Inversion of spin photocurrent due to resonant transmission

We report on the inversion of spin-dependent photocurrent via interface localized states formed at the interface of an Fe/n-AlGaAs/GaAs quantum well heterostructure by means of an optical spin orientation technique. A careful adjustment of the excitation photon energy, which is determined by a separate analysis of electroluminescence spectra under a spin injection condition, enables us to explore the spin-dependent characteristics of photoelectron transmission from the quantum well into Fe. The bias dependence of the spin-dependent photocurrent shows clear spikelike features at the voltage which is compatible with the formation of the interface localized resonant states in the Schottky depletion layer.     

Observation of the conduction electron spin polarization in the Ag spacer of a Fe/Fg/Fe trilayer

The spatially oscillating electron spin polarization in the Ag spacer of a 4 nm Fe/20 nmAg/4 nm Fe(001) epitaxial trilayer has been determined by means of low energy muon spin rotation. It oscillates with the same period as the interlayer exchange coupling, but shows a much weaker attenuation at large distances x from the interface. The measured magnetization profile from the inner 14 nm of the spacer is described by an oscillating polarization decaying as x(-0.8(1)). This unusual behavior may arise from a full confinement of electron states within the spacer.     

缀饰格子中时间反演对称破缺的量子自旋霍尔效应

<正>研究了缀饰格子中的量子自旋霍尔效应,模型中同时考虑了Rashba自旋轨道耦合和交换场的作用.缀饰格子具有简立方对称性,以零能平带和单狄拉克锥结构为主要特点.在缀饰格子中,不论是实现量子自旋霍尔效应还是量子反常霍尔效应,都需要一个不为零的内禀自旋轨道耦合作用来打开一个完全的体能隙,这与石墨烯等六角格子模型有着很大的不同.在交换场破坏了时间反演对称性的情况下,以自旋陈数为标志的量子自旋霍尔效应仍然能够存在,边缘态和极化率的相关结果也证明了这一结论.结果表明自旋陈数比z2拓扑数在表征量子自旋霍尔效应方面有着更广泛的适用范围,相应的结论为利用磁场控制量子自旋霍尔效应提出了一个理论模型和依据.     

Size dependence of current spin polarization through superconductor/ferromagnet nanocontacts

The spin polarization P of the transport current through the interface between superconducting Al and ferromagnetic Fe is determined by means of Andreev reflection at nanostructured point contacts. We observe a systematic decrease of P with decreasing contact resistance. Our data provide evidence for the reduction of P by spin-orbit scattering and thus establish a link between density of states and transport spin polarizations.     

单层GaSe表面Fe原子吸附体系电子自旋性质调控

Ⅲ族金属单硫化物因其优越的光电和自旋电子特性而备受关注,实现对其自旋性质的有效调控是发展器件应用的关键.本文采用密度泛函理论系统地研究了GaSe表面Fe原子吸附体系的几何构型及自旋电子特性.Fe/GaSe体系中Fe吸附原子与最近邻Ga,Se原子存在较强的轨道耦合效应,使体系呈现100%自旋极化的半金属性.其自旋极化贡献主要来源于Fe-3d电子的转移及Fe-3d,Se-4p和Ga-4p轨道杂化效应.对于Fe双原子吸附体系,两Fe原子之间的自旋局域导致原本从Fe转移至GaSe的自旋极化电荷量减少,从而费米能级附近的单自旋通道转变为双自旋通道,费米能级处的自旋极化率转变为0.研究结果揭示了Fe_n/GaSe吸附体系自旋极化特性的形成和转变机制,可为未来二维自旋纳米器件的设计与构建提供参考.     

Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.     

Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions

In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.     

RKKY ferromagnetism with Ising-like spin states in intercalated Fe(1/4)TaS2

We investigated the magnetic nature of Fe(1/4)TaS2 using x-ray absorption spectroscopy, photoemission spectroscopy, and first principles band calculations. The results show a large unquenched orbital magnetic moment (～1.0 μ(B)/Fe) at intercalated Fe sites, resulting in a gigantic magnetic anisotropy (H(A)?60 T). The magnetic coupling is well understood in terms of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, suggesting a novel RKKY ferromagnet with Ising-type spin states. We also found that this indirect exchange coupling between the neighboring Fe spins is ferromagnetic and maximized at the Fe-Fe distance of 2×2 superstructure.     

Transverse spin current in the s-wave/p-wave Josephson junction

We report a theoretical study on spin transport in the hybrid Josephson junction composed of singlet s-wave and triplet p-wave superconductor. The node of the triplet pair potential is considered perpendicular to the interface of the junction. Based on a symmetry analysis, we predict that there is no net spin density at the interface of the junction but instead a transverse mode-resolved spin density can exist and a nonzero spin current can flow transversely along the interface of the junction. The predictions are numerically demonstrated by means of the lattice Matsubara Green's function method. It is also shown that, when a normal metal is sandwiched in between two superconductors, both spin current and transverse mode-resolved spin density are only residing at two interfaces due to the smearing effect of the multimode transport. Our findings are useful for identifying the pairing symmetry of the p-wave superconductor and generating spin current.     

Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ～37% and ～85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is estimated to be ～0.5 ps and it is governed by transitions between light and heavy hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5?ns below 150?K. Theoretical analysis of the spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime of electrons.     

Magnetic proximity effect induced spin splitting in two-dimensional antimonene/Fe3GeTe2 van der Waals heterostructures

Recently, two-dimensional van der Waals (vdW) magnetic heterostructures have attracted intensive attention since they can show remarkable properties due to the magnetic proximity effect. In this work, the spin-polarized electronic structures of antimonene/Fe₃GeTe₂ vdW heterostructures were investigated through the first-principles calculations. Owing to the magnetic proximity effect, the spin splitting appears at the conduction-band minimum (CBM) and the valence-band maximum (VBM) of the antimonene. A low-energy effective Hamiltonian was proposed to depict the spin splitting. It was found that the spin splitting can be modulated by means of applying an external electric field, changing interlayer distance or changing stacking configuration. The spin splitting energy at the CBM monotonously increases as the external electric field changes from -5 V/nm to 5 V/nm, while the spin splitting energy at the VBM almost remains the same. Meanwhile, as the interlayer distance increases, the spin splitting energies at the CBM and VBM both decrease. The different stacking configurations can also induce different spin splitting energies at the CBM and VBM. Our work demonstrates that the spin splitting of antimonene in this heterostructure is not singly dependent on the nearest Sb—Fe distance, which indicates that magnetic proximity effect in heterostructures may be modulated by multiple factors, such as hybridization of electronic states and the local electronic environment. The results enrich the fundamental understanding of the magnetic proximity effect in two-dimensional vdW heterostructures.     

Direct observation of a bulklike spin moment at the Fe/GaAs(100)-4x6 interface

We have used x-ray magnetic circular dichroism, which offers a unique capability to give element specific information at submonolayer sensitivity, to determine the spin and orbital magnetic moments at the Fe/GaAs(100) interface. The wedge samples, grown by molecular beam epitaxy at room temperature, consisted of 0.25-1 monolayer (ML) Fe on GaAs(100)-4x6 capped with 9 ML Co and have shown Fe spin moments of (1.84-1.96)micro(B) and a large orbital enhancement. Our results demonstrate unambiguously that the Fe/GaAs(100)-4x6 interface is ferromagnetic with a bulklike spin moment, which is highly promising for spintronics applications.     

磁场中的拓扑绝缘体边缘态性质

用数值方法研究了拓扑绝缘体薄膜体系在外加垂直磁场 作用下其边缘态的性质. 磁场的加入通过耦合k+eA, 即Peierls势替换关系和 该作用导致的Zeeman交换场体现在哈密顿量中. 考虑窄条圆环状结构的二维InAs/GaSb/AlSb薄膜量子阱材料, 当其处于拓扑非平庸状态, 即量子自旋霍尔态时, 会出现受时间反演对称性保护的两支简并边缘态, 而在垂直磁场的作用下, 时间反演对称性被破坏, 这时能带将形成一条条的朗道能级, 原来简并的两支边缘态也会分开到朗道能级谱线的两侧, 从电子态密度的空间分布情况则可以看到边缘态分别局域在材料的两个边界. 随着磁场的增大, 位于同一边界上的不同 自旋极化的边缘态将出现分离: 一支仍然局域在边缘, 另一支则随外加磁场的增加而有逐渐演化到材料内部的趋势. 文中还计算了同一边界上的两支边缘态之间的散射, 结果表明由于两个边缘态在空间发生分离, 相互之间的散射被很大的压制, 得到了其散射随磁场增加没有明显变化的结论, 所以磁场并不会增强散射过程, 也没有破坏体拓扑材料的性质, 说明了量子自旋霍尔态在没有时间反演对称的情况下也可以有较强的稳定性.     

Nonlinear dynamics of semiclassical spin in a time-dependent magnetic field

The dynamics of magnetic nanoclusters (or molecules) with a large spin in a magnetic field whose strength varies in proportion to time is analyzed. Such a field breaks the symmetry relative to rotations through 2π, as well as clockwise and counterclockwise rotations, and induces a number of new coherent quantum effects in the spin dynamics, such as the formation of a band energy spectrum with continuous spin states or the emergence of “Bloch” oscillations in spin precession and interband Zener tunneling. Bloch oscillations are manifested in experiment as equidistant identical jumps on the magnetization curve. The interband Zener tunneling gives rise to additional jumps and peaks on the susceptibility of the system.     

High spin band structure in 139Nd

High-spin states in 139Nd nucleus have been reinvestigated with the reaction 128Te (16O, 5n) at a beam energy of 90 MeV. The level scheme has been expanded with spin up to 47/2 h. At the low spin states,the yrast collective structure built on the vh(-1)(11/2) multiplet shows a transitional shape with γ≈32° according to calculations of the triaxial rotor-plus-particle model. Three collective oblate bands with γ～-60° at the high spin states were identified for the first time. A band crossing is observed around hw ～0.4 MeV in one oblate band based on the 25/2- level.     

Quantum spin Hall effect in graphene

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.     

Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT and tunnel magneto resistance (TMR) behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where the heavily restrained thermal conductance should be responsible for. Thermo-STT in Fe/Vac/Fe MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness.     

Effect of vacancies on the spin density waves onset in Fe/Cr superlattices

The spin density wave’s onset in Cr based superlattices is considered within proximity of Fe interlayer boundaries and the effect of randomly located vacancies in Cr monolayers is examined. The study is performed for Fe/Cr, Fe/Cr/V superlattices with odd and even number of Cr monolayers. It is shown that the number of Cr monolayer determines the spin density wave’s nodes onset in the perfect Fe/Cr super lattices. Pinning of Cr magnetic moments on vacancies destroys this determination and leads to appearance or disappearance of nodes.     

Gate-controlled spin injection at LaAlO3/SrTiO3 interfaces

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the LaAlO3/SrTiO3 interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the LaAlO3 strongly coupled to the 2-DES by tunneling transfer.     

Quantum states and linear response in dc and electromagnetic fields for the charge current and spin polarization of electrons at the Bi/Si interface with the giant spin-orbit coupling

An expansion of the nearly free-electron model constructed by Frantzeskakis, Pons, and Grioni [1] describing quantum states at the Bi/Si(111) interface with the giant spin-orbit coupling is developed and applied for the band structure and spin polarization calculation, as well as for the linear response analysis of the charge current and induced spin caused by a dc field and by electromagnetic radiation. It is found that the large spin-orbit coupling in this system may allow resolving the spin-dependent properties even at room temperature and at a realistic collision rate. The geometry of the atomic lattice combined with spin-orbit coupling leads to an anisotropic response for both the current and spin components related to the orientation of the external field. The in-plane dc electric field produces only the in-plane components of spin in the sample, while both the in-plane and out-of-plane spin components can be excited by normally propagating electromagnetic wave with different polarizations.