Magnetic phases in lanthanum-strontium manganite-cobaltite La1.25Sr0.75MnCoO6

Two methods—the solid-phase high-temperature (1300 °C) and the liquid-phase low-temperature (750 °C) routes—were used to synthesize the complex oxide La_1.25Sr_0.75MnCoO₆, which has the structure of rhombohedral perovskite and is characterized by a disordered distribution of Mn and Co in structural sites. It was found by means of X-ray absorption near edge spectroscopy (XANES) at the K-edge that mixed valence states of Co²⁺/Co³⁺ and Mn³⁺/Mn⁴⁺, exist in both phases. Measurements of dc magnetization and real (χ′) and imaginary (χ″) parts of the ac susceptibility showed that the magnetic properties of these oxides are determined by a ferromagnetic transition at T_C=217 K and a frequency-dependent transition at T_g<100 K. The high frequency dependence of T_g is indicative of the cluster-glass behavior of La_1.25Sr_0.75MnCoO₆ (7 5 0) at T<T_C within the ferromagnetic state.     

On the high-resistivity contacts to YBa2Cu3O7 thin films, electrical behavior in the regime of high temperatures and high-bias voltages

We prepared in-situ Au contacts on high-quality epitaxial YBa₂Cu₃O₇ (YBCO) films. Very high specific contact resistivity values up to ∼10⁻² Ω cm² at 4.2 K were obtained on 12×5 μm² contact areas. This resistivity value decreased by two orders of magnitude as the temperature was raised to room temperature. In the temperature range T<200 K, the contacts showed non-ohmic behavior suggesting the presence of a well-defined insulating native Y-Ba-Cu-O barrier between the two electrodes. The electrical transport in this barrier layer was analyzed in the limit of high temperatures and high voltages to follow Mott's variable-range hopping conduction mechanism with physically reasonable parameters describing the localized states in the barrier. The high-resistivity contacts were tested successfully in quasiparticles injection experiments where the critical current I_c of the YBCO microbridge could be strongly suppressed on injection of an additional current through the contact into the superconducting channel.     

Electrical studies on bulk Se96Sn4 semiconducting glass before and after gamma irradiation

Bulk Se₉₆Sn₄ chalcogenide glass was prepared by melt quenching technique and irradiated by different doses of 4, 8, 12, 24 and 33 kGy using ⁶⁰Co gamma emitter. I-V characteristics were obtained for this glass, before and after gamma irradiation, in the temperature range 200-300 K. Ohmic behavior was observed at low electric fields (≤1×10⁴ V/m), while at higher fields, a deviation from ohmic towards non-ohmic behavior was observed. The plots of ln(I/V) vs. V were found to be straight lines and the slopes of these lines decrease linearly with temperature indicating the presence of SCLC. In the temperature range of measurements, the dependence of DC conductivity on temperature at low electric field shows two types of conduction channels, one in high temperature range 270-300 K and the other at low temperature range 200-270 K. Analysis of the experimental data shows that the conductivity at room temperature decreases with increase in irradiation dose. This is attributed to rupturing of SnSe_4/2 structural units, upon irradiation, and rebuilt of Se atoms between Se chains. This redistribution of bonds, induced by gamma irradiation, is responsible for the corresponding increase in the activation energy. The obtained values of the activation energy indicate that the conduction occurs due to thermally assisted charge carriers movement in the band tail of localized states. However, in the low temperature range, results obtained from Mott’s variable range hopping (VRH) model reveal that the density of localized states has its maximum value at a gamma dose of 12 kGy, while the disorder parameter T_o, hopping distance R_hop and hopping energy W have their minimum value at this particular dose.     

Preference orientation and magnetic properties of CoxFe3−xO4 nanocrystalline thin films on quartz substrate

Nanocrystalline spinel ferrite thin films of Co_xFe_3−xO₄ (x=0.3$x=0.3$, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm³, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.     

Magnetic,electrical transport and electron spin resonance studies of Fe-doped manganite LaMn0.7Fe0.3O3+δ

We have investigated the magnetic, electrical transport and electron spin resonance (ESR) properties of polycrystalline Fe-doped manganite LaMn_0.7Fe_0.3O_3+δ prepared by sol–gel method. A typical cluster-glass feature is presented by DC magnetization and AC susceptibility measurements and a sharp but shallow memory effect was observed. Symmetrical Lorentzian lines of the Mn/Fe spectra were detected above 120 K, where the sample is a paramagnetic (PM) insulator. When the temperature decreases from 120 K, magnetic clusters contributed from ferromagnetic (FM) interaction between Mn³⁺ and Mn³⁺/Fe³⁺ ions develop and coexist with PM phase. At lower temperature, these FM clusters compete with antiferromagnetic (AFM) ones between Fe³⁺ ions, which are associated with a distinct field-cooled (FC) effect in characteristic of cluster-glass state.     

Synthesis and magnetic properties of Au-coated amorphous Fe20Ni80 nanoparticles

Gold-coated nanoparticles of Fe₂₀Ni₈₀ (permalloy) have been synthesized by a microemulsion process. The as-prepared samples consist of ∼5 nm diameter particles of amorphous Fe₂₀Ni₈₀ that are likely encapsulated in B₂O₃. One or more Fe₂₀Ni₈₀@B₂O₃ particles are subsequently encapsulated in 8-20 nm gold nanospheres, as determined by TEM and X-ray powder diffraction (XRD) line broadening. The gold shells were found to be under expansive strain. Magnetic data confirm the existence of a superparamagnetic phase with a blocking temperature, T_B, of ∼33 K. The saturation magnetization, M_S, of the as-prepared, Au-coated sample is ∼65 emu g⁻¹ at 5 K and ∼16 emu g⁻¹ at 300 K. The coercivity, H_C, is ∼280 Oe at 5 K.     

Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe_3−xZn_xO₄ (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe₃O₄ thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn²⁺ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe₃O₄ on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T_2g¹, T_2g³, T_2g², and A_1g at 193, 304, 531 and 668 cm⁻¹. It is noticed that the frequency positions of the strongest A_1g mode are at 668.3 cm⁻¹, for all parent Fe₃O₄ thin film shifted at lower wave number as 663.7 for Fe_2.98Zn_0.02O₄ thin film on Si (1 1 1) substrate. The integral intensity at 668 cm⁻¹ increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.     

Magnetic and magneto-transport investigations of Co37Ni34Al29 alloy

Ferromagnetic shape memory alloy with nominal composition Co₃₇Ni₃₄Al₂₉ is investigated by transport and magnetic measurements. The anomaly due to the martensitic transition is observed around 130-210 K. The thermal hysteresis, observed due to martensitic transition in the dc magnetization versus temperature data, gets suppressed at higher applied field. Below 50 K, magnetization varies with temperature perfectly as T^3/2, which signifies that spin wave excitations are largely responsible for thermal demagnetization. The sample shows small negative magneto-resistance, which varies non-monotonically with temperature showing largest value at around 200 K.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Magnetic properties and EPR spectra of [Cu(L-arginine)2](NO3)2·3H2O

Magnetic and EPR data have been collected for complex [Cu(L-Arg)₂](NO₃)₂·3H₂O (Arg=arginine). Magnetic susceptibility χ in the temperature range 2-160 K, and a magnetization isotherm at T=2.29(1) K with magnetic fields between 0 and 9 T were measured. The observed variation of χT with T indicates predominant antiferromagnetic interactions between Cu(II) ions coupled in 1D chains along the b axis. Fitting a molecular field model to the susceptibility data allows to evaluate g=2.10(1) for the average g-factor and J=−0.42(6) cm⁻¹ for the nearest neighbor exchange coupling (defined as H_ex=-∑J_ijS_i·S_j). This coupling is assigned to syn-anti equatorial-apical carboxylate bridges connecting Cu(II) ion neighbors at 5.682 Å, with a total bond length of 6.989 Å and is consistent with the magnetization isotherm results. It is discussed and compared with couplings observed in other compounds with similar exchange bridges. EPR spectra at 9.77 were obtained in powder samples and at 9.77 and at 34.1 GHz in the three orthogonal planes of single crystals. At both microwave frequencies, and for all magnetic field orientations a single signal arising from the collapse due to exchange interaction of resonances corresponding to two rotated Cu(II) sites is observed. From the EPR results the molecular g-tensors corresponding to the two copper sites in the unit cell were evaluated, allowing an estimated lower limit |J |>0.1 cm⁻¹ for the exchange interaction between Cu(II) neighbors, consistent with the magnetic measurements. The observed angular variation of the line width is attributed to dipolar coupling between Cu(II) ions in the lattice.     

Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite

A detailed study of the low-temperature magnetic state and the relaxation in the phase-separated colossal magnetoresistance Nd_2/3Ca_1/3MnO₃ perovskite has been carried out. Clear experimental evidence of the cluster-glass magnetic behavior of this compound has been revealed. Well defined maxima in the in-phase linear ac susceptibility χ′(T) were observed, indicative of the magnetic glass transition at T_g∼60 K. Strongly divergent zero-field-cooled and field-cooled static magnetizations and frequency dependent ac susceptibility are evident of the glassy-like magnetic state of the compound at low temperatures. The frequency dependence of the cusp temperature T_max of the χ′(T) susceptibility was found to follow the critical slowing down mechanism. The Cole–Cole analysis of the dynamic susceptibility at low temperature has shown extremely broad distribution of relaxation times, indicating that spins are frozen at “macroscopic” time scale. Slow relaxation in the zero-field-cooled magnetization has been experimentally revealed. The obtained results do not agree with a canonical spin-glass state and indicate a cluster glass magnetic state of the compound below T_g, associated with its antiferromagnetic–ferromagnetic nano-phase segregated state. It was found that the relaxation mechanisms below the cluster glass freezing temperature T_g and above it are strongly different. Magnetic field up to about μ₀H∼0.4 T suppresses the glassy magnetic state of the compound.     

Studies on fabrication of Ag/Tl2Ba2Ca2Cu3O10/CdSe heterostructures with electrochemical technique

The Ag/Tl₂Ba₂Ca₂Cu₃O₁₀/CdSe heterostructure was fabricated at room temperature by soft electrochemical processing technique for the first time. The formation of the heterostructure with non-diffusive interfaces was confirmed by X-ray diffraction. The crystallite sizes determined for Tl-2223 and CdSe films were 33 nm and 25 nm, respectively. The Tl₂Ba₂Ca₂Cu₃O₁₀ film electrodeposited onto Ag-substrate has shown the superconducting transition temperature T_c at 116.5 K and J_c = 2.1 × 10³ A/cm². These values were found to improve after the deposition of CdSe onto Ag/Tl-2223 films. The effect of red He-Ne laser irradiation on the superconducting properties of heterostructure are studied and discussed at length in this paper.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Influence of B2O3 to the inhomogeneous broadening and spectroscopic properties of Er/Yb codoped fluorophosphate glasses

In a three-components fluorophosphate glass system, the introduction of H₃BO₃ brings some valuable influence to the spectroscopic and thermal properties of the glasses. With H₃BO₃ increases from 2 to 20 mol%, Ω₆, S_ed4I13/2, FWHM, T_g and fluorescence lifetime change from 3.21×10⁻²⁰ cm², 1.77×10⁻²⁰ cm², 45 nm, 480 °C and 8.8 ms to 4.66×10⁻²⁰ cm², 2.11×10⁻²⁰ cm², 50 nm, 541 °C and 7.4 ms, respectively. σ_abs, σ_emi, FWHM×τ_f×σ_emi has a maximum when H₃BO₃ is 11 mol%. T_g and T_x−T_g increases with H₃BO₃ introduction. Results showed that in fluorophosphate glasses, proper amount of B₂O₃ can be used as a modifier to suppress upconversion and improve spectroscopic properties, broadband property and crystallization stability of the glasses while keeps the fluorescence lifetime relatively high.     

Spin-glass-like behaviour and magnetic order in Mn[Cr0.5Ga1.5]S4 spinels

Magnetization and susceptibility were investigated as a function of temperature and magnetic field in polycrystalline Mn[Cr_0.5Ga_1.5]S₄ spinel. The dc susceptibility measurements at 919 Oe showed a disordered ferrimagnetic behaviour with a Curie-Weiss temperature θ_CW=−55 K and an effective magnetic moment of 5.96 μ_B close to the spin-only value of 6.52 μ_B for Cr³⁺ and Mn²⁺ ions in the 3d³ and 3d⁵ configurations, respectively. The magnetization measured at 100 Oe revealed the multiple magnetic transitions with a sharp maximum at the Néel temperature T_N=3.9 K, a minimum at the Yafet-Kittel temperature T_YK=5 K, a broad maximum at the freezing temperature T_f=7.9 K, and an inflection point at the Curie temperature T_C=48 K indicating a transition to paramagnetic phase. A large splitting between the zero-field-cooled (ZFC) and field-cooled (FC) magnetizations at a temperature smaller than T_C suggests the presence of spin-glass-like behaviour. This behaviour is considered in a framework of competing interactions between the antiferromagnetic ordering of the A(Mn) sublattice and the ferromagnetic ordering of the B(Cr) sublattice.     

Effect of substrate temperature on structure and electrical resistivity of laser-ablated IrO2 thin films

IrO₂ thin films were prepared on Si(1 0 0) substrates by laser ablation. The effect of substrate temperature (T_sub) on the structure (crystal orientation and surface morphology) and property (electrical resistivity) of the laser-ablated IrO₂ thin films was investigated. Well crystallized and single-phase IrO₂ thin films were obtained at T_sub = 573-773 K in an oxygen partial pressure of 20 Pa. The preferred orientation of the laser-ablated IrO₂ thin films changed from (2 0 0) to (1 1 0) and (1 0 1) depending on T_sub. With the increasing of T_sub, both the surface roughness and crystallite size increased. The room-temperature electrical resistivity of IrO₂ thin films decreased with increasing T_sub, showing a low value of (42 ± 6) × 10⁻⁸ Ω m at T_sub = 773 K.     

Magnetization reversal in Gd0.67Ca0.33MnO3: Comparison between epitaxial thin films and bulk

Rare-earth-based manganites ABO₃ may present interesting properties when the lanthanide (A-site) and/or the manganese (B-site) are partially substituted by divalent elements. Heavy lanthanides are particularly appealing because of the expected interplay between the intrinsic magnetic properties of the rare-earth element (Ln) and those of the ferromagnetic manganese sublattice. As such, a spin reorientation has been observed during magnetization-versus-temperature cycles due to a negative exchange interaction between Mn and Ln. We present herein high-quality epitaxial thin films (∼200 nm thick) of Gd_0.67Ca_0.33MnO₃ deposited onto (1 0 0) SrTiO₃ substrates by pulsed-laser deposition. Enhanced properties were observed in comparison with bulk samples. The magnetic transition temperature T_c of the as-grown films is much higher than the corresponding bulk values. Most interesting, magnetization measurements performed under small applied fields, exhibit magnetization reversals below T_c, no matter whether the film is field-cooled (FC) or zero-field-cooled (ZFC). The reversal mechanism is discussed in terms of a negative exchange f-d interaction and magnetic anisotropy, this latter enhanced by strain effects induced by the lattice mismatch between the film and the substrate.     

Effect of deposition conditions on YBa2Cu3O7−δ thin films by inverted cylindrical magnetron sputtering and substrate effects

The dependence of YBCO thin film properties on the deposition conditions was studied for different substrates. The deposition conditions were optimized for the epitaxial growth of high quality YBCO thin films of 1500 Å thickness onto single crystal (100-oriented) SrTiO₃ (STO), MgO and LaAlO₃ (LAO) substrates by DC Inverted Cylindrical Magnetron Sputtering (ICMS). The samples were investigated in detail by means of X-ray diffraction analysis (XRD), EDX, AFM, ρ-T, magnetic susceptibility and current-voltage (I-V) characterizations. The samples show strong diamagnetic behavior and sharp transition temperatures of 89-91 K with ΔT<0.5 K. XRD of the samples exhibited highly c-axis orientation. The full width at half maximum (FWHM) values of the rocking curves were ranging typically from 0.22 to 0.28°. The samples have smooth surfaces as shown from AFM micrographs. The surface roughness, R_a, changed between 5-7 nm. I-V characteristics were obtained from the 20 μm-wide microbridges, which were patterned by a laser writing technique. The critical current densities (J_c, 1.06×10⁶ for LAO-based YBCO, 1.39×10⁶ for MgO-based YBCO, 1.67×10⁶ A/cm² for STO based YBCO) of the microbridges were evaluated from I-V curves at 77 K.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

Fabrication and characterization of magnetic Fe3O4-CNT composites

Carbon nanotubes (CNTs) decorated with magnetite nanoparticles on their external surface have been fabricated by in situ solvothermal method, which was conducted in benzene at 500 °C with ferrocene and CNTs as starting reagents. The as-prepared composites were characterized using XRD, FTIR, SEM and TEM. It has been found that the amount of magnetite nanoparticles deposited on the CNTs can be controlled by adjusting the initial mass ratio of ferrocene to CNTs. The Fe₃O₄-CNT composites display good ferromagnetic property at room temperature, with a saturation magnetization value (M_s) of 32.5 emu g⁻¹ and a coercivity (H_c) of 110 Oe.