PtMn层厚度对NiFe/PtMn双层膜交换偏置形成及热稳定性的影响

采用磁控溅射的方法制备了一组以(Ni_0.81Fe_0.19)_1-xCr_x作为缓冲层的NiFe/PtMn双层膜样品，研究了NiFe/PtMn双层膜的形成过程和热稳定性.实验表明，Cr成分的不同会引起NiFe/PtMn双层膜中PtMn层晶粒尺寸的不同，使NiFe/PtMn双层膜的交换偏置场与PtMn层厚度之间呈现不同的变化关系.热稳定性实验表明，PtMn晶粒尺寸较大的样品，出现交换偏置现象所需要的临界厚度较小，热稳定性好，这与Mauri的理论模型一致. 关键词： NiFe/PtMn双层膜 交换偏置场 热稳定性     

(Ni0.81Fe0.19)1-xCrx作为种子层对NiFe/FeMn交换偏置的影响

采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进 关键词： 交换偏置 晶粒尺寸 织构 种子层     

Ta,Ta/Cu缓冲层对NiFe/Fe Mn双层膜交换偏置场的影响

采用磁控溅射方法制备了分别以Ta和Ta/Cu作为缓冲层的一系列NiFe/FeMn双层膜.实验发现,以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Ta/Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大.测量了这两种双层膜的织构、表面粗糙度和表面成分.结果表明,以Ta/Cu为缓冲层时,Cu在NiFe层的上表面偏聚是造成NiFe/FeMn双层膜交换偏置场降低的重要原因. 关键词： NiFe/FeMn 交换偏置场 织构 表面粗糙度     

NiFe/FeMn双层膜交换偏置的形成及热稳定性研究

研究了在铁磁(NiFe)/反铁磁(FeMn)双层膜之间，交换偏置的形成过程和热稳定性，特别是NiFe/FeMn的交换偏置作用与FeMn层晶粒尺寸的关系.和以前作者不同的是，本文方法采用非磁性Ni-Fe-Cr合金作缓冲层材料，改变Cr的含量就可以获得不同晶粒尺寸的反铁磁FeMn层.实验表明，晶粒尺寸较小的FeMn产生较强的铁磁/反铁磁交换偏置场；但是，对于较大晶粒的FeMn层，出现交换偏置作用所要的临界厚度较小.这符合Mauri提出的理论模型.交换偏置场的热稳定性实验表明，具有较大晶粒尺寸的FeMn层给出较 关键词： 交换偏置 热稳定性 反铁磁 晶粒尺寸     

BiFeO3/Ni81Fe19磁性双层膜中的交换偏置及其热稳定性研究

研究了磁场诱导生长的BiFeO₃/Ni₁₈Fe₁₉磁性双层膜中 的交换偏置及其热稳定性. 结果表明: BiFeO₃/Ni₁₈Fe₁₉双层膜中的交换偏置场H_ex未表现出明显的磁练习效应. 在负饱和磁场等待过程中, BiFeO₃/Ni₁₈Fe₁₉双层膜磁滞回线的前支和后支曲 线都随着在负饱和磁场中等待时间t_sat的增加向正场方向偏移. 交换偏置场H_ex的大小随着等待时间t_sat的增加而减小, 矫顽力H_c基本不变. 交换偏置场H_ex的大小随测量温度T_m的升高变化不明显, 表现出良好的热稳定性; 但矫顽力H_c随T_m的升高而显著减小. 良好的热稳定性应该来源于铁电性和反铁磁性间的共同耦合作用. 关键词： 多铁性 磁性薄膜 交换偏置 热稳定性     

分子束外延生长Fe/Fe50Mn50双层膜的交换偏置

利用表面磁光克尔效应和铁磁共振对分子束外延生长的Fe/Fe₅₀Mn₅₀双层膜的交换偏置场和矫顽力进行了研究,实验结果表明,当反铁磁层厚度小于55nm时 ,不出现交换偏置,而当大于这一厚度时,出现交换偏置;大约在7nm时,达到极大值.随着 反铁磁层厚度的继续增大,偏置场和矫顽力随Fe₅₀Mn₅₀膜厚的增大 而下降.铁磁共振实验结果表明样品的磁性存在单向各向异性.并对上述结果进行了讨论. 关键词： 分子束外延 50Mn₅₀')" href="#">Fe/Fe₅₀Mn₅₀ 双层膜 交换偏置     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

NiFe/FeMn双层膜的交换耦合

采用平面霍尔效应测量方法，对NiFe/FeMn双层膜的交换耦合进行了研究. 结果表明，在NiFe/FeMn体系中不存在spin-flop模型给出的单轴各向异性场. 而导致交换耦合场可逆与不可逆测量结果之间较大差异的原因是反铁磁颗粒的不稳定性或铁磁层的分畴现象. 关键词： 反铁磁/铁磁双层膜 交换偏置场 可逆与不可逆测量     

Ni81Fe19/Cr82Al18双层膜中的交换偏置

研究了直流磁控溅射法制备的Ni₈₁Fe₁₉/Cr₈₂Al₁₈双层膜中的交换耦合.样品的室温矫顽力与1/t^{3/2_FM(t_FM为铁磁层厚度）近似成正比例关系,从而表明在Ni₈₁Fe₁₉/Cr₈₂Al₁₈中交换耦合为铁磁/反铁磁界面的随机相互作用.另外还讨论了反铁磁层厚度对交换偏置的影响. 关键词：}     

Co/Co3O4/PZT多铁复合薄膜的交换偏置效应及其磁电耦合特性

本文采用溶胶-凝胶工艺并结合脉冲激光沉积技术, 在Pt/Ti/SiO₂/Si衬底上制备了Co/Co₃O₄/PZT多铁复合薄膜. 对复合薄膜的微结构和组分进行了表征, 并系统研究了复合薄膜中的交换偏置效应及其对磁电耦合作用的影响. 研究结果表明, 复合薄膜在77 K具有明显的交换偏置效应, 交换偏置场达到80 Oe, 且交换偏置场及矫顽场均随温度降低而增大. 当温度降低到10 K时, 交换偏置场增至160 Oe. X射线光电子能谱(XPS)测试结果证实在Co和Co₃O₄界面处存在约5 nm厚的CoO层, 表明77 K下的交换偏置效应源自反铁磁的CoO层对Co的钉扎作用. 观察到复合薄膜的电容-温度曲线随着外加磁场大小和方向的改变而呈现出规律性的变化, 表明复合薄膜存在磁电耦合效应. 进一步研究发现, 在低温下复合薄膜呈现出各向异性的磁电容效应, 与磁场大小和方向密切相关. 复合薄膜的这种磁电耦合特性主要与复合体系的交换偏置效应及基于界面应力传递的磁电耦合作用有关, 本文对其中的物理机理进行了详细讨论与分析.     

Magnetic annealing of the ion-beam sputtered IrMn/CoFeB bilayers – positive exchange bias and coercivity behaviour

The effect of optimum dilution of antiferromagnetic (AF)/ferromagnetic (FM) interface necessary for observance of positive exchange bias in ion-beam sputtered Si/Ir₂₂Mn₇₈ (t _AF = 12, 18, 24 nm)/Co₂₀Fe₆₀B₂₀(t _FM = 6,9,15 nm) exchange coupled bilayers is investigated by magnetic annealing at 380, 420 and 460 °C for 1 h at 5 × 10^-6 Torr in presence of 500 Oe magnetic field. While the coercivity of the exchange coupled FM layer decreases with the increase in annealing temperature irrespective of the value of t _AF or t _FM, the hysteresis loops however shift by ≈+ 10 Oe whenever the coercivity drops in the 10–15 Oe range. This is consistent with the phase diagram of exchange bias field and coercivity derived from Meiklejohn and Bean model. The X-ray diffraction and X-ray reflectivity measurements confirmed that the texture, grain size and interface roughness of IrMn/CoFeB bilayers are thickness dependent and are correlated to the observed magnetic response of the bilayers. The results establish that optimum dilution of the IrMn/CoFeB interface by thermally diffused Mn-spins is necessary in inducing the effective coupling between the IrMn domains and diluted CoFeB layer. It is further shown that the annealing temperature required for the optimum dilution of the CoFeB interface critically depends on the thickness of the layers.     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

Annealing effect of NiO/Co90Fe10 thin films: From bilayer to nanocomposite

Exchange-biased bilayers are widely used in the pinned layers of spintronic devices. While magnetic field annealing (MFA) was routinely engaged during the fabrication of these devices, the annealing effect of NiO/CoFe bilayers is not yet reported. In this paper, the transition from NiO/Co₉₀Fe₁₀ bilayer to nanocomposite single layer was observed through rapid thermal annealing at different temperatures under magnetic field. The as-deposited and low-temperature (<623 K) annealed samples had rock salt (NiO) and face center cubic (Co₉₀Fe₁₀) structures. On the other hand, annealing at 623 K and 673 K resulted in nanocomposite single layers composed of oxides (matrix) and alloys (precipitate), due to grain boundary oxidization and strong interdiffusion in the NiO/CoFe and CoFe/SiO₂ interfaces. The structural transition was accompanied by the reduction of grain sizes, re-ordering of crystallites, incensement of roughness, and reduction of Ni²⁺. When measured at room temperature, the bilayers exhibited soft magnetism with small room-temperature coercivity. The nanocomposite layers exhibited an enhanced coercivity due to the changes in the magnetization reversal mechanism by pinning from the oxides. At 10 K, the increased antiferromagnetic anisotropy in the NiO resulted in enhanced coercivity and exchange bias in the bilayers. The nanocomposites exhibited weaker exchange bias compared with the bilayers due to frustrated interfacial spins. This investigation on how the magnetic properties of exchange-biased bilayers are influenced by magnetic RTA provides insights into controlling the magnetization reversal properties of thin films.     

Temperature dependent exchange bias effect in polycrystalline BiFeO3/FM (FM = NiFe, Co) bilayers

Extensive studies on the temperature (T) dependent exchange bias effect were carried out in polycrystalline BiFeO₃(BFO)/NiFe and BFO/Co bilayers. In contrast to single-crystalline BFO/ferromagnet (FM) bilayers, sharp increase of the exchange bias field (H _E ) below 50 K were clearly observed in both of these two bilayers. However, when T is higher than 50 K, H _E increases with T and decreases further when T is larger than 230 K (for BFO/NiFe) or 200 K (for BFO/Co), which is similar to those reported in single-crystalline BFO/FM bilayers. After the exploration of magnetic field cooling, the temperature dependent exchange bias can be explained considering two contributions from both the interfacial spin-glass-like frustrated spins and the polycrystalline grains in the BFO layer. Moreover, obvious exchange bias training effect can be observed at both 5 K and room temperature and the corresponding results can be well fitted based on a recently proposed theoretical model taking into account the energy dissipation of the AFM layer.     

Multiple antiferromagnet/ferromagnet interfaces as a probe of grain-size-dependent exchange bias in polycrystalline Co/Fe50Mn50

We have used ferromagnet/antiferromagnet/ferromagnet trilayers and ferromagnet/antiferromagnet multilayers to probe the grain size dependence of exchange bias in polycrystalline Co/Fe₅₀Mn₅₀. X-ray diffraction and transmission electron microscopy show that the Fe₅₀Mn₅₀ (FeMn) grain size increases with increasing FeMn thickness in the Co (30 Å)/FeMn system. Hence, in Co(30 Å)/FeMn(t_AF Å)/Co(30 Å) trilayers the two Co layers sample different FeMn grain sizes at the two antiferromagnet/ferromagnet interfaces. For FeMn thicknesses above 100 Å, where simple bilayers have a thickness-independent exchange bias, we are therefore able to deduce the influence of FeMn grain size on the exchange bias and coercivity (and their temperature dependence) simply by measuring trilayer and multilayer samples with varying FeMn thicknesses. This can be done while maintaining the (1 1 1) orientation, and with little variation in interface roughness. Increasing the average grain size from 90 to 135 Å results in a fourfold decrease in exchange bias, following an inverse grain size dependence. We interpret the results as being due to a decrease in uncompensated spin density with increasing antiferromagnet grain size, further evidence for the importance of defect-generated uncompensated spins.     

Exchange bias like effect induced by domain walls in FeGd/FeSn bilayers

A study of exchange bias phenomenon in ferrimagnetic /ferromagnetic FeGd/ FeSn bilayers is presented. The amorphous FeSn and FeGd alloys have been grown by co-evaporation. Specific growth conditions allow to induce an uniaxial anisotropy in both alloys in a parallel direction. After saturation of the bilayers under a positive field, the hysteresis loop of one of the layer is shifted towards a positive field H _E . The sign of the exchange bias field H _E is shown to be due to the antiferromagnetic coupling between the net magnetizations of both alloys. The field H _E is studied as a function of the thickness of each layer and of the temperature. Using ac-susceptibility measurements and polarized neutron reflectometry, it is shown that the reversal of magnetization of the bilayers is dominated by the presence of a domain wall at the interface. This exchange bias system is shown to act as a potential well for the magnetic domain wall. Within this assumption and thanks to a precise magnetic characterization of each alloy, the evolution of H _E with the thickness of the layers is well reproduced using simple one-dimensional analytical models for the domain wall or a more elaborate numerical approach.Received: 20 February 2003, Published online: 9 September 2003PACS: 75.60.Ch Domain walls and domain structure - 75.70.-i Magnetic properties of thin films, surfaces, and interfaces - 75.25.+z Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.)     

Exchange bias and training effect in Ni/Ag-doped NiO bilayers

A series of polycrystalline Ag-doped Ni_1−xAg_xO/Ni bilayers with x up to 0.2 were prepared by magnetron sputtering. X-ray diffraction, atomic force microscopy and transmission electron microscopy analyses reveal that Ag doping significantly reduces the mean NiO grain size and leads to the appearance of Ag nanoparticles on the surface of the Ag-doped NiO films. As x increases, the exchange bias field and coercivity at room temperature decrease as a consequence of the reduced thermal stability of smaller NiO grains and the screening effect resulting from the interfacial Ag nanoparticles. At lower temperatures, a slight enhancement of the exchange bias field is observed in the Ag-doped sample, indicating that the Ag doping increases the uncompensated NiO spin density. In addition, our studies find that the training effect of the Ag-doped sample can be well described by a spin configurational relaxation model, regardless of the presence of Ag nanopartiles at the interface.     

The effects of Co-metal clusters on exchange bias for Co-doped NiO/FeNi bilayers

Co-doped NiO inhomogeneous films were synthesized by sputtering metallic Co chips and NiO together and the exchange bias of bilayers Co-doped NiO/FeNi was investigated. When Co content was up to 25.2%, the exchange bias field H_E at the room temperature increased to the maximum which was about three times compared to the undoped-bilayers. With further increase of Co content, the exchange bias field H_E and blocking temperature T_B decreased. Analysis suggests that the configuration of nanometer-sized Co-metal clusters enchased into NiO matrix played an important role in the change of magnetic behavior for the bilayers.     

交换偏置双层膜中的反铁磁自旋结构及其交换各向异性

研究了交换偏置双层膜中界面存在二次以及双二次交换耦合下反铁磁磁矩转动及其交换各向异性.结果表明，其反铁磁膜中的磁矩转动存在可逆“恢复行为”、不可逆“半转动行为”、不可逆“倒转行为”以及不可逆“半倒转行为”四种情形，四种情形的出现强烈地依赖于界面二次、双二次耦合以及反铁磁膜厚度.其中可逆恢复行为情况下，系统出现交换偏置，而不可逆的半转、半倒转以及倒转情形，系统不出现交换偏置.特别地,在界面处仅存在双二次耦合的情形下，其界面双二次耦合常数J₂≤0.1 σ关键词： 反铁磁自旋结构 交换各向异性 界面双二次耦合 交换偏置