H NMR study of the phase transitions of trissarcosine calcium chloride single crystals at low temperature

The ¹H NMR line-width and spin-lattice relaxation time T₁ of TSCC single crystals were studied. Variations in the temperature dependence of the spin-lattice relaxation time were observed near 65 and 130 K, indicating drastic alterations of the spin dynamics at the phase transition temperatures. The changes in the temperature dependence of T₁ near 65 and 130 K correspond to phase transitions of the crystal. The anomalous decrease in T₁ around 130 K is due to the critical slowing down of the soft mode. The abrupt change in relaxation time at 65 K is associated with a structural phase transition. The proton spin-lattice relaxation time of this crystal also has a minimum value in the vicinity of 185 K, which is governed by the reorientation of the CH₃ groups of the sarcosine molecules. From this result, we conclude that the two phase transitions at 65 and 130 K can be discerned from abrupt variations in the ¹H NMR relaxation behavior, and that ¹H nuclei play important roles in the phase transitions of the TSCC single crystal.     

Phase transition and ferroelastic property studied by using the Cs nuclear magnetic resonance in a CsHSO4 single crystal

The ¹³³Cs spin-lattice relaxation time in a CsHSO₄ single crystal was measured in the temperature range from 300 to 450 K. The changes in the ¹³³Cs spin-lattice relaxation rate near T_c1 (=333 K) and T_c2 (=415 K) correspond to phase transitions in the crystal. The small change in the spin-lattice relaxation time across the phase transition from II to III is due to the fact that during the phase transition, the crystal lattice does not change very much; thus, this transition is a second-order phase transition. The abrupt change of T₁ around T_c2 (II-I phase transition) is due to a structural phase transition from the monoclinic to the tetragonal phase; this transition is a first-order transition. The temperature dependences of the relaxation rates in phases I, II, and III are indicative of a single-phonon process and can be represented by T₁⁻¹=A+BT. In addition, from the stress-strain hysteresis loop and the ¹³³Cs nuclear magnetic resonance, we know that the CsHSO₄ crystal has ferroelastic characteristics in phases II and III.     

2H nuclear magnetic resonance study of deuterated water dynamics in perfluorosulfonic acid ionomer Nafion

We have employed deuteron nuclear magnetic resonance (NMR) spectroscopy in order to study the dynamics of the deuterated water (D₂O) molecules introduced into a perfluorosulfonic acid ionomer Nafion (NR-211) film. According to the ²H NMR spectral analysis, the deuterated water molecules at low temperatures occupied either relatively rigid or mobile sites up to the temperature T_M=240 K where all the deuterated water molecules became mobile. The temperature-dependent NMR linewidths sensitively reflected the motional narrowing of the rigid and mobile sites, and the NMR chemical shift reflected significant changes in the hydrogen bonds of the deuterated water. While a slow- to fast-limit motional transition was manifested at T_M in the laboratory-frame NMR spin–lattice relaxation, the rotating-frame spin–lattice relaxation indicated no bulk liquid water state down to 200 K.     

Early-stage ordering in in-situ annealed Fe51Pt49 films

We evidenced an early-stage ordering (ESO) in Fe₅₁Pt₄₉ film before the appearance of superlattice diffraction (long-range-order, LRO) using 40-nm-thick films prepared by magnetron sputtering onto quartz substrate. The appearance of L1₀ phase for samples deposited at substrate temperatures (T_s) 400 °C and higher was verified by X-ray diffraction. Surface roughness of Fe₅₁Pt₄₉ films, obtained via X-ray specular reflectivity with computational fitting, increases from 3.8 to 11 Å as T_s is increased from 25 to 275 °C. As further increase of T_s to 375 °C, the roughness drops to 3.2 Å and then increases again to 38 Å with T_s up to 700 °C. Measurement on residual strain demonstrates that it is initially compressive at T_s<400 °C. Thereafter the strain transfers to a tensile one and increases in magnitude as increasing T_s up to 700 °C corresponding to LRO transformation. Local atomic rearrangement is observed for samples deposited at T_s>250 °C by using extended X-ray absorption fine structure. Coercivity of films increases from 10 to 460 Oe as T_s increase from 25 to 375 °C (ESO) and then from 460 to 10,700 Oe with T_s 375-700 °C (normal LRO). The worked out quantitative estimation of ESO engages with that of LRO before T_s 400 °C.     

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Influence of both substrate temperature, T_s, and annealing temperature, T_a, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (T_s = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (T_a = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a₀, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the T_s and T_a of the films. Observed decrease in the film resistivity with T_a is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.     

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

The remote microwave hydrogen plasma chemical vapor deposition (RP-CVD) from bis(dimethylamino)methylsilane precursor was used for the synthesis of silicon carbonitride (Si:C:N) films. The effect of thermal activation on the RP-CVD process was examined by determining the mass- and the thickness-based film growth rate and film growth yield, at different substrate temperature (T_S). It was found that the mechanism of the process depends on T_S and for low substrate temperature regime, 30 °C ≤ T_S ≤ 100 °C, RP-CVD is limited by desorption of film-forming precursors, whereas for high substrate temperature regime, 100 °C < T_S ≤ 400 °C, RP-CVD is a non-thermally activated and mass-transport limited process. The Si:C:N films were characterized by X-ray photoelectron and Fourier transform infrared spectroscopies, as well as by atomic force microscopy. The increase of T_S enhances crosslinking in the film via the formation of nitridic Si-N and carbidic Si-C bonds. On the basis of the structural data a hypothetical crsosslinking reactions contributing to silicon carbonitride network formation have been proposed.     

Dielectric relaxation in single crystal NH4H2PO4 in the high-temperature regime

The dispersion curves of the dielectric response in single crystal NH₄H₂PO₄ were obtained in the radio frequency range and below the high-temperature transition at T_p−160 °C. The results reveal dielectric relaxation at low frequency, which is about 10⁵ Hz at 70 °C, and it shifts to higher frequencies (∼3×10⁶ Hz) as the temperature increases. The relaxation frequency was determined from the peak obtained in the imaginary part of the permittivity as well as from the derivative of the real part of the permittivity. The activation energy E_a=0.55 eV, obtained from the relaxation frequency is very close to that derived from the dc conductivity. We suggest that this dielectric relaxation could be due to the proton jump and phosphate reorientation that cause distortion and change the local lattice polarizability inducing dipoles like      

In situ HCl etching of Si for the elaboration of locally misorientated surfaces

We have studied the in situ HCl etching of Si active areas on patterned wafers. After some in situ HCl etching at 20 Torr of Si(1 0 0), we have locally obtained 2 μm long areas with misorientation angles around 4.5° towards 〈1 1 0〉. Furthermore, we have evidenced a recess shape transition from convex (T ≤ 865 °C) to concave (T ≥ 895 °C) as the etch temperature increases, with a nearly flat surface with no facets at T = 880 °C. The morphology of the etched structures at a given time, temperature and PHCl/PH₂ ratio will be a function of the slope lengths and the pattern dimensions. Different kinds of surfaces (rounded areas, facets) were obtained in 3.5 μm × 3.5 μm Si windows after HCl etching at 850 °C during 300 s, depending on the stress within. Thermal oxidations can indeed be used to increase by 65 MPa up to 110 MPa the compressive stress in those Si windows which are bordered by SiO₂ shallow trench isolation. An increase of the misorientation angle from 4.5° up to 6° occurred after the above-mentioned HCl etch when switching from conventional to highly strained Si windows. For the shortest etching times studied here (150 s), a selective etching of 3.5 μm × 3.5 μm Si windows edges is responsible for the misorientation. The etch is then more uniform. Stress gradients might consequently be one of the main misorientation causes. We have also probed the influence of the shallow trench isolation (STI) thickness on the misorientation. A morphological difference before HCl etching has been shown to be responsible for the transition from sloped to rounded areas. A local loading effect may prevail in this case.     

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(1 0 0) substrates under varying growth temperature (T_s). HfO₂ ceramic target has been employed for sputtering while varying the T_s from room temperature to 500 °C during deposition. The effect of T_s on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence X-ray diffraction (GIXRD), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive X-ray spectrometry (EDS). The results indicate that the effect of T_s is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at T_s < 200 °C are amorphous while films grown at T_s > 200 °C are nanocrystalline. An amorphous-to-crystalline transition occurs at T_s = 200 °C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (−1 1 1) orientation. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at T_s > 200 °C. The thickness of IL increases with increasing T_s. EDS at the HfO₂-Si cross-section indicate that the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing T_s. The current-voltage characteristics indicate that the leakage current increases significantly with increasing T_s due to increased ILs.     

Antiferroelectric phase transition in pyrochlore-like (Dy1− xCax)2Ti2O7 − δ (x = 0, 0.1) high temperature conductors

Low-temperature ordering transitions in polycrystalline high temperature conductors (Dy_1 − xCa_x)₂Ti₂O_7 − δ (x = 0, 0.1) prepared using co-precipitation, mechanical activation and solid-state reactions at 1400 or 1600 °C have been studied by impedance spectroscopy at low frequencies and thermal mechanical analysis (TMA). The dielectric permittivity and loss tangent of the ceramics obtained have been measured as a function of temperature at low frequencies (0.5−500 Hz). The results provide evidence for the relaxation of point defects, most likely oxygen vacancies, at 500−600 °C and an antiferroelectric low-temperature phase transition of the second order, associated with re-arrangement process in the oxygen sublattice of pyrochlore structure. The temperature of the antiferroelectric transition is 700 to 800 °C, depending on the synthesis procedure and ceramic composition. Calcium doping of Dy₂Ti₂O₇ leads to the formation of additional oxygen vacancies and, in the case of the samples prepared via co-precipitation, increases the peaks in permittivity due to the relaxation process and ordering transition by three or six times, respectively.     

A study on new phase transitions in Cs2CaCl4·2H2O single crystals by observation of Cs NMR

The ¹³³Cs 1/2→−1/2 spin-lattice relaxation rate, , and the spin-spin relaxation rate, , for a Cs₂CaCl₄·2H₂O single crystal have been measured in function of temperature. The dominant relaxation mechanism of this crystal over the whole temperature range investigated here proceeds via quadrupole interaction. The changes in the ¹³³Cs spin-lattice relaxation rate near 325 K (=T_c1) and 360 K (=T_c2) correspond to phase transitions in the crystal. The change in the spin-lattice relaxation rate at T_c1 is small because the crystal lattice does not change very much during this phase transition. The change in near T_c2 is due to the critical slowing down of the soft mode that typically occurs in structural phase transitions. The temperature dependence of the spin-lattice relaxation rate for this crystal has maximum values at about 240 K, which is attributable to the effect of molecular motion as described by Bloembergen-Purcell-Pound theory. The phase transition temperatures T_c1 and T_c2 obtained from the temperature dependence of the relaxation rate is also clear from data obtained using differential scanning calorimetry. Therefore, we know that previously unreported phase transitions occur at 325 and 360 K.     

Modification of dielectric relaxations in sodium bismuth titanate with samarium doping

Na_0.5Bi_(0.5−x) Sm_xTiO₃ (NBST) ceramics with x=0.05, 0.1, and 0.15 are prepared through chemical route. The X-ray diffraction studies confirmed the formation of single phase. Dielectric measurements in the temperature region ranging from room temperature (∼30 °C) to 600 °C at different frequencies (10 kHz-1 MHz) showed anomalies at 130, 306, and 474 °C (at 10 kHz frequency) for x=0.05 sample. Other samples showed only two peaks. To establish the electrical nature of these relaxations, impedance measurements are done at different temperatures and frequencies. The relaxation time, obtained from both impedance and modulus data, is found to decrease with increase in temperature. The relaxations observed are of non-Debye type. Increase in samarium content increases the activation energy for relaxation.     

Tuning hydrogen storage properties and reactivity: Investigation of the LiBH4-NaAlH4 system

Tuning the hydrogen storage properties of complex metal hydrides is of vast interest. Here, we investigate the hydrogen release and uptake pathways for a reactive hydride composite, LiBH₄−NaAlH₄ utilizing in situ synchrotron radiation powder X-ray diffraction experiments. Sodium alanate transforms to sodium borohydride via a metathesis reaction during ball milling or by heating at T∼95 °C. NaBH₄ decomposes at ∼340 °C in dynamic vacuum, apparently directly to solid amorphous boron and hydrogen and sodium gas and the latter two elements are lost from the sample. Under other conditions, T=400 °C and p(H₂)=∼1 bar, NaBH₄ only partly decomposes to B and NaH. On the other hand, formation of LiAl is facilitated by dynamic vacuum conditions, which gives access to the full hydrogen contents in the LiBH₄−NaAlH₄ system. Formation of AlB₂ is observed (T∼450 °C) and other phases, possibly AlB_x or Al_1−xLi_xB₂, were observed for the more Li-rich samples. This may open new routes to the stabilization of boron in the solid state in the dehydrogenated state, which is a challenging and important issue for hydrogen storage systems based on borohydrides.     

Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1)

Strain relaxation of the epitaxial SiGe layer and Ge diffusion during nickel silicidation by rapid thermal annealing the structure of Ni(≅14 nm)/cap-Si(≅26 nm)/Si_0.83Ge_0.17/Si(0 0 1) at the elevated annealing temperatures, T_A, were investigated by X-ray diffraction analyses of high-resolution ω-2θ scan and reciprocal space mapping. The analyses showed a much larger strain relaxation at a lower T_A and a reduction in Ge content in the SiGe layer of Ni/SiGe/Si(0 0 1) after thermal annealing compared to the case of cap-Si/SiGe/Si(0 0 1). The results indicate that the strain relaxation of the SiGe layers in NiSi/SiGe/Si(0 0 1) is related to the phenomena of NiSi agglomeration and penetration into the SiGe layer during silicidation at elevated anneal temperatures ≥750 °C. At elevated T_A ≥ 750 °C, Ge diffused into the intact cap-Si area during silicidation.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Structural, AC, and DC magnetic properties of Zn1−xCoxFe2O4

Structural, AC and DC magnetic properties of polycrystalline Zn_1−xCo_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures (1100-1300 °C), and various dwell times (0.2-15 h) have been investigated thoroughly. The bulk density of the Zn_0.60Co_0.40Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1100 to 1250 °C, and above 1250 °C the bulk density decreases slightly. The Zn_0.80Co_0.20Fe₂O₄ samples show similar behavior of changes to that of Zn_0.60Co_0.40Fe₂O₄ samples except that the bulk density is found to be highest at 1200 °C. The DC magnetization as a function of temperature curves show that the Zn_0.60Co_0.40Fe₂O₄ sample is ferrimagnetic at room temperature while the Zn_0.80Co_0.20Fe₂O₄ sample is paramagnetic at room temperature. The T_c of Zn_0.80Co_0.20Fe₂O₄ sample is found to be 170 K from DC magnetization measurement. Separate measurement (AC magnetization), initial permeability as a function of temperature shows that the T_c of the Zn_0.60Co_0.40Fe₂O₄ sample is 353 K. Slight variation of T_c is observed depending on sintering condition. The initial permeability for the Zn_0.60Co_0.40Fe₂O₄ composition sintered at 1250 °C is found to be maximum.     

Increase in Tc and spin glass transition in La0.9Ca0.1Mn1−yCryO3 (y=0, 0.1 and 0.2)

We report on the structural, frequency dependent ac susceptibility, dc magnetization and magnetoresistance (MR) measurements on polycrystalline samples of La_0.9Ca_0.1Mn_1−yCr_yO₃ (y=0, 0.1 and 0.2) prepared by sol-gel technique. For y=0, a paramagnetic to ferromagnetic transition is observed at T_c=136 K. Both for y=0.1 and 0.2, T_c increases from 136 to 180 K. For y=0, the imaginary part of the ac susceptibility shows a broad transition at T_f<T_c which does not depend very much on the frequency. However, for y=0.1 and 0.2, the frequency dependence resembles that of a spin glass. Though all the three samples show a semi-conducting behavior between 300 and 5 K, a negative MR is observed corresponding to T_c and T_f. The value of MR decreases for the Cr substituted samples.     

The roles of “ammonium” and “hydrogen-bond” protons in single crystals of the superionic conductor NH4HSeO4 by H NMR relaxation

The variations with temperature of the line-shape, spin-lattice relaxation time, T₁, and spin-spin relaxation time, T₂, of the ¹H nuclei in NH₄HSeO₄ single crystals were investigated, and with these ¹H NMR results we were able to distinguish the crystals’ “ammonium” and “hydrogen-bond” protons. The line width of the signal due to the ammonium protons abruptly narrows near the temperature of the superionic phase transition, T_SI, which indicates that they play an important role in this phase transition. The ¹H T₁ for NH₄⁺ and HSeO₄⁻ in NH₄HSeO₄ do not change significantly near the ferroelectric phase transition of T_C1 (=250 K) and the incommensurate phase transition of T_i (=261 K), whereas they change near the temperature of the superionic phase transition T_SI (=400 K). Our results indicate that the main contribution to the low-temperature phase transition below T_SI is that of the molecular motion of ammonium and hydrogen-bond protons, and the main contribution to the conductivity at high temperatures above T_SI is the breaking of the O-H?O bonds and the formation of new H- bonds in HSeO₄⁻. In addition, we compare these results with those for the NH₄HSO₄ and (NH₄)₃H(SO₄)₂ single crystals, which have similar hydrogen-bonded structure.     

Impedance response of polycrystalline tungsten oxide

Polycrystalline tungsten oxide (WO₃) pellets were prepared by conventional ceramic processing technology. The ac small-signal electrical data acquired in the frequency (f) range 100 Hz≤f≤1 MHz at temperature (T) ranging the 31-100 °C revealed distinct semicircular relaxation in the impedance plane. This relaxation indicates device behavior originating from the grain boundaries. The lumped grain impedance associated with the device action remained too small to detect when the large resistance scale is realized. The semicircular relaxation is thermally activated indicating 0.58 eV as the activation energy for the relaxation time.