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1.
The bismuth-stabilized (2 × 4)-reconstructed InP(1 0 0) surface [Bi/InP(1 0 0)(2 × 4)] has been studied by synchrotron-radiation core-level photoelectron spectroscopy. The spectra are compared with previous core-level data obtained on a clean InP(1 0 0)(2 × 4) surface. The findings support that the P 2p surface-core-level shift (SCLS) of the clean InP(1 0 0)(2 × 4), which has higher kinetic energy than the bulk emission, arises from the third-layer P atoms and that the second P 2p SCLS, which has lower kinetic energy than the bulk, arises from the top-layer P atoms. Similar In 4d SCLSs are found on the clean and Bi-stabilized InP(1 0 0)(2 × 4) surfaces, indicating that these shifts contain contributions of the In atoms that lie in the second and/or fourth layers. In addition to this, the results improve our understanding of the atomic structure of the Bi/InP(1 0 0)(2 × 4) surface and lead to refined surface models which include Bi-Bi and Bi-P dimers.  相似文献   

2.
We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied πu bonding and πg antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.  相似文献   

3.
Adsorption of H2 molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H2 molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H2 molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H2 molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H2 dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.  相似文献   

4.
E. Vasco 《Surface science》2005,575(3):247-259
The surface relaxation mechanisms governing the preferential adsorption of metal atoms onto the faulted half-cells of a 7 × 7 reconstructed Si(1 1 1) surface are studied by rate equations and kinetic Monte Carlo simulations. The versatility of these mechanisms to control the formation of quasi-perfect 2D arrays of metal clusters is revealed via the optimization of the deposition/annealing conditions as a function of operating mechanisms, the Si(1 1 1)7 × 7 energy landscape, and the thermal stability of the created clusters. The influence on the formation process of such nanoarrays of the balance between kinetic limitations, which are especially relevant on Si(1 1 1)7 × 7, and thermodynamic tendencies is discussed.  相似文献   

5.
M. Kato  K. Ozawa  S. Otani 《Surface science》2006,600(2):448-452
The electronic structure of α-Mo2C(0 0 0 1) has been investigated by angle-resolved photoemission spectroscopy utilizing synchrotron radiation. A sharp peak is observed at 3.3 eV in normal-emission spectra. Since the peak shows no dispersion as a function of photon energy and is sensitively attenuated by oxygen adsorption, the initial state of the peak is attributed to a surface state. Resonant photoemission study shows that the state includes substantial contribution of 4d orbitals of the Mo atoms in the second layer. The emissions with constant kinetic energies of 22 and 31 eV above the Fermi level (EF) are found in normal-emission spectra, and these emissions are interpreted as originating from the Mo N1N23V and N23VV Auger transitions, respectively.  相似文献   

6.
Reactions and reaction dynamics of gas-phase H(or D) atoms with D(or H) atoms adsorbed onto a Cu(1 1 1) surface have been investigated by the quasi-classical molecular dynamics method. To simulate the H(D) → D(H) + Cu(1 1 1) system at a 94 K surface temperature, D(or H) adsorbates were disseminated arbitrarily on the surface of Cu(1 1 1) to form 0.50, 0.28 and 0.18 ML of coverages. The interaction of hydrogen atoms and the surface system is worked out by an LEPS function. LEPS parameters have been determined by using the total energy values which were calculated by a density functional theory (DFT) method and the generalized gradient approximation (GGA) for the exchange-correlation energy for various configurations of one and two hydrogen atoms on the Cu(1 1 1) surface. The Cu(1 1 1) surface, imitated by an embedded-atom method which is a many-body potential parameterized by Voter-Chen, is formed as a multilayer slab. The slab atoms are permitted to move. Various processes, trapping onto the surface, inelastic reflection of the incident projectile and penetration of the adsorbate or projectile atom into the slab, are examined. The dependence of these mechanisms on isotopic replacement has also been analyzed. Considerable contributions of the hot-atom pathways for the product formations are consequently observed. The rate of subsurface penetrations is obtained to be larger than the sticking rate onto the surface.  相似文献   

7.
M.A.K. Zilani 《Surface science》2007,601(12):2486-2490
We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.  相似文献   

8.
The sticking of hydrogen atoms with kinetic energies in the range 0.003-10 eV on a clean (0 0 1) tungsten surface has been investigated using molecular dynamics simulations. The atoms are found to stick to the surface at 0 and 300 K, with a sticking coefficient smaller than 0.6 for kinetic energies higher than 3 meV. The adsorption sites for H on the W(0 0 1) surface are also presented. The dominant site is in perfect agreement with the experimentally found bridge site.  相似文献   

9.
M. Lindenblatt 《Surface science》2006,600(18):3624-3628
Time-dependent density functional theory for the electronic degrees of freedom has been combined with Ehrenfest dynamics for the nuclei to simulate electron-hole pair excitation due to electronic friction during the chemisorption of hydrogen atoms on an Al(1 1 1) surface. The H-atoms are assumed to be spin-unpolarized in the simulations. Trajectories starting with a hydrogen atom at rest above either the on-top or the fcc-hollow site evolve in qualitatively very different ways: at the fcc-hollow position the H-atom acquires sufficient kinetic energy in the chemisorption well to penetrate into the Al-substrate, thereby increasing the coupling of the motion of the H-atom to the substrate electrons. The electronic excitation spectra, however, are roughly characterized by an exponential decay with similar fictitious temperature parameters of the order of 103 K for both kinds of trajectories. The energy dissipation into electron-hole pairs and the nonadiabatic contribution to the force acting on the hydrogen atom have been calculated along the trajectories.  相似文献   

10.
We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si-Ge (IV-IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si-Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.  相似文献   

11.
The adsorption properties of CO on experimentally verified stepped Pt3Sn(1 0 2) surface were investigated using quantum mechanical calculations. The two possible terminations of Pt3Sn(1 0 2) were generated and on these terminations all types of possible adsorption sites were determined. The adsorption energies and geometries of the CO molecule for all those sites were calculated. The most favorable sites for adsorption were determined as the short bridge site on the terrace of pure-Pt row of the mixed-atom-ending termination, atop site at the step-edge of the pure row of pure-Pt-ending termination and atop site at the step-edge of the pure-Pt row of the mixed-atom-ending termination. The results were compared with those for similar sites on the flat Pt3Sn(1 1 0) surface considering the fact that Pt3Sn(1 0 2) has terraces with (1 1 0) orientation. The LDOS analysis of bare sites clearly shows that there are significant differences between the electronic properties of Pt atoms at stepped Pt3Sn(1 0 2) surface and the electronic properties of Pt atoms at flat (1 1 0) surface, which leads to changes in the CO bonding energies of these Pt atoms. Adsorption on Pt3Sn(1 0 2) surface is in general stronger compared to that on Pt3Sn(1 1 0) surface. The difference in adsorption strength of similar sites on these two surface terminations is a result of stepped structure of Pt3Sn(1 0 2). The local density of states (LDOS) of the adsorbent Pt and C of adsorbed CO was utilized. The LDOS of the surface metal atoms with CO-adsorbed atop and of their bare state were compared to see the effect of CO chemisorption on the electron density distribution of the corresponding Pt atom. The downward shift in energy peak in the LDOS curves as well as changes in the electron densities of the corresponding energy levels indicate the orbital mixing between CO molecular orbitals and metal d-states. The present study showed that the adsorption strength of the sites has a direct relation with their LDOS profiles.  相似文献   

12.
Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0 0 0 1) surfaces of β-Si3N4 and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord with the experimental value of 5.1-5.3 eV for H-free Si3N4. Using a two-dimensionally-periodic slab model, a π-bonding interaction is found between threefold-coordinated Si and twofold-coordinated N atoms in the surface plane leading to π and π* surface-state bands in the gap. A surface-state band derived from s-orbitals is also found in the gap between the upper and lower parts of the valence band. Relaxation results in displacements of surface and first-underlayer atoms and to a stronger π-bonding interaction which increases the π-π* gap. The relaxed surface shows no occupied surface states above the valence band maximum, in agreement with recent photoemission data for a thin Si3N4 film. The π* band, however, remains well below the conduction band minimum (but well above the Fermi level). Adsorbing H at all dangling-bond sites on the ideally-terminated surface and then relaxing the surface and first underlayer leads to smaller, but still finite, displacements in comparison to the clean relaxed surface. This surface is more stable, by about 3.67 eV per H, than the clean relaxed surface.  相似文献   

13.
H. Rauscher  R.J. Behm 《Surface science》2007,601(19):4608-4619
The interaction of CO with structurally well-defined PtxRuy surface alloys supported on Ru(0 0 0 1) was investigated by thermal desorption spectroscopy and infrared reflection-absorption spectroscopy. The surface composition and the distribution of the surface atoms were controlled by high resolution scanning tunneling microscopy. On these surfaces, which have a nearly random distribution of the two surface species, the adsorption (and desorption) of CO is strongly modified compared to the pure elemental surfaces, by strain effects and electronic ligand effects. CO adsorbs exclusively in a linear configuration on Pt and Ru atoms for all surfaces investigated. The adsorption energy of CO is lowered on the alloy surfaces with respect to both Pt(1 1 1) and Ru(0 0 0 1), similar as for pseudomorphic monolayer Pt films. For both Pt and Ru sites the adsorption strength decreases with increasing Pt concentration.  相似文献   

14.
Supersonic molecular beam technique combined with high resolution X-ray photoelectron spectroscopy using synchrotron radiation was applied to the study of the dynamics of dissociative adsorption of oxygen on Ru(0 0 0 1) surface in high coverage region. The Ru(0 0 0 1) surface pre-covered with oxygen atoms of 0.5 monolayer, which corresponds to the p(2 × 1)-O structure, was dosed to oxygen molecules with translational energy of 0.5 eV. Oxygen uptake was compared between the cases with and without the beam source heated in order to verify the effects of internal energy of oxygen. We found drastic enhancement in initial sticking probability of oxygen when the beam source was heated to 1400 K. We concluded that the enhancement of sticking probability is mainly caused by molecular vibrational excitation, indicating that dissociation barrier is located in the exit channel on potential energy surface.  相似文献   

15.
Y. Yun  D. Liao  E.I. Altman 《Surface science》2007,601(19):4636-4647
The effect of ferroelectric poling direction on the structure and electronic properties of the LiNbO3 (0 0 0 1) surface was characterized. Low energy and reflection high energy electron diffraction indicated that both the positively and negatively poled surfaces were (1 × 1) with no evidence of longer range periodic reconstructions. Low energy ion scattering spectra from both surfaces were dominated by scattering from oxygen atoms. X-ray and ultraviolet photoelectron spectra also showed little difference between the positively and negatively poled surfaces, with the exception of a high binding energy shoulder on the O 1s core level of the negative surface. Exposure of the surfaces to atomic hydrogen caused reduction of the surface Nb rather than an increase in intensity on the high binding energy side of the O 1s peak, indicating that the shoulder on the O 1s peak on the negative surface was not due to surface hydroxyl groups. Temperature programmed desorption measurements indicated that the nearly stoichiometric LiNbO3 samples were susceptible to loss of Li2O starting at temperatures as low as 500 K, independent of the poling direction. An adatom/vacancy model is proposed in which oxygen ad-anions accumulate on one side of the crystal while oxygen anion vacancies are created on the opposite surface. This model can explain the apparent oxygen termination of both surfaces and the observed (1 × 1) periodicity of the surfaces, and also effectively screens the thickness dependent electric field associated with the polar orientation of the crystal.  相似文献   

16.
A. Nojima 《Surface science》2007,601(14):3003-3011
We have used density functional theory to investigate hydrogen adsorption and diffusion on a W(1 1 0) surface. Hydrogen adsorption structures were examined from low coverage to one monolayer, and a threefold hollow site was found to be the most stable site at all coverages. In contrast to previous assertions, the work function decrease is not due to electron transfer from the hydrogen atoms to the W surface, but due to electron depletion at the vacuum region above the hydrogen atoms. Hydrogen atoms can diffuse via short-bridge sites and long-bridge sites at a coverage of θ = 1.0. Although the calculated activation energy for hydrogen diffusion via a short-bridge site is as small as 0.05 eV, field emission microscope experiments have shown that the activation energy for hydrogen diffusion is about 0.20 eV, which agrees fairly well with our calculated value of the activation energy via a long-bridge site. This discrepancy can be related to hydrogen delocalization on the W(1 1 0) surface, which has been suggested by electron energy loss spectroscopy experiments.  相似文献   

17.
T. Shimada  K. Imamura  H. Orita 《Surface science》2009,603(15):2340-2344
Density functional theory (DFT) calculations have been performed to elucidate the electronic structures of the TiO-like film on TiC(1 0 0) and the ZrO-like film on ZrC(1 0 0), which are assumed to be monolayers of suboxide films with (1 × 1) periodicity with respect to the substrate (1 0 0) surfaces. It was revealed that the electronic structures of both films were characterized by the existence of a band around 6 eV and a band around the Fermi level. The former and latter bands were mostly composed of O 2p and metal d orbitals, respectively, indicating the substantial ionic nature of the film. The calculated DOS well reproduced the previously obtained photoelectron spectra. From the inspection of the optimized structures, it was found that the both suboxide films have rippled structures; the metal and oxygen atoms are displaced vertically downward and upward, respectively, maintaining the (1 × 1) structures.  相似文献   

18.
T. Bernhard 《Surface science》2006,600(9):1877-1883
The structure and magnetism of thin epitaxial Fe layers grown on Cu(0 0 1) is investigated by grazing scattering of fast H and He atoms. Information on the atomic structure of the film and substrate surfaces is obtained by making use of ion beam triangulation with protons. The magnetic behavior is studied via the polarization of light emitted after capture of spin-polarized electrons into excited atomic terms during scattering of He atoms. For the formation of bcc(1 1 0)-like Fe films at higher coverages, we detect differences in structural and magnetic properties for room and low temperature growth. We suggest that the crystalline structure depends on the film morphology and that Cu impurities affect the magnetic properties.  相似文献   

19.
First-principles calculations are performed to study the various structures of oxygen (O) adsorbed on InN(0 0 0 1) surfaces. It is found that the formation energy of O on InN(0 0 0 1) decreases with decreasing oxygen coverage. Of all the adsorbate induced surface structures examined, the structure of InN(0 0 0 1)-(2 × 2) as caused by O adsorption at the H3 sites with 0.25 monolayers coverage is most energetically favorable. Meanwhile, nitrogen (N) vacancy can form spontaneously. Oxygen atoms may also substitute N atoms, or accumulate at the voids inside InN film or simply stay on the surface during growth. The oxygen impurity then acts as a potential source for the n-type conductivity of InN as well as the large energy band gap measured.  相似文献   

20.
Ming Tan 《Applied Surface Science》2007,253(22):8905-8910
Using the laser post-ionization surface analysis technique, I have for the first time studied angular distributions of Ni and Al atoms sputtered from NiAl{1 1 0}. Emission angular distributions from Ni{1 0 0} have also been measured. I have observed preferential emissions of Ni and Al atoms along 〈1 1 1〉 and 〈1 0 0〉crystallographic directions for NiAl{1 1 0} and of Ni atoms along 〈1 1 0〉 and 〈1 0 0〉 directions for Ni{1 0 0}. The observed preferential ejections can be explained in terms of the theory of focusing-collision sequences. Because of the difference in surface binding energy between Al and Ni atoms, preferential ejection angles of Ni atoms are slightly different from those of Al atoms along the 〈1 1 1〉 ejections. For NiAl, the 〈1 1 1〉 preferential ejections were less prominent than the 〈1 0 0〉 preferential ejections and this can be related to the low efficiency of momentum transfer in Ni-Al collision sequences along 〈1 1 1〉 lattice directions. The low efficiency of momentum transfer due to the mass mismatch can also be responsible for the experimental observation that the preferential ejections in the alloy were less prominent than those in the Ni metal.  相似文献   

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