Synthesis, effect of capping agents, structural, optical and photoluminescence properties of ZnO nanoparticles

Zinc oxide nanoparticles were synthesized using chemical method in alcohol base. During synthesis three capping agents, i.e. triethanolamine (TEA), oleic acid and thioglycerol, were used and the effect of concentrations was analyzed for their effectiveness in limiting the particle growth. Thermal stability of ZnO nanoparticles prepared using TEA, oleic acid and thioglycerol capping agents, was studied using thermogravimetric analyzer (TGA). ZnO nanoparticles capped with TEA showed maximum weight loss. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for structural and morphological characterization of ZnO nanoparticles. Particle size was evaluated using effective mass approximation method from UV-vis spectroscopy and Scherrer's formula from XRD patterns. XRD analysis revealed single crystal ZnO nanoparticles of size 12-20 nm in case of TEA capping. TEA, oleic acid and thioglycerol capped synthesized ZnO nanoparticles were investigated at room temperature photoluminescence for three excitation wavelengths i.e. 304, 322 and 325 nm, showing strong peaks at about 471 nm when excited at 322 and 325 nm whereas strong peak was observed at 411 for 304 nm excitation.     

Strongly enhanced free-exciton luminescence in microcrystalline CsPbCl3 films produced via the amorphous phase

High-quality CsPbCl₃ films composed of crystallites with narrow size distributions are achieved for various size levels, from microcrystalline to polycrystalline, by a novel heat-treatment method applied to the same amorphous films. Their photoluminescence is dominated by free-exciton emission at every size level without showing trapped-exciton emission in great contrast to the case for single crystals. The microcrystalline state shows more than an order of magnitude stronger free-exciton emission than the polycrystalline state, and exhibits intense stimulated emission under high-power excitation.     

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

The photoluminescence, photoconductivity and absorption in GaSe_0.9Te_0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe_0.9Te_0.1 alloy crystals compared to GaSe crystals. The long wavelength tails of interband photoluminescence, photoconductivity and absorption spectra are determined by the free exciton states and show an Urbach-Martienssen-type dependence to the photon energy. The maxima of the extrinsic photoluminescence and photoconductivity spectra were found to be determined by the acceptor centers with an energy of E_A=E_V+0.19 eV formed by the polytypism and defects complexes that include Se and Te anions.     

Correlation of photoluminescence of (Y, Ln)VO4:Eu (Ln=Gd and La) phosphors with their crystal structures

We have studied the photoluminescence (PL) of (Y, Ln)VO₄:Eu³⁺ (Ln=La and Gd) phosphors and the correlation of the PL of those phosphor with their crystal structure. It is found that (Y, Gd)VO₄:Eu³⁺ phosphors have the same crystal structure as YVO₄:Eu³⁺, which is tetragonal with a little different lattice parameters. In the case of (Y, La)VO₄:Eu³⁺ phosphors, however, the gradual change from tetragonal to monoclinic structure of host lattice was observed as the amount of La ion increased. To investigate the PL property of (Y, Ln)VO₄:Eu³⁺ (Ln=La and Gd) phosphors, vacuum ultraviolet (VUV) and ultraviolet (UV) excitation were used. The favorable crystal structure for the PL intensity of orthovanadate phosphor under 147 and 254 nm excitation was tetragonal containing Gd ion and under 365 nm excitation was monoclinic containing La ion which might have the lowest site symmetry for Eu³⁺ ion.     

SrS:Ce/ZnS:Mn-A di-band phosphor for near-UV and blue LED-converted white-light emitting diodes

The SrS:Ce/ZnS:Mn phosphor blends with various combination viz 75:25, 50:50 and 25:75 were assign to generate the white-light emission using near-UV and blue-light emitting diodes (LED) as an excitation source. The SrS:Ce exhibits strong absorption at 427 nm and the corresponding intense emission occurs at 480 and 540 nm due to electron transition from 5d(²D)−4f(²F_5/2, _7/2) of Ce³⁺ ion as a result of spin-orbit coupling. The ZnS:Mn excited under same wavelength shows broad emission band with λ_max=582 nm originates due to 3d (⁴G−⁶S) level of Mn²⁺. Photoluminescence studies of phosphor blend excited using near-UV to blue light confirms the emitted radiation varies from cool to warm white light in the range 430-600 nm, applicable to LED lightings. The CIE chromaticity coordinate values measured using SrS:Ce/ZnS:Mn phosphor blend-coated 430 nm LED pumped phosphors in the ratio 75:25, 50:50 and 25:75 are found to be (0.235, 0.125), (0.280, 0.190) and (0.285, 0.250), respectively.     

Low-temperature photoluminescence spectra of highly excited quantum wires

Optical spectra of highly excited quantum wires at low temperatures have been studied within the dynamical screening approximation. We found a strong Fermi-edge singularity (FES) in the photoluminescence spectra. The spectral shape and FES intensity strongly depend on temperature in agreement with recent experimental results.     

Ar irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO₂ during Ar⁺ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar⁺ ion fluence of 10¹⁵ ions cm⁻², and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 10¹⁵ ions cm⁻², and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar⁺-irradiated sample can be partly recovered after annealing at 800 °C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO₂.     

The structure and photoluminescence properties of Cr-doped SiC films

Cr-doped SiC films are prepared by the RF-magnetron sputtering technique on Si substrates with a composite target of a single-crystalline SiC containing several Cr pieces on the surface. The as-deposited films are annealed in the temperature of 1000 °C under nitrogen ambient. The structure of the samples has been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman scattering measurement. The results show that the SiC crystal is formed and that majority of Cr doped in the SiC resulted in the formation of the C clusters. Then the photoluminescence (PL) spectra of the samples are observed in the visible range at room temperature. The optical properties of the samples have also been discussed briefly. We attribute the origin of the 412-nm PL band to a kind of C cluster center.     

Interference effects on the photoluminescence spectrum of GaN/InxGa1−xN single quantum well structures

Interference effects in the spectra of the III-nitride epilayers can produce ambiguities and misinterpretations. This problem has been addressed in the literature (e.g. [L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies, Solid State Commun. 115 (2000) 575]) and a few approaches are given to produce an interference function with which the interference effects can be removed. However, the calculated interference functions may provide over or underestimated corrections because of scattering in the values of the optical parameters of the materials used in the calculation. This paper first describes a model that is developed to derive an interference function. Then, it presents the fit parameters required in the calculation of the interference function that are found experimentally. The experiments compare the corrected spectrum with an interference free spectrum, which can be obtained if the geometry of the light collection is adjusted to the Brewster angle. In this way, one avoids large estimations errors, since the validation data are derived experimentally from the same material, and under the same excitation conditions. The model has been applied to correct the low-temperature, low excitation density photoluminescence measurements of a set of five GaN/InGaN single quantum well samples with different indium concentrations. The effectiveness of this proposed technique is illustrated by the so found results.     

Synthesis and optical properties of KZnLa0.99Nd0.01(VO4)2 triple vanadate(V)—New promising laser materials

In an attempt to find a neodymium-vanadate system with long lifetime of ⁴F_3/2 level and relatively strong ⁴F_3/2→⁴I_11/2 emission for laser applications, the optical properties of Nd³⁺ in a new KZnLa(VO₄)₂ host is reported. The crystalline samples were obtained at 900 °C in air. The samples were crystallized in monoclinic system and were isostructural with KZnLa(PO₄)₂. KZnLa_0.99Nd_0.01(VO₄)₂ strongly emits in the near infrared range with the maxima at 871.6 and 1057 nm upon excitation through the ⁴F_5/2 level (808 nm) or by the charge transfer bands of VO₄³⁻. The lifetime of ⁴F_3/2 level of Nd³⁺ ion is larger than that observed in other neodymium-vanadates systems.     

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to −4 Å/°C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength.     

The structural and optical properties of ZnO/Si thin films by RTA treatments

ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size.     

Energy-transferred photoluminescence from thiophene/phenylene oligomer thin films

Photoluminescence (PL) based on Förster energy transfer between p-sexiphenyl (p-6P) and 5,5′-bis(4-phenylyl)-2,2′-bithiophene (BP2T) was investigated for their coevaporated and laminated thin films. In the former films, fluorescence quenching of the p-6P was accompanied by appearance of BP2T fluorescence, which indicated existence of the energy transfer between the donors and the acceptors. The latter films were fabricated by successive depositions of p-6P, MgF₂ and BP2T in which the thickness of the MgF₂ spacer was varied. The energy-transferred acceptor fluorescence was suppressed by the spacer thicker than the Förster distance (∼10 nm).     

Anisotropy of photoconductivity and nonlinear effects in GaSe monocrystals at high optical excitation

In this work, the photoelectric properties of gallium selenide (GaSe) monocrystals in the edge absorption region, with various configurations of current contacts, at low and high optical excitation levels are investigated. The photoconductivity spectrum behavior is determined by localized electronic and excitonic states along c-axis. It is shown that the localization of electronic and excitonic states in one-dimensional fluctuation potential along c-axis results to an anisotropy in photoconductivity spectrum at various current contacts configurations. At E⊥c the photoconductivity is observed in the hν < E_g and hν > E_g regions. In the case of hv < E_g, the maximum photoconductivity, in the impurity and exciton absorption region are observed at 1.975 eV and 2.102 eV, respectively. With rising of excitation energy level, suppression of photoconductivity in the exciton absorption region and increases in impurity absorption region is observed. At E||c contact configuration, the considerable photoconductivity is observed only in the impurity absorption region, which also increases with rising of excitation level. It is supposed that, suppression of photoconductivity in the exciton absorption region at high excitation levels is connected with exciton-exciton interaction, which results to a nonlinear light absorption. The results are compared with the absorption and photoluminescence measurements.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

The luminescent properties of CaYBO4:Ln(Ln=Eu, Tb) under UV-VUV range

The luminescent properties of CaYBO₄:Ln(Ln=Eu³⁺, Tb³⁺) were investigated under ultraviolet (UV) and vacuum ultraviolet (VUV) region. The CT band of Eu³⁺ at about 245 nm blue-shifted to 230 nm in VUV excitation spectrum; the band with the maximum at 183 nm was considered as the host lattice absorption. For the sample of CaYBO₄:0.08Tb³⁺, the bands at about 235 and 263 nm were assigned to the f-d transitions of Tb³⁺ and the CT band of Tb³⁺ was calculated according to Jφrgensen's theory. Under UV and VUV excitation, the main emission of Eu³⁺ corresponding to the ⁵D₀-⁷F₂ transition located at about 610 nm and two intense emission of Tb³⁺ from the ⁵D₄-⁷F₅ transition had been observed at about 542 and 552 nm, respectively. With the incorporation of Gd³⁺ into the host lattice of CaYBO₄, the luminescence of Tb³⁺ was enhanced while that of Eu³⁺ was decreased because of their different excitation mechanism.     

TL, EPR and optical absorption in natural grossular crystal

Grossular is one of six members of silicate Garnet group. Two samples GI and GII have been investigated concerning their luminescence thermally stimulated (TL). EPR and optical absorption and the measurements were carried out to find out whether or not same point defects are responsible for all three properties. Although X-rays diffraction analysis has shown that both GI and GII have practically the same crystal structure of a standard grossular crystal, they presented different behavior in many aspects. The TL glow curve shape, TL response to radiation dose, the effect of annealing at high temperatures before irradiation, the dependence of UV bleaching parameters on peak temperature, all of them differ going from GI to GII. The EPR signals around g=2.0 as well as at g=4.3 and 6.0 have much larger intensity in GI than in GII. Very high temperature (>800 °C) annealing causes large increase in the bulk background absorption in GI, however, only very little in GII. In the cases of EPR and optical absorption, the difference in their behavior can be attributed to Fe³⁺ ions; however, in the TL case one cannot and the cause was not found as yet.     

Spectral performance and intensive green upconversion luminescence in Er/Yb-codoped NaY(WO4)2 crystal

Using Czochralski (CZ) pulling method, an Er³⁺/Yb³⁺-codoped NaY(WO₄)₂ crystal was prepared. Absorption spectra, emission spectra and excitation spectra of this crystal were measured at room temperature. Some optical parameters, such as intensity parameters, spontaneous emission probabilities and lifetimes, were calculated from absorption spectra with Judd-Ofelt (J-O) theory. Upconversion luminescence excited by a 970 nm diode laser was studied. In this crystal, green upconversion luminescence is particularly intensive. Energy transfer mechanisms that play an important role in upconversion processes were analyzed. Two cross-relaxation processes: ⁴G_11/2 + ⁴I_9/2 → ²H_11/2 (or ⁴S_3/2) + ²H_11/2 (or ⁴S_3/2), and ⁴G_11/2 + ⁴I_15/2 → ²H_11/2 (or ⁴S_3/2) + ²I_13/2, which contribute to the intensive green luminescence under 378 nm excitation, were put forward. Background energy transfer ⁴G_11/2(Er³⁺) + ²F_7/2(Yb³⁺) → ⁴F_9/2(Er³⁺) + ²F_5/2(Yb³⁺) was also demonstrated.     

Temperature-dependent photoluminescence in La2/3Ca1/3MnO3

Visible photoluminescence and its temperature dependence of La_2/3Ca_1/3MnO₃ in the temperature range 138-293 K were measured. It was observed that the main broad band centered at ∼1.77 eV with the shoulders at ∼1.57 and ∼1.90 eV existed in the entire temperature range. It can be well fitted by three Gaussian curves B₁, B₂ and B₃ centered at ∼1.52, ∼1.75 and ∼1.92 eV, respectively. The intensities of the peak B₁ and B₂ vary as temperature increases. In the entire temperature range, the intensity of B₁ increases with increasing temperature, whereas that of B₂ decreases. The photoluminescence mechanisms for La_2/3Ca_1/3MnO₃ are presented based on the electronic structures formed by the interactions among spin, charge and lattice, in which B₁ was identified with the charge transfer excitation of an electron from the lower Jahn-Teller split e_g level of a Mn³⁺ ion to the e_g level of an adjacent Mn⁴⁺ ion, B₂ is assigned to the transition between the spin up and spin down e_g bands separated by Hund's coupling energy E_J and B₃ is attributed to the transition, determined by the crystal field energy E_C, between a t_2g core electron of Mn³⁺ to the spin up e_g bands of Mn⁴⁺ by a dipole allowed charge transfer process.     

Optical properties of high-Al-content crack free AlxGa1−xN (x<0.67) films grown on Si(111) by molecular-beam epitaxy

We report on the optical properties of high-Al-content crack free Al_xGa_1−xN (x<0.67) films grown by molecular-beam epitaxy on Si(111) substrates using ammonia as nitrogen source. The energetic position of the A free exciton as a function of the Al content is determined from photoluminescence and reflectivity measurements at low temperature. A bowing parameter of b=1 eV is deduced from these measurements. The excitonic linewidth increases as a function of Al concentration. The observed variation agrees very well with the one calculated using a model in which the broadening effect is assumed to be due to alloy compositional disordering.