Activation of surface hydroxyl groups by modification of H-terminated Si(111) surfaces

Chemical functionalization of semiconductor surfaces, particularly silicon oxide, has enabled many technologically important applications (e.g., sensing, photovoltaics, and catalysis). For such processes, hydroxyl groups terminating the oxide surface constitute the primary reaction sites. However, their reactivity is often poor, hindering technologically important processes, such as surface phosphonation requiring a lengthy postprocessing annealing step at 140 °C with poor control of the bonding geometry. Using a novel oxide-free surface featuring a well-defined nanopatterned OH coverage, we demonstrate that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide. On this model surface, we show that a perfectly ordered layer of monodentate phosphonic acid molecules is chemically grafted at room temperature, and explain why it remains completely stable in aqueous environments, in contrast to phosphonates grafted on silicon oxides. This fundamental understanding of chemical activity and surface stability suggests new directions to functionalize silicon for sensors, photovoltaic devices, and nanoelectronics.     

Interfacial water on Cl- and H-terminated Si(111) surfaces from first-principles calculations

The properties of interfacial water on Cl- and H-terminated Si(111) surfaces are investigated using a first-principles approach and characterized by means of energetic analysis combined with hydrogen-bond counting. The interaction of water with both substrates is found to be significantly weak, although bonding with the Cl-terminated Si(111) surface is relatively stronger because of the electrostatic contribution. According to a molecular picture for attributing the hydrophilic/hydrophobic character, both surfaces should be considered hydrophobic, at variance with the interpretation of recent ultrafast electron crystallography experiments, which seems instead to support a hydrophilic nature of the Cl-terminated Si(111) substrate.     

Self-directed growth of benzonitrile line on H-terminated Si(001) surface

Using first-principles density-functional calculations we predict a self-directed growth of benzonitrile molecular line on a H-terminated Si(001) surface. The C[triple bond]N bond of benzonitrile reacts with a single Si dangling bond which can be generated by the removal of a H atom, forming one Si-N bond and one C radical. Subsequently, the produced C radical can be stabilized by abstracting a H atom from a neighboring Si dimer, creating another H-empty site. This H-abstraction process whose activation barrier is 0.65 eV sets off a chain reaction to grow one-dimensional benzonitrile line along the Si dimer row. Our calculated energy profile for formation of the benzonitrile line shows its relatively easier formation compared with previously reported styrene and vinylferrocene lines.     

Collective vibrations in cluster models for semiconductor surfaces: vibrational spectra of acetylenyl and methylacetylenyl functionalized Si(111)

The geometries and harmonic vibrational frequencies of the acetylenyl and methylacetylenyl functionalized Si(111) surfaces are investigated using quantum chemical calculations. The vibrational spectra are computed using a previously introduced method whereby the collective vibrational modes that correspond to the vibrations of the infinite periodic system are derived from modest sized cluster models. Our predictions should be useful for the interpretation of the experimental spectra when they become available. The symmetry elements of the methylacetylenyl Si(111) surface that are derived from the space group of the optimized structure and a vibrational mode resulting from photon-adsorbate coupling are explored.     

Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

Linear and branched Fe(tpy)(2) complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.     

A first principle study of the structural,vibrational and electronic properties of tetrathiafulvalene adsorbed on Ag(110) and Au(110) surfaces

We have studied the adsorption properties of a charge donor organic molecule, tetrathiafulvalene (TTF), on the (110) surfaces of silver and gold by means of the generalized gradient approach of the density functional theory using periodic slab models. This molecule is the core building block of a host of molecular materials exhibiting extremely reach phase diagrams with a variety of ground states. The interfaces formed with metallic surfaces have received only limited attention, despite of their relevance. We have determined the stable adsorption sites for two unit cells representing high and low coverage, which are determinant for the adsorption properties of TTF on the surface. The preferential chemisorption is via the direct interaction of sulfur atoms with the Ag or Au atoms on top sites. All adsorbed TTF are more stable than gas phase TTF. The simulation of the vibrational spectra has permitted us to find the fingerprints of these structures to characterize them on this surface. The donor nature of TTF induces charge transfer to the metallic surfaces. © 2009 Wiley Periodicals, Inc. J Comput Chem, 2010     

In-situ FTIR studies on self-assembled monolayers of surfactant molecules adsorbed on H-terminated Si(111) surfaces in aqueous solutions

The adsorption of a surfactant, sodium di-2-ethylhexyl sulfosuccinate (SDES), [C4H9CH(C2H5)CH2OCO][C4H9CH(C2H5)CH2OCOCH2]CHSO3- Na+, in an aqueous solution on an atomically flat H-terminated Si(111) [abbreviated as H-Si(111)] surface with a hydrophobic property was investigated by in-situ FTIR measurements. Immersion of the H-Si(111) surface in a solution of 1.0 x 10(-2) M SDES for more than 2 h led to formation of a self-assembled monolayer (SAM) with the alkyl chains having a tendency to be assembled perpendicular to the Si surface. The in-situ FTIR observation revealed that the adsorption was nearly complete about 60 min after the start of the immersion, and after that the adsorbed molecules changed their arrangement into an ordered mode. The Si-H peak in the FTIR spectrum remained unchanged with time in aqueous surfactant solution, in contrast to the case of immersion in pure water, indicating that the adsorbed surfactant protects the H-Si(111) surface from oxidation. No structural change in the SAM was observed when a negative potential of -700 mV vs Ag/AgCl was applied to the Si, whereas the adsorbed molecules changed their arrangement, accompanied by their substantial desorption and oxidation of the Si surface, when a positive potential of +700 mV was applied.     

Covalent attachment of acetylene and methylacetylene functionality to Si(111) surfaces: scaffolds for organic surface functionalization while retaining Si-C passivation of Si(111) surface sites

Si(111) surfaces have been functionalized with Si-CC-R species, where R = H or -CH3, using a two-step reaction sequence involving chlorination of H-Si(111) followed by treatment with Na-CC-H or CH3-CC-Na reagents. The resulting surfaces showed no detectable oxidation as evidenced by X-ray photoelectron spectroscopic (XPS) data in the Si 2p region, electrochemical measurements of Si-H oxidation, or infrared spectroscopy. The Si-CC-R-terminated surfaces exhibited a characteristic CC stretch in the infrared at 2179 cm-1, which was strongly polarized perpendicular to the Si(111) surface plane. XPS measurements in the C 1s region showed a low binding energy peak indicative of Si-C bonding, with a coverage that was, within experimental error, identical to that of the CH3-terminated Si(111) surface, which has been shown to fully terminate the Si atop sites on an unreconstructed Si(111) surface. The Si-CC-H-terminated surfaces were further functionalized by exposure to n-C4H9Li followed by exposure to para Br-C6H5-CF3, allowing for introduction of para -C6H5CF3 groups while maintaining the desirable chemical and electrical properties that accompany complete Si-C termination of the atop sites on the Si(111) surface.     

DFT oligomer approach to vibrational spectra of poly(p-phenylenevinylene)

Experimental Raman and infrared spectra of poly(p-phenylenevinylene) have been analyzed on the basis of the normal coordinate calculations based on the density functional theory method at the B3LYP/cc-pVDZ level for a model oligomer. Vibrational modes corresponding to optically active modes of an infinite polymer chain have been selected from the calculated results. On the basis of these normal vibrations, the observed vibrational spectra of poly(p-phenylenevinylene) have been explained successfully. The angles between the calculated transition dipole moment vectors and the polymer axis for some infrared bands agree with those derived from observed infrared dichroic spectrum.     

In situ AFM studies on self-assembled monolayers of adsorbed surfactant molecules on well-defined H-terminated Si(111) surfaces in aqueous solutions

The formation of self-assembled monolayers (SAMs) of adsorbed cationic or anionic surfactant molecules on atomically flat H-terminated Si(111) surfaces in aqueous solutions was investigated by in situ AFM measurements, using octyl trimethylammonium chloride (C8TAC), dodecyl trimethylammonium chloride (C12TAC), octadecyl trimethylammonium chloride (C18TAC)) sodium dodecyl sulfate (STS), and sodium tetradecyl sulfate (SDS). The adsorbed surfactant layer with well-ordered molecular arrangement was formed when the Si(111) surface was in contact with 1.0x10(-4) M C18TAC, whereas a slightly roughened layer was formed for 1.0x10(-4) M C8TAC and C12TAC. On the other hand, the addition of alcohols to solutions of 1.0x10(-4) M C8TAC, C12TAC, or SDS improved the molecular arrangement in the adsorbed surfactant layer. Similarly, the addition of a salt, KCl, also improved the molecular arrangement for both the cationic and anionic surfactant layers. Moreover, the adsorbed surfactant layer with a well-ordered structure was formed in a solution of mixed cationic (C12TAC) and anionic (SDS) surfactants, though each surfactant alone did not form the well-ordered layer. These results were all explained by taking into account electrostatic repulsion between ionic head groups of adsorbed surfactant molecules as well as hydrophobic interaction between their alkyl chains, which increases with the increasing chain length, together with the increase in the hydrophobic interaction or the decrease in the electrostatic repulsion by incorporating alcohol molecules into the adsorbed surfactant layer, the decrease in the electrostatic repulsion by increasing the concentration of counterions, and the decrease in the electrostatic repulsion by alternate arrangement of cationic and anionic surfactant molecules. The present results have revealed various factors to form the well-ordered adsorbed surfactant layers on the H-Si(111) surface, which have a possibility of realizing the third generation surfaces with flexible structures and functions easily adaptable to circumstances.     

2-(diphenylphosphinylmethoxy)aniline: Synthesis,vibrational spectra,and crystal structure

The synthesis, vibrational spectra, and X-ray diffraction analysis results for 2-(diphenylphosphinylmethoxy) aniline, 2-[(C₆H₅)₂P(O)OCH₂]C₆H₄NH₂(I), are described. The crystals are monoclinic: a = 18.4515(17) Å, b = 10.5421(12) Å, c = 17.897(2) Å, β = 104.479(8)°, V = 3370.7(6) ų, Z = 8, space group P2₁/c, R = 0.0546 for 1770 reflections with I > 2σ(I). The unit cell contains two crystallographically independent molecules Ia and Ib joined by an N-H …O hydrogen bond between a hydrogen atom of the amino group of aniline in molecule Ia (Ib) and the phosphoryl oxygen atom of molecule Ib (Ia) (O…H 2.18 and 2.19 Å, N…O, 2.979(5) and 3.000(5) Å; NHO angle, 154° and 157°).     

Silicon surfaces as electron acceptors: dative bonding of amines with Si(001) and Si(111) surfaces.

The bonding of the trimethylamine (TMA) and dimethylamine (DMA) with crystalline silicon surfaces has been investigated using X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, and density-functional computational methods. XPS spectra show that TMA forms stable dative-bonded adducts on both Si(001) and Si(111) surfaces that are characterized by very high N(1s) binding energies of 402.2 eV on Si(001) and 402.4 eV on Si(111). The highly ionic nature of these adducts is further evidenced by comparison with other charge-transfer complexes and through computational chemistry studies. The ability to form these highly ionic charge-transfer complexes between TMA and silicon surfaces stems from the ability to delocalize the donated electron density between different types of chemically distinct atoms within the surface unit cells. Corresponding studies of DMA on Si(001) show only dissociative adsorption via cleavage of the N-H bond. These results show that the unique geometric structures present on silicon surfaces permit silicon atoms to act as excellent electron acceptors.     

Photoassisted adsorption of allylamine and 1-butene on H:Si(111) studied by surface vibrational spectroscopies

Ultraviolet photoassisted adsorption of terminally double-bonded molecules, allylamine (CH2=CH-CH2-NH2) and 1-butene (CH2=CH-CH2-CH3), on hydrogen-terminated silicon (111) surface was attempted to obtain adsorbates covalently terminating the surface Si atoms. The adsorption process was monitored by high-resolution electron energy loss spectroscopy, multiple internal infrared reflection-absorption spectroscopy, and Auger electron spectroscopy. Allylamine adsorbates emerged upon delivery of allylamine gas under ultraviolet irradiation. The N-H bonds in allylamine were evidenced to survive over the photoadsorption process by vibrational analysis and by the reaction with ketene. CH3- groups were detected at low coverage, indicating anchoring of the organic moieties by the secondary (sec-) type carbon atoms, which were taken over by the primary (n-) type with increasing coverage. C-D bonds were detected after deposition on deuterium-terminated Si(111) upon incorporation of Si-terminating H into the hydrocarbon part of adsorbates. In the case of 1-butene, not only the C=C end but also the CH3- end of a molecule might attach on Si, resulting in emergence of adsorbates composed of CH2 groups. The newly obtained adsorbates are prospective as a material applied for nanolithography, fine electrochemistry, and nano-biotechnology.     

From local adsorption stresses to chiral surfaces: (R,R)-tartaric acid on Ni(110).

The chiral molecule (R,R)-tartaric acid adsorbed on nickel surfaces creates highly enantioselective heterogeneous catalysts, but the nature of chiral modification remains unknown. Here, we report on the behavior of this chiral molecule with a defined Ni(110) surface. A combination of reflection absorption infrared spectroscopy, scanning tunneling microscopy, and periodic density functional theory calculations reveals a new mode of chiral induction. At room temperatures and low coverages, (R,R)-tartaric acid is adsorbed in its bitartrate form with two-point bonding to the surface via both carboxylate groups. The molecule is preferentially located above the 4-fold hollow site with each carboxylate functionality adsorbed at the short bridge site via O atoms placed above adjacent Ni atoms. However, repulsive interactions between the chiral OH groups of the molecule and the metal atoms lead to severely strained adsorption on the bulk-truncation Ni(110) surface. As a result, the most stable adsorption structure is one in which this adsorption-induced stress is alleviated by significant relaxation of surface metal atoms so that a long distance of 7.47 A between pairs of Ni atoms can be accommodated at the surface. Interestingly, this leads the bonding Ni atoms to describe a chiral footprint at the surface for which all local mirror symmetry planes are destroyed. Calculations show only one chiral footprint to be favored by the (R,R)-tartaric acid, with the mirror adsorption site being unstable by 6 kJ mol(-1). This energy difference is sufficient to enable the same local chiral reconstruction and motif to be sustained over 90% of the system, leading to an overall highly chiral metal surface.     

Inhomogeneous decomposition of ultrathin oxide films on Si(100): application of Avrami kinetics to thermal desorption spectra

Thermal decomposition of ultrathin oxide layers on silicon surface was investigated with temperature programed desorption. Oxide layers were formed on Si(100) at 400 degrees C by exposure to O(2) molecular beam. Desorption spectrum for oxygen coverages between 1.7 and 2.6 ML exhibits a single dominant peak with an additional broad peak at lower temperatures. The former peak corresponds to stable binding states of O atoms at dimer bridge sites and dimer backbond sites. The high peak intensity indicates that most O atoms are at stable states. The latter peak corresponds to an unstable binding state, where O atoms are presumably trapped at dangling bonds. The SiO desorption rate from the stable binding states is well described by Avrami kinetics, suggesting that the decomposition process is spatially inhomogeneous with void formation and growth. The rate-determining step is the reaction at void perimeter even if the overlap between voids becomes quite large. The Avrami exponents determined from our experiment indicate that the increase in the initial coverage makes the oxide layer more stable and suppresses the rate of void formation at the potential nucleation sites.     

The double salt tris(diisopropylammonium) tetrachloridoferrate(III) dichloride: Synthesis, crystal structure, and vibrational spectra

Tris(diisopropylammonium)tetrachloridoferrate(III) dichloride crystallizes in the monoclinic space group P2₁/c (a = 7.6685(2) ?, b = 17.6079(3) ?, c = 23.3217(4) ?, β = 91.396(2)°, V = 3148.1(1) ?³, Z = 4, T = 113 K) with three diisopropylammonium cations (dip), one tetrachloridoferrate(III) anion, and two chloride anions in the asymmetric unit. The dip cations and the chloride anions form hydrogen bonded one-dimensional polymers along [010]. The tetrachloridoferrate(III) anion, habituated in between these chains, is not involved in any hydrogen bonding. The structural characterization is supported by infrared and Raman spectroscopic data.     

Photochemical desorption from chlorinated Si(100) and Si(111) surfaces — Mechanisms and models

Understanding the mechanisms controlling the anisotropy of microetching is particularly critical as the scale of semiconductor devices shrink. Defining complex, dynamic chemical systems such as halogen etching require microscopic measurements combining kinetics, dynamics, surface layer composition and micromorphology on prototypical surfaces. This study is concerned with two important variables in addition to spontaneous chemical etching, the role of electronic defects induced by high level doping in producing site-specefic reaction and the enhancement of etching by irradiation at low fluences.

Substitutional defects introduced by selective doping significantly influence the rate of chlorine etching by forming shallow electronic states that are ionized at room temperature¹. We have shown that chlorine sticking coeficients as well as laser-assisted etching are significantly affected by doping at very high dopant levels. Enhancement for n-type doping is consistent with the simple assumption that holes at the surface should enhance Si-Si surface bond breaking and in disagreement with the fact that heavily p-doped silicon has a higher chlorine sticking coefficient than n-doped material².

Carrier effects generated by photoirradiation with above bandgap photons are considerably more complex than simple doping. A depletion layer and associated electric field are set up at the surface and minority carriers are preferentially swept to the surface. The type of photocarrier present at the surface is determined by both the doping and the photoirradiation.

Using photoinduced etching of heavily doped Si(100) and Si(111) by chlorine at low laser fluences, we studied the mechanism of photostimulated desorption using core-level photoemission and time-of-flight measurements of the photoproducts². These results will be interpreted in terms of field-modified electron-hole transport together with carrier-modified chlorine adsorption and desorption.     

Layer-by-layer assembly of thiol-capped au nanoparticles on a water surface and their deposition on H-terminated Si(001) by the Langmuir-Blodgett method

A monolayer of dodecanethiol-encapsulated Au nanoparticles when compressed laterally transforms into layer-by-layer assemblies on water surface. These layer-by-layer assemblies of Au nanoparticles have been deposited on H-terminated Si(001) substrates by using one down-up cycle (two strokes) in the Langmuir-Blodgett (LB) method. The transformation from monolayer to layer-by-layer assembly on a water surface is irreversible; i.e., if the compressed film is decompressed the layer-by-layer structure cannot regenerate the monolayer structure. Unlike layer-by-layer growth, only odd numbers of layers grow from the monolayer on the H-terminated Si(001) substrates by using different numbers of down-up cycles. Z-type LB deposition occurs only in the first down-up cycle of the hydrophobic substrate, whereas Y-type LB deposition takes place in the successive cycles. Such layer-by-layer assemblies of Au nanoparticles, which are made on bare silicon surfaces and where thickness can be controlled at the nanoscale level, are very promising for their novel applications in the field of nanoscience.