Time resolved spectra of optical and electrical transient response induced by nanosecond laser pulses in amorphous AgInSbTe films

The phase transition dynamics of amorphous Ag₈In₁₄Sb₅₅Te₂₃ (AIST) thin films induced by single nanosecond laser pulses were studied by transient optical reflectivity and electrical resistance measurements with nanosecond resolution. Phase transition driven by nanosecond laser pulses can be achieved in a proper fluence range on AIST thin films. The results show that phase transition dynamics driven by nanosecond laser pulses was a multi-stage optical evolution process involving melt, solidification, recalescence, and recrystallion. However, it was found that the real-time responses of optical and electrical signals were quite different under the same irradiated condition. The recalescence process reflected by the second rising of optical reflectivity will not result in obvious changes in electrical resistance. The dependence of saturated time determined by optical and electrical evolution curve on laser pulse fluence was compared and analyzed. A two-dimensional percolation model was employed to explain the difference between electrical and optical transient responses.     

Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation

The crystallization dynamics of as-deposited amorphous Ge₂Sb₂Te₅ films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed.     

Laser opto-acoustic study of phase transitions in metals confined by transparent dielectric

First-order phase transitions in metal induced by nanosecond laser pulse are studied here. The metal surface is irradiated through a layer of transparent dielectric??an optical glass. Such confinement considerably increases the efficiency of pressure generation at the metal surface. This technique allows to obtain near-critical states of metals??with temperatures ??10⁴ K and pressures ??10⁴ atm with table-top equipment. At the same time the glass prevents the ablation plume formation??so the surface temperature can be measured using thermal radiation data. An experimental setup for simultaneous measurements of pressure, temperature and reflectivity was assembled based on the elaborated method of experimental research. The processes of melting of lead and boiling of mercury were studied. The onset of the phase transition process led to a considerable tightening of the pressure pulse. A substantial drop of surface reflectivity due to increase of temperature and decrease of density was observed.     

Growth and spectral-luminescent study of SrMoO<Subscript>4</Subscript> crystals doped with Tm<Superscript>3+</Superscript> ions

SrMoO₄ crystals doped with Tm³⁺ ions have been produced from a melt using the Czochralski method; their spectral-luminescent characteristics have been studied, and laser radiation has been generated at the wavelength of 1.94 μm using laser-diode excitation. The high absorption section at the wavelength of 795 nm, the fairly high luminescence section, the long lifetime at the upper laser level ³F4 of 1.5 ms, and a wide luminescence band allow one to hope for developing efficient tunable Tm³⁺: SrMoO₄ crystal lasers with diode pumping in the range of 1.7–2.0 μm, which are capable of implementing SRS self-transformation of radiation into the middle IR band.     

Mechanism of phase conjugation via stimulated Brillouin scattering in narrow band gap semiconductors

We develop a theoretical model to study optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in narrow band gap transversely magnetized semiconductors. Threshold value of pump electric field and reflectivity of the image radiation for the onset of OPC-SBS are estimated. The analysis is applied to both cases viz. centrosymmetric (CS) and non-centrosymmetric (NCS) crystals. Numerical estimates made for n-type InSb crystal at liquid nitrogen temperature duly irradiated by nanosecond pulsed 10.6 μm CO₂ laser shows that high OPC-SBS reflectivity (90%) can be achieved in NCS crystals at moderate pump electric fields if the crystal is used as an optical waveguide with relatively large interaction length (L = 5 mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors.     

Electronic excitations and luminescence of SrMgF4 single crystals

The electronic and crystal structures of SrMgF₄ single crystals grown by the Bridgman method have been investigated. The undoped SrMgF₄ single crystals have been studied using low-temperature (T = 10 K) time-resolved fluorescence optical and vacuum ultraviolet spectroscopy under selective excitation by synchrotron radiation (3.7–36.0 eV). Based on the measured reflectivity spectra and calculated spectra of the optical constants, the following parameters of the electronic structure have been determined for the first time: the minimum energy of interband transitions E _g = 12.55 eV, the position of the first exciton peak E _n = 1 = 11.37 eV, the position of the maximum of the “exciton” luminescence excitation band at 10.7 eV, and the position of the fundamental absorption edge at 10.3 eV. It has been found that photoluminescence excitation occurs predominantly in the region of the low-energy fundamental absorption edge of the crystal and that, at energies above E _g , the energy transfer from the matrix to luminescence centers is inefficient. The exciton migration is the main excitation channel of photoluminescence bands at 2.6–3.3 and 3.3–4.2 eV. The direct photoexcitation is characteristic of photoluminescence from defects at 1.8–2.6 and 4.2–5.5 eV.     

LiNH4SO4: A new crystal with an isotropic point

Spectral dependences of the refractive and birefringence indices of ??-LiNH₄SO₄ crystals have been investigated. Curves n _i (??) are found to intersect, which indicates the existence of an isotropic point (??n _y = 0) for this crystal; at room temperature, this point corresponds to wavelength ??₀ ?? 683 nm. The isotropic point is blue-shifted upon heating. Temperature measurements of the angle between the optical axes indicate that the optical-axis plane changes orientation when passing through the isotropic state. The results obtained give grounds to consider LiNH₄SO₄ as a new crystal with an isotropic point.     

Laser induced damage studies in mercury cadmium telluride

We have investigated laser induced damage at laser wavelength in diamond paste polished (mirror finish) and carborundum polished Hg_0.8Cd_0.2Te (MCT) samples with increasing fluence as well as number of pulses. Evolution of damage morphology in two types of samples is quite different. In case of diamond paste polished samples, evolution of damage morphological features is consistent with Hg evaporation with transport of Cd/Te globules towards the periphery of the molten region. Cd/Te globules get accumulated with successive laser pulses at the periphery indicating an accumulation effect. Real time reflectivity (RTR) measurement has been done to understand melt pool dynamics. RTR measurements along with the thermal profile of the melt pool are in good agreement with thermal melting model of laser irradiated MCT samples. In case of carborundum polished samples, laser damage threshold is significantly reduced. Damage morphological features are significantly influenced by surface microstructural condition. From comparison of the morphological features in the two cases, it can be inferred that laser processing of MCT for device applications depends significantly on surface preparation conditions.     

Simulation of dynamics of phase transitions in CdTe by pulsed laser irradiation

Numerical simulation of melting and solidification processes induced in CdTe by nanosecond radiation of ruby laser (λ = 694 nm, τ = 20 and 80 ns) and KrF excimer laser (λ = 248 nm, τ = 20 ns) taking into account components diffusion in melt and their evaporation from the surface has been carried out. Cd atoms evaporation has shown to essentially affect the dynamics of phase transitions in the near-surface region. Thus, in the case of the influence of ruby laser irradiation intensive surface cooling results in the formation of nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ∼20 nm from the surface. The melt formed under the surface extends both to the surface and to the semiconductor volume as well. As a result of cadmium telluride components evaporation and diffusion in the melt the near-surface region is enriched with tellurium. The obtained melting threshold value of irradiation energy density is in a reasonable agreement with experimental data.     

Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization

XeF excimer laser-induced melting and recrystallization dynamics of amorphous germanium are investigated using time-resolved optical reflection and transmission measurements with a nanosecond time resolution, field-emission scanning electron microscopy, and micro-Raman spectroscopy. It is found that the disc-shaped grain with a diameter of approximately 0.8 μm is located in the complete melting regime with a melt phase duration of approximately 141–200 ns. The significant change of transmissivity is a key phenomenon revealing the excessive excimer laser fluence during excimer laser crystallization by in-situ optical measurements. Differences between the melting and recrystallization phenomenon for Si and Ge thin films are also discussed.     

Production ofW-bosons in high energye + e − ande − p collisions

We study the processe ⁺ e ^?→W+hadrons from theZ ⁰-pole to the threshold region forW-pair production, keeping the widths of theZ ⁰ andW finite. Already slightly below threshold the cross section is strongly depressed. Also the total cross section at theZ ⁰-peak is very small. We present a simple model to account for this. We also give exact results to lowest order for the weak Compton processese ⁺ e ^?→e ⁺ W ^? v _e ande ^? p→pW ^? v _e and compare them with results obtained with the equivalent photon approximation.     

Linear optical properties of γ-modification of bismuth borate BiB3O6

The refractive index dispersion of the ??-BiB₃O₆ crystal in the wavelength range 0.43?C0.81 ??m has been measured. It has been shown that the principal refractive indices n ₁, n ₂, and n ₃ are on average higher than those of ??-BiB₃O₆, but are slightly lower than those of ??-BiB₃O₆. The temperature dependences of the rotation angle ??(T) of the optical indicatrix and birefringence ??n ₂(T) = (n ₁ ? n ₃)(T) have been studied in the temperature range 100?C963 K. It has been shown that the ??-BiB₃O₆ crystal is stable in this temperature region.     

Determination of the electron concentration and temperature,as well as the reduced electric field strength,in the plasma of a high-voltage nanosecond discharge initiated in atmospheric-pressure nitrogen by a runaway electron beam

We report on the results of spectroscopic measurements of electron concentration N _e and temperature T _e , as well as the reduced electric field strength E/N in the plasma of a high-voltage nanosecond discharge in the gap with a strongly nonuniform electric field distribution, which is filled with nitrogen under the atmospheric pressure. The possibility of using the method for determining T _e and E/N, which is based on the determination of the ratio of the peak intensities of the ionic N ₂ ⁺ (λ = 391.4 nm) and molecular N₂ (λ = 394 nm) nitrogen bands, is proved. We detected the mean values of quantities N _e , T _e , and E/N amounting to ～2 × 10¹⁴ cm^?3, ～2 eV, and ～240 Td, respectively. In addition, the dynamics of these quantities is determined.     

Numerical simulation of nonlinear properties of fullerene-containing one-dimensional photonic crystal

A model of interaction between a one-dimensional photonic crystal (PC) containing a defect (nonlinear optical layer of C₆₀ fullerene) and radiation with a wavelength ??₀= 1064 nm under steady-state conditions has been considered. This structure is a Fabry-Perot microcavity: a fullerene layer (with a thickness multiple of ??₀/2) is placed between the interference mirrors formed by alternating layers ??₀/4 thick. The PC under consideration (1) has a narrow transmission band in the vicinity of ??₀ against the background of a relatively wide 100%-reflection band (photonic band gap) in the linear mode and (2) provides multiple amplification of the radiation intensity in the intermediate layer with respect to the external radiation intensity. Since C₆₀ fullerene exhibits a significant optical Kerr nonlinearity, the optical thickness of the intermediate layer under irradiation deviates from the value multiple of ??₀/2; as a result, 100% transmission for ??₀ changes to almost 100% reflection at a certain radiation intensity. Thus, this structure behaves as a peculiar optical limiter.     

Luminescence and selective heat radiation of Yb<Subscript>2</Subscript>O<Subscript>3</Subscript> upon the resonant and thermal laser excitation

Yb₂O₃ polycrystals with a size of up to 10 mm are synthesized using the sintering and melting of the ultrapure Yb₂O₃ powders by the CO₂-laser radiation with the power P _L ≤ 100 W at the wavelength λ = 10.6 μm at the melting point T _m = 2703 K, forming due to surface tension in melt, and crystallization in air. The analysis of the polycrystal microstructure using the methods of optical and electron microscopy and X- ray diffractometry shows that perfect oxide crystallites are formed in the course of crystallization after melting-through. The transformation of the luminescence and selective heat radiation (SHR) spectra of the Yb₂O₃ polycrystals is studied under the resonant excitation at λ ≈ 975 nm using a laser diode and the laser heating at the wavelength λ = 10.6 μm. When the resonant excitation power of the Yb³⁺ ions increases from 0.15 to 4.5 W, the Stokes luminescence of the Yb₂O₃ polycrystals is sequentially transformed into SHR and the thermal radiation of the crystal lattice. The transformation of the emission spectra of the Yb₂O₃ polycrystals with an increase in the laser heating intensity by about four orders of magnitude can be represented as the low-temperature heat radiation, spectral burst of the thermodynamically nonequilibrium SHR of the Yb³⁺ ions, and the high-temperature radiation of the crystal lattice. The temperature dependence of the luminescence spectra and SHR of the Yb₂O₃ polycrystals on the intensity of the laser and laser-thermal excitation and the concentration quenching of the Yb³⁺ luminescence in oxides indicate the key role of the interaction of the f-electron shell of the Yb³⁺ ions with the natural oscillations of the crystal lattice in the processes of the multiphonon excitation and nonradiative (multiphonon) and radiative (vibronic) relaxation.     

Femtosecond mechanisms of electronic excitations in crystalline materials

The lattice dynamics of crystals is investigated in the course of high-power electronic excitation. It is revealed that, at W _e < W _eo , atoms and ions are displaced from their regular sites for 100–300 fs. Subsequent relaxation of the crystal lattice in response to a strong local electric field induced by the collisional displacement of ions occurs for 10–50 ns in an oscillatory manner with a period of 0.5–1.5 ps.     

High reflectivity phase conjugation in magnetized diffusion driven semiconductors

Optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in magnetized diffusion driven semiconductors under the off-resonant transition regime has been investigated theoretically. The model is based upon the coupled-mode approach and incorporates the effect of pump absorption through the first-order induced polarization. The linear dispersion is found not to affect the reflectivity of the phase conjugate Stokes shifted Brillouin mode. The reflectivity of the image radiation is dependent upon the Brillouin susceptibility and can be significantly enhanced through n-type doping of the crystal and the simultaneous application of magnetic field. Moreover, the threshold of the pump intensity required for the occurrence of SBS in the crystal with finite optical attenuation can be considerably diminished through a suitable choice of the excess carrier concentration and the magnetic field. Consequently, OPC-SBS becomes a possible tool in phase-conjugate optics even under not-too-high power laser excitation by using moderately doped n-type semiconductors kept under the influence of magnetic field. Numerical estimates made for n-InSb crystal at 77 K duly irradiated by nanosecond pulsed 10.6 μm CO₂ laser show that high OPC-SBS reflectivity (70%) can be achieved at pump intensities below the optical damage threshold if the crystal is used as an optical waveguide with relatively large interaction length (L ∼5 mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors.     

Properties of melt-grown single crystals of “YB68”

Single crystals of yttrium boride YB_n with n = 61 ± 3 were grown from the melt. Precision density and lattice parameter measurements indicate a congruent melting point at n = 61.7 and a stoichiometric composition at n = 68. Measurements of elastic constants, acoustic attenuation, electrical resistivity and optical absorption are presented. High resolution transmission electron microscopy reveals a complex crystal structure similar to that found by using X-rays. A comparison of the properties of YB_n with those of β-boron show that there are many similarities.     

Limits to possible scalar-boson mass and coupling from e+e− collisions

Measurements of e⁺e^? → e⁺e^? at 2.8 GeV are reported and interpreted in terms of limits for the mass and coupling of a possible scalar boson of the type introduced in recent renormalizable models of weak interactions. In particular, in the Georgi-Glashow scheme of leptons we find that the scalar boson mass must be larger than 10 GeV for an m_W = 10 GeV (m_W mass of the W-boson) and of 6.5 GeV for m_W = 15 GeV. Alternatively its coupling is extremely weak.