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1.
UP, US, and their solid solutions of several compositions were prepared, and the electrical resistivities of these samples were measured from liquid nitrogen temperature to 1000 K and the thermal diffusivities from 300 to 1000 K. It was shown that the resistivity of UP1?xSx at the paramagnetic region arose mainly from the scattering of conduction electrons by disordered spins localized at uranium ion sites. The resistivity of UP0.4S0.6 showed another anomaly below the transition temperature. A gentle hump of the thermal diffusivity of UP was observed at about 650 K. This was concluded to be due to the anomalous negative temperature coefficient of electrical resistivity observed above the Néel temperature up to about 550 K. The composition dependence of thermal conductivity of UP1?xSx was compared with that of UC1?xNx by separating the total conductivity into electronic and phonon contributions.  相似文献   

2.
The long-wavelength optical phonons of the layer GaSe1?xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman spectra of GaSe1?xTex solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal ?-GaSe to monoclinic GaTe in GaSe1?xTex solid solutions takes place in the composition range 0.27 ? × ? 0.72. Only one mode behaviour of the optical phonons was observed in GaSe1?xTex system.  相似文献   

3.
The specific heat C of diluted EuxSr1?xS with Eu concentrations x = 0.95, 0.80, 0.70 and 0.60 was measured within the ferromagnetic regime. Both the temperature dependence of the magnetic part CM and its behavior near the Curie temperature Tc show a variation with concentration which demonstrates clearly a change in magnetic behavior near x = 0.70. Eu0.60Sr0.40S exhibits properties which are more similar to spin glasses in spite of the long-range ferromagnetic order observed in the temperature range of measurement. This transient behavior is found to be consistent with previous observations.  相似文献   

4.
In view of recent controversies on above room-temperature ferromagnetism (RTFM) in transition-metal-doped ZnO, the present paper aims to shed some light on the origin of ferromagnetism by investigating annealing effects on structure and magnetism for polycrystalline Zn1−xMnxO powder samples prepared by solid-state reaction method and annealed in air at different temperatures. Magnetic measurements indicate that the samples are ferromagnetic at room temperature (RTFM). Room temperature ferromagnetism has been observed in the sample annealed at a low temperature of 500 °C with a saturated magnetization (Ms) of 0.159 emu/g and a coercive force of 89 Oe. A reduction in RTFM is clearly observed in the sample annealed at 600 °C. Furthermore, the saturation magnetic moment decreases with an increase in grain size, suggesting that ferromagnetism is due to defects and/or oxygen vacancy confined to the surface of the grains. The experimental results indicate that the ferromagnetism observed in Zn1−xMnxO samples is intrinsic rather than associated with secondary phases.  相似文献   

5.
The studies of magnetic anisotropy of HoCo5-xNix and HoCo5-xCux compounds in the temperature range between 60 and 293 K are presented. The magnetization reorientation from the c-axis to the base plane has been observed. The experimental results are analyzed on the base of the Irchin and Rozenfeld model.  相似文献   

6.
The magnetic susceptibility of Hg1?xMnxS and Hg1?xMnxSe solid solutions with 0.05 ≤x≤0.35 in the temperature range 1.2 KT ≤ 250 K is presented. The θp < 0 has been found. The critical temperature determined from the curve with two slopes is compared with the one obtained from EPR measurements. Two mechanisms of magnetic spin behaviour are considered.  相似文献   

7.
The g-shift and the linewidths in the EPR of gadolinium in GdxY1−xAg have been studied as a function of temperature and concentration. For x > 0.002 a bottleneck in the relaxation of the conduction electrons to the lattice has been observed. The results can be described by Hasegawa's equations; the dynamic effect, predicted in these formulas could not be observed, however.  相似文献   

8.
Thin films of samples of the glassy SxSe100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system SxSe100−x were discussed. The characteristic temperatures (Tg, Tc and Tm) were evaluated. Dark electrical resistivities, ρ, of SxSe100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.  相似文献   

9.
Magnetic measurements have been performed on single crystals of Yni5 and GdNi5 and on polycrystalline samples of GdxY1?xNi5. YNi5 is a Pauli paramagnet, the susceptibility of which is enhanced by exchange and slightly temperature dependent (χ = 23 × 10?4 emu/mole at 4.2 K). In GdNi5, where the anisotropy is very weak, a polarization of the d band opposite to the Gd magnetization is observed. At 4.2 K, this polarization is 0.16 ± 0.02μB/Ni. The decrease of this polarisation with decreasing magnetic interactions has been studied in GdxY1?xNi5-type alloys. It is concluded that the polarization is more homogeneous than that of cobalt observed in GdxY1?xCo2.  相似文献   

10.
The magnetic behaviour of TmxDy1?xFeO3 (x = 0.3; 0.5; 0.7; 1.0) single crystals in the temperature range 90-4.2° K were investigated. The transition from the weak ferromagnetic to antiferromagnetic state was observed at about 9° K for Tm0.3Dy0.7FeO3 single crystal. The reorientation of weak ferromagnetic moment from c- to a-axis was observed for Tm0.7Dy0.3FeO3 single crystal at 35–65° K. The magnetic structure change of iron and rare-earth ions took place when external magnetic field was applied. The thulium and disprosium ion interaction does not essentially influence on the single crystal magnetic properties of the substituted compounds in a low temperature range.  相似文献   

11.
The electronic conductivities of solid solutions La1?xBaxF3?x (0 ? x ? 0.0952) were investigated up to 533 K using the Hebb-Wagner dc polarization technique. The electrochemical cell (-)La|La1?xBaxF3?x|Pt(+) has been utilized with Pt as the ion-blocking electrode. Under steady-state conditions the La1?xBaxF3?x solid solutions exhibit electronic conductivity. The electronic conductivity vanishes in pure LaF3. Together with ac conductivity measurements it appears that the ionic transference number for La1?xBaxF3?x (0 ? x ? 0.0952) is essentially unity over the temperature range studied.  相似文献   

12.
The growth mechanism of Pb1−xFexS nanoparticle films in chemical deposition is discussed. Grain growth for the Pb1−xFexS films with increasing temperature of the chemical bath is observed to be due to the phenomenon of coalescence and formation of bigger particles at higher pH is possibly due to aggregation.  相似文献   

13.
The magnetization versus temperature curves of several compounds of the series LaCo5xNi5?5x were found to give rise to an abrupt increase at temperatures being higher in accordance as the applied field strengths are smaller. The magnetic properties strongly depend on the magnetic as well as on the thermal history. The observed magnetic behaviour is discussed in terms of mictomagnetism and narrow Block wall propagation.  相似文献   

14.
The structural and magnetic studies below room temperature of the alloy system GdInxAg1-x(0?x?1) are reported. It has been found that alloys with x?0.5 crystallize in CsCl type cubic structure, but the distortion of the unit cell starts for alloys with x#62;0.5 and for these alloys the unit cell becomes tetragonal. No phase change is evident from the low temperature (295-8 K) structural studies. However, a break appears in the X-1m vs. T linear plot of each alloy of this system at a specific temperature (designated as break temperature TB). The variation of TB with x is similar to the variation of phase transition temperature with x reported for LaInxAg1-x. Close agreement has been found in the values of effective magneton number (p), magnetic ordering [Néel (TN) or Curie (TC)] and paramagnetic Curie (θp) temperature for materials studied by us and earlier workers. The variation of magnetization with applied field strength (2.5-65)×105 Am-1) at 4.2 K has also been reported for ferromagnetic of this system. It has been concluded that alloys with 0.4?x?0.6 are simple ferromagnets with parallel alignment of magnetic moment in the ground state. The angular arrangement of the magnetic moment starts appearing in the ground state for alloys with x?0.4 for x#62;0.6 and continues till x becomes closure to 0.17 or 0.84. The alloys with x=0.17 or x=0.84 have θp and TC equal to zero and appear paramagnetic. Angular arrangement in spins again appear for alloys with x?0.17 or x#62;0.84, however all materials with 0?x?0.17 or 0.84?x?1 remain antiferromagnetic.  相似文献   

15.
The magnetic and transport properties of nanocrystalline ZnxFe3−xO4 with x=0.0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0, respectively, fabricated by the sol-gel method have been investigated. Large magnetoresistance (MR) was observed and found to be originated both from the tunneling of the spin-polarized electrons across the adjacent ferromagnetic grains and the scattering by the canted spins at the grain surface near the grain boundaries. It has been revealed that the MR for the ZnxFe3−xO4 samples (x=0, 0.5 and 1.0) increases with the temperature decreasing from room temperature until a maximum is reached at around 55 K. Then a sharp drop occurs with the further decrease in temperature, regarded as a spin (cluster) glass transition. For the samples studied, a biggest low field (0.5 T) MR value of about 20% for x=0 at 55 K has been obtained. The mechanism of the MR behavior of the materials was discussed.  相似文献   

16.
Capacitance measurements at various fixed d.c. biases as a function of temperature are presented for junction diodes fabricated from alloys of Pb1?xGex with x=0.03, x=0.45 and x=0.06. Strong capacitance maxima at the temperatures associated with a cubic-rhombohedral phase transition are observed. These peaks are the first reported direct evidence for the ferroelectric nature of the crystalline phase transition in the PbTe based alloys.  相似文献   

17.
We report EPR and magnetic susceptability measurements in single crystals of Cd1?xMnxSe as a function of concentration and temperature. The data indicate that there is a critical concentration x≈0.22 which we identify with the percolation critical point xc.  相似文献   

18.
The EPR and magnetic properties were investigated on vapour phase grown Zn1−xCrxTe (0.001?x?0.005) crystal samples at room temperature. The EPR spectra were observed for samples with x=0.001, 0.002 only. The simulations of the spectra confirm Cr3+ charge state of the dopant ion at tetrahedral symmetry. The magnetic behaviour of the samples with x=0.001 and 0.002 is neither that of Brillouin paramagnets nor Van Vleck systems while the samples with compositions x=0.003, 0.004 and 0.005 exhibited hysteresis behaviour.  相似文献   

19.
Long time effects in the spin glass Cd1-xMnxTe are investigated by measurements of the low field Faraday rotation effect. Strongly marked fluctuations are observed in the time dependence of the Faraday angle below the critical temperature. That seems to be a new effect in spin glasses.  相似文献   

20.
The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga1−xInxSb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga1−xInxSb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga1−xInxSb vapour composition and solid composition has been studied at a V/III ratio of 0.78.  相似文献   

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