Scanning tunneling microscopy observation of copper-phthalocyanine molecules on Si(100) and Si(111) surfaces

Molecules of Cu-phthalocyanine (CuPc) deposited on Si(100) and Si(111) surfaces have been observed by an ultra high vacuum field ion scanning tunneling microscope (FI-STM). On a Si(100) surface, STM images with four-fold symmetry are observed, which reflect the shape of the CuPc molecule. The STM pictures show that CuPc molecules are deposited with the molecular plane parallel to the substrate surface and have three kinds of adsorption configurations on the dimer-row of Si(100). The images of the CuPc are modified by the electronic state of the Si(100) surface. This behavior suggests strong interaction between the molecule and the substrate. The molecular images on the Si(111) surface have a unique bias-voltage dependence. At a sample bias of 1.6 V, the molecule looks transparent by STM, and becomes dark like a vacancy at 1.2 V. From the bias dependence, the electronic interaction between the CuPc molecule and the Si surface is discussed.     

Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy

Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics-a 180 degrees rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Reexchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange.     

Determination of spherosiloxane cluster bonding to Si(100)-2 x 1 by scanning tunneling microscopy

Scanning tunneling microscopy is used to determine the bonding geometry of the spherosiloxane cluster, H(8)Si(8)O(12) , on Si(100)-2 x 1. The images obtained are consistent with monovertex bonding to the Si(100)-2 x 1 surface via activation of a single Si-H bond. Filled and empty state images show good agreement with calculations of the electron density distribution of the cluster as well as the Psi(2) highest occupied molecular orbital and lowest unoccupied molecular orbital surface plots of the cluster.     

Adsorption of pyrimidine molecules on Pd(110) observed by scanning tunneling microscopy

Adsorbed states of pyrimidine molecules on Pd(110) have been studied by a scanning tunneling microscope (STM). The pyrimidine molecules are preferentially adsorbed on terraces, not at steps. The isolated pyrimidine molecule shows a 0.6 nm × 0.6 nm rectangular shape with two parts of elongated protrusions. Two adsorption sites are observed: on-top site of the Pd[1 0] row and the midway between two [1 0] rows. Pyrimidine molecules show a strong tendency to form dimers even at a low coverage (0.01 ML), indicating that there is an attractive interaction between two adsorbed molecules.     

Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy

The geometric and electronic structures of the surface species on Ge(100) after plasma nitridation were investigated in this study. An electron cyclotron resonance (ECR) plasma source was used to directly nitride Ge(100), and scanning tunneling microscopy and spectroscopy (STM/STS) were employed to study the structures of the nitrided surface. Nitridation at room temperature generated a large diversity of adsorbate sites on the surface containing N, O, and displaced Ge atoms, differentiated by annealing between 200 °C and 450 °C. Conversely, nitridation at 500 °C produced Ge–N adsorbate sites which formed ordered and disordered structures on the surface free from oxygen. Density functional theory (DFT) simulations were performed focusing on the ordered nitride structure, and the simulated surface structure showed a good correspondence with the STM data. DFT calculations also found an increase of density of states near the Fermi level on the ordered nitride structure, which is consistent with the Fermi level pinning observed in the STS results. The DFT results predict H-passivation can unpin the Fermi level of the nitrided surface by reducing the dangling bonds and the bond strain, but the residual plasma damage and the low nitridation rate in UHV are challenges to obtain complementary experimental results.     

Investigation of the (111) surface of P-doped Si by scanning tunneling microscopy

Received: 27 March 1998     

STM characterisation of organic molecules on H-terminated Si(111)

We present the first high resolution STM images of organic molecules on the technological important hydrogen terminated silicon surface. Ordered layers of PTCDA and PTCDI were prepared on this surface by organic molecular beam epitaxy. The submolecular contrast of these molecules on Si(111)/H obtained in the high resolution images agrees with the corresponding images on HOPG and MoS₂ substrates.     

Ag growth on Si(111) with an Sb surfactant investigated by scanning tunneling microscopy

We have investigated a room-temperature growth mode of ultrathin Ag films on a Si(111) surface with an Sb surfactant using STM in a UHV system. On the Sb-passivated Si surface, small sized islands were formed up to 1.1 ML. Flat Ag islands were dominant at 2.1 ML, coalescing into larger islands at 3.2 ML. Although the initial growth mode of Ag films on the Sb-terminated Si(111) surface was Volmer-Weber (island growth), the films were much more uniform than Ag growth on clean (Si(111) at the higher coverages. From the analysis of STM images of Ag films grown with and without an Sb surfactant, the uniform growth of Ag films using an Sb surfactant appears to be caused by the kinetic effects of Ag on the preadsorbed Sb layer. Our STM results indicated that Sb suppresses the surface diffusion of Ag atoms and increases the Ag-island density. The increased island density is believed to cause coalescence of Ag islands at higher coverages of Ag, resulting in the growth of atomically flat and uniform Ag islands on the Sb surfactant layer.     

When scanning tunneling microscopy gets the wrong adsorption site: H on Rh(100)

At low tunneling resistance, scanning tunneling microscopy (STM) images of a Rh(100) surface with adsorbed hydrogen reproducibly show protrusions in all bridge sites of the surface, leading to a naive interpretation of all bridge sites being occupied with H atoms. Using quantitative low-energy electron diffraction and temperature programmed desorption we find a much lower H coverage, with most H atoms in fourfold hollow sites. Density functional theory calculations show that the STM result is due to the influence of the tip, attracting the mobile H atoms into bridge sites. This demonstrates that STM images of highly mobile adsorbates can be strongly misleading and underlines the importance of additional analysis techniques.