Electrodynamics of the band-edge in a direct gap semiconductor

A set of equations is derived which can describe resonant interaction of a two band semiconductor with intense radiation. The theory comprises as limiting cases: (1) Bloch equation treatment of localized two level atoms; (2) Lindhard's dielectric theory of free electrons; (3) a linear band to band transition theory equivalent to that of Elliott.     

Comodulation masking release in consonant recognition

Comodulation masking release (CMR) refers to an improvement in the detection threshold of a signal masked by noise with coherent amplitude fluctuation across frequency, as compared to noise without the envelope coherence. The present study tested whether such an advantage for signal detection would facilitate the identification of speech phonemes. Consonant identification of bandpass speech was measured under the following three masker conditions: (1) a single band of noise in the speech band ("on-frequency" masker); (2) two bands of noise, one in the on-frequency band and the other in the "flanking band," with coherence of temporal envelope fluctuation between the two bands (comodulation); and (3) two bands of noise (on-frequency band and flanking band), without the coherence of the envelopes (noncomodulation). A pilot experiment with a small number of consonant tokens was followed by the main experiment with 12 consonants and the following masking conditions: three frequency locations of the flanking band and two masker levels. Results showed that in all conditions, the comodulation condition provided higher identification scores than the noncomodulation condition, and the difference in score was 3.5% on average. No significant difference was observed between the on-frequency only condition and the comodulation condition, i.e., an "unmasking" effect by the addition of a comodulated flaking band was not observed. The positive effect of CMR on consonant recognition found in the present study endorses a "cued-listening" theory, rather than an envelope correlation theory, as a basis of CMR in a suprathreshold task.     

Enlargement of the band gap in the metal-insulator-metal heterowaveguide

We present a new metal-insulator-metal (MIM) heterowaveguide to enlarge the band gap, which is formed by alternately stacking two kinds of metals, modulating the MIM waveguide slit, and inserting different dielectric materials with the effective refractive index periodically modulated. Based on this structure, we adopt two different methods to enlarge the band gap: changing the thickness of the unit layer and combining two MIM structures. Both of them widen the band gap when surface plasmon polaritons propagate through the structure. This metal heterostructure is expected to have applications in surface plasmon polaritons (SPPs) based optical devices, such as filters, waveguides, especially for broad band gap elements.     

一种多频局域共振型声子晶体板的低频带隙与减振特性

设计了一种多频局域共振型声子晶体板结构, 该结构由一薄板上附加周期性排列的多个双悬臂梁式子结构而构成. 由于多个双悬臂梁式子结构的低频振动与薄板振动的相互耦合作用, 这种局域共振型板结构可产生多个低频弯曲波带隙(禁带); 带隙频率范围内的板弯曲波会被禁止传播, 利用带隙可以实现对薄板的多个目标频率处低频减振. 本文针对这种局域共振型板结构进行了简化, 并基于平面波展开法建立了其弯曲波带隙计算理论模型; 基于该模型, 结合具体算例进行了带隙特性理论分析. 设计、制备了一种存在两个低频弯曲波带隙的局域共振型板结构样件, 通过激光扫描测振仪测试证实该结构存在两个低频带隙, 在带隙频率范围的板弯曲振动被显著衰减.     

Convergence of conduction bands as a means of enhancing thermoelectric performance of n-type Mg2Si(1-x)Sn(x) solid solutions

Mg(2)Si and Mg(2)Sn are indirect band gap semiconductors with two low-lying conduction bands (the lower mass and higher mass bands) that have their respective band edges reversed in the two compounds. Consequently, for some composition x, Mg(2)Si(1-x)Sn(x) solid solutions must display a convergence in energy of the two conduction bands. Since Mg(2)Si(1-x)Sn(x) solid solutions are among the most prospective of the novel thermoelectric materials, we aim on exploring the influence of such a band convergence (valley degeneracy) on the Seebeck coefficient and thermoelectric properties in a series of Mg(2)Si(1-x)Sn(x) solid solutions uniformly doped with Sb. Transport measurements carried out from 4 to 800 K reveal a progressively increasing Seebeck coefficient that peaks at x=0.7. At this concentration the thermoelectric figure of merit ZT reaches exceptionally large values of 1.3 near 700 K. Our first principles calculations confirm that at the Sn content x≈0.7 the two conduction bands coincide in energy. We explain the high Seebeck coefficient and ZT values as originating from an enhanced density-of-states effective mass brought about by the increased valley degeneracy as the two conduction bands cross over. We corroborate the increase in the density-of-states effective mass by measurements of the low temperature specific heat. The research suggests that striving to achieve band degeneracy by means of compositional variations is an effective strategy for enhancing the thermoelectric properties of these materials.     

Strain drived band aligment transition of the ferromagnetic VS_2/C_3N van der Waals heterostructure

Exploring two-dimensional(2 D) magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_2/C_3 N van der Waals(vdW) heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS_2 and C_3 N monolayers,our results indicate that a direct band gap with type-Ⅱ band alignment and p-doping characters are realized in the spin-up channel of the VS_2/C_3 N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱ and type-Ⅲ band alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.     

Comodulation masking release for various monaural and binaural combinations of the signal, on-frequency, and flanking bands

The threshold for a signal masked by a narrow band of noise centered at the signal frequency (the on-frequency band) may be reduced by adding to the masker a second band of noise (the flanking band) whose envelope is correlated with that of the first band. This effect is called comodulation masking release (CMR). These experiments examine two questions. (1) How does the CMR vary with the number and ear of presentation of the flanking band(s)? (2) Is it possible to obtain a CMR when a binaural masking level difference (BMLD) is already present, and vice versa? Thresholds were measured for a 400-ms signal in a continuous 25-Hz-wide noise centered at signal frequencies (fs) of 250, 1000, and 4000 Hz. This masker was presented either alone or with one or more continuous flanking bands whose envelopes were either correlated or uncorrelated with that of the on-frequency band; their frequencies ranged from 0.5fs to 1.5fs. CMRs were measured for six conditions in which the signal, the on-frequency band, and the flanking band(s) were presented in various monaural and binaural combinations. When a single flanking band was used, the CMR was typically around 2-3 dB. The CMR increased to 5-6 dB if an additional flanking band was added. The effect of the additional band was similar whether it was in the same ear as the original band or in the opposite ear. At the lowest signal frequency, a large CMR was observed in addition to a BMLD and vice versa. At the highest signal frequency, the extra release from masking was small. The results are interpreted in terms of the cues producing the CMR and the BMLD.     

Cathodoluminescence properties of silicon nanocrystallites embedded in silicon oxide thin films

Cathodoluminescence (CL) spectra for the Si nanocrystallites embedded in a matrix of silicon oxide films are measured at room temperature. The CL spectra consist of two principal bands whose peak energies are in a near-infrared (NIR) region (<1.6 eV) and in a blue region (2.6 eV), respectively. The spectral feature of the NIR CL band is similar to the corresponding PL spectra. The strong correlation between the presence of Si nanocrystallites and the formation of the NIR CL band are found as well as the PL spectrum. The peak energy of the blue CL band is slightly lower than that of the luminescence band originating from oxygen vacancies (≡Si–Si≡) in SiO₂. Therefore, the blue CL band is considered to come from Si_n clusters with n3 in the oxide matrix. Under irradiation of electron beams, degradation of the intensity is observed for both the CL bands but the decay characteristics are different.     

电磁波在周期介质中的传播及二维光子晶体的光子带结构

光子晶体是光学与凝聚态物理交叉的新领域,也是近年来应用物理学的一个重要研究领域,它是一种由介电常数高的(低的)介质在另一种介电常数低的(高的)背景介质中周期排列所组成的人造多维周期结构材料,能够产生光子带隙。频率落在带隙内的光在晶体里沿任何方向都不能传播,因而具有能够抑制原子、分子的自发辐射等诱人的光电子学特性,在基础研究和实际应用上都有着巨大的潜力。本文在这一领域里进行了富有成效的研究,获得了很好的结果。主要有:(1)利用平面波展开方法来计算二维光子晶体的带隙结构。首先,我们设计正方晶胞的二维光子晶体模型。设x₃方向为介质柱的轴方向,二维周期结构在x₁-x₂平面上。晶胞的晶格常数为a,半径为r,介质柱和空气柱的介电常数分别为ε_a=17和ε_b=1,a>2r。设计的核心思想是通过降低光子晶体结构的对称性,消除光子能带在晶体的布里渊区高对称点上的本征简并。(2)对于二维光子晶体的电磁波理论及周期介质中的Bloch波解做了详细的推导,给出了光子晶体中禁带存在的理论依据。同时以正方格子晶格的二维光子晶体为例,验证了电介质在空气圆孔中的排列存在E偏振和H偏振的光子带隙重叠区,称为绝对光子带隙。对于二维的光子晶体,两种本征偏振模式的光子能带结构可以独立地调节,以实现两者的光子带隙的最优重叠, 从而大大提高了二维光子晶体的完全带隙宽度。     

Enhancement of phononic band gaps in ternary/binary structure

Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.     

Prediction of band gap reduction and magnetism in (Cu,S)-codoped ZnO

By employing a density functional theory plane-wave pseudopotential method, we investigated band gap reduction and magnetism as well as electronic structures of (Cu, S)-codoped ZnO. Our calculations indicated that Cu and/or S-doped ZnO can reduce the band gap of ZnO. The (Cu, S)-codoped ZnO has a large band gap reduction of 0.37 eV, two times larger than that in Cu-doped ZnO. S atom has no contribution for the total magnetic moment of (Cu, S)-codoped ZnO, whereas it plays a central role in spin-polarizing of both Cu and S dopants due to strong coupling between Cu 3d and S 3p states. This would offer a new strategy for designing narrow band gap devices with magnetism.     

基于像素法用模拟退火-遗传算法搜索一维宽带隙光子晶体

将一维光子晶体用像素填充法进行二进制编码,把模拟退火、遗传算法、模拟退火-遗传混合算法与传输矩阵法结合,搜索、计算了一维光子晶体结构和能带,找到了全方位相对禁带宽度高达43.53%的四层结构和43.76%的两层结构,并给出了一维四层结构光子晶体的能带图及其4个原胞的反射率和透射率的频谱图;发现一维两层结构光子晶体的全方位禁带宽度对每层厚度的变化不敏感,但随着两种介质折射率差的增加而增大.     

The nu(2), nu(4) + nu(5), nu(6) + nu(9), and nu(8) Band System in 1,1,1-Trifluoroethane

High-resolution FTIR spectra of 1,1,1-trifluoroethane (HFC-143a) have been recorded in the region from 1370 to 1470 cm(-1) with an unapodized resolution of 0.0016 cm(-1) at room temperature and of 0.004 cm(-1) at 183 and 100 K. The two main infrared active bands of A(1) symmetry have been shown to be nu(2) at 1407.5 cm(-1) and nu(4) + nu(5) at 1440.5 cm(-1). With the aid of Raman spectra, the two infrared inactive bands of E symmetry in this spectra region have been shown to be nu(8) at 1457.5 cm(-1) and nu(6) + nu(9) at 1446.2 cm(-1). The nu(2) band was analyzed as an isolated band, whereas the nu(4) + nu(5) band was analyzed as part of the triad nu(4) + nu(5), nu(6) + nu(9), and nu(8). Copyright 2000 Academic Press.     

GD a-Si:H主光致发光带的时间分辨研究

本文研究了低温淀积(例如T:<150℃)的GD a-Si:H在77K的时间分辨光致发光谱和荧光衰退。光致发光谱显示非对称形,荧光衰退显示出最初的快衰退,较长时间后为慢衰退。在快衰退范围内可用两个时间常数逐点分析时间分辨光谱,把主发光带分解为两个近似高斯形的发光带,对于Ts=127℃的薄膜,两发光带峰值位置在t=0时分别为1.73和1.58eV。快衰退两带的时间常数分别为10和23ns。文中还初步讨论了这两个发光带的起因。     

Photonic microwave multi-band frequency conversion based on a DP-QPSK modulator for satellite communication

We propose and demonstrate a simple, flexible and stably operated multi-band frequency conversion approach based on a dual-polarization quadrature phase shift keying modulator (DP-QPSK). The modulator incorporating two dual parallel Mach–Zehnder modulators (DPMZMs) which perform as OFC generator and +1st carrier suppressed single sideband generator, respectively, to achieve the purpose of frequency conversion. The theoretical analysis indicates that by properly adjusting six DC bias points in the integrated modulator and two modulation indices, a frequency of received RF signal can be directly converted into different frequencies that cover different bands simultaneously. The simulation results verified the possibility. For example, the received C band frequency of 3.8 GHz can be converted into X, Ku, K and Ka bands. An X band frequency of 9.6 GHz can be down-converted to C band and up-converted to Ku, K, Ka band. In addition, the simulation also focuses on how the adjustable parameters (such as DC bias points and modulation index) influence the conversion results. It demonstrates stable conversion efficiency against the DC drafting.     

Thermal properties of one-dimensional piezoelectric phononic crystal

By using the transfer matrix method, we theoretically studied the propagation of a longitudinal acoustic wave in a one-dimensional phononic crystal (PnC) that contains a piezoelectric material as a defect layer. A pass band can be generated and controlled in the middle of the band gap. The pass band position is tuned by applying an external electric field. The position of the pass band inside the band gap is tuned by the changing of temperature. We introduce a comparison between temperature effects on two piezoelectric materials, PZT-5H and 0.7 PMN-0.3PT inside a PnC structure. Moreover, the pass band is shifted towards high or low frequencies by temperature decrement or increment, respectively. The simulated results provide a valuable guidance for PnC applications such as acoustic switch and temperature sensor.     

Frequency average loss factors of plates and shells

This paper describes a thorough investigation of the measurement of frequency band average loss factors of structural components for use in the statistical energy analysis (SEA) method of computation of vibration levels. The “traditional” method of measurement is to excite the structure by a random force having a flat spectral density in the frequency band of interest. The force is then cut off and the decay of the modes excited in the band is noted. The average loss factor is deduced from the decay curve. The alternative energy method is the subject of this study. In this test the power input from the band limited random force is measured and the spatial average vibration level of the structure is estimated from several surface accelerometers. It is shown that when the modes in the band have similar loss factors (as is usually the case) the energy method gives a result which is very close to that obtained from the decay method. These in turn are close to the arithmetic average of the loss factors of the individual modes in the band. It is shown that only when the band contains one or two very lightly damped modes amongst several more heavily damped modes is there a difference between the two methods. In this case it is better to use the energy result in the SEA calculations.     

Effects of various defects on the electronic properties of single-walled carbon nanotubes: A first principle study

The geometries,formationenergies and electronic band structures of （8, 0） and （14, 0） singlewailed carbon nanotubes （SWCNTs） with various defects, inehlding vaeaney, Stone-Wales defect, and octagon pentagon pair defect, have been investigated within the framework of the density- huictional theory （DFT）, and the influence of the concentration within the same style of deflect on the physical and chenfical properties of SWCNTs is also studied. The results suggest that the existeilcc of vacancy and octagon-pentagon pair deflect both reduce the band gap, whereas the SW- defect induces a band gap opening in CNTs. More int, erestingly, the band gaps of （8, 0） and （14, 0） SWCNTs eonfigurations with two octagon pentagon pair defect presents 0.517 eV and 0.163/eV, which arc a little smaller than the perfectt CNTs. Furthermore, with the concentration of defects increasing, there is a decreasing of band ga.p making the two types of SWCNTs change from a semiconductor to a metallic conductor.     

Magnetic and infrared study of CO chemisorption on silica supported nickel-copper alloys

CO adsorption at room temperature on Ni-Cu alloys supported on SiO₂ is studied by two complementary techniques, infra-red spectroscopy and magnetic methods (saturation magnetization). The bond number between CO and the metallic surface calculated from magnetic data decreases from 1.8 to 1 as the Cu content increases. Two bands attributed to CO bonded to Ni are observed (the A band in the 2000–2050 cm^?1 region, and the B band in the 1950–1900 cm^?1 region). A small band assigned to CO bonded to Cu is also detected. As Cu content increases, the intensity of the B band decreases, and a noticeable and continuous frequency shift of the three bands is observed. Experimental results are fully accounted for assuming that: (i) two adsorbed species of CO on Ni, a monodentate and a bridged species (with small amounts of other multicentered species) are formed, as suggested by Eischens and Pliskin; (ii) dilution of Ni by Cu decreases the relative abundance of the bridged (and multicentered) species for some geometric reasons previously invoked by Soma-Noto and Sachtler; (iii) surface complexes are formed between CO and Ni; however Ni remains in its metallic state. The surface complex is sensitive to the electronic environment of the metallic atom, with a frequency shift of the three infra-red bands upon alloying as a consequence.     

Edge-modified zigzag-shaped graphene nanoribbons: Structure and electronic properties

Control of the band gap of graphene nanoribbons is an important problem for the fabrication of effective radiation detectors and transducers operating in different frequency ranges. The periodic edge-modified zigzag-shaped graphene nanoribbon (GNR) provides two additional parameters for controlling the band gap of these structures, i.e., two GNR arms. The dependence of the band gap E _g on these parameters is investigated using the π-electron tight-binding method. For the considered nanoribbons, oscillations of the band gap E _g as a function of the nanoribbon width are observed not only in the case of armchair-edge graphene nanoribbons (as for conventional graphene nanoribbons) but also for zigzag GNR edges. It is shown that the change in the band gap E _g due to the variation in the length of one GNR arm is several times smaller than that due to the variation in the nanoribbon width, which provides the possibility for a smooth tuning of the band gap in the energy spectrum of the considered graphene nanoribbons.