence (PL) characteristics of zinc oxide (ZnO) embedded into the voids of synthetic opal were studied. ZnO was infiltrated into opal from aqueous solution with zinc nitrate precursor followed by thermal annealing. The PL spectra of the ZnO powder exhibit very high and broad emission peaks in the green region due to crystal defects, such as oxygen vacancies and zinc ion interstitials. In contrast to the PL spectra of ZnO powder, nanocrystals of ZnO embedded into the voids of FCC packed opal matrix exhibit dominant ultraviolet (UV)-blue and rapidly decreasing green PL emissions with decreasing temperature. The temperature-dependent PL characteristics show that the green band suppression in the ZnO nanocrystals is due to the influence of photonic crystal. The infiltration of nanoparticles into synthetic opal may be used for the fabrication of polycrystalline ZnO with dominant UV-blue PL. These results indicate that the luminescent materials embedded into photonic crystal may be promising for the fabrication of the RGB pixels in full-color displays.     

Raman and photoluminescence spectroscopy of zinc tungstate powders

ZnWO₄ powders, synthesized using co-precipitation technique and annealed in air at different temperatures in the range of 80-, were studied by Raman and photoluminescence spectroscopy. ZnWO₄ single crystal was used for comparison. The interpretation of the observed variations of the Raman spectra and intrinsic photoluminescence band upon annealing is suggested.     

Energy transfer and upconversion luminescence in Tm/Yb co-doped lanthanum-zinc-lead-tellurite glasses

A series of Tm³⁺/Yb³⁺ co-doped lanthanum-zinc-lead-tellurite (TPZL) glasses pumped by a 980 nm laser diode (LD) were demonstrated to obtain a high efficiency of infrared-to-visible upconversion. Effects of PbO content on the thermal stability, structure and upconversion properties of Tm³⁺/Yb³⁺ co-doped TPZL glasses had been investigated. The efficient visible upconversion fluorescences corresponding to the ¹G₄→³H₆, ¹G₄→³F₄ and ³H₄→³H₆ transitions of Tm³⁺ were observed under 980 nm excitation. The upconversion intensities of blue, red and near infrared emissions in Tm³⁺/Yb³⁺ co-doped TPZL glasses were obviously enhanced with increasing PbO content. The dependence of upconversion intensities on excitation power and the possible upconversion mechanisms had been evaluated by a proper rate equation model. Population density in different levels and coefficients of the energy transfer rate C_Di (i=2, 4, 6) between Tm³⁺ and Yb³⁺ were estimated by fitting the simulated curves to the measured ones. The obtained three energy transfer coefficients C_D2, C_D4, and C_D6 were determined to be 5.7×10⁻¹⁷, 1.3×10⁻¹⁶ and 8.6×10⁻¹⁷ cm³/s, respectively.     

Photoluminescence investigations of Zn2SiO4 co-doped with Eu and Tb ions

Zinc silicate phosphors co-doped with Eu³⁺ ions and also with both Eu³⁺ and Tb³⁺ ions were prepared by high temperature solid state reaction in air or reducing atmosphere. The luminescence characteristics of the prepared phosphors were investigated. While in the samples prepared in air, Eu³⁺ emission was found to be dominant over Tb³⁺ emission, in the samples prepared in reducing atmosphere, intense Eu²⁺ emission at 448 nm was found to be predominant over narrow Tb³⁺ emission. Luminescence studies showed that Eu³⁺ ions occupy asymmetric sites in Zn₂SiO₄ lattice. The intense f-f absorption peak of Eu³⁺ at 395 nm observed in these phosphors suggests their potential as red emitting phosphors for near ultra-violet light emitting diodes.     

Optimization of a laser mitigation process in damaged fused silica

One of the major concerns encountered in high power laser is the laser-induced damage of optical components. This is a main issue of the development of the Europe's biggest laser, known as Laser Méga Joule (LMJ) especially in the section where the beam wavelength is 351 nm. This study deals with the development of a laser treatment process to improve the laser damage resistance of silica optical components. First, by irradiating the component at 355 nm in the nanosecond regime, defects of the silica optic are revealed and evolve as damage. Next, the damaged sites are irradiated with a CO₂ laser at a 10.6 μm wavelength in order to melt and evaporate the silica in the damage neighborhood. In this study, we performed a variation of the CO₂ laser parameters to obtain the most efficient stabilization. To check this stabilization, damage resistance tests were performed with an UV laser representative of the LMJ (at 355 nm/2.5 ns). The results show that we can stabilize weak points and thereby make the component resistant to subsequent UV laser irradiation.     

Luminescence and Tb-Ce-Eu ion energy transfer in single-crystalline films of Tb3Al5O12:Ce,Eu garnet

The paper is devoted to investigation of the processes of excitation energy transfer between the host cations (Tb³⁺ ions) and the activators (Ce³⁺ and Eu³⁺ ions) in single-crystalline films of Tb₃Al₅O₁₂:Ce,Eu (TbAG:Ce,Eu) garnet which is considered as a promising luminescent material for the conversion of LED's radiation. The cascade process of excitation energy transfer is shown to be realized in TbAG:Ce,Eu: (i) from Tb³⁺ ions to Ce³⁺ and Eu³⁺ ions; (ii) from Ce³⁺ ions to Eu³⁺ ions by means of dipole-dipole interaction and through Tb³⁺ ion sublattice.     

Strong blue photoluminescence from aligned silica nanofibers

Photoluminescence (PL) and infrared spectra of aligned silica nanofibers are investigated. Two striking strong blue luminescence emissions have been found at room temperature. This suggests that the silica nanofibers could be a candidate material for a blue-light emitter. The intensity of the PL emission decreases after annealing, which can be interpreted as the decrease of the oxygen deficiency resulting in the reduction of radiative recombination centers. Infrared spectra provide further evidence of this conclusion, where the enhancement of Si–O absorption is observed in annealed samples. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-10/8264-9531, E-mail: ldai@vip.sina.com     

The microscopic interaction parameters for Er/Ho energy transfer in tellurite glasses

We investigate the energy transfer between Er³⁺/Ho³⁺ in tellurite glasses. The main channels of energy transfer between Er³⁺/Ho³⁺ are analyzed in detail. The microscopic interaction parameters of resonant and non-resonant (phonon-assisted) energy transfer parameters via Er³⁺→Ho³⁺ are calculated. The result shows that the resonant energy transfers Er³⁺(²H_11/2(⁴S_3/2))→Ho³⁺(⁵F₄(⁵S₂)) and Er³⁺(⁴F_9/2)→Ho³⁺(⁵F₅) are very efficient and non-resonant energy transfers Er³⁺(⁴I_13/2)→Ho³⁺(⁵I₇) and Er³⁺(⁴I_11/2)→Ho³⁺(⁵I₆), which are a phonon-assisted energy transfer process because of energy mismatch are also existed and cannot be neglected.     

Spectroscopy of infrared transitions of Pr ions in Ga-Ge-Sb-Se glasses

Electronic transitions of Pr³⁺ ions in Ga-Ge-Sb-Se glasses corresponding to emissions in the infrared region were studied by means of absorption and emission spectroscopies and fluorescence lifetimes measurements. Transition probabilities, radiative lifetimes, branching ratios, and quantum efficiencies of most of the emission transitions including the infrared ones occurring around 1.3, 1.7, and 2.4 μm were estimated based on a standard Judd-Ofelt analysis.     

Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose

We report on photoluminescence and Raman studies of Xe ion-implanted diamond. Several natural and high-purity artificial diamonds implanted within the wide dose range of 10¹⁰-5×10¹⁴ ion/cm² were studied. The room temperature luminescence of the Xe center consists of two zero phonon lines, at 813 nm (strong) and 794 nm (weak). The dose dependences of photoluminescence and Raman spectra were studied. For doses less than 10¹³ ion/cm², the luminescence intensity grows with the implantation dose linearly. The defect-induced photoluminescence quenching was observed for doses equal or more than 10¹³ ion/cm². Possible models of the Xe center will be discussed. The nature of damages induced by ion implantation at different doses was analyzed using micro-Raman spectroscopy.     

Temperature dependence of the photoluminescence and phosphorescence time decay of magnesia-stabilized zirconia

Temperature dependence of photoluminescence (PL) spectra and time decay ranging from 90 to 330 K are investigated in magnesia-stabilized zirconia single crystals. The emission PL spectra can be decomposed into two bands. The prominent one is centered in the blue-green region of the spectrum whereas the secondary one is centered in the yellow-orange region. The temperature dependence of these bands are analyzed in terms of the so-called configuration coordinate model. The Huang-Rhys parameter for the prominent band is found near 40 and the effective phonon at about 0.030 eV. Thermal quenching energy is determined to be 0.24 eV from the decreasing part of the I(T) curve. Luminescent decays were satisfactorily fitted by two exponentials over the whole temperature range investigated. Total lifetime temperature dependence can be accounted for by assuming a radiative decay from two metastable levels with a separation energy of 0.073 eV. Results are discussed on the basis of the major defects, oxygen vacancies and complex defects.     

Synthesis and luminescent properties of a new red-emitting phosphor for solid-state lighting: Eu0.1GdxLa1.9−xTeO6 (0.02?x?0.1)

The photoluminescence (PL) emission and excitation behavior of red-emitting Eu_0.1Gd_xLa_1.9−xTeO₆ (0.02?x?0.1) powder phosphors is reported. Three dominant bands centered at 395, 466 and 534 nm characterized the excitation spectrum. Under the excitation of 395 nm UV light, the emission spectrum exhibits an intense peak centered at 616 nm corresponding to the ⁵D₀→⁷F₂ transition of Eu³⁺. Because the f→f transitions are located in the wavelength range of blue or near-UV range, optimized phosphor, Eu_0.10Gd_0.08La_1.82TeO₆, is a promising material for solid-state lighting based on GaN LEDs applications.     

Eu substitution and particle size control of Y2O2S for the excitation by UV light emitting diodes

Yttrium oxysulfide doped with europium (Y₂O₂S:Eu³⁺) red phosphor is used in UV light emitting diodes (LEDs) by mixing with blue and green phosphors to generate white light which are important for the application in general lighting. Here, we demonstrate the effect of shape and size and the concentration of activator (Eu) of red Y₂O₂S phosphor.     

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

The photoluminescence, photoconductivity and absorption in GaSe_0.9Te_0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe_0.9Te_0.1 alloy crystals compared to GaSe crystals. The long wavelength tails of interband photoluminescence, photoconductivity and absorption spectra are determined by the free exciton states and show an Urbach-Martienssen-type dependence to the photon energy. The maxima of the extrinsic photoluminescence and photoconductivity spectra were found to be determined by the acceptor centers with an energy of E_A=E_V+0.19 eV formed by the polytypism and defects complexes that include Se and Te anions.     

Energy transport in silica to oxygen-deficient luminescence centers. Comparison with other luminescence centers in silica and α-quartz

The transport of energy absorbed by silica glass to oxygen-deficient luminescence centers in was studied in the range of intrinsic absorption from 8.2 up to 35 eV. The low efficiency of exciting those luminescence centers by transport of energy could not be ascribed merely to carrier scattering by the disordered structure. Other centers (Cu⁺, for example) could be excited in such process with sufficiently high efficiency, albeit lower than that in crystals. The low efficiency of interaction of oxygen deficient centers with quasi-particles is attributed to isolation of these centers in clusters and the non-radiative annihilation of the quasi-particles on the boundaries of these clusters with the main network.