Stability and diffusion properties of self-interstitial atoms in tungsten:a first-principles investigation

Employing a first-principles method based on the density function theory,we systematically investigate the structures,stability and diffusion of self-interstitial atoms(SIAs) in tungsten(W).The <111> dumbbell is shown to be the most stable SIA defect configuration with the formation energy of ~9.43 eV.The on-site rotation modes can be described by a quite soft floating mechanism and a down-hill "drift" diffusion process from <110> dumbbell to <111> dumbbell and from <001> dumbbell to <110> dumbbell,respectively.Among different SIA configurations jumping to near neighboring site,the <111> dumbbell is more preferable to migrate directly to first-nearest-neighboring site with a much lower energy barrier of 0.004 eV.These results provide a useful reference for W as a candidate plasma facing material in fusion Tokamak.     

Stability of concentration-related self-interstitial atoms in fusion material tungsten

Based on the density functional theory, we calculated the structures of the two main possible self-interstitial atoms(SIAs) as well as the migration energy of tungsten(W) atoms. It was found that the difference of the 110 and 111 formation energies is 0.05–0.3 e V. Further analysis indicated that the stability of SIAs is closely related to the concentration of the defect. When the concentration of the point defect is high, 110 SIAs are more likely to exist, 111 SIAs are the opposite. In addition, the vacancy migration probability and self-recovery zones for these SIAs were researched by making a detailed comparison. The calculation provided a new viewpoint about the stability of point defects for selfinterstitial configurations and would benefit the understanding of the control mechanism of defect behavior for this novel fusion material.     

Ab initio pseudopotential study of vacancies and self-interstitials in hcp titanium

By means of an ab initio plane-wave pseudopotential method, monovacancy, divacancy and self-interstitials in hcp titanium are investigated. The calculated monovacancy formation energy is 1.97 eV, which is in excellent agreement with other theoretical calculations, and agrees qualitatively with published experimental results. The relaxation of the atoms around a single vacancy is observed to be small. Two divacancy configurations, the in-plane and the off-plane, have also been shown to be equally stable. With regards to the interstitials, of the eight configurations studied, two (octahedral and basal octahedral) have relatively lower formation energies and are, thus, the most likely stable configurations. We find small energy differences between them, suggesting their possible co-existence. It is also observed that the tetrahedral configuration decays to a split dumbbell configuration, whereas both the basal tetrahedral and the basal pseudocrowdion interstitials decay to the basal octahedral configuration. Using the nudged elastic band method (NEB), we determine a possible minimum energy path (MEP) for the diffusion of self-interstitial titanium atoms from an octahedral site to the nearest octahedral site. The energy barrier for this migration mechanism is shown to be about 0.20 eV.     

Reaction rate between 1D migrating self-interstitial atoms: an examination by kinetic Monte Carlo simulation

The rate equation approach is useful for semi-quantitatively simulating long-term processes of accumulation or recovery of lattice defects in crystalline materials upon irradiation or annealing. This approach has been developed and applied to a large number of systems, including 3D or 1D migrating self-interstitial atoms (SIAs) and 1D migrating SIA clusters. The dimensionality of the migration of mobile species significantly affects the forms of the reaction rate. For reactions related to 1D migrating SIAs and clusters, only their reactions with stationary traps have been considered. However, the reactions between 1D migrating SIAs (or clusters) cannot be ignored, especially for processes in metals, in which the most stable configuration of an SIA is the crowdion, under electron and ion irradiations at comparatively high dose rate. In the present study, we use the object kinetic Monte Carlo (KMC) method to find the approximate form of the reaction rate between 1D migrating SIAs. For this purpose, we examine the average time for one SIA to encounter another SIA, in systems where the spatial distribution of SIAs is kept homogeneous, as a function of the concentration of SIAs. The approximate form of the reaction rate between 1D migrating SIAs primarily and effectively reflects the 2D migration process. In addition, it is shown that, in the systems composed of all reactive SIAs under annealing, the absolute value of the reaction rate by KMC becomes slightly lower than the solution of the derived form after longer times, due to the spatial correlation among SIAs.     

Formation and diffusion of self-interstitial atoms in silicon crystals under hydrostatic pressure: Quantum-chemical simulation

A theoretical modeling of the formation of Frenkel pairs and the diffusion of a self-interstitial atom in silicon crystals at normal and high (hydrostatic) pressures has been performed using molecular dynamics, semiempirical quantum-chemical (NDDO-PM5, PM6), and ab initio (SIESTA) methods. It is shown that, in a silicon crystal, the most stable configuration of a self-interstitial atom in the neutral charge state (I ⁰) is the split configuration 〈110〉. The shifted tetrahedral configuration (T ₁) is stable in the singlet and triplet excited states, as well as in the charge state Z = +2. The split 〈110〉 interstitial configuration remains stable under hydrostatic pressure (P ≤ 80 kbar). The activation barriers for diffusion of self-interstitial atoms in silicon crystals are determined to be as follows: ΔE _a (Si)(〈110〉 → T ₁) = 0.59 eV, ΔE _a (Si)(T ₁ → T′₁) = 0.1 eV, and ΔE _a (Si)(T ₁ → 〈110〉) = 0.23 eV. The hydrostatic pressure (P ≤ 80 kbar) increases the activation barrier for diffusion of self-interstitial atoms in silicon crystals. The energies of the formation of a separate Frenkel pair, a self-interstitial atom, and a vacancy are determined. It is demonstrated that the hydrostatic pressure decreases the energy of the formation of Frenkel pairs.     

SIA energetic and structural morphology of α-iron

In this paper, the stability of various atomic configurations containing a self-interstitial atom (SIA) in a model representing α-iron is investigated. From the energy panorama maps of the SIA located in possible non-equivalent interstitial sites, six relatively stable self-interstitial sites are found, whose structures and formation energies have been described and calculated using the modified analytical embedded atom method and molecular dynamics. The simulation results indicate that the [110] dumbbell interstitial is the energetically most favorable configuration, which is in good agreement with the experimental and ab initio results, and the distances between two displaced atoms that compose the [100], [110] and [111] direction dumbbells have been computed to be 0.68a, 0.65a and 0.29a, respectively, not all being about 0.75a apart. The relaxed displacements up to the fifth-nearest-neighbor atoms around the SIA in O interstitial position are also calculated.     

Anisotropic Migration of Defects under Strain Effect in BCC Iron

The basic properties of defects(self-interstitial and vacancy) in BCC iron under uniaxial tensile strain are investigated with atomic simulation methods. The formation and migration energies of them show different dependences on the directions of uniaxial tensile strain in two different computation boxes. In box-1, the uniaxial tensile strain along the100direction influences the formation and migration energies of the110dumbbell but slightly affects the migration energy of a single vacancy. In box-2, the uniaxial tensile strain along the 111 direction influences the formation and migration energies of both vacancy and interstitials. Especially, a 110 dumbbell has a lower migration energy when its migration direction is the same or close to the strain direction, while along these directions, a vacancy has a higher migration energy. All these results indicate that the uniaxial tensile strain can result in the anisotropic formation and migration energies of simple defects in materials.     

Adsorption an Einkristall-Oberflächen von Cu/Ni-legierungen. I

The adsorption of O₂ and CO on the (110) face of a Cu/Ni alloy (55 at% Cu) has been studied by means of low energy electron diffraction (LEED), Auger electron spectroscopy, work function measurements, and flash desorption. A comparison with the behavior of Cu(110) and Ni(110) is made. It is shown that the height of an Auger peak is proportional to the surface concentration of the corresponding species and that the surface composition of the alloy is identical with the composition of the bulk. Adsorption of oxygen leads to the formation of an ordered 2 × 1 structure, as is the case for Cu(110) and Ni(110). Further exposure causes disordered adsorption in contrast to the pure components where c6 × 2 respectively 3 × 1 structures are formed. Oxygen increases the work function of Cu and Cu/Ni by about 0.25 eV whereas for Ni the increase is > 1 eV. CO is not irreversibly adsorbed on Cu at 25°C, but forms a stable 1 × 1 structure on Ni(110). With the alloy two ordered phases (2 × 1 and 2 × 2) are observed. The flash desorption spectrum shows three maxima which are similar to the binding states of CO on Ni(110) and Ni(100). The results are discussed in view of the electronic structure of Cu/Ni alloys and the parameters influencing the configuration of adsorbed particles.     

First principles calculations of the adsorption of acetylene on the Si(0 0 1) surface at low and full coverage

The adsorption of acetylene on the Si(0 0 1)-c(2 × 4) surface at low and full coverage is studied by first principles density functional calculations using the generalized gradient approximation. For a single acetylene molecule, the most stable configuration corresponds to the di-σ site, on-top of a silicon dimer. This configuration is 0.36 eV more stable than the end-bridge site between two adjacent Si dimers. However, if there are two acetylene molecules, the paired end bridge configuration becomes the most stable. We have also studied the kinetics of the adsorption of a single acetylene molecule. Our calculations show that the reaction is barrier-free for adsorption in the di-σ configuration, while there is an energy barrier of 0.19 eV for adsorption in the end-bridge site. At monolayer coverage, the most stable configuration corresponds to acetylene molecules in the pair-end bridge configuration, in agreement with previous calculations. We have found a noticeable coverage dependence only for the end-bridge site, but not for the di-σ. Our results show that to have an accurate picture of the adsorption of acetylene on the Si(0 0 1) surface, a large unit cell is needed.     

One-dimensional atomic transport by clusters of self-interstitial atoms in iron and copper

Atomic-scale computer simulation has been used to study the thermally activated atomic transport of self-interstitial atoms (SIAs) in the form of planar clusters in pure Cu and f-Fe. There is strong evidence that such clusters are commonly formed in metals during irradiation with high-energy particles and play an important role in accumulation and spatial distribution of surviving defects. An extensive study of the mobility of SIA clusters containing two to 331 interstitials has been carried out using the molecular dynamics simulation technique for the temperature range from 180 to 1200 K. The results obtained show that clusters larger than three to four SIAs are one-dimensionally mobile in both Cu and Fe. Large clusters of more than 100 SIAs in Cu and 300 SIAs in Fe have significantly reduced mobility. The problem of describing one-dimensional (1D) motion in three-dimensional space is discussed. An attempt is made to describe the mobility of SIA clusters within the approximation of 1D diffusion. For clusters in both metals the effective migration energy of 1D diffusion as estimated via the jump frequency of the cluster centre of mass is found to be independent of the number of SIAs in the clusters, although the cluster jump frequency decreases with increasing cluster size. Mechanisms of 1D mobility of interstitial clusters are discussed.     

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

A pathway to open the band gap of graphene by p-n codoping is presented according to the first principles study. Two models are used: Lithium adsorbed on Boron-doped graphene (BG) and Boron-Nitrogen (B/N) codoping into graphene. The stability of Lithium adsorbed on BG is firstly analyzed, showing that the hollow site is the most stable configuration, and there is no energy barrier from some metastable configurations to a stable one. After the p-n codoping, the electronic structures of graphene are modulated to open a band gap with width from 0.0 eV to 0.49 eV, depending on the codoping configurations. The intrinsic physical mechanism responsible for the gap opening is the combination of the Boron atom acting as hole doping and Nitrogen (Lithium) as electron doping.     

Oxygen adsorption on the LaB6(100), (110) and (111) surfaces

Oxygen adsorption on the LaB₆(100), (110) and (111) clean surfaces has been studied by means of UPS, XPS and LEED. The results on oxygen adsorption will be discussed on the basis of the structurs and the electronic states on the LaB₆(100), (110) and (111) clean surfaces. The surface states on LaB₆(110) disappear at the oxygen exposure of 0.4 L where a c(2 × 2) LEED pattern disappears and a (1 × 1) LEED pattern appears. The work function on LaB₆(110) is increased to ～3.8 eV by an oxygen exposure of ～2 L. The surface states on LaB₆(111) disappear at an oxygen exposure of ～2 L where the work function has a maximum value of ～4.4 eV. Oxygen is adsorbed on the surface boron atoms of LaB₆(111) until an exposure of ～2 L. Above this exposure, oxygen is adsorbed on another site to lower the work function from ～4.4 to ～3.8 eV until an oxygen exposure of ～100L. The initial sticking coefficient on LaB₆(110) has the highest value of ～1 among the (100), (110) and (111) surfaces. The (100) surface is most stable to oxygen among these surfaces. It is suggested that the dangling bonds of boron atoms play an important role in oxygen adsorption on the LaB₆ surfaces.     

硼/氮原子共注入金刚石的原子级研究

利用Tersoff势和分子动力学方法研究了室温下500 eV的能量粒子硼(4个)和氮(8个)共注入金刚石晶体中晶体结构的变化特征和缺陷分布特征.结果表明：粒子注入金刚石后产生的空位比间隙原子更靠近晶体的近表层分布；间隙原子主要以四面体间隙(T形)和哑铃状分裂间隙的形式存在于晶体中，T形间隙结构更容易存在，并且大部分间隙原子富集在空位的周围；注入金刚石中的硼原子和氮原子有78%左右处于替代位置,硼、氮原子之间的键长比完整金刚石结构的键长短13%，硼氮原子成键有利于减少金刚石晶格的畸变程度.     

The recovery of Ag and the formation of mixed dumbells in Ag alloyed with Au after thermal-neutron irradiation

The recovery spectrum of Ag and AgAu between 10K and 400K is discussed. In AgAu the recovery observed near 110K and in stage III indicates that not all the Ag interstitials form a mixed dumbbell configuration with Au. The defect concentration dependence of the 110K substage confirms that this substage is due to detrapping of self-interstitials from single Au impurities.     

Energetics of native point defects in cubic silicon carbide

In this work we present a detailed investigation of native point defects energetics in cubic SiC, using state-of-the-art first principles computational method. We find that, the carbon vacancy is the dominant defect in p-type SiC, regardless the growth conditions. Silicon and carbon antisites are the most common defects in n-type material in Si-rich and C-rich conditions respectively. Interstitial defects and silicon vacancy are less favorite from the energetic point of view. The silicon vacancy tends to transform into a carbon vacancy-antisite complex and the carbon interstitial atom prefers to pair to a carbon antisite. The dumbbell structure is the lowest-energy configuration for the isolated carbon interstitial defect, and the tetrahedral interstitial silicon is a stable structure in p-type and intrinsic conditions, while in n-type material the dumbbell configuration is the stable one. Our results suggest that, in samples grown in Si-rich stoichiometric conditions, native defects are a source of n-doping and of compositional unbalance of nominally intrinsic SiC, in accord with experimental evidence.Received: 9 January 2004, Published online: 28 May 2004PACS: 61.72.Ji Point defects (vacancies, interstitials, color centers, etc.) and defect clusters - 68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc. - 74.62.Dh Effects of crystal defects, doping and substitution     

Diffusion anisotropy and void development under cascade irradiation

Cascade irradiation of metals gives rise to swelling as a result of the creation of voids and the evolution of the void ensemble. Under suitable circumstances, the originally disordered void distribution transforms into to a void lattice. As demonstrated previously, the understanding of the evolution and the unique features of the void ensemble requires a difference in the anisotropy of the diffusion (DAD) of vacancies and self-interstitial atoms (SIAs), which is achieved by one-dimensional diffusion of the SIAs. On the other hand, void swelling has been successfully modeled in terms of three-dimensional diffusion of both vacancies and SIAs. In the present paper it is shown that these seemingly contradicting interpretations and all related observations can be quantitatively reconciled by a small DAD created by only ～1% of SIAs diffusing one-dimensionally. It is also demonstrated that at the initial stage of void-lattice formation, ordering occurs mainly on close-packed crystal planes, which is in contrast to the naïve expectation that one-dimensional diffusion of SIAs should result in a void ordering along close-packed directions. Finally it is found that, in the case of a small DAD, voids annihilate via stochastic shrinkage much faster than by coalescence. This falsifies the argument in the literature that one-dimensional diffusion of SIAs would necessarily lead to the coalescence of voids and destabilization of the void lattice.     

Atomic adsorption of oxygen on Cu(111) and Cu(110)

We have studied angle-resolved inverse photoemission ( = 9.7 eV) after room temperature adsorption of oxygen on Cu(111) and Cu(110). On Cu(111) exposure to 500 L induces a band (3.0 eV aboveE _F at) which shows clear dispersion (1.0 eV) to higher energies for off normal incidence. Since no LEED superstructure is seen for that system, our results present strong evidence for the presence of short-range surface order. Two adsorbate bands are identified (2.8 eV and 6.3 eV at) on Cu(110)p(2×1)-O. Our results are in good agreement with a long-bridge adsorption site.     

Energetics of Carbon deposition on Fe(100) and Fe(110) surfaces and subsurfaces

Spin-polarized density functional theory calculations have been performed to investigate carbon deposition and carbide formation on Fe(100) and Fe(110) at different carbon coverage. On Fe(100) with increasing carbon coverage, the most stable carbon adsorption configuration changes from surface carbon adsorption to surface carbon diffusion into subsurface, and surface carbon clustering is not favored thermodynamically. However, surface carbon clustering is more favored kinetically than carbon diffusion; and carbon diffusion into subsurface and surface carbon clustering become competitive. On Fe(110) with increasing surface carbon coverage, the most stable adsorption configuration changes from surface carbon adsorption to surface carbon diffusion into subsurface, and this process is favored both kinetically and thermodynamically, and surface carbon clustering is neither favored nor competitive. Surface carbon deposition might form on Fe(100), while carbide formation might be found on Fe(110).     

Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures

We report proton radiation enhanced self-diffusion (RESD) studies on Si-isotope heterostructures. Self-diffusion experiments under irradiation were performed at temperatures between 780 degrees C and 872 degrees C for various times and proton fluxes. Detailed modeling of RESD provides direct evidence that vacancies at high temperatures diffuse with a migration enthalpy of H(m)(V)=(1.8+/-0.5) eV significantly more slowly than expected from their diffusion at low temperatures, which is described by H(m)(V)<0.5 eV. We conclude that this diffusion behavior is a consequence of the microscopic configuration of the vacancy whose entropy and enthalpy of migration increase with increasing temperature.     

Submonolayer adsorption of Na onto the Cu(110) surface: Structure and vibrational properties

The submonolayer adsorption of Na onto the Cu(110) surface is studied. At small Na coverages (Θ = 0.16–0.25 ML), the substrate surface subjected to missing-row reconstruction (1 × 2) is shown to be most stable dynamically. When the coverage increases to Θ = 0.5 ML, the unreconstructed substrate surface with a c(2 × 2) sodium adlayer becomes dynamically stable. For an analysis, we used data on the equilibrium atomic configuration, the adsorption energy, the phonon spectra, the local density of phonon states, and the polarization of localized vibrational modes. All calculations were performed using the interatomic potentials obtained in terms of the embedded-atom method. The calculated frequencies of localized vibrational modes agree well with the existing experimental data.