Enhanced antiferromagnetic coupling in dual-synthetic antiferromagnet with Co2FeAl electrodes

We study dual-synthetic antiferromagnets (DSyAFs) using Co₂FeAl (CFA) Heusler electrodes with a stack structure of Ta/CFA/Ru/CFA/Ru/CFA/Ta. When the thicknesses of the two Ru layers are 0.45 nm, 0.65 nm or 0.45 nm, 1.00 nm, the CFA-based DSyAF has a strong antiferromagnetic coupling between adjacent CFA layers at room temperature with a saturation magnetic field of ∼11,000 Oe, a saturation magnetization of ∼710 emu/cm³ and a coercivity of ∼2.0 Oe. Moreover, the DSyAF has a good thermal stability up to 400 °C, at which CFA films show B2-ordered structure. Therefore, the CFA-based DSyAFs are favorable for applications in future spintronic devices.     

Enhancement of magneto-optical response in nanocomposite-hydrogenated amorphous silicon multilayers

The dependence of the magnetic and magneto-optical properties on the semiconductor layer thickness has been studied for a [(Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅(X)/α-Si:H(Y)]₃₀ multilayer. It is found that an increase in the Si layer thickness to 1.3–1.7 nm leads to an increase in the transverse Kerr effect, magnetization, and coercive force. The changes in the properties of the nanomultilayer system are related to the percolation transition between CoFeZr granules through Si streaks. This percolation leads to effective exchange interaction between isolated ferromagnetic granules of Co₄₅Fe₄₅Zr₁₀ alloy and increase in magneto-optical response.     

甲基铝氧烷纳米管分子结构的理论研究

用密度泛函理论对[(AlOMe)₂]_n、[(AlOMe)₃]_n和[(AlOMe)₄]_n (n=1～10)作为重复单元组成的甲基铝氧烷(MAO)纳米管进行了研究,计算了其所有体系的结合能和总能量．结果表明,[(AlOMe)₃]_n和[(AlOMe)₄]_n具有稳定的纳米管结构,在所有研究系统中n=3时具有最稳定的结构．考察发现,[(Al₅O₅)]_n和[(Al₇O₇)]_n两种结构的二聚体具有无规则、扭曲的结构,不能继续增长形成纳米管结构．     

Spin-dependent current and magnetization reversal in Tb22Co5Fe73/Pr6O11/Tb19Co5Fe76 nanofilms in laser radiation field

The results of investigation of magnetization reversal dynamics of ferrimagnetic amorphous nanolayers with transverse anisotropy is investigated for Al₂O₃/Tb₂₂Co₅Fe₇₃/Al₂O₃ and Al₂O₃/Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆/Al₂O₃ multilayer films irradiated by laser pulses, as well as the effect of such irradiation on the resistance in a Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆ tunnel microcontact. It is shown that magnetization reversal in magnetic nanolayers in the laser radiation field may occur not only because of heating and the action of the external magnetic field, but also under the action of the magnetic field induced by circularly polarized laser radiation, as well as owing to transfer of magnetic moments by polarized electrons. Laser radiation can be used to control (by changing the resistance by a factor of 1.5–2.0) the conductivity of the Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆ tunnel microresistor. Original Russian Text ? N.N. Krupa, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 108, No. 5, pp. 981–992.     

Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl（CFA）/MgO multilayers are studied to understand perpendicular magnetic anisotropy（PMA） of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization（M s） changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Transmission electron microscopy of Co2(Cr1−xFex)Al sputtered films and their magnetic tunneling junctions

The microstructures of Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al sputtered films and of their magnetic tunnel junctions (MTJs) have been investigated to discuss the possible reasons for an unexpectedly low tunneling magnetoresistance (TMR). The structure of the Co₂FeAl film changed from B2 to L2₁ with increasing substrate temperature, while that of the Co₂(Cr_0.4Fe_0.6)Al film remained B2 up to 500 °C. The thermodynamically predicted phase separation was not observed in the films. The low TMR values obtained from the MTJs using the Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al films are attributed to the low-spin polarization expected from the low degree of order in these films. The TMR values depend sensitively on the interfacial structure of the tunnel junctions when the degree of order of the film is low.     

Giant magnetoresistance in Co–Al2O3 granular films prepared by self-organized growth

Co–Al₂O₃ granular films with a narrow distribution in cluster size of Co clusters embedded in Al₂O₃ matrix were prepared by sequential deposition based on self-organized growth. Resistivity dependence of giant magnetoresistance (GMR) was studied. The GMR takes a maximum of 5.2% at room temperature and 9.4% at 13 K and 5700 Gs when the resistivity of the sample is 4×10⁵–7×10⁵ μΩ cm. The temperature dependence of resistivities and GMR were discussed especially. A temperature dependence of conductance ρ∼exp[T₁/(T+T₀)] was found, which indicates the dominant conduction mechanism is fluctuation-induced tunneling. A linear relationship of GMR versus T was observed, GMR=a–kT, in applied magnetic field 5700 Gs. The remarkable character of temperature dependence of GMR should be due to the special microstructure that the clusters are monodispersed in the films.     

Field dependence of orbital magnetic moments in the Heusler compounds Co<Subscript>2</Subscript>FeAl and Co<Subscript>2</Subscript>Cr<Subscript>0.6</Subscript>Fe<Subscript>0.4</Subscript>Al

Orbital and spin magnetic moments of the Heusler compounds Co₂FeAl and Co₂Cr_0.6Fe_0.4Al were measured by magnetic circular dichroism in X-ray absorption (XMCD). The orbital magnetic moments per spin are quite large (0.1–0.2) compared to bulk values of Fe and Co metals, indicating a considerable spin–orbit coupling in these Heusler compounds. A strong localization of the 3d electron states might be responsible for this observation. The Co and Fe orbital to spin moment ratio shows a distinct decrease of r(Fe)=0.04±0.02 and r(Co)=0.06±0.02 with increasing external field for the ternary compound Co₂FeAl, while the ratio is within error limits independent of the field for Co₂Cr_0.6Fe_0.4Al. This is discussed in terms of a relation to magnetocrystalline anisotropies. PACS 75.50.Cc; 71.20.Lp; 78.40.Kc     

双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

用直流磁控溅射方法制备了双合成反铁磁结构Co₉₀Fe₁₀(5 nm)/Ru(x nm)/Co₉₀Fe₁₀(3 nm)/Ru(y nm)/Co₉₀Fe₁₀(5 nm)(x=0.45,0.45,1.00; y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究 关键词： 双合成反铁磁 自旋阀 巨磁电阻     

Magnetic exchange bias enhancement through seed layer variation in FeMn/NiFe layered structures

The exchange bias and crystalline texture of the multilayer structure (Ta/Al/seed/Fe₅₀Mn₅₀/Ni₈₁Fe₁₉/Al₂O₃/Ni₈₁Fe₁₉/Al/Ta with seed=Ni₈₁Fe₁₉ or Ni₈₁Fe₁₉/Cu) has been characterized. Measurements indicate an abrupt decrease in exchange bias of the Ni₈₁Fe₁₉ pinned layer for samples with very thin seed layers, and exchange bias as high as 325 Oe for thicker seed layers. Fluctuation of exchange bias with thickness was greatly reduced for the Ni₈₁Fe₁₉/Cu seed configuration. X-ray diffraction measurements demonstrate a correlation between exchange bias and strong (1 1 1) texture of FeMn. The results suggest a high sensitivity of Ni₈₁Fe₁₉ roughness and texture on deposition conditions, and corroborate previous observations of roughness in ultrathin NiFe films.     

The effect of nonmagnetic defects on magnetic behavior for multilayers Ta/Co/Co3O4/Ta

The exchange bias field H_E was much higher for Ta/Co/Co₃O₄/Ta than Ta/Co/Co₃O₄, fabricated in a magnetron sputtering system under the same experimental conditions. The XPS analysis showed that Ta atoms of cap layer for Ta/Co/Co₃O₄/Ta diffused into Co₃O₄ layer and reduced Co₃O₄, and introduced some nonmagnetic defects into the AFM layer. The dilution of the AFM layer led to the formation of volume domains. We believed that the higher H_E for the multilayers Ta/Co/Co₃O₄/Ta was primarily attributed to the formation of volume domain due to some nonmagnetic defects in AFM layer.     

Study of the [(Co45Fe45Zr10)x(Al2O3)100−x/a-Si:H]m multilayer nanostructure by polarized neutron reflectometry

Polarized neutron reflectometry was used to investigate the amorphous multilayer nanostructures [(Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100−x/a-Si:H]_m, whose magnetic properties are dependent on the concentration of the magnetic constituent (x=34, 47 and 60 at%) as well as on the thicknesses of the metal-dielectric (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100−x and semiconductor a-Si:H layers. The average magnetization of the individual magnetic layer is found to be inhomogeneous with the magnetically active central part and two magnetically dead parts at the interfaces.     

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

An ultra-thin Co or CoFe diffusion barrier inserted at the NiFe/Cu interfaces was revealed to effectively control the electrical and magnetic stability of NiFe/Cu/NiFe-based giant magnetoresistance (GMR) spin-valve spintronics devices (SVSDs) operating at high current density. It was found that the activation energy, E_a, related to the electromigration (EM)-induced inter-diffusion process for the patterned NiFe(3)/Cu(2)/NiFe(3 nm) magnetic multi-layered devices (MMLD) was remarkably increased from 0.52±0.2 eV to 1.17±0.16 eV after the insertion of an ultra-thin Co diffusion barrier at the NiFe/Cu interfaces. The dramatically reduced “current shunting paths” from the Cu spacer to the NiFe thin films and the development of “self-healing process” resulted from the effectively restrained Cu inter-diffusion (intermixing with Ni atoms) due to the diffusion barriers were found to be primarily responsible for the improvement of electrical and magnetic stability. The further investigation on the effects of controlling Cu spacer inter-diffusion by diffusion barriers on the EM and thermomigration (TM)-induced magnetic degradation was carried out for the NiFe/(Co or Co₉₀Fe₁₀)/Cu/(Co or Co₉₀Fe₁₀)/NiFe/FeMn top exchange-biased GMR (EBGMR) SVSDs electrically stressed under the applied DC current density of J=2.5×10⁷ A/cm² (I=16.5∼17.25 mA). It was clearly confirmed that the Co and the CoFe diffusion barriers effectively control the Cu spacer inter-diffusion resulting in a smaller reduction in both GMR ratio and exchange bias field of the EBGMR SVSDs. Furthermore, it was obviously observed that the effects of CoFe diffusion barrier on controlling the Cu spacer inter-diffusion are more significant than that of Co. The effectively reduced Mn atomic inter-diffusion at the NiFe/FeMn interface and the well-maintained interfacial spin-dependent scattering resulted from the control of EM and TM-induced Cu spacer inter-diffusion were the main physical reasons for the significant improvement of magnetic and electrical degradation of top EBGMR SVSDs.     

Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36

The morphology and the magnetic and conducting properties of an amorphous multilayer nanosystem [(Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅/a-Si:H]₃₆ consisting of (Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅ magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sample is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co₄₅Fe₄₅Zr₁₀ grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, these grains are packed in layers alternating in the vertical direction. The average lateral distance between nanoparticles in the layer plane has been determined, from which the dimensions of metal grains in each sample have been estimated.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Study of microstructure and phase evolution of hot-dipped aluminide mild steel during high-temperature diffusion using electron backscatter diffraction

Mild steel was coated by hot-dipping into a molten aluminum bath. The microstructure and phase evolution in the aluminide layer during diffusion at 750 °C in static air were analyzed by electron backscatter diffraction (EBSD). The results showed that the aluminide layer of the as-coated specimen consisted of an outer aluminum topcoat, minor FeAl₃ and major Fe₂Al₅, respectively. Also, Fe₂Al₅ possessed a tongue-like morphology, which caused corresponding serration-like morphology in the steel substrate. A portion of the peaks of serration-like substrate were isolated, after short exposure at 750 °C, and accompanied by the formation of voids, which continued to appear with further exposure at 750 °C. As the aluminum topcoat was consumed, FeAl₃ phase disappeared and left an aluminide layer of Fe₂Al₅ phase. After 60 min of exposure, FeAl₂ and FeAl phases formed at the interface between Fe₂Al₅ and the steel substrate. With increasing exposure time, the voids condensed and the serration-like morphology disappeared, while FeAl₂ and FeAl phases kept growing. After prolonged exposure, the aluminide layer was composed of FeAl₂ and FeAl and possessed a flat interface between FeAl and steel substrate.     

Electrical and magnetic properties of [(CoFeZr)x(Al2O3)1 ? x/(α-SiH)]n multilayer structures

The concentration dependences of the electrical resistivity and complex permeability of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures and (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites have been studied. It has been established that introduction of a semiconductor interlayer into the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites substantially decreases the electrical resistivity of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures. The concentration dependences of the real and imaginary parts of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures substantially differ from those of the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites. The real part of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures follows the curve with a minimum near the percolation threshold of the composite, and the imaginary part smoothly decreases as the ferromagnetic phase concentration increases. The results obtained are explained by the increase in the bifurcation temperature due to the conduction electrons of the semiconductor interlayer, which favor magnetic ordering of ferromagnetic grains.     

Influence of oxidized interlayers on magnetic properties of multilayer films based on amorphous ferromagnet–dielectric nanocomposites

Films of composites (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x, (Co₈₄Nb₁₄Ta₂)_x(SiO₂)_100–x, (Co₄₁Fe₃₉B₂₀)_x(SiO₂)_100–x and multilayer heterogeneous composite–composite structures {[(Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x]/[(Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x + N₂]}_n, {[(Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x]/[(Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x + O₂]}_n, {[(Co₄₁Fe₃₉B₂₀)_x(SiO₂)_100–x]/[(Co₄₁Fe₃₉B₂₀)_x(SiO₂)_100–x + O₂]}_n, and {[(Co₈₄Nb₁₄Ta₂)_x(SiO₂)_100–x]/[(Co₈₄Nb₁₄Ta₂)_x(SiO₂)_100–x + O₂]}_n have been deposited using the ionbeam sputtering method with a cyclic supply of reaction gases during deposition. The structure and magnetic properties of the films have been studied. It has been shown that the introduction of an oxidized interlayer makes it possible to suppress the perpendicular magnetic anisotropy in the (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_100–x composite with the metallic phase concentration higher than the percolation threshold.     

Co57 and Fe57 mössbauer studies of the spinels FeCo2O4 and Fe0.5Co2.5O4

Mössbauer source and absorber spectra of FeCo₂O₄ and Fe_0.5Co_2.5O₄ have been obtained between 82 and 523 K. Interpretation of the spectra allow the cation distributions of the compounds to be determined. FeCo₂O₄ is Co²⁺_0.55Fe³⁺_0.45[Co²⁺_0.45Fe³⁺_0.55Co³⁺_1.0]O₄ and Fe_0.5Co_2.5O₄ is Co₁²⁺[Fe³⁺_0.5Co³⁺_1.5]O₄. Spinel tetrahedral site quadruple splitting is observed in both compounds.     

Revelation of the microstructure of oxide FeAl/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite

The structural transformations at different stages of the preparation of oxide FeAl/Al₂O₃ nanocomposite by mechanosynthesis with the use of a preliminarily activated FeAl precursor are studied by means of transmission electron microscopy, X-ray diffraction and Mössbauer spectroscopy.