Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory. The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure. In N anion-doped Cu2O, some N 2p states overlap and mix with the O 2p valence band, leading to a slight narrowing of band gap compared with the undoped Cu2O. However, it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

Theoretical study of TiO2 surfaces

A tight-binding extended Hückel (TBEH) calculation has been performed to investigate the electronic structures of TiO₂ surfaces. By analysing the density of states (DOS) of various surfaces and the orbital interactions between surface atoms, it is found that the continuous drop of the uppermost valence band peak with increasing surface defects is due to the removal of surface bridge O atoms, and that the interaction of the two Ti atoms adjacent to the O vacancy induces a defect gap state.     

Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films

The effect of nitrogen (N) incorporation into HfSiO on the electronic structure and band alignment of HfSiO films was investigated. N depth profile data obtained by medium energy ion scattering (MEIS) showed that the concentration of N or the bonding or electronic state of N in the film was stable when the film was annealed at 950 °C, while the oxygen (O) in HfSiON films was present in dissociated form, as evidenced by the unoccupied electronic state of O. The valence band offsets of the HfSiO films were strongly affected by N incorporation due to the presence of N in a 2p state. Moreover, a reduction in the conduction band offset of a HfSiO film was confirmed after the film was annealed in an atmosphere of N₂. The unoccupied state of the O vacancy is responsible for the change in the conduction band offset. The results of ab-initio calculations for the density of states (DOS) of HfSiO and HfSiON supercells were in agreement with the experimental results. The incorporation on N into HfSiO prevents the formation of a gap-state inside the band gap despite the fact that an O vacancy is generated in the film.     

First-principles study on magnetism and electronic structure of V-doped rutile TiO2

We have investigated the magnetism and the electronic structure of V-doped rutile TiO₂ using the first-principles full potential linearized augmented plane-wave (FP-LAPW) method. Total energy calculations reveal that V-doped rutile TiO₂ has a stable ferromagnetic ground state. Meanwhile, the electronic structure analysis indicates that V-doped rutile TiO₂ is a half-metal within the local density approximation (LDA) while a semiconductor within the LDA + U (Hubbard coefficient). The calculated magnetic moment in V-doped rutile TiO₂ mainly arises from the V atom with a little contribution from the nearest-neighboring O atoms due to the hybridization between the V 3d states and the nearest-neighboring O 2p states.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

First principles study on the electronic structure of the two chain compounds of [ M(N3)2(HCOO)][(CH3)2NH2] (M=Fe and Co)

First principles calculations have been performed to study the electronic structure and the ferromagnetic properties on the two chain compounds of [M(N₃)₂(HCOO)][(CH₃)₂NH₂] (M=Fe and Co). The relative stability of the ground state, the density of states and the electronic band structure are examined. The results reveal that antiferromagnetism (AFM) state is the ground state and ferromagnetism (FM) state is the metastable one for both of them. The two compounds exhibit semiconductor character with small gap in the FM state, while metallic in the AFM state. In the FM state, the magnetic moments mainly arise from the Fe and Co ions with little contribution from the nearest-neighboring N and O atoms due to the hybridization between the Fe or Co 3d states and the nearest-neighboring N and O 2p states.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

Electronic properties of anatase TiO2 doped by lanthanides: A DFT+U study

The effects of mono-doping of 4f lanthanides with and without oxygen vacancy defect on the electronic structures of anatase TiO₂ have been studied by first-principles calculations with DFT+U (DFT with Hubbard U correction) to treat the strong correlation of Ti 3d electrons and lanthanides 4f electrons. Our results revealed that dopant Ce is easy to incorporate into the TiO₂ host by substituting Ti due to its lower substitutional energy (∼−2.0 eV), but the band gap of the system almost keeps intact after doping. The Ce 4f states are located at the bottom of conduction band, which mainly originates from Ti 3d states. The magnetic moment of doped Ce disappears due to electron transfer from Ce to the nearest O atoms. For Pr and Gd doping, their substitutional energies are similar and close to zero, indicating that both of them may also incorporate into the TiO₂ host. For Pr doping, some 4f spin-down states are located next to the bottom of the conduction band and narrow the band gap of the doping system. However, for Gd doping, the 4f states are located in deep valence band and there is no intermediate band in the band gap. The magnetic moment of dopant Gd is close to the value of isolated Gd atom (∼7 μB), indicating no overlapping between Gd 4f with other orbitals. For Eu, it is hard to incorporate into the TiO₂ host due to its very higher substitutional energy. The results also indicated that oxygen vacancy defect may enhance the adsorption of the visible light in Ln-doped TiO₂ system.     

Study on the electronic structures of the reduced anatase TiO2 by the first-principle calculation

Employing the first-principle calculations based on the density functional theory (DFT) and the Molecule Orbital theory (MO), we have researched the electronic structures of the reduced anatase TiO₂ and its visible light photoactivity. The study is emphasized on the O vacancy, including the components of the defect states, the relationship with the bulk states and the way in which these electrons occupying the defect states are distributed in the real space. We find that the origin of the visible light photoactivity should be due to the transition of the excited electrons from the defect states σ_g orbital to the σ_u orbital in the upper conduction bands, rather than arising from the reduction of the band gap. The calculated results indicate that the localized defect states induced by the neutral and doubly ionized oxygen vacancies are all located in the band gap.     

First-principles study on electronic,magnetic properties and optical absorption of vanadium doped rutile TiO2

The electronic, magnetic properties and optical absorption of vanadium (V) doped rutile TiO₂ have been studied by the generalized gradient approximation GGA and GGA+U (Hubbard coefficient) approach respectively. On the one hand, we consider the influence of vanadium with different doping concentration on the electronic structure. On the other hand, we study double V atoms doped TiO₂, mainly study four V-doped TiO₂ configurations, and find the magnetic ground states are ferromagnetic state. For the TiO₂@V-V1, TiO₂@V-V3 and TiO₂@V-V4 configurations without O ion as bridge between V-V atoms, there will have a metastable state of antiferromagnetic configurations, while, for the TiO₂@V-V2 configurations with an O ion as bridge between V-V atoms, due to the existence of superexchange between V-O-V, there will only exist the ground state of ferromagnetic state and there are no other metastable configurations. Furthermore, the optical properties of V-doped TiO₂ are calculated. The results show that the V-doped TiO₂ has strong infrared light absorption and visible light absorption.     

Concentration-dependent electronic structure and optical absorption properties of B-doped anatase TiO2

The concentration-dependent electronic structures and optical properties of B-doped anatase TiO₂ have been calculated using the density functional theory. The calculated results indicate that the electronic structures of B-doped TiO₂ have changed compared with those of pure TiO₂, which is mainly due to the new midgap states induced by B doping. As to the optical properties, we calculate the imaginary part of dielectric function ε₂(ω) and optical absorption spectra of pure and B-doped TiO₂. Two transitions E₁ and E₂ emerged after B doping. The intensity of absorption is enhanced by B doping both in the UV and visible regions. According to the results of imaginary part of dielectric function ε₂(ω) and DOS, it can be concluded that the two optical transitions correspond to the transitions from the O 2p states in the top of valence band to the midgap states and from the midgap states to the Ti 3d states in the bottom of conduction band, respectively. These results have important implications for the further development of photocatalytic materials.     

N,Fe, La三掺杂锐钛矿型TiO2能带调节的理论与实验研究

采用基于密度泛函理论(DFT)的平面波超软赝势方法(PWPP), 利用Material studio 计算N, Fe, La三种元素掺杂引起的锐钛矿TiO₂晶体结构、能带结构和态密度变化. 并通过溶胶-凝胶法制得锐钛矿型本征TiO₂, N, Fe共掺杂TiO₂和N, Fe, La共掺杂TiO₂; 用X射线衍射和扫描电镜表征结构; 紫外-可见分光光度计检测TiO₂对甲基橙的降解效率变化. 计算结果表明, 由于N, Fe, La三掺杂TiO₂的晶格体积、键长等发生变化, 导致晶体对称性下降, 光生电子-空穴对有效分离, 同时在导带底和价带顶形成杂质能级, TiO₂禁带宽度由1.78 eV变为1.35 eV, 减小25%, 光吸收带边红移, 态密度数增加, 电子跃迁概率提升, 光催化能力增加. 实验结果表明: 离子掺杂使颗粒变小, 粒径大小: 本征TiO₂>N/Fe_TiO₂>N/Fe/La_TiO₂, 并测得N/Fe/La_TiO₂发光峰425 nm, 能隙减小, 光催化能力比N/Fe_TiO₂强, 增强原因是杂质能级和电子态数量增加引起.     

Nd高掺杂锐钛矿相TiO2电子结构和吸收光谱的第一原理研究

基于密度泛函理论平面波超软赝势方法, 采用第一原理研究未掺杂和不同浓度Nd高掺杂锐钛矿相TiO₂的电子结构和吸收光谱. 计算结果表明, 在本文限定的Nd高掺杂浓度范围内, Nd高掺杂浓度越小, 锐钛矿相TiO₂的禁带宽度越窄, 吸收光谱发生红移越显著. 计算结果与实验结果变化趋势相一致.     

High pressure phase transition and band structures of different phases in CeO2

We report a detailed theoretical calculation of the electronic band structure of CeO₂ in cubic and orthorhombic phases under pressure using a tight-binding linear muffin-tin orbital method (TB-LMTO) within local density approximation (LDA). The compressibility behavior of this compound was discussed in the light of the changes occurring in the electronic structure. Apart from the electronic band structure and structural stability calculations, the density of states (DOS) and Fermi energies (E_f) at various pressures are calculated. The calculated lattice parameter, transition pressure, bulk modulus and the pressure-volume relation are found out to be in good agreement with experimental results.     

Oxygen vacancy in N-doped Cu₂ O crystals:A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory.The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure.In N anion-doped Cu2O,some N 2p states overlap and mix with the O2p valence band,leading to a slight narrowing of band gap compared with the undoped Cu2O.However,it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

Ab initio studies on the electronic structure of CeSi5

We investigated the electronic properties of CeSi₅ by band structure calculation based on the density functional theory within LDA, LDA+U, and fully relativistic schemes. The calculated band structure scheme shows that the spin-orbit coupling splits the Ce 4f states into three manifolds. When the on-site Coulomb potential is added to the Ce-derived 4f orbitals, the degeneracy between the f orbitals would be lifted and they are split into lower Hubbard bands and upper Hubbard bands. It was found that quasiparticle mass enhancement inferred by comparing γ to the density of states (DOS) at the Fermi level indicates the effective mass of CeSi₅ is enhanced with the fully relativistic results.     

A first-principles study of the effect of oxygen vacancy on rutile Ti1−xCdxO2

A first-principles study has been performed to understand the effect of oxygen vacancy on the electronic properties of cadmium doped rutile TiO₂. We observe that Cd incorporation on rutile TiO₂ induces Cd p-states on the top of the valence band which is consistent with an earlier result of Zhang et al. (2008) [5]. Furthermore, by creating an oxygen vacancy, some new states are induced, which originate from the Ti 3d electrons at the middle of the band gap and spread up to the conduction band. Therefore, the band gap of the material reduces significantly, making it suitable to act as a better photocatalyst.     

Effect of correlation on electronic properties of NiO: A study from dynamical mean field theory

In order to describe a typical strongly correlated insulator NiO at electronic level, we perform a first principles calculation for temperature effect on electronic properties of NiO using a many-body method merging local density approximation (LDA) with dynamical mean field theory, so called the LDA+DMFT scheme. Band gap and density of states (DOS) are in good agreement with available experimental data and theoretical calculations, and Ni d-e_g and d-t_2g components both exhibit insulating character. Calculated hybridization functions indicate that Ni d-e_g states strongly hybrid with O p states at T = 58 K, 116 K, 145 K, 232 K and 464 K. In order to compare with experimental angle-resolved photoemission spectrum (ARPES), we also calculate momentum-resolved electronic spectrum function, which is established that obvious electronic excitation mainly arises from Ni d-t_2g states at temperature T = 232 K, and the spectrum functions between −0.5 eV and 0.0 eV are almost symmetric about certain k points. Finally, we analyze the effect of temperature on electronic properties of NiO by carrying out LDA+DMFT calculations at T = 58 K, 116 K, 145 K, 232 K and 464 K, respectively. Results show that temperature mainly influences the valence states of spectrum function and hybridization function, in particular high-lying states close to Fermi level. Electronic excitation distributions and spectrum characters in electronic spectrum function are also discussed.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.