Direct observation of domain-wall configurations transformed by spin currents

Direct observations of current-induced domain-wall propagation by spin-polarized scanning electron microscopy are reported. Current pulses move head-to-head as well as tail-to-tail walls in submicrometer Fe20Ni80 wires in the direction of the electron flow, and a decay of the wall velocity with the number of injected current pulses is observed. High-resolution images of the domain walls reveal that the wall spin structure is transformed from a vortex to a transverse configuration with subsequent pulse injections. The change in spin structure is directly correlated with the decay of the velocity.     

The increase of the spin-transfer torque threshold current density in coupled vortex domain walls

We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.     

Direct observation of domain wall scattering in patterned Ni80Fe20 and Ni nanowires by current-voltage measurements

We present measurements of domain wall resistivity, pinned by nanoconstrictions in single layer ferromagnetic wires of Ni80Fe20 and Ni. Unpinning domain walls from the constriction by current-induced switching allows for an unambiguous measurement of their resistivity changes, namely, 1.7% in Ni80Fe20 and 1.82% in Ni and both positive, which supports the theory of spin-dependent impurity scattering. By deriving an empirical relation for the various constriction widths, the large percentage changes of resistivity in ballistic nanocontacts are reproduced, showing a correlation between domain wall magnetoresistance and ballistic magnetoresistance.     

Reversal modes in asymmetric Ni nanowires

We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed.     

Hall micromagnetometry of domain-wall depinning in Permalloy nanowires

Experimental results of field-induced domain-wall depinning in Permalloy nanowires of submicron width and thicknesses between 10 and 30 nm are presented. Single domain walls pinned at notches in nanowires are detected by Hall micromagnetometry. The technique allows to study domain-wall propagation and depinning non-invasively in the temperature range between 2 and 50 K. The influence of sample thickness on domain-wall propagation properties is investigated. In nanowires with two notches of different pinning strength single domain walls are pinned in a toggle mode. The temperature dependence of domain-wall depinning fields in two-notch wires is analyzed.     

Relationship between nonadiabaticity and damping in permalloy studied by current induced spin structure transformations

By direct imaging we determine spin structure changes in Permalloy wires and disks due to spin transfer torque as well as the critical current densities for different domain wall types. Periodic domain wall transformations from transverse to vortex walls and vice versa are observed, and the transformation mechanism occurs by vortex core displacement perpendicular to the wire. The results imply that the nonadiabaticity parameter beta does not equal the damping alpha, in agreement with recent theoretical predictions. The vortex core motion perpendicular to the current is further studied in disks revealing that the displacement in opposite directions can be attributed to different polarities of the vortex core.     

Cyclic resistance change in perpendicularly magnetized Co/Ni nanowire induced by alternating current pulse injection

We report on cyclic anisotropic magnetoresistance change induced by current pulse injection in perpendicularly magnetized Co/Ni nanowire. By alternating the polarity of the injection pulse, domain walls (DWs) can be deterministically created and annihilated within the nanowire. The injection induces a combined effect of spin transfer torque and Oersted field that leads to simultaneous creation and driving of DWs in the nanowire. DW created by single pulse injection exhibits a fixed depinning field. For multi-pulse injection, the depinning field increases and this is ascribed to the formation of DWs with opposite chirality.     

Electric manipulation of spin relaxation using the spin Hall effect

Using the spin Hall effect, magnetization relaxation in a Ni_{81}Fe_{19}/Pt film is manipulated electrically. An electric current applied to the Pt layer exerts spin torque on the entire magnetization of the Ni81Fe19 layer via the macroscopic spin transfer induced by the spin Hall effect and modulates the magnetization relaxation in the Ni81Fe19 layer. This method allows us to tune the magnetization dynamics regardless of the film size without applying electric currents directly to the magnetic layer.     

Detection of current-induced resonance of geometrically confined domain walls

Magnetic domain walls are found to exhibit quasiparticle behavior when subjected to geometrical variations. Because of the spin torque effect such a quasiparticle in a potential well is excited by an ac current leading to a dip in the depinning field at resonance for current densities as low as 2 x 10(10) A/m2. Independently the resonance frequencies of transverse walls and vortex walls are determined from the dc voltage that develops due to a rectifying effect of the resonant domain wall oscillation. The dependence on the injected current density reveals a strongly nonharmonic oscillation.     

Novel trends in the study of magnetically soft Co-based amorphous glass-coated wires

An overview of the recent progress and state-of-the-art results in the investigation of the amorphous glass-coated wires with nearly zero magnetostriction is presented. These versatile microwires display enhanced soft magnetic properties, which make them suitable as sensing elements in various sensors for biomedical and automotive applications. Current results on their magnetic characteristics refer to a major refinement of their core-shell magnetic structure by taking into account the interdomain wall and to the thorough analysis of the magnetization within the outer shell. Experimental techniques such as giant magneto-impedance, magneto-resistance, and magneto-optical Kerr effect measurements are employed to prove the outcome of the theoretical calculations. The impact of the magnetic structure of the outer shell on the propagation of domain walls in bistable amorphous wires is analyzed. Very recent results on the magnetization process in nearly zero magnetostrictive amorphous glass-coated wires with submicron dimensions are also reviewed.     

Theory of current-driven domain wall motion: spin transfer versus momentum transfer

A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current has two effects: one is momentum transfer, which is proportional to the charge current and wall resistivity (rho(w)); the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall motion is determined by the hard-axis magnetic anisotropy, except for the case of very strong pinning. For thin walls, as in nanocontacts and magnetic semiconductors, the momentum-transfer effect dominates, and the threshold current is proportional to V(0)/rho(w), V0 being the pinning potential.     

Magnetic anisotropies and coupling mechanisms in Fe/Mo(110) nanostripes

Using low-temperature (5 K) spin-polarized scanning tunneling microscopy, we have studied the morphology and magnetic properties of monolayer (ML) and double layer (DL) thick Fe nanowires grown by step flow on a Mo(110) single crystal. Magnetic contrast has been obtained using tungsten tips covered by Au/Co thin films. We find that the DL Fe nanowires, similarly to ML Fe nanowires, are perpendicularly magnetized. Because of the dipolar coupling, separated DL Fe nanowires are antiferromagnetically coupled. DL wires that are touching at step edges are ferromagnetically ordered due to direct exchange coupling. We measured the widths of the magnetic domain walls in the ML and DL Fe nanowires. The domain wall width increases with the thickness of Fe.     

The Influence of Magnetic Interaction on Magnetic Structure of Domain Walls in Metallic Ferromagnetic Nanofilms

Russian Physics Journal - Using transmission electron microscopy, the structure of domain walls is investigated in Fe0.2–Ni0.8 alloy and nickel nanofilms. It is shown that it is controlled...     

磁场退火对Co基熔体抽拉丝巨磁阻抗效应的影响

对Co基熔体抽拉非晶丝进行了普通炉内退火和不同磁场强度（500 Oe,1600 Oe,4000 Oe）下的横向和纵向磁场退火,利用HP4192阻抗分析仪和Lakeshore7407VSM分析了退火态样品的巨磁阻抗（GMI）效应和软磁性能.研究结果表明,纵向磁场降低了环向各向异性,纵向磁场退火样品GMI效应降低且GMI曲线为单峰,最大阻抗变化率ΔZ/Z为131%,磁场响应灵敏度为7%/Oe;而横向磁场提高了环向畴体积,增加了环向各向异性场,导致退火样品GMI曲线随频率升高由单峰转 关键词： 非晶丝 巨磁阻抗效应 退火     

The interaction of transverse domain walls

The interaction between transverse domain walls is calculated analytically using a multipole expansion up to third order. Starting from an analytical expression for the magnetization in the wall, the monopole, dipole, and quadrupole moments are derived and their impact on the interaction is investigated using the surface and volume charges. The surface charges are important for the dipole moment while the volume charges constitute the monopole and quadrupole moments. For domain walls that are situated in different wires it is found that there is a strong deviation from the interaction of two monopoles. This deviation is caused by the interaction of the monopole of the wall in the first wire with the dipole of the wall in the second wire and vice versa. The dipole-dipole and the quadrupole-monopole interactions are found to be also of considerable size and non-negligible. A comparison with micromagnetic simulations shows a good agreement.     

Role of anisotropy on the domain wall properties of ferromagnetic nanotubes

In this paper we investigate the role of magneto-crystalline anisotropy on the domain wall (DW) properties of tubular magnetic nanostructures. Based on a theoretical model and micromagnetic simulations, we show that either cubic or uniaxial magneto-crystalline anisotropies have some influence on the domain wall properties (wall size, propagation velocity and energy barrier) and then on the overall magnetization reversal mechanism. Besides the characterization of the transverse and vortex domain wall sizes for different anisotropies, we predict an anisotropy dependent transition between the occurrence of transverse and vortex domain walls in tubular nanowires. We also discuss the dynamics of the vortex DW propagation gradually increasing the uniaxial anisotropy constant and we found that the average velocity is considerably reduced. Our results show that different anisotropies can be considered in real samples in order to manipulate the domain wall behavior and the magnetization reversal process.     

Domain wall orientation in magnetic nanowires

Scanning tunneling microscopy reveals that domain walls in ultrathin Fe nanowires are oriented along a certain crystallographic direction, regardless of the orientation of the wires. Monte Carlo simulations on a discrete lattice are in accordance with the experiment if the film relaxation is taken into account. We demonstrate that the wall orientation is determined by the atomic lattice and the resulting strength of an effective exchange interaction. The magnetic anisotropy and the magnetostatic energy play a minor role for the wall orientation in that system.     

Surface composition effects on martensitic phase transformations in nickel aluminium nanowires

Atomistic simulations are utilized to quantify the effects of surface composition on stress-induced B2 to body centred tetragonal (BCT) martensitic phase transformations in intermetallic nickel aluminium (NiAl) nanowires. The simulations show that the phase transformation is observed in all considered cases, regardless of the material composition of the transverse {100} surfaces of the initially B2 wires. The results indicate that, for ?100? oriented B2 wires with {100} transverse surfaces, the {100} orientation and not the material composition of the {100} surfaces is the dominant factor in controlling the ability of NiAl alloys to undergo martensitic phase transformations at nanometer scales.     

Mechanically driven domain wall movement in magnetoelastic nanomagnets

Magnetic domain walls are fundamental objects arising in ferromagnetic materials, largely investigated both through micromagnetic simulations and experiments. While current- and field-based techniques for inducing domain wall propagation have been widely studied for fundamental understanding and application-oriented purposes, the possibility to manipulate domain walls using mechanical stress in magnetoelastic materials has only recently drawn interest. Here, a complete analytical model describing stress-induced transverse domain wall movement in ferromagnetic nanostripe with variable cross-section is presented. This approach yields a nonlinear integro-differential equation describing the magnetization field. Its numerical implementation, based on the nonlinear relaxation method, demonstrates the possibility to precisely control the position of a domain wall through mechanical action.     

Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

Single (Co/Pt)_{7} multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180 degrees domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of DeltaR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang [Phys. Rev. Lett. 79, 5110 (1997)10.1103/PhysRevLett.79.5110].