A geometric and analytic approach to the process of melt vitrification. I. Thermodynamic treatment

By using simple geometric concepts, general thermodynamic dependences governing the process of vitrification are derived. The thermodynamic driving forces of crystallization, ΔG_f,c(T), and stabilization, ΔG_st(T), melts and glasses are considered in the entire temperature interval from temperatures below the glass transition temperature, T_g, to temperatures high above the melting point, T_m. It is show that at large deviations from T_g the temperature dependence of the driving force for stabilization, ΔG_st(T), is non-symmetric and expressions derived by a Taylor expansion become a poor approximation. By using an appropriate thermodynamic model, a more general expression for ΔG_st(T) is obtained and the thermodynamic basis for the existence of superheated glasses is established. The thermodynamic instability of glasses below and above T_g, i.e., of supercooled and superheated glasses is discussed.     

Superhydrophobic silica aerogels based on methyltrimethoxysilane precursor

The experimental results on the synthesis and physicochemical properties of superhydrophobic silica aerogels, with the highest ever obtained contact angle (173°), using methyltrimethoxysilane (MTMS) precursor, methanol (MeOH) solvent and ammonium hydroxide (NH₄OH) catalyst, are reported. The molar ratios of NH₄OH/MTMS (N), H₂O/MTMS (H) and MeOH/MTMS (M) were varied from 4.25 × 10⁻² to 3.5 × 10⁻¹, 2 to 10 and 1.75 to 17, respectively. It has been found that the gelation time decreases with increase in N and H values and it increases with increase in M values. The bulk density of the aerogels was found to decrease with increase in N, H and M values. It has been observed that the volume shrinkage increases with decrease in N and H values and increases with M values. In the case of catalyst concentration variation, the contact angle (θ) increases slightly from 159° to 167° with increase in N values. On the other hand, in the case of H₂O and MeOH variations, the θ first increases from 162° and 160° up to the values of 173° and 167° and then decreases to 160° and 159° with increase in H and M values, respectively. All the MTMS aerogels are opaque to the visible light. The aerogels retain their hydrophobicity up to a temperature of 480 ° C. The thermal conductivity of the aerogels was found to be around 0.095 W/m K except for the aerogels with higher bulk density (>0.3 g/cm³, at a lower H value of 2) whose thermal conductivity was around 0.109 W/m K. The aerogels have been characterized by Fourier transform infrared spectra (FTIR), thermogravimetric and differential thermal analyses (TGA-DTA) and scanning electron microscopy (SEM) techniques. The results have been discussed by taking into account the hydrolysis and condensation reactions and SEM observations.     

Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x

AC conductivity and dielectric relaxation measurements of the bulk amorphous compositions in the pseudo-binary system (As₂S₃)_1-x(PbS)_x (x = 0, 0.1, 0.4 and 0.5) in the frequency range 500 Hz-10 kHz and in the temperature span 180–450 K are reported. The temperature dependence of the ac conductivity, σ_ac(ω), has a broad structure at all frequencies in compositions with x = 0.1, 0.4 and 0.5 whose peak position is not thermally activated. A similar structure was also observed in the data on the dielectric constant, ε₁, which peaked at a frequency of 1 kHz in the composition with x = 0.5. Analysis of the results using the correlated barrier hopping model revealed that the electronic conduction takes place by single polaron and bipolaron hopping processes at high and low temperatures, respectively, in compositions containing Pb. The microstructure and phase-separation in the glasses containing Pb influence the electrical transport and dielectric dispersion. This study has revealed the possible presence of a phase transformation at around 300 K at a frequency of 1 kHz in the dielectric dispersion behaviour of composition with x = 0.5.     

SIMS study of the concentration of dopants in LPCVD silicon thin films

Measurements of solid phase dopant concentration (S) of LPCVD Si thin films as a function of substrate temperature (T_s = 500−640 ° C) and gas phase doping ratio (R = 1 × 10⁻⁵ −4 × 10⁻²) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b(T)R is observed for B-doped film with b(T) varying from 4 to 50 depending on T_s. Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones.     

Anomalous paramagnetism in pressure quenched CdS

Very large “paramagnetic” on positive magnetization has been observed in “pressure quenched” samples of CdS. Pressure quenching is a formative process involving pressure release rates ≈10⁶ bar s⁻¹.

The pressure quenched samples were prepared by pressure quenching at room temperature from above 30 kbar, i.e. from above the insulation-to-metal like transition. magnetization as a function of magnetic field was measured at 293 and 77 K using a vibrating specimen magnetometer. A linear M versus H behavior is observed in fields above a few hundred gauss, with values of χ = (M/H) ≈ 10^-4 cgs units. In some specimens saturation occurs, while in others the magnetization passes through a maximum. The maximum value of the magnetic moment M observed is of the order of tens of gauss.     

Curvature- and temperature-dependent interfacial tension in classical nucleation theory

Curvature- and temperature-dependent interfacial tension is introduced in classical nucleation theory (CT-CNT). In this case, the nucleation rate depends on temperature, T, viscosity, η, the reduced surface tension, , the difference between the chemical functions of the liquid and solid phase, Δμ, and unlike with the common classical nucleation theory (CNT), also on the derivative of this function, ∂Δμ/∂T. Because of this latter dependency, the nucleation rate is highly sensitive to Δμ and no approximation formula can be used for this function. Kauzmann's catastrophe can be introduced artificially by approximation formulas that are commonly used in CNT. The latter theory is not sensitive to this problem.     

Electric field induced percolation

The I–V characteristics of heat-treated polyacrylonitrile (PAN) thin film samples obtained by pyrolysis at temperatures T_p up to 550°C are considered. The effect of iodine-doping is investigated by comparison with undoped material. The I–V characteristics of doped samples exhibit linear behaviour at low voltage then a strong increase of conductivity. The bend shifts down to low voltages when the pyrolysis temperature T_p is increased. Experimental results are interpreted with the help of two randomly distributed phases in the medium in which doping involves an electric field aided percolation phenomenon.     

Microstructure and growth rate of chemical vapour deposited TiN films in a vertical cold wall reactor

TiN films were grown on SUS304 substrates heated by an induction furnace in a vertical cold wall reactor. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the microstructures of films obtained at different deposition conditions (temperature, gas flow rate and gas composition). Film structures obtained in the present vertical reactor had the following features compared with those in the tubular reactor: (1) Abnormally grown “star-shaped” crystals were observed on the surfaces of films deposited in the following ranges of total gas flow rate (Q_T), temperature (T) and partial pressures (P): 9.0×10⁻⁶ ≤ Q_T ≤ 1.6×10⁻⁵ m³ s⁻¹, 1223 ≤ T ≤ 1273 K, 0.92 ≤ P_TiCl4 ≤ 6.18 kPa, P_H2 = P_N2. The matrix grains were responsible for (211) preferred orientation. (2) Surface morphologies did not vary so much with P_TiCl4. On the other hand, a drastic change was brought about by adding HCl to the source gas, i.e., plate-shaped crystals dominated and the large “star-shaped” crystals were no longer present. (3) The apparent activation energy for deposition reaction was 230 kJ/mol (1173 ≤ T ≤ 1273 K) and 76.5 kJ/mol (1273 ≤ T ≤ 1373 K) at P_TiCl4 = 2.43 kPa and P_H2 = P_N2 = 49.45 kPa.     

Optimal crystal growth conditions of thin films of Bi2Te3 semiconductors

Crystal growth conditions of Bi₂Te₃ narrow bandgap semiconductors have been studied using molecular beam epitaxy method. It was applied to the growth of Bi₂Te₃ on Bridgman single-crystal substrate Sb₂Te₃. Substrate ingots were taken from the natural cleavage along the (0001) plane. The deposited conditions have been studied as a function of substrate temperature (T_s) and flux ratio (F_R=F(Te)/F(Bi)). The quality of deposited layers was controlled by X-ray diffraction, scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS) depth profiling and energy-dispersive X-ray (EDX) microanalyser. The sticking coefficients K_s(Te) and K_s(Bi) of the elements that compose Bi₂Te₃ were determined. It was found that the stoichiometry of deposited layers depended on substrate temperature and flux ratio. It was observed that all deposited layers were single-crystal in the orientation of their substrates with a small shift due to the stress in layer.     

Density and surface tension of molten calcium fluoride

The density and the surface tension of molten calcium fluoride have been measured in the temperature range from 1690 to 1790 K by an improved Archimedian method and a ring depressing technique (J. Crystal Growth 187 (1998) 391), respectively. The ring depressing technique was demonstrated as an effective technique to measure the surface tension in comparison with the conventional ring pulling technique. The density varied with the temperature change corresponding to a linear relationship: ρ=3.767−6.94×10⁻⁴T (K). The density of the CaF₂ melt at the melting point is 2.594 g/cm³, which is equal to the result obtained by Shiraishi and Watanabe (Bull. Res. Inst. Miner. Dressing Metal, Tohoku Univ. 34 (1978) 1), but the temperature coefficient of the density is different from the results obtained by other investigators. The thermal expansion coefficient of calcium fluoride melt linearly increases with temperature heating. The surface tension of molten calcium fluoride indicates a negative linear relationship as a function of the melt temperature: γ(T)=442.4−0.0816×T(K) (mN/m). The surface tension measured using the ring depressing technique is larger than those results obtained by other techniques.     

Relationship between T0, Tg and their pressure dependence for supercooled liquids

We show that simple expressions can be derived from the Vogel–Fulcher–Tammann (VFT) law relating the glass transition temperature T_g, the VFT temperature T₀, their pressure derivatives, the steepness index of the ‘Angell plot’ and the strength parameter D of the VFT equation, in good agreement with experimental data. In the same way one can describe the dependence of the dT_g/dP on the relaxation time τ_g chosen to define the temperature T_g. Thus, this procedure allows a consistent rescaling and comparison of pressure dependent parameters obtained from different experiments and simulations.     

Physical chemistry of binary organic eutectic and monotectic alloys; 1,2,4,5-tetrachlorobenzene−β-naphthol and 1,2,4,5-tetramethylbenzene-succinonitrile systems

Phase diagrams of 1,2,4,5-tetrachlorobenzene–β-naphthol and 1,2,4,5-tetramethylbenzene–succinonitrile systems which are organic analogues of a nonmetal–nonmetal and a nonmetal–metal system, respectively, show the formation of a simple eutectic (melting point 103.7°C) with 0.71 mole fraction of β-naphthol in the former case and a monotectic (melting point 76.0°C) with 0.07 mole fraction of succinonitrile and a eutectic (melting point 52.5°C) with 0.97 mole fraction of succinonitrile in the latter case. The growth behaviour of the pure components, the eutectics and the monotectic studied by measuring the rate of movement of the solid–liquid interface in a capillary, suggests that the data obey the Hillig–Turnbull equation, v=u(ΔT)ⁿ, where v is the growth velocity, ΔT is the undercooling and u and n are constants depending on the nature of the materials involved. From the values of enthalpy of fusion determined by the DSC method using Mettler DSC-4000 system, entropy of fusion, interfacial energy, enthalpy of mixing and excess thermodynamic functions were calculated. The optical microphotographs of pure components and polyphase materials show their characteristic features.     

The effect of hydrostatic pressure on the dielectric constants, and their temperature dependences, of phosphate and tellurite glasses

Measurements of the pressure dependence of the static dielectric constant of tellurite (pure TeO₂ and 67%TeO₂ + 33%WO₃) and samarium phosphate (5%Sm₂O₃ + 95%P₂O₅ and 15%Sm₂O₃ + 85%P₂O₅) glasses at elevated pressures (0–70 kbar) for a range of temperatures (77–380 K) are reported. The electrical properties under pressure have been determined from the low-frequency complex plane analysis of glass discs contained within a Bridgman opposed anvil cell. The most notable observation is that the pressure dependence of the static dielectric constant, of all glasses studied, is positive, for example for vitreous TeO₂ ln ε/P is equal to 4.41 × 10⁻¹¹ (Pa⁻¹) at 293 K. Behaviour of this type is common to a number of materials (plastics and chalcogenide glasses) for which it is not possible to define any long-range order. It is in direct contrast with the behaviour of crystalline insulators, for which ε/P is usually negative. The effect of pressure on the dielectric constant has been analysed using two different approaches based on the macroscopic Clausius-Mossotti equation. The effects of high pressure on the dielectric constant have been correlated with the temperature dependence of the dielectric constant at atmospheric pressure.     

Effect of crystalline inclusions on the explosive crystallization of amorphous films of pure metals

The front velocity, U_f, of the explosive crystallization (EC) of amorphous films of Yb and Bi was investigated as a function of relative volume, x, of crystalline inclusions. One-phase amorphous films with thicknesses between 40 and 70 nm were obtained by vapour deposition on liquid helium-cooled substrates. Partial crystallization of amorphous films was obtained by isothermal annealing. The EC of partially crystallized films was initiated by a local current pulse. The velocity of the EC front is found to diminish with growing x. At x 0.5, the EC ceases. Experimental results are quantitatively explained by a theory based on the approximation of the ‘renormalized’ temperature effect of crystalization . Here T_Q is the ‘initial’ (at x = 0) temperature effect of crystallization (T_Q = Q/c, where Q is the crystallization heat and c is the specific heat). validity of the above approximation is discussed.     

Studies of the facetting of the polished (100) face of CaF2

The present paper deals with studies of the facetting of the polished (1 0 0) surface of CaF₂ during annealing and growth in UHV using low energy electron diffraction (LEED), atomic force microscopy (AFM), and transmission electron microscopy (TEM). First morphological modifications of the polished surfaces become visible at temperatures of T=874 K. Surfaces annealed at T=974 K exhibit a micro-roughening with pyramidal protrusions and corresponding depressions. LEED studies indicate the evolution of {1 1 1} facets. Reflexes from the (1 0 0) surface are not seen. After growth of about 660 monolayers of CaF₂ at T=1093 K and a saturation ratio S=33 from the vapor phase, larger pyramid-like or hip roof-like crystallites are developed. The results of AFM height profiles as well as of the LEED investigations indicate again the formation of {1 1 1} facets as proved by their angles of 54.7 ^o with the base (1 0 0) surface. This shows that the crystallites are homoepitaxially grown on the underlying CaF₂ substrate.     

Physical properties of amorphous Ge20Sb25−xBixSe55 thin films

The influence of substitution of Sb atoms by Bi atoms on the electrical and optical properties of thin films of the Ge₂₀Sb_25−xBi_xSe₅₅ [0x15] system are reported. Results of dc conductivity and thermoelectric power measurements between 150 and 450 K show that the Ge---Sb---Se system is chemically modified by addition of large concentrations of Bi atoms between X=5 and X=10 at.%). A transition from p-type for Sb-doped to n-type for Bi-doped films and a decrease of resistivity is observed. The absorption edge shifts to shorter wavelength, thereby decreasing the optical band gap of the system. Compositional dependences of electrical conductivity, thermoelectric power, and the appearance of n-type conduction are discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in high concentrations. The coexistence of band and hopping conduction is proposed. The ac conductivity in 0.1–10.0 kHz frequency and 150–450 K temperature range was found to obey a power law σ(ω, T) = Aω^s. The results were interpreted in terms of Elliott's theory, which assumes correlated barrier hopping (CBH) between the charged defect centres. It was found that computed results from the CBH model and experimental one are qualitative agreement for the present materials.     

Molecular orientation and dielectric anisotropy properties of 4-cyano-4′-n-heptylbiphenyl-TiO2 liquid crystal composite

The molecular orientation and the dielectric anisotropy of the nematic liquid crystal (LC) 4-cyano-4′-n-heptylbiphenyl (7CB) and of TiO₂-doped 7CB have been investigated. The dielectric properties of the LCs exhibit a relaxation peak that shifts to lower frequencies with increasing voltages. The relaxation frequencies of 7CB and 7CB/TiO₂ liquid crystals were calculated and found to decrease as the bias voltage increases. This is attributed to molecular reorientation. The dielectric anisotropy of the LCs changes from the positive type to negative type and the static electric permittivity and dielectric anisotropy values were found to be lower for the 7CB/TiO₂ system.     

Sub-Tg mechanical relaxation of a La55Al25Ni20 amorphous alloy

Dynamic mechanical properties of an amorphous La₅₅Al₂₅Ni₂₀ alloy were measured by a forced oscillation method in the temperature range from room temperature to 453 K, just below the glass transition temperature (T_g = 481 K). The internal friction at a constant frequency 62.8 rad/s of this alloy showed a peak at about 400 K and the peak position shifts with frequency. Structural relaxation reduces the magnitude of the relaxation peak but has little affect on the peak position. Using the time-temperature superposition process, master curves for storage E′ (ln ω) and loss E″ (ln ω) moduli are constructed. Activation energy of the relaxation obtained from shift factors is low, 100 kJ/mol, which is close to that for diffusion of the Al in Al and Ni in Al. The relaxation spectra are very broad with a half width of 2 3 decades.     

Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images

InP substrates and epilayers grown by MOVPE have been studied by AFM. For different misorientation angles, we observed the surface of the substrate after annealing under phosphine (PH₃) and of the epilayers under different growth conditions such as growth temperature T_g and trimethylindium (TMI) partial pressure. After annealing the terrace width corresponds to the nominal value of misorientation angle measured by X-ray diffraction. We observed different topographies and roughnesses for the grown layers corresponding to different growth modes. We propose, taking into account the roughness of the surface, a calculation of the step height and terrace width. For 2D nucleation (θ ≤ 0.2° and T_g = 500°C) and step flow mode, the roughness is low while it is increased by step bunching (θ ≥ 0.5° and T_g ≥ 580°C). Moreover we have examined the surface morphology for different misorientation angles and determined the influence of growth conditions (growth temperature, indium partial pressure) on the growth mechanism. At T_g = 580°C the increase of the TMI partial pressure in the reactor enhances the step bunching and leads to larger terraces.     

Glass-forming ability versus stability of silicate glasses. II. Theoretical demonstration

Possible relationships between measures of glass stability (GS) against devitrification on heating (evaluated by the Hrubÿ parameter K_H=(T_c^h−T_g)/(T_m−T_c^h), and the parameter K_w=(T_c^h−T_g)/T_m) and a criterion of glass-forming ability (GFA) – the critical cooling rate – were investigated by computing non-isothermal crystallization for typical values of the main quantities that control crystal nucleation and growth in silicate glasses. We limit these quantities to one thermodynamic parameter – the melting entropy (ΔS_m) and two kinetic parameters that control the viscosity (B and T₀ in the Vogel–Fulcher–Tamman equation or T_g and in Avramov’s equation). The effect of heterogeneous nucleation and, in particular, the possible role of the surface as active substrate is tested. The results presented herein demonstrate that GS and GFA are indeed related concepts.