原子康普顿轮廓的解析计算

利用变分原理和冲量近似,给出了原子康普顿轮廓的解析计算方法。基于该方法具体导出了第一和第二周期元素各轨道电子的康普顿轮廓解析表达式,并绘制了各轨道电子的康普顿轮廓在Q=0-4范围内的变化情况。通过与文献结果的比较,验证了本文计算方法和结论的可靠性。     

类氢离子的相对论康普顿轮廓（英文）

基于中心场近似得到Dirac径向轨道,并使用恰当的Fourier变换系统计算了类氢离子电子动量分布和康普顿轮廓。以H原子和Xe53+离子为例,探讨了相对论效应和原子核的有限体积效应对单电子康普顿轮廓的影响。同时,详细研究了单电子康普顿轮廓对主量子数n、轨道量子数l、单电子总角动量量子数j和核电荷数Z的依赖关系。结果表明,相对论效应可以扩展康普顿轮廓的分布,并且使给定nl的轨道随着Z的增加分裂得越来越明显。然而,相对论效应也会随着主量子数n和轨道量子数l的增加而减弱。同时,对于nl_j轨道,其康普顿轮廓还具有n-l个平台的结构。另外,原子核的有限体积几乎不会影响H原子和Xe53+离子的康普顿轮廓。The Compton profiles of the electron in the ground and excited states of H-like ions have been calculated systematically with one-electron Dirac radial orbitals by using the proper Fourier transformation. Taking the H atom and Xe53+ ion as examples, the effects of relativity and finite nuclear size on Compton profile have been discussed. Furthermore, the dependence of one-electron Compton profile on the principle quantum number n, orbital quantum number l, angular quantum number j and nuclear charge Z has also been discussed. It is found that the relativistic effect can expand the distribution of the Compton profile and split the orbital more and more obviously for given nl(l=0) as increasing Z. However, the relativistic effect can gradually weaken with the increase of the principal quantum number n and orbital quantum number l. Furthermore, the Compton profile of the orbital with quantum number nl_j has certain number of platforms that is n-l. In addition, the nuclear finite size hardly affects the Compton profile for H atom and Xe53+ ion.     

浅析影响康普顿谱线位置的因素

康普顿散射中影响康普顿谱线位置的因素是十分复杂的,文章主要针对影响康普顿谱线位置的几个因素作了理论探讨,得出影响因素主要在于:电子具有初速度会增大散射波长的改变量;束缚能的存在要减小峰值波长的改变量;双光子散射和二次散射与谱线峰值位置的关系不大,二者对峰值波长的改变是不确定的、复杂的、在连续的范围内变化的.最后对康普顿谱线位置和康普顿轮廓的理论研究和应用前景作了展望.     

第四周期过渡元素的原子解析波函数与能量的计算

本文采用修正ls电子解析波函数的基本思想,用因子(1 f~2r~2)修正3d电子波函数,以六参数解析波函数,对第四周期过渡元素的原子多重态能量进行了系统的变分计算。得到较准确的能量值及径向波函数最佳参数值。与类氢五参数的计算结果进行了比较,讨论了能量改进的原因,各参数的变化规律及其物理意义。     

NO与C2H2的康普顿轮廓研究

基于第三代同步辐射光源, 在20 keV的入射X射线能量下测量了NO与C₂H₂分子的康普顿轮廓. 考虑到本次实验结果在p_z ≈ 0附近的统计精度达到了0.2%, 本文报道的NO和C₂H₂的康普顿轮廓可以作为严格检验理论的实验基准. 除此之外, 还分别采用HF方法及密度泛函方法选用不同的基组计算了NO 与C₂H₂康普顿轮廓. 通过对比实验结果与理论计算, 发现对于NO分子, 加入弥散函数基组理论计算结果与实验符合更好, 说明NO分子基态的电子分布较为弥散. 对于C₂H₂分子, HF方法理论计算的结果与实验符合较好.     

InSb的Li嵌入电压轮廓曲线从头计算

InSb是很有应用前途的Li离子电池非碳类负极材料. 使用基于密 度泛函理论的第一原理赝势法，计算了InSb 在Li嵌入时的125种不同情况下的总能、形成能 以及平衡体积等，进而参考电压轮廓实验曲线，筛选出了若干条理论上可能的反应路径，得到了Li嵌入时的电压轮廓曲线. 结果表明，从体InSb相到Li＿3Sb相之间没有中间经历五个相及五个相以上的反应路径；中间经历一个相的最可能反应过程为Li+In＿4Sb＿4→Li＿1In＿4Sb＿4,11Li+Li＿1In＿4Sb＿4→Li＿12Sb＿4+4In；中间经 历四个相的仅有一条反应路径：Li+In＿4Sb＿4→Li＿1In＿4Sb＿4,2Li+Li＿1In＿4Sb＿4→ Li＿3In＿4Sb＿4,4Li+Li＿3In＿4Sb＿4→Li＿7In＿3Sb＿4+In,3Li+Li＿7In＿3Sb＿4→Li＿10In＿2Sb＿4+In,2Li+Li＿10In＿2Sb＿4→Li＿12Sb＿4+2In. 关键词： InSb Li嵌入 电压轮廓曲线 从头计算     

高温等离子体相对论性平均原子模型中的半解析波函数

半解析求解平均原子模型方法充分利用了已知精确波函数的解析性质,通过对平均原子模型中势函数的数值拟合,就得到仅含一个数值因子的半解析波函数以及相应的能量本征值.本文列出了等离子体中相对论性平均原子模型的诸方程,特别注意方程求解技术和程序设计中的一些细节.与完全数值解以及其他类似模型得到的数值解进行的比较表明,在较高温度条件下半解析结果的精度是相当高的,求解的效率也很高.此外还对物理模型中某些缺陷进行了分析.     

负反馈放大器输入、输出电阻的解析计算

根据电路原理，应用解析方法导出了四种形式负反馈放大器的输入、输出电阻关系式。能全面描述影响输入、输出电阻的电路参数。     

Compton profile of tantalum

The Compton profile of tantalum (Ta) has been measured using IGP type coaxial photon detector. The target atoms were excited by means of 59.54 keV γ-rays from Am-241. The measurements were carried out on a high purity thin elemental foil. The data were recoreded in a 4 K multichannel analyzer. These data duly corrected for various effects are presented and compared with theoretical and measured values. Best agreement with experiment is found for the 5d³6s² electron configuration     

Experimental and theoretical Compton profiles of Be, C and Al

The results of Compton profile measurements, Fermi momentum determinations, and theoretical values obtained from a linear combination of Slater-type orbital (STO) for core electrons in beryllium; carbon and aluminium are presented. In addition, a Thomas-Fermi model is used to estimate the contribution of valence electrons to the Compton profile. Measurements were performed using monoenergetic photons of 59.54 keV provided by a low-intensity Am-241 γ-ray source. Scattered photons were detected at 90° from the beam direction using a p-type coaxial high-purity germanium detector (HPGe). The experimental results are in good agreement with theoretical calculations.     

Optimization of deconvolution in Compton profile measurements

The method of generalized least squares has been used to deconvolute the Compton profile measurements in nickel. The method depends on two arbitrary parameters namely the cut-off parameterK and the damping factor λ. This has been discussed and a method suggested to optimize the damping parameter.     

γ射线在大气中产生康普顿电流的快速计算方法

康普顿电流是激励核电磁脉冲的主要机制。为了提高核电磁脉冲数值模拟中射线产生康普顿电流过程的计算效率,发展了一种射线在均匀大气中产生康普顿电流的快速计算方法。首先通过计算康普顿电子在出射方向上的衰减特征,得到在电子出射方向净电子流与其射程和出射距离的拟合关系,然后结合康普顿散射微分截面,给出单能射线在大气中产生的康普顿电流密度的解析数值计算方法。和蒙特卡罗程序的计算结果比较,用该方法计算得到的电流密度值差异在10％以内,计算速度提高两个量级以上。该计算方法可用于大气中康普顿电流的快速估算。     

改进的Numerov格式用于Rydberg原子结构的计算

为解决原子Rydberg态的数值计算问题,提出一种改进的Numerov算法.利用此算法计算了H原子n=10,20,……90,100各Rydberg态的能级值和平均半径,并与严格理论值进行了比较.研究结果表明,通过选择适当的Numerov格式,可得到所要求精度的能级和波函数.这为Rydberg原子的进一步研究提供了有效的计算方法.     

Compton profile of molybdenum

In this paper we report the experimental Compton profile of polycrystalline molybdenum. The measurements have been made by scattering 59.54 keVγ-rays and are compared with the recent band structure calculation of Janiet al. [4]. These results have also been compared with our calculation based on the renormalized-free-atom model for different 4d-5s configurations. It is found that the present experimental data are relatively in good agreement with the band structure calculation.     

On the use of Fourier-transformed Compton profile for the determination of band occupancies in certain solids

The Pattison-Williams method of using Fourier-transformed Compton profiles for obtaining Fermi momenta in simple metals, is extended to set up a scheme for inferringd orf band occupancies in transition metals, rare earths etc. CP measurements are reported for Ni,α-Mn andβ-Mn and then the new scheme is applied to obtain 3d occupancies in these systems. Some comments on the use of this method for other systems are also made.     

Compton profile study of α-manganese

The results of a Compton profile study on polycrystallineα-Mn are reported. Our measurement are compared with theoretical results computed for different 3d-4s electron configurations within the RFA model. Best agreement between the measured and calculated values is found for 3d ^5·44s ^1·6 configuration. Theoretical Compton profile ofγ-Mn calculated using the same procedure is close to that for bcc phase with similar electron configurations.