Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. Received 9 June 2001 and Received in final form 20 August 2001     

Angular dependence of tunneling magnetoresistance in magnetic semiconductor heterostructures

Theoretical studies on spin-dependent transport in magnetic tunnel heterostructures consisting of two diluted magnetic semiconductors (DMS) separated by a nonmagnetic semiconductor (NMS) barrier, are carried in the limit of coherent regime by including the effect of angular dependence of the magnetizations in DMS. Based on parabolic valence band effective mass approximation and spontaneous magnetization of DMS electrodes, we obtain an analytical expression of angular dependence of transmission for DMS/NMS/DMS junctions. We also examine the dependence of spin polarization and tunneling magnetoresistance (TMR) on barrier thickness, temperature, applied voltage and the relative angle between the magnetizations of two DMS layers in GaMnAs/GaAs/GaMnAs heterostructures. We discuss the theoretical interpretation of this variation. Our results show that TMR of more than 65% are obtained at zero temperature, when one GaAs monolayer is used as a tunnel barrier. It is also shown that the TMR decreases rapidly with increasing barrier width and applied voltage; however at high voltages and low thicknesses, the TMR first increases and then decreases. Our calculations explain the main features of the recent experimental observations and the application of the predicted results may prove useful in designing nano spin-valve devices.     

Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make non-volatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetoresistance of MTJs, how their properties change as a function of tunnel-barrier thickness and applied bias, and what are the magnitude and direction of the spin-transfer-torque vector induced by a tunnel current.     

Pure spin currents generation in magnetic tunnel junctions by means of adiabatic quantum pumping

We study the spin polarized currents generation in a magnetic (ferromagnetic/ferromagnetic) tunnel junction by means of adiabatic quantum pumping. Using a scattering matrix approach, it is shown that a pure spin current can be pumped from one ferromagnetic lead into the adjacent one by adiabatic modulation of the magnetization and the height of the barrier at the interface in absence of external bias voltage. We numerically study the characteristic features of the pure spin current and discuss its behavior for realistic values of the parameters. We show that the generated pure spin current is robust with respect to the variation of the magnetization strength, a very important feature for a realistic device, and that the proposed device can operate close to the optimal pumping regime. An experimental realization of a pure spin current injector is also discussed.     

Spin-dependent shot noise in diluted-magnetic-semiconductor/ semiconductor heterostructures

We investigated the shot noise properties in the diluted-magnetic-semiconductor/semiconductor heterostructures, where the sp-d exchange interaction gives rise to a giant spin splitting when an external magnetic field is applied along the growth direction of the heterostructures. It is found that the noise becomes strongly spin-dependent and can be greatly modulated not only by the external magnetic and electric fields, but also by the structural configuration and geometric parameters. Both the spin-up and spin-down components of the noise spectral density can be greatly suppressed by the magnetic field. The Fano factor is notably sensitive to the transmission probabilities, which varies greatly with the spin-polarization, the external magnetic field, and the structural configuration.     

Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well

We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.     

Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wires

We present the properties of ballistic spin transport through magnetic barrier structures in semiconductor nano-wires. The Landauer's approach is adopted to calculation of the transmission probability and the conductance for various host material nano-wires which are different remarkably from each other in effective g-factors. A host material having small effective g-factor is quantized in the conductance and the spin-dependence is disappeared in it. Nevertheless this kind of behavior is broken for the host material having large effective g-factor and the spin-dependent splitting is shown.     

Theory of spin polarization in mesoscopic spin–orbit coupling systems

We establish a general formalism of the bulk spin polarization (BSP) and the current-based spin polarization (CSP) for mesoscopic ferromagnetic and spin–orbit interaction (SOI) semiconducting systems. Based on this formalism, we reveal the basic properties of BSP and CSP and their relationships. The BSP describes the intrinsic spin polarized properties of devices. The CSP depends on both intrinsic parameters of device and the incident current. For the non-spin-polarized incident current with the in-phase spin-phase coherence, CSP equals to BSP. We give analytically the BSP and CSP of several typical nanodevice models, ferromagnetic nanowire, Rashba nanowire and rings. These results provide basic physical behaviors of BSP and CSP and their relationships.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Resonant Josephson tunneling through S-I-S junctions of arbitrary size

The Josephson tunneling current in S-I-S structures where the main current transport channel is resonant tunneling through an isolated localized state is calculated using the Bogolyubov-de Gennes equations. It is shown that the efficiency of equilibrium Josephson resonant tunneling is determined only by the ratio of the width of the resonance level to the absolute value of the order parameter for the superconducting electrodes with arbitrary relationships among the system parameters. Zh. éksp. Teor. Fiz. 112, 342–352 (July 1997)     

Spin-dependent conductance in FM/quantum-dot/FM tunneling system

We present a theoretical study of the spin-dependent conductance spectra in a FM/semiconductor quantum-dot (QD)/FM system. Both the Rashba spin-orbit (SO) coupling in the QD and spin-flip scattering caused by magnetic barrier impurities are taken into account. It is found that in the single-level QD system with parallel magnetic moments in the two FM leads, due to the interference between different tunneling paths through the spin-degenerate level, a dip or a narrow resonant peak can appear in the conductance spectra, which depends on the property of the spin-flip scattering. When the magnetizations of the two FM leads are noncollinear, the resonant peak can be transformed into a dip. The Rashba SO coupling manifests itself by a Rashba phase factor, which changes the phase information of every tunneling path and can greatly modulate the conductance. When the QD has multiple levels, the Rashba interlevel spin-flip effect appears, which changes the topological property of the structure. Its interplay with the Rashba phase can directly tune the coupling strengths between dot and leads, and can result in switching from resonance into antiresonance in the conductance spectra.     

High-efficiency spin filtering in salophen-based molecular junctions modulated with different transition metal atoms

Based on the density functional theory and nonequilibrium Green's function methods, we investigate the spin transport properties of the molecular junctions constructed by a homologous series of 3d transition metal(II) salophens (TM-salophens, TM = Co, Fe, Ni and Mn) sandwiched between two gold electrodes. It is found that among the four molecular junctions only Co-salophen junction can act as an efficient spin filter distinctively. The conductance through Co-salophen molecular junction is dominated by spin-down electrons. The mechanism is proposed for these phenomena.     

Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schr?dinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.     

Optical manipulation of coupled spins in magnetic semiconductor systems: A path toward spin optoelectronics

Experimental results based on the optical excitations in the III–V-based ferromagnetic semiconductors are reviewed. On the bases of results obtained by both cw- and femto-second-pulse optical excitation, we point out the feasibility of magnetization rotation in the hole-mediated ferromagnetic semiconductor (Ga,Mn)As via the angular momentum and photon energy of light. Here, p–d exchange interaction is the effective channel that transmits a small change in spin axis of the valence band to the ferromagnetically coupled Mn spin sub-system. Within the limit of this picture, we also discuss a hole–Mn spin complex for which hole and Mn spins rotate and relax together upon optical excitation. Partial magnetization reversal observed in the experiments of the electrical current injection in (Ga,Mn)As-based magnetic-tunnel-junction devices is also reviewed in view of the effects caused by the spin-polarized holes. Here, we point out that a spin current of 10⁵ A/cm² may be reduced further if spin injection efficiency can be improved by the optimal designs of the device structure.     

高磁电阻磁性隧道结的几种微制备方法研究

利用金属掩模法优化了制备磁性隧道结的实验和工艺条件，金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co₇₅Fe₂₅为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜， 直接制备出了室温隧穿磁电阻（TMR）为30%—48％的磁性隧道结，其结构为Ta(5 nm)/Cu(25 nm)/Ni₇₉Fe₂₁(5 nm)/Ir₂₂Mn₇₈(10 nm)/ Co₇₅Fe₂₅ (4 nm)/Al(08 nm)-O/Co₇₅Fe₂₅(4 nm)/Ni₇₉Fe ₂₁(20 nm)/Ta(5 nm).同时，利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀，制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明，采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结，可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元. 关键词： 磁性隧道结 隧穿磁电阻 金属掩模法 光刻法     

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15 V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.     

Spin dynamics and quantum transport in magnetic semiconductor quantum structures

Quantum structures derived from magnetic semiconductors serve as a powerful arena within which to study the interplay between quantum electronics and thin film magnetism. In particular, the semiconductor aspects of these flexible systems allow direct access to the electronic spin degrees of freedom using both magneto-optical as well as magneto-transport probes. Here we provide an overview of recent developments in the experimental study of II–VI magnetic semiconductor quantum structures, with particular emphasis on the dynamical behavior of field-tunable electronic spin states and spin-dependent quantum transport.     

Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.     

Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

We investigate characteristics of spin tunneling time in ZnSe/Ze_1-xMn_xSe multilayers under the influence of both an electric field and a magnetic field. The results indicate that the tunneling time shows complicated oscillations and significant spin separation for electrons with different spin orientations traversing semimagnetic semiconductor heterostructures. It is also shown that the tunneling time exhibits obvious asymmetry in opposite tunneling directions for electrons tunneling through asymmetric heterostructures, which mainly occurs in resonant regions. The degree of the asymmetry of the tunneling time is not only spin-polarization dependent but also external-field induced. Received 10 July 2001     

Stability of magnetic tunnel junctions

When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during a writing process.