Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

Investigation of spectroscopic properties and thermal stability of Er/Yb-co-doped Bi2O3-B2O3-Ga2O3 glasses

A series of Er³⁺/Yb³⁺-co-doped 60Bi₂O₃-(40−x) B₂O₃ -xGa₂O₃ (BBGA x=0, 4, 8, 12, 16 mol%) glasses have been prepared. The absorption spectra, emission spectra, fluorescence lifetime of Er³⁺:⁴I_13/2 level and thermal stability were measured and investigated. Three Judd-Ofelt intensity parameters Ω_t (t=2,4,6) (Ω₂=(4.67-5.93)×10⁻²⁰ cm², Ω₄=(1.50-1.81)×10⁻²⁰ cm², Ω₆=(0.92-1.17)×10⁻²⁰ cm²) of Er³⁺ ions were calculated by Judd-Ofelt theory. It is found that the Ω₆ first increases with the increase of Ga₂O₃ content from 0 to 8 mol% and then decreases, which is mainly affected by the number of non-bridging oxygen ions of the glass network. The high peak of stimulated emission cross-section () of Er³⁺: ⁴I_13/2→⁴I_15/2 transition were obtained according to McCumber theory and broad full width at half maximum (FWHM=69-76 nm) of the ⁴I_13/2→⁴I_15/2 transition of Er³⁺ ions were measured. The results indicate that these new BBGA glasses can be used as a candidate host material for potential broadband optical amplifiers.     

Spectral properties of Nd:Ca2Nb2O7 crystal

This paper reports the spectral properties of Nd³⁺:Ca₂Nb₂O₇. The spectral parameters of Nd³⁺ in Nd³⁺:Ca₂Nb₂O₇ crystal have been investigated based on Judd-Ofelt theory. The spectral parameters were obtained. The parameters of line strengths Ω_λ are Ω₂=4.967×10⁻²⁰ cm², Ω₄=5.431×10⁻²⁰ cm², Ω₆=5.693×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 122 μs, 103 μs and 84.4%, respectively. The fluorescence branch ratios calculated: β₁=0.425, β₂=0.479, β₃=0.091, β₄=0.004. The emission cross section at 1068 nm is 6.204×10⁻²⁰ cm².     

Luminescence enhancement of ZnGa2O4:Mn by Ge and Li doping

Structural and optical properties of ZnGa₂O₄:Ge⁴⁺ and ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors were investigated by using X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL) measurements. The XRD patterns show that Ge-doped ZnGa₂O₄ has a spinel phase and its lattice constant increases with respect to ZnGa₂O₄. Emission wavelength shifts from 400 to 360 nm in comparison with ZnGa₂O₄ when Ge is doped in ZnGa₂O₄ and a peak related with oxygen defect was observed in Ge-doped ZnGa₂O₄. The CL luminance of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors is seven times brighter than that of ZnGa₂O₄:Mn²⁺. This drastic luminance improvement can be attributed to Ge doping in ZnGa₂O₄ acting as donor ion and Li doping resulting in increasing conductivity of ZnGa₂O₄. These results indicate that ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.     

Optical absorption and thermoluminescence properties of ZnF2-MO-TeO2 (MO=As2O3, Bi2O3 and P2O5) glasses doped with chromium ions

Optical absorption, thermoluminescence, infrared spectra and differential thermal analysis of three different tellurite glass systems viz., ZnF₂-As₂O₃-TeO₂, ZnF₂-Bi₂O₃-TeO₂ and ZnF₂-P₂O₅-TeO₂ containing 0.4% of Cr₂O₃, have been investigated. Results have been analysed in the light of different oxidation states of chromium ion and the most suitable host for lasing Cr³⁺ ions has been identified and reported.     

Luminescence of Cr ions associated with surpassing the green-emissive defect centers in β-Ga2O3

Photoluminescence of undoped and Cr³⁺-doped β-Ga₂O₃ was investigated. The transparent, undoped β-Ga₂O₃ film was successfully prepared by thermal conversion from GaOOH. The film exhibited predominant green luminescence in response to ultraviolet light excitation at 250 nm. This luminescence behavior, which was proposed to result from the oxygen defect centers, was used in examining excitation and emission mechanisms for Cr³⁺ ions doped in β-Ga₂O₃. It was found that red luminescence of Cr³⁺ surpasses green luminescence of the host lattice, as evidenced by the dependence of the spectral structure on the Cr³⁺ concentration. The excitation of Cr³⁺ was then suggested to be caused by the energy transfer from Ga³⁺O₆ octahedra present in the monoclinic β-Ga₂O₃ lattice.     

The origin of emission color of reduced and oxidized ZnGa2O4 phosphors

The Ga-O octahedral structure of the reduced and the oxidized ZnGa₂O₄ phosphors was investigated using Reitveld refinement. The correlation between the structural change and the changing emission color was studied. The emission peak shifts to shorter wavelength because of the more contribution of a variation of ligand charge than that of bond length to crystal field. The blueshift behavior of the reduced ZnGa₂O₄ was also observed in Ge⁴⁺-doped ZnGa₂O₄. In addition, Li⁺ ions doping in ZnGa₂O₄ generate extra oxygen ions, and Li⁺-doped ZnGa₂O₄ shows the same emission color as the oxidized ZnGa₂O₄.     

Photoluminescence properties of the ZnO-CdO-TeO2 system doped with the Tband Yb ions

ZnO-CdO-TeO₂ was employed as a host of Tb³⁺ and Yb³⁺ ions. The matrix doped with Tb³⁺ presents a crystalline/amorphous structure, while the same matrix shows an amorphous structure when it is doped with Yb³⁺. Optical absorption spectra, measured by using photoacoustic (PA) spectroscopy, allowed to determine the band gap, which is localized in the range 3.47-3.60 eV. Both kinds of ions Tb³⁺ and Yb³⁺ in the ZnO-CdO-TeO₂ matrix show emissions that are characteristic of such ions. For Tb³⁺ the signals were allocated in 548, 586, 622 nm, respectively, while for Yb³⁺ only one signal was registered at 1000 nm.     

SiO2-PbF2-CdF2 glasses and glass ceramics

Lead-Cadmium fluorosilicate stable glasses were prepared and the vitreous domain region determined in the composition diagram. Characteristic temperatures were obtained from thermal analysis and the structural studies performed illustrate clearly the role played by lead atoms in the glasses crystallization behavior and the glass-forming ability of cadmium atoms. The occurrence of either a cubic lead fluoride or a lead-cadmium fluoride solid solution in crystallizing samples was found to be dependent on Er³⁺ doping. The optically active ions were found to concentrate in the crystalline phase and in fact play the role of nucleating agent as suggested from X-ray diffraction and EXAFS measurements.     

Spectroscopic properties of Yb ions in La2(WO4)3 crystal

Yb³⁺-doped La₂(WO₄)₃ single crystals were grown by the Czochralski technique. Absorption and fluorescence spectra of the crystal were recorded at the room temperature. The stimulated emission cross-sections of Yb³⁺ ions were calculated using the reciprocity method and Fuchtbauer-Ladenburg formula, respectively. The fluorescence decay curves of ²F_5/2 manifold of Yb³⁺ ions were recorded at room temperature for both crystal and powder samples. The effect of radiation trapping on the spectroscopic properties is discussed. Comparison with other Yb³⁺-doped laser crystals is made. The results show that Yb³⁺:La₂(WO₄)₃ crystal is a promising laser material.     

Study on the influence of TiO2 on the insulating strength of ZnO-ZnF2-B2O3 glasses by means of dielectric properties

ZnO-ZnF₂-B₂O₃ glasses containing small concentrations of TiO₂ ranging from 0 to 0.6 mol% were prepared. Dielectric properties (constant ε′, loss tan δ, ac conductivity σ_ac over a moderately wide range of frequency and temperature at room temperature in air medium) of these glasses have been studied. The results of these studies were analyzed with the aid of data on optical absorption, ESR and IR spectra of these glasses. The analysis suggests that when the concentration of TiO₂>0.2 mol%, the titanium ions, in addition to Ti⁴⁺ state, co-exist in Ti³⁺ state, act as modifiers and reduce the breakdown strength.     

Judd-Ofelt parameters of Er in transparent TeO2-based nanocrystallized glasses

Transparent Er³⁺-doped bulk nanocrystallized (size of nanocrystals: ∼40 nm) glasses of 15K₂O·15Nb₂O₅·70TeO₂·0.5Er₂O₃ and 10BaO·10Gd₂O₃·80TeO₂·0.5Er₂O₃ are prepared, and the Judd-Ofelt parameters, (t=2, 4, 6), of Er³⁺ are evaluated from optical absorption spectra. The change in the molar polarizability due to the nanocrystallization is small in both samples, but a clear decrease in the mean atomic volume due to the nanocrystallization, i.e. more close atom packing, is observed. In both systems, a large decrease is observed in the parameter due to the nanocrystallization, indicating that the degree of the site symmetry of Er³⁺ ions in nanocrystallized glasses is much higher than that in the precursor glasses. The decrease in the and parameters due to the crystallization is small, suggesting that the covalency of Er³⁺-O bonds in nanocrystals is not so different from that in the precursor glasses.     

Energy transfer among three luminescent centers in full-color emitting ZnGa2O4:Mn, Cr phosphors

The ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors show three colors; the blue band of 380 nm from the charge transfer between Ga-O, the green band of 505 nm from Mn²⁺ and the red band of 705 nm from Cr³⁺. As a variation of Mn²⁺ or Cr³⁺ concentrations in ZnGa₂O₄:Mn²⁺, Cr³⁺, the relative emission intensity can be tuned. This phenomenon is explained in terms of the energy transfer based on four factors: the spectral overlap between the energy donors (Ga-O) and the energy accepters of Mn²⁺ or Cr³⁺, the absorption cross section of the energy accepters, the distance between them, and the decay time of the energy donors. ZnGa₂O₄:0.0025Mn²⁺, 0.010Cr³⁺ shows the CIE coordinates of x=0.4014, y=0.3368, which is a pure white light. The single-phased full-color emitting ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors can be applied to illumination devices.     

First principles study on electronic structure of β-Ga2O3

We have studied the electronic structure of β-Ga₂O₃ using the first principles full-potential linearized augmented plane wave method. It is found that β-Ga₂O₃ has an indirect band gap with a conduction band minimum (CBM) at Γ point and a valence band maximum on the E line. The anisotropic optical properties are explained by the selection rule of the band-to-band transitions. On the other hand, the shape of the CBM is almost isotropic and, therefore, the observed electronic anisotropy in the n-type semiconducting state should not be attributed to the properties of a perfect lattice. The Burstein-Moss shift is discussed using the effect of several allowed transitions between the levels of the valence band and the CBM.     

Potential PDP phosphors with strong absorption around 172 nm: Rare earth doped NaLaP2O7 and NaGdP2O7

NaLaP₂O₇ and NaGdP₂O₇ powder samples are prepared by solid-state reactions at 750 and 600 °C, respectively, and the VUV-excited luminescence properties of Ln³⁺ (Ln=Ce, Pr, Tb, Tm, Eu) in both diphosphates are studied. Ln³⁺ ions in both hosts show analogous luminescence. For Ce³⁺-doped samples, the five Ce³⁺ 5d levels can be clearly identified. As for Pr³⁺ and Tb³⁺-doped samples, strong 4f-5d absorption band around 172 nm is observed, which matches well with Xe-He excimer in plasma display panel (PDP) devices. As a result, Pr³⁺ can be utilized as sensitizer to absorb 172 nm VUV photon and transfer energy to appropriate activators, and Tb³⁺-doped NaREP₂O₇(RE=La, Gd) are potential 172 nm excited green PDP phosphors. For Tm³⁺ and Eu³⁺-doped samples, the Tm³⁺-O²⁻ charge transfer band (CTB) is observed to be at 177 nm, but the CTB of Eu³⁺ is observed at abnormally low energy position, which might originate from multi-position of Eu³⁺ ions. The similarity in luminescence properties of Ln³⁺ in both hosts indicates certain structural resemblance of coordination environment of Ln³⁺ in the two sodium rare earth diphosphates.     

Temperature-dependent photoluminescence spectra of Er-Tm-codoped Al2O3 thin film

Er-Tm-codoped Al₂O₃ thin films with different Tm to Er concentration ratios were synthesized by cosputtering from separated Er, Tm, Si, and Al₂O₃ targets. The temperature dependence of photoluminescence (PL) spectra was studied. A flat and broad emission band was achieved in the 1.4-1.7 μm and the observed 1470, 1533 and 1800 nm emission bands were attributed to the transitions of Tm³⁺: ³H₄ → ³F₄, Er³⁺: ⁴I_13/2 → ⁴I_15/2 and Tm³⁺: ³F₄ → ³H₆, respectively. The temperature dependence is rather complicated. With increasing measuring temperature, the peak intensity related to Er³⁺ ions increases by a factor of five, while the Tm³⁺ PL intensity at 1800 nm decreases by one order of magnitude. This phenomenon is attributed to a complicated energy transfer (ET) processes involving both Er³⁺ and Tm³⁺ and increase of phonon-assisted ET rate with temperature as well. It should be helpful to fully understand ET processes between Er and Tm and achieve flat and broad emission band at different operating temperatures.     

Long-lasting afterglow in Tb-doped SiO2-Ga2O3-CaO-Na2O glasses and its sensitization by Yb

Long-lasting afterglow due to Tb³⁺ ions has been observed in a Tb³⁺-doped SiO₂-Ga₂O₃-CaO-Na₂O glass, where a 4s empty orbital of Ga³⁺ probably works as an electron-trapping center. The sensitization effect of Yb³⁺ on the afterglow has been noticed.     

Polarized spectroscopic properties of Nd-doped KGd(WO4)2 single crystal

The polarized absorption spectra, infrared fluorescence spectra, upconversion visible fluorescence spectra, and fluorescence decay curve of orientated Nd³⁺:KGd(WO₄)₂ crystal were measured at room-temperature. Some important spectroscopic parameters were investigated in detail in the framework of the Judd-Ofelt theory and the Fuchtbauer-Ladenburg formula. The effect of the crystal structure on the spectroscopic properties of the Nd³⁺ ions was analyzed. The relation among the spectroscopic parameters and the laser performances of the Nd³⁺:KGd(WO₄)₂ crystal was discussed.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Synthesis and luminescent properties of europium-activated Ca2SnO4 phosphors by sol-gel method

In this paper, the Ca₂SnO₄:Eu³⁺ phosphor was prepared by low-temperature sol-gel method. The influence of calcined temperature and time on structure of Ca₂SnO₄:Eu³⁺ was investigated by using X-ray powder diffraction (XRD). The experimental results show that the dried gel was crystallized to the pure orthorhombic phase after calcination at 900 °C in air for 6 h. These phosphors have displayed bright red color under a UV source. The richness of the red color has been verified by determining their color coordination from the CIE standard charts, and this red emission has been assigned to ⁵D₀→⁷F₂ electric dipole transition at 616 and 620 nm. The excellent luminescence properties make it possible as a good candidate for plasma display panel (PDP) application.