Direct observation of a bulklike spin moment at the Fe/GaAs(100)-4x6 interface

We have used x-ray magnetic circular dichroism, which offers a unique capability to give element specific information at submonolayer sensitivity, to determine the spin and orbital magnetic moments at the Fe/GaAs(100) interface. The wedge samples, grown by molecular beam epitaxy at room temperature, consisted of 0.25-1 monolayer (ML) Fe on GaAs(100)-4x6 capped with 9 ML Co and have shown Fe spin moments of (1.84-1.96)micro(B) and a large orbital enhancement. Our results demonstrate unambiguously that the Fe/GaAs(100)-4x6 interface is ferromagnetic with a bulklike spin moment, which is highly promising for spintronics applications.     

Ultrathin Fe films on single crystal and virtual Ge(0 0 1) substrates: Towards the control of magnetic properties

Ultrathin Fe films have been epitaxially grown at room temperature on standard single crystal Ge(0 0 1) substrates and virtual Ge/Si(0 0 1) substrates. Their magnetic and electronic properties have been investigated in situ by spin polarized inverse photoemission and magneto-optical Kerr effect. In both cases, the onset of ferromagnetism appears definitively at 3 ML, and the overall behavior is very similar in the case of standard and virtual substrates, so that the latter can be employed for growing high quality Fe/Ge/Si interfaces. All the films investigated display uniaxial anisotropy, which is explained in terms of the surface morphology induced by the preparation conditions.     

In situ magneto-optical Kerr effect study of uncovered Fe films on ZnSe(0 0 1)

The magnetic properties of uncovered Fe/ZnSe/GaAs(1 0 0) ultrathin films have been determined in situ by magneto-optical Kerr effect (MOKE). Fe films up to 10 monolayers (ML) thick were deposited on c(2×2) Zn-rich ZnSe/GaAs(0 0 1) surfaces at 180 °C. We have studied the thickness dependence of the in-plane lattice parameter of the Fe films and of the MOKE hysteresis loops in the longitudinal geometry, at 150 K, under magnetic fields up to 0.1 T applied along the [1 1 0] and [1-1 0] directions of the ZnSe(0 0 1). Reflection high energy electron diffraction show that in the low thickness regime the Fe films present an in-plane structural anisotropy characterized by an expansion along the [1 1 0] direction. Hysteretic loops were obtained only starting from ∼5 ML Fe. We found the onset of an uniaxial magnetic anisotropy with [1 1 0] magnetic easy axis at 7 ML Fe.     

Complex band structure and tunneling through ferromagnet /Insulator /Ferromagnet junctions

We investigate the importance of metal-induced gap states for the tunneling of metal electrons through epitaxial insulator films. By introducing an imaginary part kappa to the wave vector in order to describe the decay of the wave function in the insulator, we obtain the complex band structure in the gap region. The spectrum of the decay parameters kappa is calculated for the semiconductors Si, Ge, GaAs, and ZnSe. In most cases, for large enough film thicknesses the tunneling is dominated by states of normal incidence on the interface. Possible exceptions are considered. Based on our conclusions, we discuss the spin-dependent tunneling in Fe/semiconductor/Fe (001) junctions.     

Correlation between ferromagnetic state and thermally stable layer of Fe on the W(001) surface

The variations of electronic and magnetic properties of ultrathin Fe overlayers on a W(001) surface as a function of Fe film thickness (1.0–4.0 ML) has been investigated using X-ray magnetic circular dichroism (XMCD) in conjunction with ultraviolet photoelectron spectroscopy (UPS) and low energy electron diffraction (LEED). We found that the ferromagnetic property of Fe film started to build up over 2.0 ML, as we confirmed the spin and angular moment contribution to the magnetic moment using XMCD experiments. We also confirmed that a thermally stable layer is over 2.0 ML of Fe film as we change the annealing temperature taken after Fe deposition at 300 K and at 400 K using UPS. We will systematically demonstrate that the occurrence of ferromagnetic property of Fe film on a W(001) surface is closely correlated to a thermally stable layer of Fe film on a W(001) surface.     

Perpendicular magnetic anisotropy of ultrathin FeCo alloy films on Pd(0 0 1) surface: First principles study

Using the full potential linearized augmented plane wave (FLAPW) method, thickness dependent magnetic anisotropy of ultrathin FeCo alloy films in the range of 1 monolayer (ML) to 5 ML coverage on Pd(0 0 1) surface has been explored. We have found that the FeCo alloy films have close to half metallic state and well-known surface enhancement in thin film magnetism is observed in Fe atom, whereas the Co has rather stable magnetic moment. However, the largest magnetic moment in Fe and Co is found at 1 ML thickness. Interestingly, it has been observed that the interface magnetic moments of Fe and Co are almost the same as those of surface elements. The similar trend exists in orbital magnetic moment. This indicates that the strong hybridization between interface FeCo alloy and Pd gives rise to the large magnetic moment. Theoretically calculated magnetic anisotropy shows that the 1 ML FeCo alloy has in-plane magnetization, but the spin reorientation transition (SRT) from in-plane to perpendicular magnetization is observed above 2 ML thickness with huge magnetic anisotropy energy. The maximum magnetic anisotropy energy for perpendicular magnetization is as large as 0.3 meV/atom at 3 ML film thickness with saturation magnetization of . Besides, the calculated X-ray magnetic circular dichroism (XMCD) has been presented.     

Si/Gen/Si(001)异质结薄膜的掠入射荧光X射线吸收精细结构研究

利用掠入射荧光X射线吸收精细结构(XAFS)方法研究了在400℃的温度下分子束外延生长的Si/Ge_n/Si(001)异质结薄膜(n=1，2，4和8个原子层)中Ge原子的局域环境结构.结果表明，在1至2个Ge原子层(ML)生长厚度的异质结薄膜中，Ge原子的第一近邻配位主要是Si原子.随着Ge原子层厚度增加到4ML，Ge原子的最近邻配位壳层中的Ge-Ge配位的平均配位数增加到1.3.当Ge原子层厚度增加到8ML时，第一配位壳层中的Ge-Ge配位占的比例只有55%.这表明在400℃的生长条件下，Ge原子有很强的迁移到Si覆盖层的能力.随着Ge层厚度从1 增加到2，4和8ML，Ge原子迁移到Si覆盖层的量由0.5ML分别增加到1.5，2.0和3.0ML.认为在覆盖Si过程中Ge原子的迁移主要是通过产生Ge原子表面偏析来降低表面能和Ge层的应变能. 关键词： XAFS n/Si(001)异质膜')" href="#">Si/Ge_n/Si(001)异质膜 迁移效应     

Spin wave excitations in Fe films grown on GaAs(1 1 3)A substrates

The spin wave excitation and its size effect has been studied in Al-capped Fe films grown on low-symmetry GaAs(1 1 3)A substrates. The temperature dependence of saturation magnetization follows an effective Bloch's law as long as magnetization remains larger than about 70% of its saturation value. A significant increase of the spin wave parameter B is found in Al-capped ultrathin Fe films grown on GaAs(1 1 3)A compared to bulk Fe, Fe films on GaAs(0 0 1) and other systems. This is explained as a result of the reduction in uniaxial magnetic anisotropy observed in this orientation for the same thickness range. However, this observed uniaxial magnetic anisotropy is found to be a likely reason for stabilizing the ferromagnetism.     

LEED and AES studies of the initial growth of Ge epilayers on GaAs(100)

The initial stages of growth of epitaxial Ge overlayers on the GaAs(100) surface have been studied by LEED and AES on overlayers from 0.1 monolayers (ML) to 10 ML in thickness. It is found that a coverage of about 0.2 ML converts the initial clean surface reconstruction into a single domain (1 × 2) reconstruction with a surface atomic geometry very similar to that of clean Ge. Further growth does not significantly change the arrangement of atoms at the surface. Growth from 1 to 4 ML proceeds by a double layer growth mechanism which maintains the single (1 × 2) domain. Auger measurements indicate that the growing surface has a $\text{1}\text{2}$ ML As enrichment, and that the interface is not abrupt, but has a mixed GeGa or GeAs transition layer.     

AFM morphological characterization and Raman study of germanium grown on (111)GaAs

In this communication we report on the growth of Ge heterolayers on (100), (111)Ga and (111)As surfaces of GaAs substrates. Arsenic can play a role as both dopant and surfactant, changing the growth mechanism for the Ge/GaAs growth on (001) oriented substrates. The use of substrates oriented in different directions can change the growth mode and produce different results, since surface polarity can induce different growth modes: we have compared the results on (111) substrates with respect to the non-polar surface case.The growth behavior on (001), (111)Ga and (111)As substrates is discussed. The layer morphology was investigated by Atomic Force Microscopy and Raman spectroscopy has been carried out as a function of the sample thickness.     

Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.     

Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy

The effect of the surface preparation of the GaAs(110) substrate on the ZnSe epitaxial layer grown by molecular beam epitaxy (MBE) was investigated by means of etch-pit density (EPD) measurements, surface morphology observation, and reflection high-energy electron diffraction (RHEED) analysis. The ZnSe epitaxial layer grown on a GaAs(110) surface prepared by cleaving the (001)-oriented wafer in ultrahigh vacuum (UHV) showed about 5×10⁴ cm^-2 of EPD. This value is much lower than that observed from both the samples grown on the mechanically polished surface with and without a GaAs buffer layer. Due to the non-stoichiometric surface after thermal evaporation of the surface oxide, three-dimensional growth can easily occur on the mechanically polished GaAs(110) substrate. These results suggest that the stoichiometric and atomically flat substrate surface is essential for the growth of low-defect ZnSe epitaxial layers on the GaAs(110) non-polar surface. Received: 21 August 1998 / Accepted: 19 October 1998 / Published online: 28 April 1999     

Perpendicular magnetization in Fe/Ni bilayers on GaAs(0 0 1)

Following the concept of spin-injection into a semiconductor-based device, a ferromagnetic element (like a GMR multilayer structure) can be used as a spin filter. A high spin-polarization of the electrons can be realized by the preparation of a monocrystalline multilayer structure consisting of ultrathin films of a high magnetic polarization. In the case of ultrathin films, the manipulation of the easy-axis of magnetization is possible, by changing the anisotropy terms contributing to the effective anisotropy of the structure. We report on the structural and magnetic properties of Ni/Fe and Fe/Ni bilayers epitaxially grown on GaAs(0 0 1). By a proper choice of Fe and Ni sequences (Fe/Ni/GaAs) and their thickness (up to 3 ML of Fe on the top of Ni), the rotation of magnetization from the in-plane to the out-of-plane direction was achieved.     

大功率CO2激光器窗口及减反射膜

描述了评价窗口材料的标准,并对Ge,GaAs,ZnSe和KCl四种材料作了比较,发现KCl具有最佳的光学特性,并设计制备了性能优良的减反射膜,测量了它们的吸收和激光损伤阈值.     

Magnetic properties of thin epitaxial films investigated by spin-polarized photoemission

The surface sensitivity of the spin-polarized photoemission experiment was exploited to study two-dimensional magnetism. The magnetization of thin films of Fe, Co, and V in the monolayer (ML) range, grown on Cu(001) and Ag(001) single crystals, was measured as a function of perpendicularly applied field and temperature. Bcc Fe films and fcc Fe and Co films exhibit ferromagnetism down to the single monolayer range, while no evidence for ferromagnetism is found for V on Ag(001). All Co films are magnetized in plane and have a Curie temperature far above room temperature. A thickness dependence of the anisotropy and Curie temperature is observed for the two phases of Fe. Remanent magnetization perpendicular to the surface is found at 30 K for fcc Fe films thicker than 2 ML and for bcc Fe between 3 and 4 ML. The magnetic effects caused by coating and by interdiffusion are discussed in the light of measurements of Cu/Fe/Cu sandwiches and of overlayers obtained by simultaneous evaporation of Fe and Cu. The fcc Fe films are shown to be suitable for thermomagnetic writing.     

Magnetism of the Fe/ZnSe(001) interface

The magnetism of epitaxial ultrathin films of Fe on ZnSe(001) has been investigated by x-ray magnetic circular dichroism down to the submonolayer regime. In contrast to other metallic ferromagnet/semiconductor interfaces, no reduction of the Fe magnetic moment was found at the Fe/ZnSe(001) interface. Furthermore, a significant enhancement of the Fe magnetic moment compared to the bulk value was observed for coverages up to one monolayer in agreement with theoretical predictions. We also demonstrate that the magnetic properties of the Fe/ZnSe(001) interface remain stable against thermal annealing up to 300 degrees C, a prerequisite for the future development of efficient spintronics devices.     

Current-in-plane giant magnetoresistance: The effect of interface roughness and spin-depolarization due to the proximity of a buffer layer

We report on proximity effects of a Au buffer layer on the current-in-plane giant magnetoresistance effect (CIP-GMR) in high-quality, epitaxial Fe/Cr/Fe(001) trilayers. The lower Fe layer is grown in the shape of a wedge and allows simultaneous preparation of 24 GMR stripe-elements with different lower Fe thicknesses in the range from 13 to 14.5 ML. The layer-by-layer growth mode in combination with the small thickness variation gives rise to: (i) well-controlled roughness changes from stripe to stripe as confirmed by reflection high-energy electron diffraction (RHEED), and (ii) to a varying influence of the underlying Au buffer. The oscillatory roughness variation along the wedge yields an oscillatory GMR behavior as a function of Fe thickness and confirms the previous result that slightly increased interface roughness causes a higher GMR ratio. The proximity of the Au buffer to the GMR trilayer results in an increase of the GMR ratio with increasing Fe thickness. The latter effect is explained by spin-depolarization at the Fe/Au interface and in the bulk of the Au buffer.     

Intrinsic stress of ultrathin epitaxial films

The present article focuses on the stress developing during the deposition of ultrathin epitaxial films in the thickness range of a few atomic layers. The studied systems exhibit the three well-known modes of film growth: Stranski–Krastanow mode [Ge/Si(001), Ge/Si(111), Ag/Si(111)], Frank–Van der Merwe mode [Fe/MgO(001)] and Volmer–Weber mode [Ag/mica(001), Cu/mica(001)]. The experimental results demonstrate the important role of the misfit strain as well as the contribution of surface stress effects as mechanisms for the stress in single atomic layers. Received: 26 April 1999 / Accepted: 25 June 1999 / Published online: 6 October 1999     

Structural and magnetic properties of ultrathin epitaxial Fe films on GaAs(001) and related semiconductor substrates

This article presents a review of the structural and magnetic properties of ultrathin epitaxial Fe films on GaAs(001) and related semiconductor substrates. Interest in these systems and Fe/GaAs(001) in particular has increased significantly over the last two decades, largely due to the emergence of the field of magnetoelectronics. Since then numerous studies of molecular beam epitaxy of Fe on GaAs(001) have been carried out, making it by far the best researched Fe/semiconductor(001) system. Issues such as magnetic anisotropy in the ultrathin regime, however, remain controversial with contradictory reports in the literature giving rise to considerable controversy within the field. By carefully scrutinizing the enormous amount of literature published on Fe/GaAs(001) so far and analysing these results within the wider context of Fe/semiconductor(001) systems, this article tries to settle some of these controversial issues, hence providing a long overdue ‘common denominator' for research in this area.     

Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.