Loss and gain in Bloch oscillating super-superlattices: THz Stark ladder spectroscopy

Bloch oscillation in electrically biased semiconductor superlattices offer broadband terahertz gain from DC up to the Bloch frequency or Stark splitting. Useful gain up to 2–3 THz can provide a basis for solid-state electronic oscillators operating at 10 times the frequency of existing devices.A major stumbling block is the inherent instability of the electrically biased doped superlattices to the formation of static or dynamic electric field domains. To circumvent this, we have fabricated super-superlattices in which a large superlattice is punctuated with heavily doped regions. The short superlattice sections have subcritical “nL” products.Room temperature, terahertz photon-assisted transport in short InGaAs/InAlAs superlattice cells allows us to determine the Stark ladder splitting as the superlattice is electrically biased and confirms the absence of electric field domains in short structures.Absorption of radiation from 1.5 to 2.5 THz by electrically biased InAs/AlSb super-superlattices exhibit a crossover from loss to gain as the Stark ladder is opened. Measurements are carried out at room temperature in a novel planar terahertz waveguide defined by photonic band gap sidewalls and loaded with an array of electrically biased super-superlattices. The frequency-dependent crossover voltage indicates 80% participation of the super-superlattice.     

电场调谐InAs单量子点的发光光谱

采用稳态和时间分辨发光光谱,研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加,观察到量子点中激子发光的Stark 效应.通过选择不同波长的激光线激发量子点样品,发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致,而激子寿命的增加源于电场导致激子的Stark效应. 关键词： InAs单量子点 Stark效应 电子-空穴分离     

静电场作用下双势阱分子隧道效应的猝灭及能级裂距的非线性特性研究

讨论了在静电场作用下，双势阱分子中波函数随外加静电场定域的动态过程，以及能级裂距与外加静电场的关系.证明了静电场作用后，能级裂距既受隧道效应的影响，又受外加静电场的影响.所加静电场较小时与外场强度呈非线性关系，当外加静电场较大时，Stark效应对能级裂距的影响占了主导地位，使能级裂距随外加静电场线性地增大. 关键词： 双势阱 静电场 隧道效应 能级裂距     

Electrical tuning of single nitrogen-vacancy center optical transitions enhanced by photoinduced fields

We demonstrate precise control over the zero-phonon optical transition energies of individual nitrogen-vacancy (NV) centers in diamond by applying multiaxis electric fields, via the dc Stark effect. The Stark shifts display surprising asymmetries that we attribute to an enhancement and rectification of the local electric field by photoionized charge traps in the diamond. Using this effect, we tune the excited-state orbitals of strained NV centers to degeneracy and vary the resulting degenerate optical transition frequency by >10 GHz, a scale comparable to the inhomogeneous frequency distribution. This technique will facilitate the integration of NV-center spins within photonic networks.     

Estimation of built-in dipole moment in InAs quantum dots

We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300 K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation.     

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment

The nature of the confined electronic states in InAs/GaAs self-assembled quantum dots is studied using photocurrent spectroscopy measured as a function of applied electric field. A field asymmetry of the quantum confined Stark effect is observed, consistent with the dots possessing a permanent dipole moment. The sign of this dipole indicates that for zero field the hole wave function lies above that of the electron, in disagreement with the predictions of all recent calculations. Comparison with a theoretical model demonstrates that the experimentally determined alignment of the electron and hole can only be explained if the dots contain a non-zero and non-uniform Ga content.     

Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit strong hole localization even with vanishing separation between the dots, and a nonparabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures. Our study based on an eight-band strain-dependent k x p Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.     

Electric field effects on an optically-pumped HCOOH FIR laser and Zeeman laser theory

Electric field effects have been investigated on the output power of six far-infrared (FIR) laser lines from H¹²COOH optically-pumped by a CO₂ laser with its polarization arranged perpendicular to the Stark field. Optoacoustic signals observed on the pump lines were hardly affected by the applied electric field up to 0.6 kV/cm. By neglecting the electric field effects on the pump transitions, Zeeman laser theory has been applied to the FIR laser transitions. Numerical calculation predicts the observed FIR output power as a function of electric field. Experessions for oscillation frequency and intensity in homogeneous limit are given, which may be applicable to any FIR Stark laser so far as the pump transition is free from electric field effects.     

Electrostatic spin crossover in a molecular junction of a single-molecule magnet Fe{2}

Spin crossover by means of an electric bias is investigated by spin-polarized density-functional theory calculations combined with the Keldysh nonequilibrium Green's technique in a molecular junction, where an individual single-molecule magnet Fe{2}(acpybutO)(O{2}CMe)(NCS){2} is sandwiched between two infinite Au(100) nanoelectrodes. Our study demonstrates that the spin crossover, based on the Stark effect, is achieved in this molecular junction under an electric bias but not in the isolated molecule under external electric fields. The main reason is that the polarizability of the molecular junction has an opposite sign to that of the isolated molecule, and thus from the Stark effect the condition for the spin crossover in the molecular junction is contrary to that in the isolated molecule.     

Investigations on ionic processes and dynamics in the sheath region of helium and hydrogen discharges by laser spectroscopic electric field measurements

Temporally and spatially resolved measurements of the electric field distribution in the sheath region of RF and dc discharges provide a detailed insight into the sheath and ion dynamics. The electric field is directly related to the sheath ion and electron densities, the sheath voltage, and the displacement current density. Under certain assumptions also the electron and ion conduction current densities at the electrode, the ion current density into the sheath from the plasma bulk, the ion energy distribution function, and the power dissipated in the discharge can be inferred. Furthermore, the electric field distribution can give an indication of the collision-induced conversion between different ion species in the sheath. Laser spectroscopic techniques allow the noninvasive in situ measurement of the electric field with high spatial and temporal resolution. These techniques are based on the spectroscopic measurement of the Stark splitting of Rydberg states of helium and hydrogen atoms. Two alternative techniques are applied to RF discharges at 13.56 MHz in helium and hydrogen and a pulsed dc discharge in hydrogen. The measured electric field profiles are analyzed, and the results discussed with respect to the ion densities, currents, energies, temporal dynamics and species composition. Received: 26 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明：电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

Yb原子高激发态的斯塔克光谱

采用ππ偏振激光，通过两步激发和光电离方法，在０－１５４Ｖ／ｃｍ电场范围内，测定了Ｙｂ原子ｎ－１８附近ｍ＝０的斯塔克光谱，首次把包含斯塔克效应的能量矩阵对角化方法推广到Ｙｂ原子，所获得的理论斯塔克图与实验结果基本符合，观察到低场中斯塔克簇随电场增加呈现线性结构以及＾１Ｐ１态与斯塔克簇在抗交叉过程中振子强度发生转移的现象，讨论了结构与量子亏损的关系。     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

Dielectric response enhancement in the current carrying CDW state

The dc electric field dependence of the low frequency dielectric constant was investigated in the linear chain compound orthorhombic TaS₃. While the dielectric constant is barely effected by an applied dc field below the threshold field of the nonlinear conduction, in the current carrying state a large enhancement is observed. Inductive response at the narrow band noise frequency was also detected.     

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E_e-hh) and electron-light-hole (E_e-lh) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schrödinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges.     

Stark shift and dissociation process of an ionized donor bound exciton in spherical quantum dots

The effect of an electric field on the ground state energy of an exciton bound to an ionized donor (D⁺, X) was studied in CdSe spherical quantum dots where quantum confinement is described by an infinitly deep potential. Calculations have been performed in the framework of the effective mass approximation using a variational method by choosing an appropriate sixty-terms wave function taking into account different interparticles correlations and symetry distorsion induced by the electric field. It appears that the Stark shift is significant even for low fields and depends strongly of spherical dot sizes. The competition between the confinement effect and the Stark effect is discussed as function of the spherical dot size and the applied electric field strength. The (D⁺, X) Stark shift is estimated and its behavior is discussed as a function of the dot radius and electric field strength. The electron and hole average distances have also been calculated and the role of the ionized donor in the excitonic dissociation is established.     

Current Oscillation and dc-Voltage-Controlled Chaotic Dynamics in Semiconductor Superlattices

We report a detailed theoretical study of current oscillation and dc-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superlattice is biased at the negative differential velocity region, current self-oscillation is observed with proper doping concentration. The current oscillation mode and oscillation frequency can be affected by the dc voltage bias, doping density, and magnetic field. When an ac electric field with fixed amplitude and frequency is also applied to the system, different nonlinear properties show up in the external circuit with the change of dc voltage bias. We carefully study these nonlinear properties with different chaos-detecting methods.     

Linear Stark shift in dressed atoms as a signal to measure a nuclear anapole moment with a cold-atom fountain or interferometer

We demonstrate theoretically the existence of a linear dc Stark shift of the individual substates of an alkali atom in its ground state, dressed by a circularly polarized laser field. It arises from the electroweak nuclear anapole moment violating P but not T. It is characterized by the pseudoscalar xi k wedge E x B involving the photon angular momentum and static electric and magnetic fields. We derive the relevant left-right asymmetry with its complete signature in a field configuration selected for a precision measurement with cold-atom beams. The 3, 3 --> 4, 3 Cs transition frequency shift amounts to 7 microHz for a laser power of approximately 1 kW at 877 nm, E=100 kV/cm and B approximately > 0.5 G.     

Anisotropic exciton Stark shift in hemispherical quantum dots

The exciton Stark shift and polarization in hemispherical quantum dots(HQDs) each as a function of strength and orientation of applied electric field are theoretically investigated by an exact diagonalization method. A highly anisotropic Stark redshift of exciton energy is found. As the electric field is rotated from Voigt to Faraday geometry, the redshift of exciton energy monotonically decreases. This is because the asymmetric geometric shape of the hemispherical quantum dot restrains the displacement of the wave function to the higher orbital state in response to electric field along Faraday geometry. A redshift of hole energy is found all the time while a transition of electron energy from this redshift to a blueshift is found as the field is rotated from Voigt to Faraday geometry. Taking advantage of the diminishing of Stark effect along Faraday geometry, the hemispherical shapes can be used to improve significantly the radiative recombination efficiency of the polar optoelectronic devices if the strong internal polarized electric field is along Faraday geometry.     

Dependence of space charge field and gain coefficient on the applied electric field in photorefractive materials

Intensity dependent space charge field and gain coefficient in the photorefractive medium due to the two interfering beams have been calculated by solving the material rate equations in presence of externally applied dc electric field. The gain coefficient has been studied with respect to variations in the input intensity, modulation depth, concentration ratio and normalized diffusion field in the absence and presence of the externally applied dc electric field. Space charge field has also been computed by varying the intensity ratio in the presence and absence of the externally applied dc electric field. It has been found that the rate of change of the space charge field with the normalized dc field decreases with the increasing intensity ratio for different values of the normalized diffusion field. It has also been found that the externally applied dc electric field has appreciable effect only when it is larger than the diffusion field.