具有新型有源区的量子级联探测器(特邀)

量子级联探测器是一种光伏型的子带间跃迁红外探测器,通过厚度渐变的啁啾量子阱中台阶状的子带分布,产生内建电场,使得有源区中的光生载流子定向输运,器件工作时无需外加偏压,避免了暗电流噪声的产生,能够实现室温长波红外响应。由于子带间跃迁吸收系数小、具有偏振选择性,量子级联探测器目前存在响应率低、对正入射响应无响应、探测率对温度敏感等问题。针对这些问题,本文介绍三种新型量子级联探测器有源区的设计,包括量子点/阱耦合、束缚-微带斜跃迁和小能量台阶有源区,在中波、长波和甚长波波段展现出优良的器件性能。     

半导体量子点及其应用(Ⅱ)

理论分析表明，基于三维受限量子点的分离态密度函数的量子器件，以其独特的优异电学、光学性能和极低功耗，在纳米电子学、光电子学，生命科学和量子计算等领域有着极其广泛的应用前景，本文仅就量子点在量子点激光器、量子点红外探测器、单光子光源、单电子器件和量子计算机等方面的应用作一简单的介绍．     

带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应

利用分子束外延技术(MBE),在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品,并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力,抑制了量子点中In组分的偏析,提高了外延层的生长质量,降低了势垒高度,使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明,生长条件的优化提高了器件的红外响应,具有组分渐变的InGaAs层的探测器响应波长发生明显红移。     

红外光电探测技术研究现状及展望(特邀)

红外探测技术在激光测距、成像、遥感、夜视等领域有重要应用,降低红外光电探测器的尺寸、重量、功耗和成本,以及提高探测器的性能是目前的研究重点。本文综述了红外探测器技术的发展历程、工作原理及研究现状并对其未来发展方向进行了展望。内容主要涵盖基于碲镉汞、Ⅱ类超晶格、量子阱、量子点、硅基锗锡等材料的光子型红外光电探测器及其阵列。红外系统成本降低最终取决于在常温条件下耗尽电流限探测器阵列像素密度是否与系统光学元件的背景极限和衍射极限性能匹配,选择HgCdTe、Ⅱ类超晶格和胶体量子点等材料可提高光子探测器室温性能。各种红外探测器在性能方面各具特色,在实际应用中互为补充。     

新颖的量子阱红外探测器

本文介绍了新型量子阱红外探测器的原理、特点、性能及其在实际应用中的重要价值，与ＨｇＣｄＴｅ红外探测器作了比较，同时还评述了国内外的发展现状．     

甚长波量子阱红外探测器的暗电流特性研究

基于载流子在量子结构中的输运理论研究了甚长波量子阱红外探测器(峰值响应波长15μm，量子阱个数大于40)的载流子的输运性质.研究结果表明，在甚长波量子阱红外探测器中，电流密度一般很低，暗电流主要来源于能量高于势垒边的热激发电子.通过薛定谔方程和泊松方程以及电流的连续性方程的自洽求解，发现外加偏压下电子浓度在甚长波器件各量子阱的分布发生较大变化，电场在整个器件结构上呈非均匀分布，靠近发射极层的势垒承担的电压远远高于均匀分布的情形.平带模型假定电压在器件体系上均匀分布，导致小偏压下的理论计算值远远低于实验值. 关键词： 甚长波量子阱红外探测器 量子波输运 暗电流     

量子点红外探测器在空间光电系统中的应用

为了更好地开发和利用空间资源,各国竞相通过向空间发射卫星、空间站、航天飞机等航天器来建立探测站点和通信网络以占据具有最大优势的位置,其中空间光电系统在探索新资源方面起到关键的作用.点对点的距离远、空间辐射强、温差较大等空间环境因素严重影响着光电系统性能的发挥,也向空间光电系统的稳定性和可靠性提出了挑战.本文提出将具有较高的探测灵敏度、工作温度、抗辐射能力和响应带宽的新型量子点红外探测器应用于空间光电系统,阐述了量子点红外探测器的基本工作原理和优点,并讨论了量子点红外探测器在空间应用的技术要求,分析了其在空间的激光雷达、卫星光通信和成像或者非成像系统中的应用.     

GaAs／AlGaAs多量子阱红外探测器研制成功

红外量子阱探测器是利用量子阱材料导带内子带间光跃迁对红外辐射的强吸收,来测量红外辐射强度的一种新型的、快速灵敏的红外探测器.其工作原理是:首先利用掺杂使量子阱中的基态上填充上具有一定浓度的二维电子,当入射光子能量■等于子带间能隙时。照射到器件接收面上的红外辐射将处于基态上的电子激发到较高激发态上,这些激发热电子在外场作用下,在匹配的外电路中形成与入射光强度成正比的电流或电压信号.该探测器的响应波段可以覆盖8—14μm的波长范围,响应速度快(皮秒量级),灵敏度较高(D*～1010cmHz1/2/W),并且可以通过改变材料的生长…     

新型硅基异质结和量子阱红外探测器

介绍了近年来新发展起来的几种硅基远红外探测器件，其中包括硅化物／Ｇｅｘｓｉ１－ｘ肖特基势垒型探测器，锗硅异质结内光电发射探测器，锗硅／硅多量子阱型探测器和δ掺杂阱型探测器，并就这些器件的工作原理及影响其响应率，截止波长和工作温度的因素分别进行了讨论和比较。     

量子阱红外探测器的光耦合

本文从有效质量近似理论出发，在量子阱导带内子带间光吸收分析的基础上，评述了ｎ型量子阱红外探测器的光耦合。着重研究适宜于量子阱红外探测器的不同种类的光栅，并从理论上优化出高耦合效率的各种光栅参数     

Characteristics and developments of quantum-dot infrared photodetectors

Quantum dots infrared photodetectors (QDIPs) theoretically have several advantages compared with quantum wells infrared photodetectors (QWIPs). In this paper, we discuss the theoretical advantages of QDIPs including the normal incidence response, lower dark current, higher responsivity and detectivity, etc. Recent device fabrication and experiment results in this field are also presented. Based on the analysis of existing problems, some approaches that would improve the capability of the device are pointed out.     

Investigation of the quantum dot infrared photodetectors dark current

Quantum dot infrared photodetectors (QDIPs) are more efficient than other types of semiconductor based photodetectors; so it has become an actively developed field of research. In this paper quantum dot infrared photodetector dark current is evaluated theoretically. This evaluation is based on the model that was developed by Ryzhii et al. Here it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of QDIPs; moreover we have considered Richardson effect, which has not been taken into account in previous research. Then a new formula for estimating average number of electrons in a quantum dot infrared photodetector is derived. Considering the Richardson effect and field-assisted tunneling mechanisms in the dark current improves the accuracy of algorithm and causes the theoretical data to fit better in the experiment. The QDIPs dark current temperature and biasing voltage dependency, contribution of thermionic emission and field-assisted tunneling at various temperatures and biasing voltage in the QDIPs dark current are investigated. Moreover, the other parameter effects like quantum dot (QD) density and QD size effect on the QDIPs dark current are investigated.     

Review of current progress in quantum dot infrared photodetectors

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. We review the progress made by QDIP technology over the last few years and compare QDIPs with quantum well infrared photodetectors (QWIPs). It is shown that the performance of QDIPs has significantly improved using novel architectures such as dots‐in‐a‐well designs, and large‐format (1 K × 1 K) focal plane arrays have been realized. However, even though there are significant reports of performance parameters better than QWIPs from single‐pixel devices, QDIP‐based focal plane arrays are still a factor of 3–5 worse in terms of noise equivalent temperature difference. We discuss the reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of QD‐based technology.     

Comparison studies of infrared photodetectors with a quantum-dot and a quantum-wire base

This paper mainly presents a theoretical analysis for the characteristics of quantum dot infrared photodetectors (QDIPs) and quantum wire infrared photodetectors (QRIPs). The paper introduces a unique mathematical model of solving Poisson’s equations with the usage of Lambert W functions for infrared detectors’ structures based on quantum effects. Even though QRIPs and QDIPs have been the subject of extensive researches and development during the past decade, it is still essential to implement theoretical models allowing to estimate the ultimate performance of those detectors such as photocurrent and its figure-of-merit detectivity vs. various parameter conditions such as applied voltage, number of quantum wire layers, quantum dot layers, lateral characteristic size, doping density, operation temperature, and structural parameters of the quantum dots (QDs), and quantum wires (QRs). A comparison is made between the computed results of the implemented models and fine agreements are observed. It is concluded from the obtained results that the total detectivity of QDIPs can be significantly lower than that in the QRIPs and main features of the QRIPs such as large gap between the induced photocurrent and dark current of QRIP which allows for overcoming the problems in the QDIPs. This confirms what is evaluated before in the literature. It is evident that by increasing the QD/QR absorption volume in QDIPs/QRIPs as well as by separating the dark current and photocurrents, the specific detectivity can be improved and consequently the devices can operate at higher temperatures. It is an interesting result and it may be benefit to the development of QDIP and QRIP for infrared sensing applications.     

Photoconductivity of Ge/Si quantum dot photodetectors

Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I–V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current.     

A numerical approach for analyzing quantum dot infrared photodetectors' parameters

Quantum dot infrared photodetectors (QDIPs) have many advantages over other types of semiconductor-based photodetectors. However some of its characteristics have been investigated theoretically, there are many unstudied points. In this paper a new approach is presented to evaluate quantum dot infrared photodetectors dark current and photocurrent. In this study, it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of quantum dot detectors. Based on these assumptions, new formula for average number of electron in a quantum dot for both, dark and illumination condition is calculated, which is more accurate than the previous reported formulas; because in deriving previous reported formulas, it was assumed only thermionic emission determines dark current but field-assisted tunneling mechanisms has not been considered. Then numerical method is used to calculate the average number of electron in a quantum dot and to determine dark current and photocurrent. The theoretical results are compared with experimental data. They have good agreement with available experimental data.     

Characteristics analysis of quantum wire infrared photodetectors under both dark and illumination conditions

This paper presents a theoretical analysis for the characteristics of quantum wire infrared photodetectors (QRIPs). Mathematical model describing this device is introduced. Maple 4 software is used to device this model. The developed model is used to investigate the behavior of the device with different values of performance parameters such as number of quantum wire layers, lateral characteristic size, and temperature. The modeling results are validated against experimental published work and full agreements are obtained. Several performance parameters are tuned to enhance the performance of these quantum photodetectors through the presented modeling. The resultant performance characteristics and comparison among both quantum well infrared photodetectors (QWIPs) and QRIPs are presented in this work. From the obtained results we notice that the total dark current in the QRIPs can be significantly lower than that in the QWIPs. Moreover, main features of the QRIPs such as the large gap between the induced photocurrent and dark current open the way for overcoming the problems of quantum dot infrared photodetectors (QDIPs).     

Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.     

Demonstration of 640 × 512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIPs) are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR dot-in-a-well (DWELL) structures based on the InAs/InGaAs/GaAs material system. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. DWELL QDIPs were also experimentally shown to absorb both 45° and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. The most recent devices exhibit peak responsivity out to 8.1 μm. Peak detectivity of the 8.1 μm devices has reached 1 × 10¹⁰ Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640 × 512 pixels QDIP imaging FPA. This QDIP FPA has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60 K operating temperature.     

Performance improvement of quantum dot infrared photodetectors through modeling

This paper presents a method to evaluate and improve the performance of quantum dot infrared photodetectors (QDIPs). We proposed a device model for QDIPs. The developed model accounts for the self-consistent potential distribution, features of the electron capture and transport in realistic QDIPs in dark and illumination conditions. This model taking the effect of donor charges on the spatial distribution of the electric potential in the QDIP active region. The model is used for the calculation of the dark current, photocurrent and detectivity as a function of the structural parameters such as applied voltage, doping QD density, QD layers, and temperature. It explains strong sensitivity of dark current to the density of QDs and the doping level of the active region. In order to confirm our models and their validity on the practical applications, a comparison between the results obtained by proposed models and that experimentally published are conducted and full agreement is observed. Results show the effectiveness of methodology introduced.