高温超导微波延迟线研究进展

介绍了高温超导微波延迟线的优点及其发展现状,并对直径为2英寸,介电常数为10.2的带状线结构常规金属延迟线进行仿真,并制作出实际电路,并对厚度为1mm MgO基片的高温超导带状线进行了场仿真。     

Tunneling conductance of graphene NIS junctions

We show that, in contrast with conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations is maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for a large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.     

Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν≈1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.     

Confronting the Hartman effect with data from frustrated total internal reflection (FTIR)

Over 40 years ago, Hartman noted that the tunneling time τ of a particle through a barrier becomes independent of width for thick barriers. Lately, the Hartman effect has been seen as a support for superluminal tunneling time. By interpreting the reflection and transmission amplitudes in terms of multiple reflection series, we show that τ is linear in barrier width for thin barriers and may be associated with actual traversal time; for thick barriers, τ saturates to the Hartman value because of the suppression of all but the first term of the series due to the smallness of the tunneling factor. For large widths, τ cannot be identified with the propagation time but may be associated with a time to penetrate to a characteristic depth into the barrier, which is independent of width. We discuss data from frustrated internal reflection experiments, which support this view.     

Magneto-optical studies of ballistic electron transport in single barrier heterostructures

We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.     

Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures

A set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at liquid helium temperatures in the presence of a charged atomic-force microscope tip has been presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.     

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.     

Theoretical aspects of electron transport in modulated structures

In the theory of transport in modulated structures we have studied both transport perpendicular and parallel to the heterojunction interfaces. In perpendicular transport we have investigated models for tunneling through double barriers and find that resonant tunneling and sequential tunneling lead to the same expression for the current as long as the width of the energy distribution of the injected electrons is larger than the width of the resonant level in the diode. We present results for phonon assisted tunneling between two wells in a model which remains valid even when the barrier shrinks and the tunneling probability becomes very high. In parallel transport we show that very satisfactory agreement with extensive measurements of the mobility in modulation doped structures in the whole temperature range from 4 K to 300 K can be obtained if one takes into account the complete quasi-two-dimensional subband structure and all the relevant scattering mechanisms. Having established this we apply this program to systems with more complicated double channel structures, and show how one can tailor the conductivity of a channel in which perpendicular resonant tunneling affects parallel transport.     

The theory of tunneling in normal metal/<Emphasis Type="Italic">d</Emphasis>-type superconductor 2D-structures

A sequential theoretical analysis is performed of tunneling in normal metal/d-type superconductor structures which contain scattering centers in the interlayer between a normal metal and a superconductor. As a result, it is demonstrated that the presence of a scattering center inside an insulator interlayer leads to partial suppression of previously predicted anomalously high values of conductance in the low-voltage region (zero bias anomaly (ZBA)). In so doing, the inclusion of the “interference” term in the current operator (interference of tunneling through a scattering center with direct potential tunneling) results in the suppression of ZBA. The predicted effect is virtually independent both of the position of the scattering center in the interlayer and of the shape of the resonance curve of scattering (which is Lorentzian in the case of resonance tunneling through the scattering center).     

Electro-mechanical behavior of single twisted high-temperature superconducting tape under transverse Lorentz force

In recent years, several cabling methods of high temperature superconducting (HTS) cable have been proposed; e.g., the conductor on a round core cable (CORC), the Roebel assembled coated conductor cable, the helical twisted stacking-tape cable (TSTC) and the twisted-stack slotted core HTS cable (TSSC). These cabling methods allow the high temperature superconducting tapes widely used in the high-field magnets. The single superconducting tape performance under applied loads directly relates to the transport performance of the cable and the choice of the cabling method. In this paper, we investigate the effect of twisting morphology on the electro-mechanical properties of HTS tapes. Particular attention is given to the transverse Lorentz force of a pre-twisted HTS tape. The analytical solution of the deflection of the HTS tape under transverse Lorentz force is derived. Then, the current distribution and AC loss of the tape are calculated by using H-formulation. The effects of twist angle and loading conditions are examined for different HTS tape lengths. The results show that the stiffness resistance ability to Lorentz force of the HTS tape can be increased in several ranges by increasing the twist angle. The twisting structure can also reduce current degradation and AC loss, and thus enhance the transport capacity of HTS tape. This study helps understand the electro-mechanical properties of pre-twisted HTS tapes and provides theoretical reference for the design of novel HTS cable structures.     

窄丝化工艺对第二代高温超导带材临界电流特性的影响

超导带材应用于超导电力设备时,其临界电流特性受外界交变磁场大小和方向的影响,展现出明显的各向异性.为了减小外场对超导带材的影响,本文通过窄丝化工艺将4 mm宽的高温超导带材分切成2 mm宽的高温超导细丝.本文通过冷热循环疲劳测试实验和带材显微观察两个角度相互验证,对2 mm超导细丝临界电流性能做了具体评估.创新性地提出"在窄丝化工艺中引入电镀铜工艺作为过渡来改善超导细丝临界电流特性",通过实验以及显微观察证实"电镀铜工艺能够在超导细丝表面生成铜保护层,有效降低超导细丝临界电流的衰减".本文也为后续超导细丝在复合结构的应用中提供了重要参考.     

冷绝缘高温超导电缆电磁特性计算与分析

为了获得超导电缆电磁特性变化规律,针对冷绝缘高温超导电缆本体的基本结构,采用安培定律推导了超导电缆导体层和屏蔽层自感、互感的计算公式.通过110kV冷绝缘超导电缆的实例计算,研究了超导电缆导体层、屏蔽层的内径、绕向角、绕制方向三个结构参数对电磁特性的影响,总结了电感参数变化规律.     

准TEM高温超导微带线电容等效电路模型及其分电容模型

本文根据高温超导厚膜和薄膜场和电流的分布特点,给出厚膜和薄膜准TEM微带线电容等效电路及分电容表达式.这些表达式的正确性通过三个例子证实.     

Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.     

Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells

The spatial distribution of the wave functions for electrons in a coupled-quantum-well system of GaAs/Al _x Ga_1?x As with triple barriers is discussed. Within the framework of the dielectric continuum model, the dispersion relations of interface optical phonon modes are given. Furthermore, the interaction between an electron and optical phonons and the ternary mixed crystal effect in these structures are investigated in detail. The optical phonon-assisted tunneling (PAT) is studied using the Fermi golden rule to obtain numerically the PAT currents. The results reveal that the interface optical phonons are more important than the confined longitudinal optical phonons. Only one PAT peak does appear when the middle barrier is wide enough or its Al component is high enough, and the peak moves to the higher applied voltage direction, whereas two PAT peaks do appear when the middle barrier is narrow enough or its Al component is low enough.     

Giant proximity effect in cuprate superconductors

Using an advanced molecular beam epitaxy system, we have reproducibly synthesized atomically smooth films of high-temperature superconductors and uniform trilayer junctions with virtually perfect interfaces. We found that supercurrent runs through very thick barriers. We can rule out pinholes and microshorts; this "giant proximity effect" (GPE) is intrinsic. It defies the conventional explanation; it might originate in resonant tunneling through pair states in an almost-superconducting barrier. GPE may also be significant for superconducting electronics, since thick barriers are easier to fabricate.     

Nonequilibrium zero-bias anomaly in disordered metals

We extend the theory of a zero-bias anomaly (ZBA) in the tunneling density of states of a diffusive metallic film to out-of-equilibrium conditions. An effective action describing virtual fluctuations out of equilibrium is derived. The singular behavior of the equilibrium ZBA is smoothed out by real processes of inelastic scattering.     

110kV冷绝缘高温超导电缆本体绝缘设计

对国内第一根基于YBCO涂层导体的110kV冷绝缘高温超导(CD HTS)电缆本体绝缘进行了设计。根据冷绝缘HTS电缆的结构特点,通过分析不同绝缘材料的介电特性,应用电场有限元数值分析模型和理论模型,计算了超导电缆本体电场分布,研究了超导电缆主绝缘厚度与局部放电起始场强的定量化关系,最后给出了110kV冷绝缘HTS电缆主绝缘材料与厚度的设计方案。     

Enhanced spin polarization in an asymmetric magnetic graphene superlattice

The authors investigate the spin-resolved transport through an asymmetrical magnetic graphene superlattice (MGS) consisting of the periodic barriers with abnormal one in height. To quantitatively depict the asymmetrical MGS, an asymmetry factor has been introduced to measure the height change of the abnormal barrier. It is shown that the spin filter effect is strongly enhanced by the barrier asymmetry both in the Klein and the classical tunneling regimes. In the presence of abnormal barrier, the conductance with certain spin direction is suppressed with respect to different tunneling regimes, and thus high spin polarization with opposite sign can be achieved.     

Tunneling versus thermionic emission in one-dimensional semiconductors

This Letter focuses on the role of contacts and the influence of Schottky barriers on the switching in nanotransistors. Specifically, we discuss (i) the mechanism for injection from a three-dimensional metal into a low-dimensional semiconductor, i.e., the competition between thermionic emission and thermally assisted tunneling, (ii) the factors that affect tunneling probability with emphasis on the importance of the effective mass for transistor applications, and (iii) a novel approach that enables determination of barrier presence and its actual height.