Photocatalytic O2 evolution performances of Cd1+xIn2−2xSnxO4 (x=0.1, 0.3, 0.5, 0.7, 1.0) conducting oxides

The conducting oxides solid solutions of Cd_1+xIn_2−2xSn_xO₄ (x=0.1, 0.3, 0.5, 0.7, 1.0) were prepared via a solid state reaction method. The band gaps were estimated to be 2.4 eV for x=1.0, 2.5 eV for x=0.7, 2.6 eV for x=0.5, 2.7 eV for x=0.3 and 2.8 eV for x=0.1. Oxygen could be evolved over Cd₂SnO₄ under the irradiation of Xe-lamp or even visible light (λ>420 nm), while the others could only work in the UV-light range. Raman showed the cation distribution in Cd₂SnO₄ is ordered, while that in the others is disordered. The cations distribution was proposed to be the cause of the difference in photocatalytic O₂-evolution activities.     

Thermoelectric properties of the Bi2−xYxRu2O7 (x=0-2) pyrochlores

Electrical conductivity and Seebeck coefficient for the Bi_2−xY_xRu₂O₇ pyrochlores with x=0.0,0.5,1.0,1.5,2.0 were measured in the temperature range of 473-1073 K in air. With increasing Bi content, the temperature dependence of the electrical conductivity changed from semiconducting to metallic. The signs of the Seebeck coefficient were positive in the measured temperature range for all the samples, indicating that the major carriers were holes. The temperature dependence of the Seebeck coefficient for the Y₂Ru₂O₇ indicated the thermal activation-type behavior of the holes, while that for the Bi_2−xY_xRu₂O₇ with x=0.0-1.5 indicated the itinerant behavior of the holes. The change in the conduction behavior from semiconductor to metal with increasing Bi content is consistent with the increase in the overlap between the Ru4d t_2g and O2p orbitals, but the mixing of Bi6s, 6p states at E_F may not be ruled out. The thermoelectric power factors for the Bi_2−xY_xRu₂O₇ with x=1.5 and 2.0 were lower than 10⁻⁵ W m⁻¹ K⁻² and those with x=0.0,0.5,1.0 were around 1-3×10⁻⁵ W m⁻¹ K⁻².     

Anomalous magnetism in three-dimensional orthogonal dimer lattice system: (Ba1−xSrx)2Ru3O9 (x≈0.35)

The magnetic and transport properties of a new cubic KSbO₃-type ruthenate, (Ba_1−xSr_x)₂Ru₃O₉ (x≈0.35), have been investigated. The crystal structure has a singular geometry in which ruthenium atoms form an ideal three-dimensional orthogonal dimer lattice. The magnetic susceptibility is Pauli-paramagnetic but exhibits an anomalous temperature dependence reminiscent of a gap-like behavior. The resistivity exhibits a metallic behavior, except for a rise at low temperature.     

Preparation of LixCa1−xTiO3 solid electrolytes by the sol-gel method

Solid electrolytes based on lithium doped CaTiO_3,Li_xCa_1−xTiO₃ (x=0-0.5) were prepared by the sol-gel method in an ethanol and water mixture medium. Phase identification and morphology observation of the products were carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the Li_xCa_1−xTiO₃ powders sintered above 700 ^°C are of cubic perovskite structure and the mean size of Li_xCa_1−xTiO₃ powders is about 80 nm. A study of ionic conductivity by AC impedance implies that the conductivity of Li_xCa_1−xTiO₃ increases with the increase of substituted Li⁺ ions and reaches a maximum value of 4.53×10⁻⁴ S cm⁻¹ at x=0.1, and then decreases for x>0.1.     

Nonlinear electrical properties and DC accelerated aging characteristics of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3-based varistors

The nonlinear electrical properties and stability against DC accelerated aging stress of various varistors, which are composed of ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Dy₂O₃ (ZPCCD)-based ceramics, was investigated as a function of Dy₂O₃ content. The varistors with Dy₂O₃ exhibited a high nonlinear exponent above 30, compared with that without Dy₂O₃. The varistor with 0.5 mol% Dy₂O₃ exhibited the highest nonlinearity, with a nonlinear exponent of 66.6 and a leakage current of 1.2 μA. Furthermore, this varistor showed the high stability, in which the variation rate of varistor voltage, of nonlinear exponent, and of leakage are −1.9, −10.5, and +275.0%, respectively, under DC accelerated aging stress, 0.95 V_1 mA/150 °C/24 h.     

Enhancement of the anomalous Hall effect and spin glass behavior in the bilayered manganite La2−2xSr1+2xMn2O7

The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La_2−2xSr_1+2xMn₂O₇ (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients at low temperatures below 50 K, a region in which experimental evidence for the spin glass state has been found in a low magnetic field of 1 mT. The origin of the anomalous behavior of the Hall resistivity relevant to magnetic states may lie in the intrinsic microscopic inhomogeneity in a quasi-two-dimensional electron system.     

Kondo lattice behaviour in CePt2(Si1−xSnx)2 alloys

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt₂(Si_1−xSn_x)₂ system. Results of X-ray diffraction indicate that the tetragonal region of the CePt₂(Si_1−xSn_x)₂ alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature T_max=63 K for the parent compound CePt₂Si₂ and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of T_max in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N(E_F). A value of |JN(E_F)|=0.060±0.009 for the parent compound is obtained from the experimental results.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Structural and Magnetic Properties of NiFe2−2xSnxCuxO4

The substituted nickel ferrite (NiFe_2−2xSn_xCu_xO₄, x=0, 0.1, 0.2, 0.3) was prepared by the conventional ceramic method. The effect of substitution of Fe³⁺ ions by Sn⁴⁺ and Cu²⁺ cations on the structural and magnetic properties of the ferrite was studied by means of ⁵⁷Fe Mössbauer spectroscopy, alternating gradient force magnetometry (AGFM) and Faraday balance. Whereas undoped NiFe₂O₄ adopts a fully inverse spinel structure of the type (Fe)[NiFe]O₄, Sn⁴⁺ and Cu²⁺ cations tend to occupy octahedral positions in the structure of the substituted ferrite. Based on the results of Mössbauer spectroscopic measurements, the crystal-chemical formula of the substituted ferrite may be written as (Fe)[NiFe_1−2xSn_xCu_x]O₄, where parentheses and square brackets enclose cations in tetrahedral (A) and octahedral [B] coordination, respectively. The Néel temperature and the saturation magnetization values of the NiFe_2−2xSn_xCu_xO₄ samples were found to decrease with increasing degree of substitution (x). The variation of the saturation magnetization with x measured using the AGFM method and that calculated on the basis of the Mössbauer spectroscopic measurements are in qualitative agreement.     

Nonlinear properties and stability against DC accelerated aging stress of praseodymium oxide-based ZnO varistors by Er2O3 doping

The microstructure, nonlinear properties, and stability against DC accelerated aging stress of ZnO-Pr₆O₁₁-CoO-based varistors doped with Er₂O₃ was investigated at sintering temperatures of 1300 and 1350 °C. The addition of Er₂O₃ to ZnO-Pr₆O₁₁-CoO-based varistor greatly improved the nonlinear properties and the varistor sintered at 1300 °C exhibited good nonlinearity, with nonlinear exponent of 52.8 and leakage current of 9.8 μA The increase of sintering temperature deteriorated the nonlinear properties, whereas it greatly improved the stability.     

Effect of cation distribution on the properties of Mn0.2ZnxNi0.8−xFe2O4

Mn_0.2Zn_xNi_0.8−xFe₂O₄ (x=0.2, 0.3, 0.4, 0.5, 0.6) are synthesized by the citrate precursor method. Effects of zinc substitution on DC resistivity, dielectric relaxation intensity, initial permeability, saturation magnetization and Curie temperature have been investigated. It is observed that resistivity increases with increase in zinc concentration up to x=0.5 and then decreases. The observed behaviour is explained in terms of hopping and site preference of ions in the lattice. The main contribution to dielectric relaxation intensity is observed to be due to space charge polarization. Initial permeability is observed to increase with increase in zinc concentration. Saturation magnetization increases up to x=0.4 and then starts decreasing. Canting effect is observed for higher zinc concentrations.     

Structural and magnetic phase diagram and room temperature CMR effect of La1−xAgxMnO3

The study of the structural and magnetic phase diagram of the manganites La_1−xAg_xMnO₃ shows similarity with the La_1−x′Sr_x′MnO₃ series, involving a metallic ferromagnetic domain at relatively high temperature (≈300 K). The Ag-system differs from the Sr-one by a much smaller homogeneity range (x≤1/6) and the absence of charge ordering. But the most important feature of the Ag-manganites deals with the exceptionally high magnetoresistance (−25%) at room temperature under 1.2 T, that appears for the composition x=1/6. The latter is interpreted as the coincidence of the optimal double exchange condition (Mn³⁺:Mn⁴⁺=2) with T_max=300 K (maximum of the ρ(T) curve in zero field).     

EPR investigations of oxidation effects in (V1−xMox)2−δO3

Electron paramagnetic resonance (EPR) investigations has been carried out on the new family of molybdenum doped vanadium sesquioxides (V_1−xMo_x)_2−δO₃. The oxidation effects were monitored from the rate of paramagnetic V⁴⁺ created when the sample is exposed to the air. The effects of the oxidation time, sample temperature, and annealing at 1000 °C under a diluted hydrogen atmosphere on the EPR signal features are analyzed. The V⁴⁺ concentration in the oxidized samples is determined and the relaxation effects driven by the conduction electrons are pointed out from the thermal behaviour of the EPR line features. EPR spectra of all the oxidized samples also reveal a small ferromagnetic contribution strongly correlated with the V⁴⁺ content.     

Irreversible effects in LaGa1−xMnxO3

Quasi-irreversible increase in the electrical conductivity is observed in single crystals of LaGa_1−xMn_xO₃. The effect lasts for long time at room temperature and can be erased by heating of the crystal above the phase transition temperature. We explain the observed effects in terms of ionization and local lattice distortion processes.     

Chemical vapor deposition of ZrxTi1−xO2 and HfxTi1−xO2 thin films using the composite anhydrous nitrate precursors

Zr-Ti and Hf-Ti composite nitrates were successfully developed as single-source precursors for the chemical vapor deposition (CVD) of Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ thin films. The Zr-Ti nitrate can be assumed as a solid solution of the individual Zr and Ti nitrates, and the Zr/Ti molar ratio in the deposited Zr_xTi_1−xO₂ films is consistent with that in the precursor. The Hf-Ti nitrate appears to be a mixture of the Hf and Ti nitrates and the composition of the deposited Hf_xTi_1−xO₂ films depends remarkably on the heating time of precursor. Both Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ films exhibit trade-off properties between band gap and dielectric constant. The obtained results suggest that Zr_xTi_1−xO₂ and Hf_xTi_1−xO₂ films are promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the future complementary metal-oxide-semiconductor (CMOS) devices.     

Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films

Highly conducting and transparent thin films of molybdenum-doped indium oxide were deposited on quartz by pulsed laser deposition. The effect of growth temperature and oxygen partial pressure on the structural, optical and electrical properties was studied. We find that the film transparency depends on the growth temperature. The average transmittance of the films grown at different temperatures is in range of 48-87%. The X-ray diffraction results show that the films grown at low temperature are amorphous while the films grown at higher temperature are crystalline. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. Resistivity of the films decreases from 1.3 × 10⁻³ Ω cm to 8.9 × 10⁻⁵ Ω cm while mobility increases from 9 cm²/V s to 138 cm²/V s as the growth temperature increases from room temperature to 700 °C. However, with increase in oxygen pressure, resistivity increases but the mobility decreases after attaining a maximum. The temperature-dependent resistivity measurements show transition form semiconductor to metallic behavior. The film grown at 500 °C under an oxygen pressure of 1.0 × 10⁻³ mbar is found to exhibit high mobility (250 cm²/V s), low resistivity (6.7 × 10⁻⁵ Ω cm), and relatively high transmittance (∼90%).     

Dielectric and optical behaviors in relaxor ferroelectric Pb(In1/2Nb1/2)1−xTixO3 crystal

Dielectric permittivities (ε′,ε″) have been measured as functions of temperature (140-535 K) and frequency (500 Hz-2.0 MHz) in a (001)-cut Pb(In_1/2Nb_1/2)_0.7Ti_0.3O₃ (PINT30%) single crystal grown by the modified Bridgman method with Pb(Mg_1/3Nb_2/3)_0.71Ti_0.29O₃ (PMNT29%) seed crystal. A diffused phase transition was observed in the temperature region of ∼430-460 K with strong frequency dispersion. Above the Burns temperature T_B≅510 K, the dielectric permittivity was found to follow the Curie-Weiss behavior, ε′=C/(T−T_C), with parameters C=3.9×10⁵ and T_C=472 K. Below T_B≅510 K, polar nanoclusters are considered to appear and are responsible for the diffused dielectric anomaly. Optical transmission, refractive indices, and the Cauchy equations were obtained as a function of wavelength at room temperature. The unpoled crystal shows almost no birefringence, indicating that the average structural symmetry is optically isotropic. The crystal exhibits a broad transparency in the wavelength range of ∼0.4-6.0 μm.     

Ionic conductivity of NTE materials c- Zr1−xErxW2O8−x/2

It is found that the c- Zr_1−xEr_xW₂O_8−x/2 solid solutions which are well known to have isotropic NTE properties clearly exhibit oxygen-ionic conductance and their ionic conductivities are measured to be about 10⁻⁴ S cm⁻¹ at 673 K, which is comparable to that of ceria-based solid electrolytes.     

Phonon dynamics of hexagonal Y Mn1−xFexO3

Phonon dynamics was investigated on Y Mn_1−xFe_xO₃(0≤x≤0.20) hexagonal manganite polycrystals. Phonon modes were properly assigned using results obtained on Y MnO₃ single crystal, by mixing the ab plane and the c axis optical responses. Upon increasing the Fe content, most of the phonon mode frequencies do not vary drastically. However, some modes involving Y and O atom displacements along the c axis are affected by doping. Indeed, a redshift of their transverse optical frequency was interpreted as an elongation of Y-O distance along the c-axis, resulting in a change in yttrium coordination.     

Raman spectra of Ba6−3xSm8+2xTi18O54 solid solution

Raman spectra of Ba_6−3xSm_8+2xTi₁₈O₅₄ solid solution were investigated as the function of x and sintering time. Reasonable explanations were provided about the Raman shifts and their intensities at 1013, 590, 751, 280, 232 cm⁻¹. 1013 cm⁻¹ demonstrates the existence of BaCO₃ phase in solid solution, 590 cm⁻¹ is the symmetric stretching mode of the basal oxygens of the octahedral; 280 and 232 cm⁻¹ are the symmetric stretching modes resulted from the tilt of octahedral when large cation sites are Sm³⁺ and Ba²⁺. The shoulder peak appearing around 302 cm⁻¹ is related to the vacancy produced by the unequal valence of Sm³⁺ and Ba²⁺.