Nuclear hyperfine structure in the XΣ state of ZrC

Electronic band systems of zirconium monocarbide, ZrC, in the 16 000-19 000 cm⁻¹ region have been observed following the reaction of laser-ablated Zr atoms with methane under supersonic free-jet conditions. Rotational analyses of high-resolution spectra have shown that the ground state of ZrC is a ³Σ state, with r₀=1.8066 Å and an unexpectedly small spin-spin parameter, λ=0.5139 cm⁻¹. The spectra are dense because of the five naturally occurring isotopes of Zr. Four of these, with mass numbers 90, 92, 94, and 96, have I=0, but the fifth, ⁹¹Zr, present in 11.22% abundance, has I=5/2. Lines of ⁹¹ZrC can be assigned in some of the strongest bands, and are found to display sizeable hyperfine splittings, with widths of up to 0.2 cm⁻¹. Analysis shows that the largest hyperfine effects are in the ground state, where b=−0.03133±0.00015 cm⁻¹ and c=−0.00123±0.00037 cm⁻¹ (3σ error limits). The large Fermi contact parameter, b, indicates that an unpaired Zr 5sσ electron is present, which, taken together with the small value of λ, means that the ground state must be a ³Σ⁺ state, from the electron configuration (Zr 5sσ)¹ (C 2pσ)¹. Internal hyperfine perturbations occur between the F₁ and F₃ electron spin components of the ground state in the range N=2-4, producing extra lines in some of the branches; the perturbations are of the type ΔN=0, ΔJ=±2, and are a second-order effect arising because the F₁ (J=N+1) and F₃ (J=N−1) spin components both interact with the F₂ (J=N) component through ΔN=0, ΔJ=±1 matrix elements of the Fermi contact operator. Second-order perturbations of this type can only occur in states that are very close to case (b) coupling.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

Influence of Yb concentration on upconversion luminescence of Ho

Upconversion (UC) emissions at 360 ((⁵F, ³F, ⁵G)₂ → ⁵I₈), 392 (³K₇/⁵G₄ → ⁵I₈), 428 (⁵G₅ → ⁵I₈), 554 (⁵S₂/⁵F₄ → ⁵I₈), 667 (⁵F₅ → ⁵I₈) and 754 (⁵S₂/⁵F₄ → ⁵I₇) nm were obtained in 0.1 mol% Ho³⁺/x mol% Yb³⁺:Y₂O₃ (x = 2, 5, 8, 11, 15) bulk ceramics under infrared (IR) excitation at 976 nm. The intensity of the UC luminescence centered at 554 and 754 nm increased with Yb³⁺ concentration from 2 to 5 mol% and decreased from 5 to 15 mol%, while the UC luminescence centered at 392, 428 and 667 nm increased with Yb³⁺ concentration from 2 to 11 mol%, then started to reduce with Yb³⁺ concentration until 15 mol%. This comes from the competition between the energy back transfer (EBT) process [⁵S₂/⁵F₄(Ho) + ²F_7/2(Yb) → ⁵I₆(Ho) + ²F_5/2(Yb) as well as ⁵F₅(Ho) + ²F_7/2(Yb) → ⁵I₇(Ho) + ²F_5/2(Yb)] and spontaneous radiation process. The intensity of the UC luminescence centered at 360 nm always increases with Yb³⁺ concentration from 2 to 15 mol%. We believe that it may come from the cooperation of energy transfer process from Yb³⁺ ions in the ²F_5/2 state and the cross energy transfer process ⁵S₂/⁵F₄ + ⁵I₆ → (⁵F, ³F, ⁵G)₂ + ⁵I₈.     

Rare earth-transition metal compound-based MOSLM for the visible spectral range

We have demonstrated a magneto-optical spatial light modulator in which functionality is realized by (i) heating up to Curie temperature (T_c) magneto-optical elements (pixels) with a semiconductor laser and (ii) application of a switching magnetic field. The pixels were made of films of amorphous rare earth-transition metal compounds (TbFe films with T_c=403 K and DyFe films with T_c=343 K) having good magneto-optical responses for wavelengths from the visible spectral range. We have found that the magnetization direction of pixels can be modulated with a laser radiation density of 5 mJ/cm² and in a switching magnetic field of 15 Oe.     

Effect of pressure and magnetic field on bilayer La1.25Sr1.75Mn2O7 single crystal

We report the temperature dependence of susceptibility for various pressures, magnetic fields and constant magnetic field of 5 T with various pressures on La_2−2xSr_1+2xMn₂O₇ single crystal to understand the effectiveness of pressure and magnetic field in altering the magnetic properties. We find that the Curie temperature, T_c, increases under pressure (dT_c/dP=10.9 K/GPa) and it indicates the enhancement of ferromagnetic phase under pressure up to 2 GPa. The magnetic field dependence of T_c is about 26 K for 3 T. The combined effect of pressure and constant magnetic field (5 T) shows dT_c/dP=11.3 K/GPa and the peak structure is suppressed and broadened. The application of magnetic field of 5 T realizes 3D spin ordered state below T_c at atmospheric pressure. Both peak structure in χ_c and 3D spin ordered state are suppressed, and changes to 2D-like spin ordered state by increase of pressure. These results reveal that the pressure and the magnetic field are more competitive in altering the magnetic properties of bilayer manganite La_1.25Sr_1.75Mn₂O₇ single crystal.     

Magnetic dipolar interaction in ultrathin films: Structural and size effects

A previously introduced formalism for calculating magnetic dipolar anisotropy energy ΔU in atomic layered structures is further developed. Numerical results are presented for ultrathin films with different close-packed (face centered cubic (FCC) [1 1 1]) and non-close-packed (FCC [0 0 1] and body centered cubic (BCC) [0 0 1]) structures. Structural effects become apparent in the magnetocrystalline dipolar anisotropy energy ΔU_L when the ratio between the interlayer separation c and the 2D lattice constant a is changed. Despite the long-range character of the dipolar interaction, it is shown that the number of significantly interacting layers, conventially called coupled layers, is limited and depends on the structural aspect ratio c/a. The slope in the observed linear dependence between ΔU_L and the inverse of the film thickness t is explained by the number of the so-called coupled layers, and not by a surface contribution to volume values. Size effects appearing in ΔU are unambiguously distinguished from structural effects. Effective anisotropy energy ΔU_eff and ΔU are presented for Co [0 0 0 1] and Ni [0 0 1] ultrathin films. It is verified that the dipolar interaction makes an important contribution to ΔU_eff, but the spin reorientation transition is determined by non-dipolar interactions. The former favors the magnetization switching only when the size aspect ratio d/t, with d the characteristic lateral dimension of the film, is sufficiently small. Applications to other layered arrays of magnetic dipoles are straightforward.     

Study of magnetization reversal of Co/Pd bit-patterned media by micro-magnetic simulation

Bit-patterned media based on a single-bit-per-island may be a promising candidate for perpendicular magnetic recording at the Tb/in² level because they could provide a lower noise and higher density. The understanding of magnetization reversal processes in such patterned media is important. In this work, the range of single domain island size based on Co/Pd bit-patterned media was determined. Demagnetization effect, dipolar interactions and switching field distribution (SFD) for bit-patterned media were quantitatively studied by the simulation based on Landau-Lifshitz-Gilbert equation. The total hysteresis loops and SFD were comparable with the experiment ones. The SFD increased from 2σ=1.2 kOe (as the calculated intrinsic SFD) to the experimental value of 1.9 kOe due to dipolar interactions which is in a good agreement with the experimental results (2.0 kOe). Optimized patterned structure with a minimized SFD and maximized data storage densities was found to have an island size of 10 nm and islands separation of 20 nm. The calculated ratio of SFD/H_c (H_c: the coercivity) is 9.2%, which is below the threshold of 10% for 1 Tb/in² pattern media.     

Non-planar spin texture driven dissipation in a ferromagnet-superconductor bilayer

We report the observation of a pronounced dip in the in-plane magnetic field (H_∥) dependence of the critical current density J_c(H) and a peak in resistance R(H) of a NbN-HoNi₅ bilayer at temperatures below the magnetic ordering temperature (T_Curie ≈ 3.5 K) of HoNi₅, which is lower than the onset temperature (≈9 K) of superconductivity in the NbN layer. The extrema in J_c(H) and R(H) appear at fields much below the upper critical field of NbN. We attribute these features to a coupling between localized out-of-plane moments present in the magnetic film and Pearl vortices of the superconducting layer. A spin re-orientation transition of the localized moments by H_∥ breaks this coupling, leading to the observed excess dissipation.     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

We report time-resolved transient spectral hole burning of Verneuil-grown 20 ppm and ca. 0.6 ppm ruby (Al₂O₃:Cr³⁺) in zero field and low magnetic fields B∥c at 4 K. The hole-burning spectroscopy of the 20 ppm sample implies relatively rapid cross relaxation in the ⁴A₂ ground state on the ∼1 ms timescale both in zero field and in low magnetic fields, B∥c, up to 0.2 T. In the 0.6 ppm sample, side-hole to anti-hole conversion is observed both in zero field and in low magnetic fields. This conversion is caused by population storage in ⁴A₂ ground state levels. Spin-lattice relaxation, on the 200 ms timescale, is directly observed from the time dependence of the resonant hole and anti holes in B∥c, consistent with a very low cross-relaxation rate. However, in zero field cross relaxation in the ⁴A₂ ground state is still a significant relaxation mechanism for the 0.6 ppm sample resulting in hole decay in ∼50 ms.     

FTIR spectroscopy and radiative forcing of octafluorocyclobutane and octofluorocyclopentene

High-resolution (0.03 cm⁻¹) absolute infrared photoabsorption cross-sections of octafluorocyclobutane (c-C₄F₈) and octafluorocyclopentene (c-C₅F₈) have been measured using Fourier-transformed infrared (FTIR) spectroscopy at 279 and 297 K. Radiative forcing and global warming potential of these two species was estimated using the measured infrared cross section spectra.     

High temperature magnetic ordering in La2RuO5

Magnetic susceptibility, heat capacity and electrical resistivity measurements have been carried out on a new ruthenate, La₂RuO₅ (monoclinic, space group P2₁/c) which reveal that this compound is a magnetic semiconductor with a high magnetic ordering temperature of 170 K. The entropy associated with the magnetic transition is 8.3 J/mol K close to that expected for the low spin (S=1) state of Ru⁴⁺ ions. The low temperatures specific heat coefficient γ is found to be nearly zero consistent with the semiconducting nature of the compound. The magnetic ordering temperature of La₂RuO₅ is comparable to the highest known Curie temperature of another ruthenate, namely, metallic SrRuO₃, and in both these compounds the nominal charge state of Ru is 4+.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

B and Pt NMR study of the superconductors Li2(Pd1−xPtx)3B without inversion symmetry

We report the ¹¹B and ¹⁹⁵Pt NMR measurements in non-centrosymmetric superconductors Li₂(Pd_1−xPt_x)₃B (x = 0.0, 0.2, 0.5, 1.0). From the measurements of spin–lattice relaxation time (T₁), we found that there was a coherence peak (CP) just below superconducting transition temperature (T_c) for x = 0–0.5 but no CP in x = 1. We demonstrated that the system for x = 0–0.5 were BCS superconductors but there existed line node in the superconducting gap for x = 1.0. The ¹⁹⁵Pt Knight Shift in x = 0.2 decreased below T_c, indicating spin-singlet state. The results showed that BCS superconducting state evolves into an exotic state with line-nodes in the gap function when x is increased, as the spin–orbit coupling is enhanced.     

Antiferromagnetic order and spin glass behavior in Dy2CuIn3

The magnetic properties of the intermetallic compound Dy₂CuIn₃ have been investigated. Ac and dc-susceptibility measurements indicate an onset of antiferromagnetic ordering at T_N=19.5 K and an additional frequency dependent transition at T_ds∼9 K. Neutron diffraction studies confirm the ordered transition at 19.5±1 K. The magnetic unit cell can be described by the propagation vector k=(0.25,0.25,0) with the magnetic moment μ=2.63(4)μ_B/Dy³⁺ parallel to the c-axis. Nevertheless, neutron diffraction reveals no additional magnetic phase transition around or below 9 K, which suggests that, at lower temperatures, a spin glass state may be formed in coexistence with the antiferromagnetic mode as a result of frustration and the antagonism between ferromagnetic and antiferromagnetic exchange interactions.     

Study of the switching phenomena of TlGaS2 single crystals

Single crystals of TlGaS₂ were prepared by a special modified Bridgman technique and used to investigate the switching phenomena. The particular interest shown in switching studies of p-type TlGaS₂ compound is associated with the possibility of its uses as an effective switching and memory elements in electronic devices. The switching effect observed in such crystal shows a memory character. Using a crystal holder and cryostat we measured the switching phenomenon at different ambient conditions such as temperature, light illumination as well as sample thickness. Pronounced parameters for switching for sample of thickness 0.17 cm were determined from the experimental data such as threshold voltage V_th = 400 V, threshold current I_th = 37 μA, holding voltage V_h = 350 V, holding current I_h = 42.3 × 10⁻⁴ A, threshold power P_th = 1.48 × 10⁻² W, threshold field E_th = 196.429 V/cm as well as the ratio between the resistance in the off state R_OFF to the resistance in the conducting state R_ON as 130.253. The factors affecting these parameters have also been investigated.     

Effect of magnetic annealing on phonon behaviors of nanocrystalline BiFeO3

Influence of magnetic annealing at 823 K up to 10 T (T) on the phonon behaviors of nanocrystalline BiFeO₃ was investigated by Raman spectroscopy. The frequencies of fundamental Raman modes increase obviously with increasing annealing magnetic field, and the intensity of the 1260 cm⁻¹ two-phonon mode decreases. The pronounced anomalies of Raman phonon modes under magnetic annealing are attributed to the change of the spin-phonon coupling due to the modulation of spiral spin order. Furthermore, the temperature dependence of Raman peak positions, for the two prominent modes (147 and 176 cm⁻¹), show no notable anomaly around T_N except the sample annealed under 10 T magnetic field; meanwhile, in this sample, another obvious phonon anomaly occurs at ∼150 K (another magnetic phase transition point), which indicate that stronger magnetic annealing with 10 T intensely enhances the spin-phonon coupling, and possibly increases magnetoelectric coupling of nanocrystalline BiFeO₃ due to severely modulation of spiral spin order.     

Propagation regimes of intense circularly polarized laser beam in magnetoactive plasma

This paper presents an analytical and numerical investigation of an intense circularly polarized wave propagating along the static magnetic field parallel to oscillating magnetic field in magnetoactive plasma. In the relativistic regime such a magnetic field is created by pulse itself. The authors have studied different regimes of propagation with relativistic electron mass effect for magnetized plasma. An appropriate expression for dielectric tensor in relativistic magnetoactive plasma has been evaluated under paraxial theory. Two modes of propagation as extraordinary and ordinary exist; because of the relativistic effect, ultra-strong magnetic fields are generated which significantly influence the propagation of laser beam in plasma. The nature of propagation is characterized through the critical-divider curves in the normalized beam width with power plane For given values of normalized density (ω_p/ω) and magnetic field (ω_c/ω) the regions are namely steady divergence (SD), oscillatory divergence (OD) and self-focusing (SF). Numerical computations are performed for typical parameters of relativistic laser-plasma interaction: magnetic field B = 10-100 MG; intensity I = 10¹⁶ to 10²⁰ W/cm²; laser frequency ω = 1.1 × 10¹⁵ s⁻¹; cyclotron frequency ω_c = 1.7 × 10¹³ s⁻¹; electron density n_e = 2.18 × 10²⁰ cm⁻³. From the calculations, we confirm that a circularly polarized wave can propagate in different regimes for both the modes, and explicitly indicating enhancement in wave propagation, beam focusing/self-guiding and penetration of E-mode in presence of magnetic field.     

Microwave spectra, molecular structure and theoretical calculation of two isotopic species of acetyl isocyanate CD3C(O)NCO and CH3C(O)NCO

The microwave spectra of two isotopic species of acetyl isocyanate, ¹³CH₃C(O)NCO and CD₃C(O)NCO, were observed in order to determine the r_o structure and confirmation of the molecular conformation. These isotopic species were prepared by reacting acetyl-2-¹³C-chloride or acetyl-d₃ chloride with sliver cyanate. The rotational spectra of A-level in 26.5-60.0 GHz region have been observed by Stark-modulated microwave spectrometer. Some absorption lines in E-level were observed in ¹³CH₃C(O)NCO. The rotational constants in the ground vibrational state were determined to be A = 10654.8(18), B = 2177.32(2), and C = 1827.65(2) MHz for ¹³CH₃C(O)NCO, and A = 9713.90(6), B = 2042.04(2), and C = 1722.78(2) MHz for CD₃C(O)NCO, respectively. The values of ΔI (= I_c − I_a − I_b) of the ¹³C species (−3.024(13) uŲ) and the d₃ species (−6.163(3) uŲ) indicate that the molecule has C_s symmetry. The r_s coordinates of the carbon atom in the methyl group were determined to be |a| = 2.183(3), |b| = 0.706(9), and |c| = 0.080(87) Å. The determined coordinates were in agreement with those calculated for the cis form, in which the carbonyl group is eclipsed by the NCO group. The six structural parameters of the cis form were adjusted by fitting to the observed rotational constants. The observed rotational constants of the cis form were in better agreement with those calculated using the QCISD/6-31G (d, p) level rather than those calculated using the MP2/6-31G (d, p) level. The barrier of internal rotation of the methyl group was determined as 4.283(16) kJ mol⁻¹ in ¹³CH₃C(O)NCO. The structural tendencies and the relationship between ∠RNC and ¹⁴N quadrupole coupling constants (χ_cc) were discussed.