拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

Bi2MoO6 nanofilms on the stainless steel mesh by PS-PED method: Photocatalytic degradation of diclofenac sodium as a pharmaceutical pollutant

For the first time, Bi₂MoO₆ nanofilms were successfully synthesized by simultaneous pulse sonication-pulse electrodeposition (PS-PED) on the stainless steel mesh surface. Bismuth molybdate films were formed under various combinations of electrodeposition and sonication (sono-electrodeposition) in continuous and pulse modes. Porous Bi₂MoO₆ films synthesized by PS-PED method and showed the highest efficiency in photocatalytic degradation in comparison with other films. Bi₂MoO₆ film obtained from PS-PED had a thickness of 13.78 nm while, the thickness for the electrodeposition method was 39.52 nm. The high photocatalytic efficiency is attributed to the high surface roughness and low thickness of film synthesized by PS-PED method. Indeed, ultrasound played a key role in the synthesis of films with high surface roughness. On the other hand, shock waves and micro-jets could be dissolved diffusion problems and reduced the dendrite like structures in deposition process. Simultaneous application of pulse modes for both combined methods led to more growth of crystallographic planes. This is due to reaction of ions on the surface in interval relaxation times and produce more nuclei for growth. In order to obtain a high efficiency, response surface methodology was used for optimization of effective variable parameters (t_on, t_off and sonication amplitude) in film preparation.     

Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

Mo纳米薄膜热力学性质的分子动力学模拟

采用改进嵌入原子法(MAEAM),通过经典的分子动力学(MD)模拟计算了高熔点过渡金属体心立方(bcc) Mo块体Gibbs自由能和表面能. 对于纳米薄膜的热力学数据,比如Gibbs自由能等,可以看成是薄膜内部原子和表面原子两部分数据之和,然后根据薄膜的体表原子之比就可以直接计算出总的自由能,并由此可以得到热力学性质与薄膜尺寸及温度的定量关系式. 分别计算了bcc Mo块体及其纳米尺寸薄膜的自由能和热容,结果表明,Mo纳米薄膜的热力学性质具有尺寸效应,并且在薄膜尺寸小于15—20nm时,这种效应变得非常明 关键词： 改进嵌入原子法 Mo纳米薄膜 表面自由能 热容     

Assembly of γ-Fe2O3/polyaniline nanofilms with tuned dipolar interaction

The internal morphology and magnetic properties of layer-by-layer assembled nanofilms of polyaniline (PANI) and maghemite (γ-Fe₂O₃—7.5-nm diameter) were probed with cross-sectional transmission electron microscopy (TEM) and magnetization measurements (magnetic hysteresis loops, magnetization using zero-field cooled/field-cooled protocols, and ac magnetic susceptibility). Additionally, simulations of the as-produced samples were performed to assess both the nanofilm’s morphology and the corresponding magnetic signatures using the cell dynamic system (CDS) approach and Monte Carlo (MC) through the standard Metropolis algorithm, respectively. Fine control of the film thickness and average maghemite particle–particle within this magnetic structure was accomplished by varying the number of bilayers (PANI/γ-Fe₂O₃) deposited onto silicon substrates or through changing the concentration of the maghemite particles suspended within the colloidal dispersion sample used for film fabrication. PANI/γ-Fe₂O₃ nanofilms comprising 5, 10, 25 and 50 deposited bilayers displayed, respectively, blocking temperatures (T _B) of 30, 35, 39 and 40 K and effective energy barriers (ΔE/k _B) of 1.0 × 10³, 2.3 × 10³, 2.8 × 10³ and 2.9 × 10³ K. Simulation of magnetic nanofilms using the CDS model provided the internal morphology to carry on MC simulation of the magnetic properties of the system taking into account the particle–particle dipolar interaction. The simulated (using CDS) surface–surface particle distance of 0.5, 2.5 and 4.5 nm was obtained for nanofilms with thicknesses of 36.0, 33.9 and 27.1 nm, respectively. The simulated (using MC) T _B values were 33.0, 30.2 and 29.5 K for nanofilms with thicknesses of 36.0, 33.9 and 27.1 nm, respectively. We found the experimental (TEM and magnetic measurements) and the simulated data (CDS and MC) in very good agreement, falling within the same range and displaying the same systematic trend. Our findings open up new perspectives for fabrication of magnetic nanofilms with pre-established (simulated) morphology and magnetic properties.     

Growth of well-aligned Bi nanowire on Ag(1 1 1)

We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along direction and align with the directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy.     

Vibrational dynamics and surface structure of Bi(111) from helium atom scattering measurements

The Bi(111) surface was studied by elastic scattering of helium atoms at temperatures between 118 and 423 K. The observed diffraction patterns with clear peaks up to third order were used to model the surface corrugation using the eikonal approximation as well as the GR method. Best fit results were obtained with a rather large corrugation height compared to other surfaces with metallic character. The corrugation shows a slight enhancement of the surface electron density in between the positions of the surface atoms. The vibrational dynamics of Bi(111) were investigated by measurements of the Debye-Waller attenuation of the elastic diffraction peaks and a surface Debye temperature of (84 ± 8) K was determined. A decrease of the surface Debye temperature at higher temperatures that was recently observed on Bi nanofilms could not be confirmed in the case of our single-crystal measurements.     

Chemical vapor deposition growth of two-dimensional heterojunctions

The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.     

Morphological differences between Bi, Ag and Sb nano-particles and how they affect the percolation of current through nano-particle networks

Nano-particles of Bi, Ag and Sb have been produced in an inert gas aggregation source and deposited between lithographically defined electrical contacts on SiN. The morphology of these films have been examined by atomic force microscopy and scanning electron microscopy. The Bi nano-particles stick well to the SiN substrate and take on a flattened dome shape. The Ag nano-particles also stick well to the SiN surface; however they retain a more spherical shape. Whereas, many of the Sb nano-particles bounce off the SiN surface with only a small fraction of the Sb nano-particles aggregating at defects resulting in a non-random distribution of the clusters. These nano-scale differences in the film morphology influence the viability of applying percolation theory to in situ macroscopic measurements of the film conductivity, during the deposition process. For Bi and Ag nano-particles the increase in conductivity follows a power law. The power law exponent, t, was found to be 1.27 ±0.13 and 1.40 ±0.14, for Bi and Ag respectively, in agreement with theoretical predictions of t ≈1.3 for 2D random continuum percolation networks. Sb cluster networks do not follow this model and due to the majority of the Sb clusters bouncing off the surface. Differences in the current onset times and final conductance values of the films are also discussed.     

金属纳米薄膜在石墨基底表面的动力学演化

采用分子动力学方法研究了金属Au和Pt纳米薄膜在石墨(烯)基底表面的动力学演化过程,探讨了金属薄膜和石墨(烯)基底间的相互作用对金属纳米薄膜在固态基底表面的去湿以及脱附的动力学演化的影响.研究结果表明,在高温下,相同层数的Au和Pt纳米薄膜在单层石墨基底表面上存在不同的去湿现象,主要表现为厚度较小的Pt纳米薄膜在去湿过程中有纳米空洞形成,而同样厚度的Au薄膜在去湿过程中没有形成空洞.Au和Pt两种金属薄膜在高温下都去湿形成纳米液滴,这些液滴最终都以一定的速度脱离基底.在模拟的薄膜厚度范围内(0.2—2.3 nm),Au和Pt纳米液滴脱离基底的速度随厚度增加表现出不同的变化规律.Pt纳米液滴的脱离速度随薄膜初始厚度的增加先增加后减少,而Au脱离速度随厚度的增加先减少,达到一个临界厚度后脱离速度突然迅速增加.利用薄膜与基底间相互作用的不同导致去湿过程中的黏滞耗散不同,定性分析了这种变化规律的原因.此外,进一步研究还发现金属液滴的脱离时间与薄膜厚度和模拟温度的依赖关系,发现脱离时间随薄膜厚度的增加而增加,随模拟温度的升高而减小.这些研究结果可以为金属镀膜、浮选、表面清洁、器件表面去湿等工业生产过程提供理论指导.     

In situ spectroscopic determination of the activation energies for the growth of silver nanoparticles in silica nanofilms in nitrogen atmosphere

An in situ non-destructive optical microspectroscopy investigation of the growth of Ag nanoparticles (NPs) embedded in SiO₂ nanofilms deposited on soda-lime glass has been conducted during thermal processing under a nitrogen atmosphere. The time variation in Ag NP size was monitored by fitting the surface plasmon resonance with spectra calculated by Mie theory. The spectroscopic data was analyzed in the context of crystal growth theory and the atmosphere/film/substrate physicochemical interactions. The Ag NPs were indicated to grow first through a diffusion-based process and subsequently via Ostwald ripening. The analysis of a set of time-dependent isotherms has allowed for estimating the activation energies for silver diffusion at 2.5 eV for the initial growth stage and 3.2 eV for the ripening.     

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Recently, there have been intense efforts in searching for new topological insulator materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z(2) number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z(2) topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k points with the increasing film thickness and associated with the intermediate interbilayer coupling of the Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi (111) films can be effectively removed by surface adsorption.     

Band structure of silicon and germanium thin films based on first principles

In nanomaterials, optical anisotropies reveal a fundamental relationship between structural and optical properties, in which directional optical properties can be exploited to enhance the performance of optoelectronic devices. First principles calculation based on density functional theory(DFT) with the generalized gradient approximation(GGA) are carried out to investigate the energy band gap structure on silicon(Si) and germanium(Ge) nanofilms. Simulation results show that the band gaps in Si(100) and Ge(111) nanofilms become the direct-gap structure in the thickness range less than 7.64 nm and7.25 nm respectively, but the band gaps of Si(111) and Ge(110) nanofilms still keep in an indirect-gap structure and are independent on film thickness, and the band gaps of Si(110) and Ge(100) nanofilms could be transferred into the direct-gap structure in nanofilms with smaller thickness. It is amazing that the band gaps of Si~((1-x)/2)Ge~xSi~((1-x)/2)sandwich structure become the direct-gap structure in a certain area whether(111) or(100) surface. The band structure change of Si and Ge thin films in three orientations is not the same and the physical mechanism is very interesting, where the changes of the band gaps on the Si and Ge nanofilms follow the quantum confinement effects.     

Low-temperature anisotropy of the thermal conductivity of single-crystal nanofilms and nanowires

The effect of phonon focusing on the phonon transport in single-crystal nanofilms and nanowires is studied in the boundary scattering regime. The dependences of the thermal conductivity and the free path of phonons on the geometric parameters of nanostructures with various elastic energy anisotropies are analyzed for diffuse phonon scattering by boundaries. It is shown that the anisotropies of thermal conductivity for nanostructures made of cubic crystals with positive (LiF, GaAs, Ge, Si, diamond, YAG) and negative (CaF₂, NaCl, YIG) anisotropies of the second-order elastic moduli are qualitatively different for both nanofilms and nanowires. The single-crystal film plane orientations and the heat flow directions that ensure the maximum or minimum thermal conductivity in a film plane are determined for the crystals of both types. The thermal conductivity of nanowires with a square cross section mainly depends on a heat flow direction, and the thermal conductivity of sufficiently wide nanofilms is substantially determined by a film plane orientation.     

金纳米空心半球壳膜的可调谐光学性质研究

以单层聚苯乙烯微球阵列为模板,通过控制其表面金膜蒸镀时间,制备了具有不同厚度的空心半球壳结构的金纳米膜.利用扫描电子显微镜和自制光谱仪分别测量了金膜表面形貌和其透射光谱,并分析了金膜形貌与其光学性质间的关系,同时以4-巯基苯胺为探针分子测定了金膜的表面增强喇曼散射效应.结果表明,该金纳米膜的表面等离子体共振波长随膜厚度增大而发生红移,在可见与近红外波段较宽范围内可调谐,并且,当金膜共振波长与入射激发光波长较近时,探针分子可产生出较强的表面增强喇曼信号.同时,对该现象的产生机制也进行了理论解释.     

Self-assembly 2D plasmonic nanorice film for surface-enhanced Raman spectroscopy

As an ultrasensitive sensing technology, the application of surface enhanced Raman spectroscopy (SERS) is one interesting topic of nano-optics, which has huge application prospectives in plenty of research fields. In recent years, the bottleneck in SERS application could be the fabrication of SERS substrate with excellent enhancement. In this work, a two-dimensional (2D) Ag nanorice film is fabricated by self-assembly method as a SERS substrate. The collected SERS spectra of various molecules on this 2D plasmonic film demonstrate quantitative detection could be performed on this SERS substrate. The experiment data also demonstrate this 2D plasmonic film consisted of anisotropic nanostructures has no obvious SERS polarization dependence. The simulated electric field distribution points out the SERS enhancement comes from the surface plasmon coupling between nanorices. And the SERS signals is dominated by molecules adsorbed at different regions of nanorice surface at various wavelengths, which could be a good near IR SERS substrate for bioanalysis. Our work not only enlarges the surface plasmon properties of metal nanostructure, but also exhibits the good application prospect in SERS related fields.     

Effects of deposition temperature and thickness on the structural properties of thermal evaporated bismuth thin films

Bismuth (Bi) thin films of different thicknesses were deposited onto Si(1 0 0) substrate at various substrate temperatures by thermal evaporation technique. Influences of thickness and deposition temperature on the film morphologies, microstructure, and topographies were investigated. A columnar growth of hexahedron-like grains with bimodal particle size distribution was observed at high deposition temperature. The columnar growth and the presence of large grains induce the Bi films to have large surface roughness as evidenced by atomic force microscopy (AFM). The dependence of the crystalline orientation on the substrate temperature was analyzed by X-ray diffraction (XRD), which shows that the Bi films have completely randomly oriented polycrystalline structure with a rhombohedral phase at high deposition temperature (200 °C) and were strongly textured with preferred orientation at low deposition temperatures (30 and 100 °C).     

Robustness of topologically protected surface states in layering of Bi2Te3 thin films

Bulk Bi2Te3 is known to be a topological insulator. We investigate surface states of Bi2Te3(111) thin films of one to six quintuple layers using density-functional theory including spin-orbit coupling. We construct a method to identify topologically protected surface states of thin film topological insulators. Applying this method to Bi2Te3 thin films, we find that the topological nature of the surface states remains robust with the film thickness and that the films of three or more quintuple layers have topologically nontrivial surface states, which agrees with experiments.     

基于铋可饱和吸收体的超快激光产生

采用磁控溅射沉积法在微纳光纤表面上镀一层纳米级厚度的铋薄膜,制备了一种微纳光纤-铋膜结构的可饱和吸收体.在1.5μm处的非线性光调制深度为14%.将其应用到掺铒光纤激光器中,在1.5μm波段获得稳定的超快脉冲激光产生,脉宽为357 fs,输出功率为45.4 mW,单脉冲能量为2.39 nJ,信噪比为84 dB.实验结果表明,利用磁控溅射法可制备出大调制深度的可饱和吸收体,为获得高能量超短脉冲激光输出提供新方案.     

Bi_2Ti_2O_7/Si薄膜的制备及C-V特性研究

采用化学溶液分解法 (CSD)在Si衬底上制备了Bi2 Ti2 O7薄膜 .X射线双晶衍射和原子力显微镜检测表明 ,所制备的薄膜主要为Bi2 Ti2 O7相的多晶材料 .同时还研究了Au Bi2 Ti2 O7 n Si(10 0 )结构的电容 电压 (C V)特性 ,结果表明 ,在Bi2 Ti2 O7薄膜中同时存在固定的与可移动的负电荷 ,可移动的负电荷导致了C V曲线的回线效应