First observation of In(x)Ga(1-x)As quantum dots in GaP by spherical-aberration-corrected HRTEM in comparison with ADF-STEM and conventional HRTEM.

In(x)Ga(1-x)As quantum dots in GaP(100) crystals prepared by the OMVPE technique are observed along the [011] direction with a newly developed 200-kV spherical aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field (ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal field-emission gun. The dots are 6-10 nm in size and strongly strained due to the misfit of about 9% with the GaP substrate and GaP cap layer. All of the cross-sectional high-resolution electron micrographs show dumbbell images of Ga and P atomic columns separated by 0.136 nm in well-oriented and perfect GaP areas, but the interpretable images are limited to those taken with the Cs-corrected HRTEM and ADF-STEM with Fourier filtering of the images. The Cs-corrected HRTEM and ADF-STEM are comparable from the viewpoint of interpretable resolution. A detailed comparison between the Cs-corrected HRTEM images and the simulated ones with electron incidence tilted by 1 degree to 5 degrees from the [011] zone axis gives information on local lattice bending in the dots from the images around 0.1 nm resolution. This becomes one of the useful techniques newly available from electron microscopy with sub-angstrom resolution.     

Improved focused ion beam target preparation of (S)TEM specimen--a method for obtaining ultrathin lamellae

Specimen quality is vital to (scanning) transmission electron microscopy (TEM) investigations. In particular, thin specimens are required to obtain excellent high-resolution TEM images. Conventional focused ion beam (FIB) preparation methods cannot be employed to reliably create high quality specimens much thinner than 20 nm. We have developed a method for in situ target preparation of ultrathin TEM lamellae by FIB milling. With this method we are able to routinely obtain large area lamellae with coplanar faces, thinner than 10 nm. The resulting specimens are suitable for low kV TEM as well as scanning TEM. We have demonstrated atomic resolution by Cs-corrected high-resolution TEM at 20 kV on a FIB milled Si specimen only 4 nm thick; its amorphous layer measuring less than 1 nm in total.     

Activation of ultrathin oxide films for chemical reaction by interface defects

Periodic density functional theory calculations revealed strong enhancement of chemical reactivity by defects located at the oxide-metal interface for water dissociation on ultrathin MgO films deposited on Ag(100) substrate. Accumulation of charge density at the oxide-metal interface due to irregular interface defects influences the chemical reactivity of MgO films by changing the charge distribution at the oxide surface. Our results reveal the importance of buried interface defects in controlling chemical reactions on an ultrathin oxide film supported by a metal substrate.     

A Generalized Strategy for the Synthesis of Large-Size Ultrathin Two-Dimensional Metal Oxide Nanosheets

Two-dimensional (2D) nanomaterials show unique electrical, mechanical, and catalytic performance owing to their ultrahigh surface-to-volume ratio and quantum confinement effects. However, ways to simply synthesize 2D metal oxide nanosheets through a general and facile method is still a big challenge. Herein, we report a generalized and facile strategy to synthesize large-size ultrathin 2D metal oxide nanosheets by using graphene oxide (GO) as a template in a wet-chemical system. Notably, the novel strategy mainly relies on accurately controlling the balance between heterogeneous growth and nucleation of metal oxides on the surface of GO, which is independent on the individual character of the metal elements. Therefore, ultrathin nanosheets of various metal oxides, including those from both main-group and transition elements, can be synthesized with large size. The ultrathin 2D metal oxide nanosheets also show controllable thickness and unique surface chemical state.     

Ligand field effect at oxide-metal interface on the chemical reactivity of ultrathin oxide film surface

Ultrathin oxide film is currently one of the paramount candidates for a heterogeneous catalyst because it provides an additional dimension, i.e., film thickness, to control chemical reactivity. Here, we demonstrate that the chemical reactivity of ultrathin MgO film grown on Ag(100) substrate for the dissociation of individual water molecules can be systematically controlled by interface dopants over the film thickness. Density functional theory calculations revealed that adhesion at the oxide-metal interface can be addressed by the ligand field effect and is linearly correlated with the chemical reactivity of the oxide film. In addition, our results indicate that the concentration of dopant at the interface can be controlled by tuning the drawing effect of oxide film. Our study provides not only profound insight into chemical reactivity control of ultrathin oxide film supported by a metal substrate but also an impetus for investigating ultrathin oxide films for a wider range of applications.     

A Generalized Strategy for the Synthesis of Large‐Size Ultrathin Two‐Dimensional Metal Oxide Nanosheets

Two‐dimensional (2D) nanomaterials show unique electrical, mechanical, and catalytic performance owing to their ultrahigh surface‐to‐volume ratio and quantum confinement effects. However, ways to simply synthesize 2D metal oxide nanosheets through a general and facile method is still a big challenge. Herein, we report a generalized and facile strategy to synthesize large‐size ultrathin 2D metal oxide nanosheets by using graphene oxide (GO) as a template in a wet‐chemical system. Notably, the novel strategy mainly relies on accurately controlling the balance between heterogeneous growth and nucleation of metal oxides on the surface of GO, which is independent on the individual character of the metal elements. Therefore, ultrathin nanosheets of various metal oxides, including those from both main‐group and transition elements, can be synthesized with large size. The ultrathin 2D metal oxide nanosheets also show controllable thickness and unique surface chemical state.     

Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si

The thicknesses of intermediate oxides at the interface between ultrathin SiO₂ and Si substrates have been measured via XPS elemental quantitative analysis for some SiO₂/Si(100) and SiO₂/Si(111) samples with the silicon oxide thickness less than 2 nm. The measurements involve XPS determination of the Si relative atomic ratio, calculation of Si atomic densities for the intermediate oxide, etc. and then the intermediate oxide thicknesses and the number of monolayers are obtained by referencing the thickness data from two international comparisons for these samples. The results show that the thickness of the intermediate oxides is in the range 0.14–0.16 nm with an average value of 0.15 nm. The number of monolayers for the intermediate oxides at the interface is less than one monolayer with an average value of 0.60. In the present work, there are a series of approximations. By making these approximations many parameters, including L and R₀, used in the conventional calculation method are removed to give a simpler equation, which is valid when the thicknesses of SiO₂ overlayer and the intermediate oxides are very small. This, therefore, appears to be a simple and quick method to obtain approximate oxide thicknesses of modest accuracy. The present work does not in any way replace or improve on Eqns ( 2 –6) cited in the text. Copyright © 2010 John Wiley & Sons, Ltd.     

Vanadium oxide surface studies

The vanadium oxides can exist in a range of single and mixed valencies with a large variety of structures. The large diversity of physical and chemical properties that they can thus possess make them technologically important and a rich ground for basic research. Here we assess the present status of the microscopic understanding of the physico-chemical properties of vanadium oxide surfaces. The discussion is restricted to atomically well-defined systems as probed by surface techniques. Following a brief review of the properties of the bulk oxides the electronic and geometric structure of their clean single crystal surfaces and adsorption studies, probing their chemical reactivity, are considered. The review then focuses on the growth and the surface properties of vanadium oxide thin films. This is partitioned into films grown on oxide substrates and those on metal substrates. The interest in the former derives from their importance as supported metal oxide catalysts and the need to understand the two-dimensional overlayer of the so-called “monolayer” catalyst. On the single crystal metal substrates thin oxide layers with high structural order and interesting properties can be prepared. Particular attention is given to ultrathin vanadium oxide layers, so-called nano-layers, where novel phases, stabilised by the substrate, form.     

Microstructural Exploration of the High Capacitance in RuO_2-ZrO_2 Coating

A high capacitance RuO₂-ZrO₂ coating was prepared by thermal decomposition method.Extended X-ray absorption fine structure(EXAFS),X-ray diffraction(XRD),high-resolution transmission electron microscope(HRTEM)and ab initio calculations were applied to understand the role of the microstructure in the acquisition of high specific capacitance of RuO₂-based oxides.The results show that the RuO₂-ZrO₂ oxide prepared at critical crystallization temperature can be considered to be quasi-amorphous or microcrystalline(A short-range ordered crystal structure can be seen from the TEM image,but no diffraction peaks can be seen from the XRD diffraction patterns).And this RuO₂-ZrO₂ was identified as a solid solution with high solid solubility.It referred to herein as a quasi-amorphous solid solution.Such a special microstructure was conducive for"synergistic catalysis"owing to the cationic interaction and thus could gain high"active site density"and high"active surface",thus developing high specific capacitance.     

Tuning the Reactivity of Ultrathin Oxides: NO Adsorption on Monolayer FeO(111)

Ultrathin metal oxides exhibit unique chemical properties and show promise for applications in heterogeneous catalysis. Monolayer FeO films supported on metal surfaces show large differences in reactivity depending on the metal substrate, potentially enabling tuning of the catalytic properties of these materials. Nitric oxide (NO) adsorption is facile on silver‐supported FeO, whereas a similar film grown on platinum is inert to NO under similar conditions. Ab initio calculations link this substrate‐dependent behavior to steric hindrance caused by substrate‐induced rumpling of the FeO surface, which is stronger for the platinum‐supported film. Calculations show that the size of the activation barrier to adsorption caused by the rumpling is dictated by the strength of the metal–oxide interaction, offering a straightforward method for tailoring the adsorption properties of ultrathin films.     

Stimuli-responsive properties of N-isopropylacrylamide-based ultrathin hydrogel films prepared by photo-cross-linking

To develop stimuli-responsive ultrathin polymer films on a solid substrate, a novel photo-cross-linkable polymer with both temperature- and pH-responsive properties was prepared. The photoreactive 4-aminobenzophenone (BP) was introduced onto the side groups of poly(N-isopropylaclylamide-co-2-carboxyisopropylaclylamide) [poly(NIPAAm-co-CIPAAm)]. This copolymer was designed for highly random sequences of comonomers. After the formation of spin-coated polymer films on a solid substrate, UV-light irradiation started the cross-linking reaction. The spin-coating processes and stability of the polymer films were quantitatively monitored by a quartz crystal microbalance (QCM), and the thickness was estimated using an atomic force microscope (AFM). These measurements confirmed the formation of a very plain polymer film, and the film thickness was precisely controlled by the concentration of the polymer solution used for spin coating. Moreover, the obtained films showed a high stability due to the cross-liking reaction and UV irradiation. Cyclic voltammetry using potassium ferricyanide revealed that the ions could permeate the photo-cross-linked ultrathin polymer films. The permeability of the ultrathin hydrogel films was dramatically changed by varying the pH and temperature of the aqueous media. These observations suggest that the preparation of isopropylacrylamide-based stimuli-responsive ultrathin hydrogel films is possible.     

Ultrathin silica films immobilized on gold supports: fabrication, characterization, and modification

A novel method for covalent attachment of ultrathin silica films (thickness <10 nm) to gold substrates is reported. Silica layers were prepared using spin-coating of sol-gel precursor solutions onto gold substrates that were cleaned and oxidized using UV photo-oxidation in an ozone atmosphere. The gold oxide layer resulting from this process acts as a wetting control and adhesive agent for the ultrathin silica layer. Control of silica layer thickness between approximately 6 and 60 nm through modification of precursor solution composition or by repetitive deposition is demonstrated. Films were characterized using infrared spectroscopy, ellipsometry, atomic force microscopy, and cyclic voltammetry. For the standard deposition parameters developed here, films were determined to be 5.5 +/- 0.75 nm thick, and were stable in aqueous solutions ranging in pH from 2 to 10 for at least 30 min. Films contained nanoscopic defects with radii of 相似文献   

Patterning of triblock copolymer film and its application for surface-enhanced Raman scattering

In this paper,microphase behavior of an ABC triblock copolymer,polystyrene-block-poly(2-vinylpyridine)-block-poly(ethylene oxide),namely PS-b-P2VP-b-PEO,was systematically studied during spin-coating and solvent vapor annealing based on various parameters,including the types of the solvent,spin speed and thickness.The morphological features and the microdomain location of the different blocks were characterized by atomic force microscope (AFM) and high resolution transmission electron microscopy (HRTEM).With increasing thickness,the order-order transition from nanopores array to the pattern of nanostripes was observed due to microdomain coarsening.These processes of pattern transformation were based on the selectivity of toluene for different blocks and on the contact time between solvent molecules and the three blocks.This work provides different templates for preparation of gold nanoparticle array on silicon wafer,which can be adopted as an active surface-enhanced Raman scattering (SERS) substrate for poly(3-hexylthiophene) (P3HT).     

Direct observation of rare-earth ions in α-sialon:Ce phosphors

Doping structures of Ce(3+) into the refractory α-sialon crystal lattice have been examined via an atom-resolved Cs-corrected scanning transmission electron microscope. The location and coordination of the rare-earth ions are well-defined through direct observation in conjunction with structural modeling and image simulation. The stability and solubility of Ce(3+) ions could be remarkably enhanced via congregation into the planar defects formed by a 1/3 (210)-type lattice displacement along with an inversion operation. The formation of cylindrical chambers near the defects is believed to provide effective structural relaxation upon doping of large rare-earth ions into the interstices in their neighborhoods. The as-revealed structural information could be useful for understanding the luminescence properties of the promising rare-earth doped sialon materials.     

Two-dimensional oxides: multifunctional materials for advanced technologies

The last decade has seen spectacular progress in the design, preparation, and characterization down to the atomic scale of oxide ultrathin films of few nanometers thickness grown on a different material. This has paved the way towards several sophisticated applications in advanced technologies. By playing around with the low-dimensionality of the oxide layer, which sometimes leads to truly two-dimensional systems, one can exploit new properties and functionalities that are not present in the corresponding bulk materials or thick films. In this review we provide some clues about the most recent advances in the design of these systems based on modern electronic structure theory and on their preparation and characterization with specifically developed growth techniques and analytical methods. We show how two-dimensional oxides can be used in mature technologies by providing added value to existing materials, or in new technologies based on completely new paradigms. The fields in which two-dimensional oxides are used are classified based on the properties that are exploited, chemical or physical. With respect to chemical properties we discuss use of oxide ultrathin films in catalysis, solid oxide fuel cells, gas sensors, corrosion protection, and biocompatible materials; regarding the physical properties we discuss metal-oxide field effect transistors and memristors, spintronic devices, ferroelectrics and thermoelectrics, and solar energy materials.     

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters Si_xN^? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO₂/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using ¹⁸O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.     

Surface structural evolution in iron oxide thin films

Ordered iron oxide ultrathin films were fabricated on a single-crystal Mo(110) substrate under ultrahigh vacuum conditions by either depositing Fe in ambient oxygen or oxidizing preprepared Fe(110) films. The surface structure and electronic structure of the iron oxide films were investigated by various surface analytical techniques. The results indicate surface structural transformations from metastable FeO(111) and O-terminated Fe(2)O(3)(0001) to Fe(3)O(4)(111) films, respectively. The former depends strongly on the oxygen pressure and substrate temperature, and the latter relies mostly upon the annealing temperature. Our experimental observations are helpful in understanding the mechanisms of surface structural evolution in iron oxides. The model surfaces of Fe-oxide films, particularly O-terminated surfaces, can be used for further investigation in chemical reactions (e.g., in catalysis).     

原硅酸镉纳米线的合成与表征

硅酸盐因其基本结构单元[SiO4]四面体可通过共用顶点连接成各种结构形式,易形成具有大比表面积的多孔结构,且具有良好的热稳定性和化学稳定性,目前已广泛用于选择性催化、分子筛、气体的吸附与分离等领域．另外,硅酸盐还是一类优良的发光材料基质．如Mn^2 或其它稀土离子激活的Zn2SiO4、Mg2SiO4和CdSiO3等．由于原料来源广泛和价格低廉．硅酸盐的研究已引起人们的关注．     

多孔质铝阳极氧化膜表面与界面研究

铝质材料阳极氧化作为铝质材料最重要的表面改性技术已有几十年历程，并在现代工业中获得了广泛应用［1，’］．前人对铝阳极氧化股的结构、组成及生成机理等进行了大量的研究工作［3－6］，研究结果表明铝阳极氧化膜具有多孔型和壁垒型二种，其中多孔型铝阳极氧化膜是由非晶态