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1.
Nanocrystalline nickel ferrite and zinc doped nickel ferrite thin films with general composition Ni1−xZnxFe2O4; x=0.0, 0.2 and 0.5 were fabricated by the spin-deposition technique. Citrate precursor method was adopted to prepare coating solution used for film deposition. This method resulted in single phase, transparent, homogeneous and crack-free nanocrystalline ferrite thin films at annealing temperature as low as 400 °C. The substrates used for film deposition were ITO-coated 7059 glass, fused quartz and Si (1 0 0). The thickness of films was found to be in the range ∼1000–5500 Å. The surface microstructure and morphology investigated by atomic force microscopy (AFM) confirmed the grain size of nickel–zinc ferrite films to be in nanometer range indicating nanocrystalline nature of the films. Dielectric properties such as the real (∈′) and imaginary parts (∈″) of complex permittivity were measured in the X-band microwave frequency region (8–12 GHz) by employing extended cavity perturbation technique. The MH hysteresis measurements on the films annealed at 650 °C revealed narrow hysteresis curves with Hc and Ms varying for different compositions.  相似文献   

2.
The preparation of ZnSn-substituted barium ferrite films by sputtering deposition was studied. The as-sputtered films were amorphous, and annealing at a minimum of 750 °C was required to crystallize the films, based on the X-ray diffraction analysis and the magnetic measurements. Scanning electron microscopy combined with energy-dispersive X-ray spectroscopic microanalysis confirmed that the films were single phase with the composition BaZnxSnxFe12−2xO19, x=0.2−0.3, and their thicknesses were 0.4-1.0 μm when annealed at 750-900 °C. Atomic and magnetic force microscopy studies showed no significant grain growth upon annealing and that the films consisted of single-domain grains forming interaction-cluster-type domains. The natural ferromagnetic resonance frequency was determined at around 4 GHz, together with substantial magnetic losses that make these films promising candidates for microwave absorbers.  相似文献   

3.
Metallo-organic decomposition derived dielectric thin films of calcium zirconate doped with various concentrations of strontium ((Ca, Sr)ZrO3) were prepared on Pt coated silicon substrate. Mainly in this paper, we present the investigations of their structural developments and present their electric and dielectric properties as well. The structural developments show that the CaZrO3 film has amorphous structure with carbonate existing when annealed at 600 °C, while annealed at 650 °C and above, the carbonate is decomposed and those films crystallize into perovskite phase without preferred orientation. In addition, the prepared (Ca, Sr)ZrO3 films with their Zr-O bonds affected by strontium doping are homogenous and stable as solid solutions in any concentration of strontium and all Bragg diffraction characteristics for the films shift downward with the increase in the concentration of strontium. Moreover, the electric properties show that the (Ca, Sr)ZrO3 films have very low leakage current density and high breakdown strength; typically, the CaZrO3 film annealed at 650 °C has the leakage current density approximately 9.5 × 10−8 A cm−2 in the field strength of 2.6 MV cm−1. Furthermore, the dielectric properties show that their dielectric constants are higher than 12.8 with very little dispersion in the frequency range from 100 Hz to 1 MHz and are independent of applied dc bias as well. The dielectric properties, in combination with the electric properties, make the materials promising candidates for high-voltage and high-reliability capacitor applications.  相似文献   

4.
Thin films of lithium ferrite (with general composition Li0.5Fe2.5O4) were fabricated at low temperatures (up to 650 °C) by citrate-route using spin-deposition technique. Deposited films consisted of nanometer-sized grains as evidenced by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. XRD patterns for annealed films showed broad peaks exhibiting a spinel phase. Size of nanocrystallites is estimated to be 3-7 nm using Scherrer's equation. Average grain size ∼8.5 nm is observed from TEM images of films annealed at 650 °C. Scanning electron micrographs show the formation of spherical aggregates of around 130 nm in diameter. The AFM analysis clearly evidenced the development of nanograins even at low (∼500 °C) annealing temperatures. Significant decrease in complex dielectric permittivity (′ − j″) with frequency is observed in the low frequency (100 Hz-1 MHz) as well as in X-band microwave frequency (8-12 GHz) region. ′ is found to be in the range of 15.7-33.9 in low frequency region, whereas in X-band microwave frequency region, it is found to lie between 3.9 and 4.9. Similarly, ″ is found to be 0.16-5.9 in the low frequency region, and 0.002-0.024 in the X-band microwave frequency region. Room temperature dc resistivity of these films is estimated to lie in the range of 106-108 Ω cm. These results strongly suggest that citrate-route processed nanocrystalline lithium ferrite thin films are promising candidates for monolithic microwave integrated circuits (MMICs).  相似文献   

5.
Li0.5Fe2.5−xMnxO4 (0≦x≦1.0) powders with small and uniformly sized particles were successfully synthesized by microwave-induced combustion, using lithium nitrate, ferric nitrate, manganese nitrate and carbohydrazide as the starting materials. The process takes only a few minutes to obtain as-received Mn-substituted lithium ferrite powders. The resultant powders annealed at 650 °C for 2 h and were investigated by thermogravimeter/differential thermal analyzer (TG/DTA), X-ray diffractometer (XRD), transmission electron microscopy (TEM), vibrating sample magnetometer (VSM), and thermomagnetic analysis (TMA). The results revealed that the Mn content were strongly influenced the magnetic properties and Curie temperature of Mn-substituted lithium ferrite powder. As for sintered Li0.5Fe2.5−xMnxO4 specimens, substituting an appropriate amount of Mn for Fe in the Li0.5Fe2.5−xMnxO4 specimens markedly improved the complex permeability and loss tangent.  相似文献   

6.
W.B. Mi 《Applied Surface Science》2006,252(24):8688-8694
FePt-C granular films doped with different Cu atomic fractions (xCu) were fabricated using facing-target sputtering at room temperature and subsequently annealed at 650 °C. Structural analyses reveal that the as-deposited films are in amorphous state. Appropriate Cu addition (xCu = 14) can improve the ordering of L10 FePt phase, and excessive Cu doping destroys the formation of ordered L10 phase with the appearance of Fe3C and CuPt phases. Besides, preferential graphitization of amorphous carbon (a-C) occurs near large metal particles upon annealing. Annealing turns the as-deposited superparamagnetic films into ferromagnetic associated with coercivity peaks at xCu = 14, drops from ∼11.2 kOe at 5 K to ∼7.2 kOe at 300 K in a 50 kOe field.  相似文献   

7.
Mn-Zn ferrite powders (Mn0.5Zn0.5Fe2O4) were prepared by the nitrate-citrate auto-combustion method and subsequently annealed in air or argon. The effects of heat treatment temperature on crystalline phases formation, microstructure and magnetic properties of Mn-Zn ferrite were investigated by X-ray diffraction, thermogravimetric and differential thermal analysis, scanning electron microscopy and vibrating sample magnetometer. Ferrites decomposed to Fe2O3 and Mn2O3 after annealing above 550 °C in air, and had poor magnetic properties. However, Fe2O3 and Mn2O3 were dissolved after ferrites annealing above 1100 °C. Moreover, the 1200 °C annealed sample showed pure ferrite phase, larger saturation magnetization (Ms=48.15 emu g−1) and lower coercivity (Hc=51 Oe) compared with the auto-combusted ferrite powder (Ms=44.32 emu g−1, Hc=70 Oe). The 600 °C air annealed sample had the largest saturation magnetization (Ms=56.37 emu g−1) and the lowest coercivity (Hc=32 Oe) due to the presence of pure ferrite spinel phase, its microstructure and crystalline size.  相似文献   

8.
The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO2)3(SiO2) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 1012 cm−2, and the leakage current was 0.4 μA/cm2 at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO2 growth at the interface.  相似文献   

9.
The effect of post sintering annealing on the dielectric response of (Pb1−xBax)(Yb0.5Ta0.5)O3 ceramics in the diffuse phase transition range (x=0.2) has been investigated. The samples are prepared by conventional solid-state reaction method. The samples are sintered at 1300 °C for 2 h and annealed at different temperatures (800, 900 and 1000 °C) for 8 h and at 800 °C for different time durations (8, 12 and 24 h). A significant change in the dielectric response has been observed in all the samples. The dielectric constant increases remarkably and the dielectric loss tangent decreases. The dielectric peaks of the annealed samples are observed to be more diffused with noticeable frequency dispersion compared to the as sintered sample.  相似文献   

10.
The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO2/Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi2O3, BiNbO4 and Bi5Nb3O15 can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10−4 at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.  相似文献   

11.
Fe74Ni3Si13Cr6W4 amorphous alloy powders were annealed at different temperature (T) for 1.5 h to fabricate the corresponding amorphous and nanocrystalline powders. The influences of T on the crystalline structure, morphology, magnetic and microwave electromagnetic properties of the resultant samples were investigated via X-ray diffraction, scanning electron microscopy, vibrating sample magnetometer and vector network analyzer. The results show that the powder samples obtained at T of 650 °C or more are composed of lots of ultra-fine α-Fe(Si) grains embedded in an amorphous matrix. When T increases from 350 to 750 °C, the saturated magnetization and coercivity of the as-annealed powder samples both increase monotonously whereas the relative real permittivity shows a minimal value and the relative real permeability shows a maximal value at T of 650 °C. Thus the powder samples annealed at 650 °C show optimal reflection loss under −10 dB in the whole C-band. These results here suggest that the annealing heat treatment of Fe-based amorphous alloy is an effective approach to fabricate high performance microwave absorber with reasonable permittivity and large permeability simultaneously via adjusting T.  相似文献   

12.
The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge1−xCx) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH4/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures (Ta) above 300 °C decreases, whereas that of C-H bonds show a decrease only when Ta exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at Ta above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge1−xCx films are almost constant against Ta, which can be ascribed to the unchanged ratios of Ge/C and sp2-C/sp3-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge1−xCx double-layer film on ZnS substrate is still maintained after annealing at 700 °C.  相似文献   

13.
Smooth Fe78Si10B12 thin films were prepared by r.f. sputtering with the very slow deposition rate of 0.59 nm/min. The as-deposited films were not fully amorphous, instead α-Fe(Si) nanocrystallites were found to be embedded in the amorphous matrix. The saturation magnetostriction λs of the as-deposited film is about 6.5 × 10−6. After annealing at 540 °C for 1 h in an ultrahigh vacuum (4.5 × 10−5 Pa), the fraction of α-Fe(Si) crystalline phase largely increased, and correspondingly the λs decreased to 4.5 × 10−7. Ripple domain structures were observed in the as-deposited film, while dense stripe domains were observed in the annealed sample, characterized by a very narrow domain width of 80 nm. (1 1 0) texture and island-like configuration of α-Fe(Si) nanocrystallites formed by the annealing treatment are responsible for the perpendicular anisotropy. For the as-deposited film, the magnetization curves increased linearly with the increase of the magnetic field, and showed the very small hysteresis. On the other hand, the annealed sample clearly showed a very steep jump near the origin, which is due to the switch process of the dense stripe domain.  相似文献   

14.
In this paper, the structural, thermal and magnetic properties of Ni1−xMnxFe2O4 are presented. It is observed that high concentration of Mn2+ ions into NiFe2O4 tends to reduce the particle size. Calcination at 500 °C has resulted in the growth of Ni1−xMnxFe2O4 nanoparticles, but the calcination at 900 °C has led to the evaporation of the majorities of the polyvinyl alcohol. After calcination at 900 °C, crystallographically oriented NiMnFe2O4 nanoparticles are formed. These Ni1−xMnxFe2O4 nanoparticles show hysteresis behaviour upon magnetization. On the other hand, saturation magnetization (Ms) values decreases with increasing Mn content in ferrite due to the influence of Mn2+ ion in the sub lattice.  相似文献   

15.
Solution Growth Technique (SGT) has been used for deposition of Zn1−xCdS nanocrystalline thin films. Various parameters such as solution pH (10.4), deposition time, concentration of ions, composition and deposition and annealing temperatures have been optimized for the development of device grade thin film. In order to achieve uniformity and adhesiveness of thin film on glass substrate, 5 ml triethanolamine (TEA) have been added in deposition solution. The as-deposited films have been annealed in Rapid Thermal Annealing (RTA) system at various temperature ranges from 100 to 500 °C in air. The changes in structural formation and optical transport phenomena have been studied with annealing temperatures and composition value (x). As-deposited films have two phases of ZnS and CdS, which were confirmed by X-ray diffraction studies; further the X-ray analysis of annealed (380 °C) films indicates that the films have nanocrystalline size (150 nm) and crystal structure depends on the films stoichiometry and annealing temperatures. The Zn0.4CdS films annealed at 380 °C in air for 5 min have hexagonal structure where as films annealed at 500 °C have represented the oxide phase with hexagonal structure. Optical properties of the films were studied in the wavelength range 350-1000 nm. The optical band gap (Eg=2.94-2.30 eV) decreases with the composition (x) value. The effect of air rapid annealing on the photoresponse has also been observed on Zn1−xCdS nanocrystal thin films. The Zn1−xCdS thin film has higher photosensitivity at higher annealing temperatures (380-500 °C), and films also have mixed Zn1−xCdS/Zn1−xCdSO phase with larger grain size than the as-deposited and films annealed up to 380 °C. The present results are well agreed with the results of other studies.  相似文献   

16.
Zn1−xNixFe2O4 ferrite nanoparticles were prepared by sol–gel auto-combustion and then annealed at 700 °C for 4 h. The results of differential thermal analysis indicate that the thermal decomposition temperature is about 210 °C and Ni–Zn ferrite nanoparticles could be synthesized in the self-propagating combustion process. The microstructure and magnetic properties were investigated by means of X-ray diffraction, scanning electron microscope, and Vibrating sample magnetometer. It is observed that all the spherical nanoparticles with an average grain size of about 35 nm are of pure spinel cubic structure. The crystal lattice constant declines gradually with increasing x from 0.8435 nm (x=0.20) to 0.8352 nm (x=1.00). Different from the composition of Zn0.5Ni0.5Fe2O4 for the bulk, the maximum Ms is found in the composition of Zn0.3Ni0.7Fe2O4 for nanoparticles. The Hc of samples is much larger than the bulk ferrites and increases with the enlarging x. The results of Zn0.3Ni0.7Fe2O4 annealed at different temperatures indicate that the maximum Ms (83.2 emu/g) appears in the sample annealed at 900 °C. The Hc of Zn0.3Ni0.7Fe2O4 firstly increases slightly as the grain size increases, and presents a maximum value of 115 Oe when the grains grow up to about 30 nm, and then declines rapidly with the grains further growing. The critical diameter (under the critical diameter, the grain is of single domain) of Zn0.3Ni0.7Fe2O4 nanoparticles is found to be about 30 nm.  相似文献   

17.
BixY3−xFe5O12 thin films have been grown on GGG (Gd3Ga5O12) (1 1 1) substrates by the combinatorial composition-spread techniques under substrate temperature (Tsub) ranging from 410 to 700 °C and O2 pressure of 200 mTorr. In order to study the effect of substrates on the deposition of BixY3−xFe5O12 thin films, garnet substrates annealed at 1300 °C for 3 h were also used. Magneto-optical properties were characterized by our home-designed magneto-optical imaging system. From the maps of Faraday rotation angle θF, it was evident that the Faraday effect appears only when Tsub = 430-630 °C. θF reaches to the maximum value (∼6°/μm, λ = 632 nm) at 500 °C, and is proportional to the Bi contents. XRD and EPMA analyses showed that Bi ions are easier to substitute for Y sites and better crystallinity is obtained for annealed substrates than for commercial ones.  相似文献   

18.
Fine powders of NiCuZn ferrite with composition Ni(0.7−x)CuxZn0.3Fe2O4 (where x=0, 0.2, 0.4 and 0.6) were prepared by the citrate precursor method. X-ray diffraction measurements confirm the formation of single-phase cubic spinel structure. The grain size was estimated by SEM micrograph which increases with Cu content. Dielectric constant (?) and loss tangent (tan δ) were measured as a function of frequency. The ? and tan δ show a decreasing trend with increase of frequency for all the samples. The DC resistivity was measured as a function of temperature. The temperature-dependent DC resistivity measurements show that the room-temperature DC resistivity of NiCuZn ferrite with x=0.2 is of the order of 109 Ω cm. The AC conductivity (σAC) was studied as a function of frequency. The hysteresis data indicate that the maximum saturation magnetization of 38.66 emu/g is obtained for the composition with x=0.2.  相似文献   

19.
Nanocrystalline spinel ferrite thin films of CoxFe3−xO4 (x=0.3x=0.3, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm3, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.  相似文献   

20.
Mixed manganese-zinc and nickel-zinc ferrites of composition Mn0.2Ni0.8−xZnxFe2O4 where x=0.4x=0.4, 0.5 and 0.6 have been synthesized by the citrate precursor technique. Decomposition of the precursor at temperatures as low as 500 °C gives the ferrite powder. The ferrites have been investigated for their electrical and magnetic properties such as saturation magnetization, initial permeability, Curie temperature, AC-resistivity and dielectric constant as a function of sintering temperature and zinc content. Structural properties such as lattice parameter, grain size and density are also studied. The mixed compositions exhibited higher saturation magnetizations at sintering temperatures as low as 1200 °C. While the Curie temperature decreased with zinc content, the permeability was found to increase. The AC-resistivity ranged from 105–107 Ω cm and decreased with zinc content and sintering temperature. The dielectric constants were lower than those normally reported for the Mn–Zn ferrites. Samples sintered at 1400 °C densified to about 94% of the theoretical density and the grain size was of the order of about 1.5 μm for the samples sintered at 1200 °C and increased subsequently with sintering temperature.  相似文献   

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